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91. 发明申请

US20110209975A1 KEYPAD ASSEMBLY 有权
标题翻译：键盘装配
公开(公告)号：US20110209975A1
公开(公告)日：2011-09-01
申请号：US12713884
申请日：2010-02-26
申请人： Chao Chen , Chen Xu
发明人： Chao Chen , Chen Xu
IPC分类号： H01H13/76
CPC分类号： H01H13/86 , H01H2209/01 , H01H2219/062 , H01H2223/002 , H01H2229/046 , H01H2233/04
摘要： A keypad assembly is described herein in which the keypad assembly includes a substrate and a plurality of domes positioned on the substrate and configured to translate operator action into a corresponding input for a machine. The keypad assembly also includes a dome overlay positioned over the domes and the substrate in which the dome overlay can create a sealed environment for the substrate and the domes. A light guide that directs light in the keypad assembly and an interlocking component coupled to the light guide can also be part of the keypad assembly. In one arrangement, the interlocking component can selectively compress the dome overlay to assist in the creation of the sealed environment. In another arrangement, the interlocking component can compress the dome overlay by bending the dome overlay at an edge of the substrate.
摘要翻译：本文描述了键盘组件，其中键盘组件包括基板和位于基板上的多个圆顶，并且被配置为将操作者动作转换成机器的相应输入。键盘组件还包括位于圆顶和基底之间的圆顶覆盖物，其中圆顶覆盖物可以为基底和圆顶形成密封环境。引导键盘组件中的光和耦合到光导的互锁部件的光导也可以是键盘组件的一部分。在一种布置中，互锁部件可以选择性地压缩圆顶盖，以有助于创建密封环境。在另一种布置中，互锁部件可以通过在基板的边缘处弯曲圆顶覆盖物来压缩圆顶覆盖物。

92. 发明申请

US20110107569A1 Large-Scale Lateral Nanowire Arrays Nanogenerators 有权
标题翻译：大型横向纳米线阵列纳米发生器
公开(公告)号：US20110107569A1
公开(公告)日：2011-05-12
申请号：US12943499
申请日：2010-11-10
申请人： Zhong L. Wang , Chen Xu , Yong Qin , Guang Zhu , Rusen Yang , Youfan Hu , Yan Zhang
发明人： Zhong L. Wang , Chen Xu , Yong Qin , Guang Zhu , Rusen Yang , Youfan Hu , Yan Zhang
IPC分类号： H02N2/18
CPC分类号： H01L41/316 , H02N2/18
摘要： In a method of making a generating device, a plurality of spaced apart elongated seed members are deposited onto a surface of a flexible non-conductive substrate. An elongated conductive layer is applied to a top surface and a first side of each seed member, thereby leaving an exposed second side opposite the first side. A plurality of elongated piezoelectric nanostructures is grown laterally from the second side of each seed layer. A second conductive material is deposited onto the substrate adjacent each elongated first conductive layer so as to be coupled the distal end of each of the plurality of elongated piezoelectric nanostructures. The second conductive material is selected so as to form a Schottky barrier between the second conductive material and the distal end of each of the plurality of elongated piezoelectric nanostructures and so as to form an electrical contact with the first conductive layer.
摘要翻译：在制造发生装置的方法中，多个间隔开的细长种子构件沉积在柔性非导电基底的表面上。将细长的导电层施加到每个种子构件的顶表面和第一侧，从而留下与第一侧相对的暴露的第二侧。多个细长的压电纳米结构从每个种子层的第二侧横向生长。第二导电材料沉积在每个细长的第一导电层上的衬底上，以便耦合到多个细长压电纳米结构中的每一个的远端。选择第二导电材料以在第二导电材料和多个细长压电纳米结构中的每一个的远端之间形成肖特基势垒，并且与第一导电层形成电接触。

93. 发明授权

US07924330B2 Methods and apparatuses for double sided dark reference pixel row-wise dark level non-uniformity compensation in image signals 有权
标题翻译：图像信号中双面暗参考像素行方向暗电平不均匀补偿的方法和装置
公开(公告)号：US07924330B2
公开(公告)日：2011-04-12
申请号：US12004035
申请日：2007-12-20
申请人： Chen Xu , Yaowu Mo , Mei Yan
发明人： Chen Xu , Yaowu Mo , Mei Yan
IPC分类号： H04N9/64
CPC分类号： H04N5/374 , H04N5/361 , H04N9/045
摘要： Methods and apparatuses for row-wise dark level non-uniformity compensation of imaging sensor pixel signals. A column dependent dark reference value is determined as one of a linear and parabolic function of signal values from two areas of dark reference pixels and a column location and then used for dark level non-uniformity compensation of signal values from imaging pixels.
摘要翻译：成像传感器像素信号的逐行暗电平不均匀补偿的方法和装置。列依赖暗参考值被确定为来自暗参考像素和列位置的两个区域的信号值的线性和抛物线函数之一，然后用于来自成像像素的信号值的暗电平非均匀性补偿。

94. 发明申请

US20100243866A1 IMAGING DEVICES AND METHODS FOR CHARGE TRANSFER 有权
标题翻译：成像装置和充电转移方法
公开(公告)号：US20100243866A1
公开(公告)日：2010-09-30
申请号：US12412120
申请日：2009-03-26
申请人： Yaowu Mo , Chen Xu
发明人： Yaowu Mo , Chen Xu
IPC分类号： H03F3/08
CPC分类号： H03F3/08
摘要： A pixel circuit having improved charge transfer including an amplifier having an input node electrically connected to a charge storage node of the pixel circuit, and a negative feedback control loop having a capacitance element electrically connected between the input node and an output node of said amplifier.
摘要翻译：一种具有改进的电荷转移的像素电路，包括具有电连接到像素电路的电荷存储节点的输入节点的放大器，以及具有电连接在所述放大器的输入节点和输出节点之间的电容元件的负反馈控制环路。

95. 发明申请

US20100163933A1 ANTIBLOOMING IMAGING APPARATUS, SYSTEMS, AND METHODS 有权
标题翻译：防止成像设备，系统和方法
公开(公告)号：US20100163933A1
公开(公告)日：2010-07-01
申请号：US12719597
申请日：2010-03-08
申请人： Chen Xu , Gennadiy Agranov , Igor Karasev
发明人： Chen Xu , Gennadiy Agranov , Igor Karasev
IPC分类号： H01L27/146 , H01L31/14 , H01L31/02
CPC分类号： H04N5/378 , H04N5/3594 , H04N5/3745
摘要： Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier arrangement is configured to block the flow of charge carriers generated outside a photosensitive region. In various embodiments, a potential well-potential barrier arrangement is formed to direct charge carriers away from the photosensitive region during an integration time.
摘要翻译：描述了装置，系统和方法以帮助减少有源像素传感器中的暗电流。在各种实施例中，势垒布置被配置为阻挡在感光区域外部产生的电荷载流子的流动。在各种实施例中，形成势阱势垒布置，以在积分时间期间使电荷载流子远离光敏区域。

96. 发明授权

US07619671B2 Method, apparatus and system for charge injection suppression in active pixel sensors 有权
标题翻译：有源像素传感器中电荷注入抑制的方法，装置和系统
公开(公告)号：US07619671B2
公开(公告)日：2009-11-17
申请号：US11488110
申请日：2006-07-18
申请人： Xiangli Li , Chen Xu , Peter Parker Altice , John Ladd
发明人： Xiangli Li , Chen Xu , Peter Parker Altice , John Ladd
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/374 , H04N5/355 , H04N5/3575 , H04N5/3594 , H04N5/3597
摘要： A method and apparatus are provided for operation of an image sensor during signal readout. During a reset operation the gate of a reset transistor coupled to the storage node receives a voltage greater than a threshold voltage to produce a reset of the storage node. During a period where photogenerated charges stored at the storage node are read out the gate of the reset transistor receives a voltage VRST—LOW greater than ground, but less than a maximum voltage which can be stored at the storage node.
摘要翻译：提供了一种在信号读出期间操作图像传感器的方法和装置。在复位操作期间，耦合到存储节点的复位晶体管的栅极接收大于阈值电压的电压，以产生存储节点的复位。在存储节点存储的光生电荷被读出的期间，复位晶体管的栅极接收比地大的电压VRST-LOW，但小于可存储在存储节点处的最大电压。

97. 发明申请

US20090273691A1 METHOD AND APPARATUS PROVIDING ANALOG ROW NOISE CORRECTION AND HOT PIXEL FILTERING 有权
标题翻译：提供模拟噪声校正和热像素滤波的方法和装置
公开(公告)号：US20090273691A1
公开(公告)日：2009-11-05
申请号：US12114354
申请日：2008-05-02
申请人： Yaowu Mo , Chen Xu
发明人： Yaowu Mo , Chen Xu
IPC分类号： H04N9/64 , H04N5/335
CPC分类号： H04N5/37457 , H04N5/3559 , H04N5/361 , H04N5/367
摘要： An imaging device and method for operating the device. The imaging device comprises a pixel array that comprises a plurality of imaging pixels and dark reference pixels arranged in columns and rows. The dark reference pixels produce a noise signal that is subtracted from a pixel signal produced by the imaging pixels to correct row noise. In addition, the imaging device may comprise a hot pixel filtering circuit that blocks the output from hot pixels.
摘要翻译：一种用于操作该装置的成像装置和方法。成像装置包括像素阵列，其包括以列和行排列的多个成像像素和暗参考像素。暗参考像素产生从由成像像素产生的像素信号中减去的噪声信号，以校正行噪声。此外，成像装置可以包括阻止热像素的输出的热像素滤波电路。

98. 发明申请

US20090045320A1 Method, apparatus and system for a low power imager device 审中-公开
标题翻译：低功率成像装置的方法，装置和系统
公开(公告)号：US20090045320A1
公开(公告)日：2009-02-19
申请号：US11889694
申请日：2007-08-15
申请人： Chen Xu
发明人： Chen Xu
IPC分类号： H01L27/00
CPC分类号： H04N5/3698 , H04N5/232 , H04N5/23241
摘要： A method, apparatus and system providing an imaging device in which a bias current supplied to one or more imaging device circuits is adjusted in accordance with a frequency of a pixel clock signal.
摘要翻译：一种提供成像装置的方法，装置和系统，其中根据像素时钟信号的频率调整提供给一个或多个成像装置电路的偏置电流。

99. 发明申请

US20080278029A1 ELECTROLESS PLATING PRODUCTION OF NICKEL AND COLBALT STRUCTURES 有权
标题翻译：镍和铁素体结构的电镀生产
公开(公告)号：US20080278029A1
公开(公告)日：2008-11-13
申请号：US11747555
申请日：2007-05-11
申请人： Flavio Pardo , Maria E. Simon , Brijesh Vyas , Chen Xu
发明人： Flavio Pardo , Maria E. Simon , Brijesh Vyas , Chen Xu
IPC分类号： H02N10/00 , C25D5/00 , H01L21/00
CPC分类号： C23C18/32 , C23C18/1605 , C23C18/165 , C23C18/1651 , C23C18/1689 , C23C18/34 , C23C18/36
摘要： A method comprising forming a structural element 115 on a surface 620 of a layer 510 via an electroless plating of nickel or cobalt 130 onto the surface, the layer being rigidly fixed to an underlying substrate 110. The method also comprises etching away a portion of the layer such that a part of the structural element is able to move with respect to the substrate.
摘要翻译：一种方法包括在层510的表面620上经由镍或钴130的无电镀层在表面上形成结构元件115，所述层刚性地固定到下面的基底110上。该方法还包括蚀刻掉部分使得结构元件的一部分能够相对于基板移动。

100. 发明申请

US20080261071A1 Preserving Solderability and Inhibiting Whisker Growth in Tin Surfaces of Electronic Components 审中-公开
标题翻译：保持电子元件锡表面的可焊性和抑制晶须生长
公开(公告)号：US20080261071A1
公开(公告)日：2008-10-23
申请号：US10597374
申请日：2005-01-21
申请人： Chen Xu , Yun Zhang , Chonglun Fan , Oscar Khaselev , Joseph A. Abys , Eric Walch , Marlies Kleinfeld , Hans Ullrich Eckert
发明人： Chen Xu , Yun Zhang , Chonglun Fan , Oscar Khaselev , Joseph A. Abys , Eric Walch , Marlies Kleinfeld , Hans Ullrich Eckert
IPC分类号： B32B15/01 , C25D5/12
CPC分类号： H01L23/49582 , C25D5/12 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2924/00014 , H01L2924/01327 , H01L2924/15747 , H01L2924/19041 , H01R4/02 , H01R13/03 , H05K3/3426 , H05K2201/10909 , Y02P70/613 , Y10T428/12722 , H01L2224/45099 , H01L2924/00
摘要： A method for reducing whisker formation and preserving solderability in tin coatings over metal features of electronic components. The tin coating has internal tensile stress and is between about 0.5 m and about 4.0 m in thickness. There is a nickel-based layer under the tin coating.
摘要翻译：一种减少电子部件的金属特征的方法，用于减少锡涂层中的晶须形成和保持锡涂层的可焊性。锡涂层具有内部拉伸应力，厚度在约0.5μm至约4.0μm之间。在锡涂层下面有一个镍基层。

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