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91. 发明申请

US20050227499A1 Oxide-like seasoning for dielectric low k films 有权
标题翻译：电介质低k薄膜的氧化物调味料
公开(公告)号：US20050227499A1
公开(公告)日：2005-10-13
申请号：US10816606
申请日：2004-04-02
申请人： Sohyun Park , Wen Zhu , Tzu-Fang Huang , Li-Qun Xia , Hichem M'Saad
发明人： Sohyun Park , Wen Zhu , Tzu-Fang Huang , Li-Qun Xia , Hichem M'Saad
IPC分类号： C23C16/44 , H01L21/316 , H01L21/469 , H01L21/768
CPC分类号： H01L21/02126 , C23C16/4404 , H01L21/02211 , H01L21/02274 , H01L21/31633 , H01L21/76829 , Y10S438/913
摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.
摘要翻译：提供了调节室的方法和在室中的基板上沉积低介电常数层。在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率第二混合物中的气体。

92. 发明申请

US20050158667A1 Solvent free photoresist strip and residue removal processing for post etching of low-k films 审中-公开
标题翻译：无溶剂的光致抗蚀剂条和残留物去除处理用于低k膜的后蚀刻
公开(公告)号：US20050158667A1
公开(公告)日：2005-07-21
申请号：US10761122
申请日：2004-01-20
申请人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul Naik , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul Naik , Li-Qun Xia , Ellie Yieh
IPC分类号： G03F7/00 , G03F7/36 , G03F7/42 , H01L21/02 , H01L21/311
CPC分类号： G03F7/427 , H01L21/02063 , H01L21/31138
摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
摘要翻译：可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

93. 发明申请

US20050153073A1 Method for forming ultra low k films using electron beam 失效
标题翻译：使用电子束形成超低k膜的方法
公开(公告)号：US20050153073A1
公开(公告)日：2005-07-14
申请号：US11076181
申请日：2005-03-09
申请人： Yi Zheng , Srinivas Nemani , Li-Qun Xia , Eric Hollar , Kang Yim
发明人： Yi Zheng , Srinivas Nemani , Li-Qun Xia , Eric Hollar , Kang Yim
IPC分类号： B05D3/06 , B05D7/24 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/312 , C23C16/00 , H01L29/76
CPC分类号： C23C16/401 , B05D1/60 , B05D3/068 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/7681
摘要： The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.
摘要翻译：本发明通常提供使用电子束处理沉积低介电常数膜的方法。在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面组在基板表面上。该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

94. 发明授权

US06753258B1 Integration scheme for dual damascene structure 失效
标题翻译：双镶嵌结构的整合方案
公开(公告)号：US06753258B1
公开(公告)日：2004-06-22
申请号：US09706298
申请日：2000-11-03
申请人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Margaret Gotuaco
发明人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Margaret Gotuaco
IPC分类号： H01L21302
CPC分类号： H01L21/76801 , H01L21/31608 , H01L21/76807 , H01L21/76834 , H01L21/76885 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for processing a substrate to form a feature in low k dielectric materials. One aspect of the invention provides a method for processing a substrate including forming a feature definition in a dielectric material deposited on a surface of a substrate, depositing one or more conductive materials to fill at least a portion of the feature definition, planarizing the substrate surface to expose the dielectric material, removing at least a portion of the dielectric material, and depositing a low k dielectric material.
摘要翻译：一种用于处理基底以在低k电介质材料中形成特征的方法和装置。本发明的一个方面提供一种处理衬底的方法，包括在沉积在衬底的表面上的电介质材料中形成特征定义，沉积一种或多种导电材料以填充特征定义的至少一部分，平坦化衬底表面以暴露电介质材料，去除介电材料的至少一部分，以及沉积低k电介质材料。

95. 发明授权

US06699784B2 Method for depositing a low k dielectric film (K>3.5) for hard mask application 失效
标题翻译：沉积用于硬掩模应用的低k电介质膜（K> 3.5）的方法
公开(公告)号：US06699784B2
公开(公告)日：2004-03-02
申请号：US10096503
申请日：2002-03-12
申请人： Li-Qun Xia , Ping Xu , Louis Yang , Tzu-Fang Huang , Wen H. Zhu
发明人： Li-Qun Xia , Ping Xu , Louis Yang , Tzu-Fang Huang , Wen H. Zhu
IPC分类号： H01L2131
CPC分类号： H01L21/31144 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/31138 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.
摘要翻译：提供了一种在低k电介质层上沉积碳氧化硅硬掩模的方法。还公开了在低k电介质层上含有碳氧化硅硬掩模的衬底。硅碳化硅硬掩模可以由包含硅氧烷的处理气体形成。

96. 发明授权

US06680164B2 Solvent free photoresist strip and residue removal processing for post etching of low-k films 失效
标题翻译：无溶剂的光致抗蚀剂条和残留物去除处理用于低k膜的后蚀刻
公开(公告)号：US06680164B2
公开(公告)日：2004-01-20
申请号：US10006563
申请日：2001-11-30
申请人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul B. Naik , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul B. Naik , Li-Qun Xia , Ellie Yieh
IPC分类号： G03F742
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
摘要翻译：可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

97. 发明授权

US06569257B1 Method for cleaning a process chamber 失效
标题翻译：清洁处理室的方法
公开(公告)号：US06569257B1
公开(公告)日：2003-05-27
申请号：US09710357
申请日：2000-11-09
申请人： Huong Thanh Nguyen , Michael Barnes , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Michael Barnes , Li-Qun Xia , Ellie Yieh
IPC分类号： B08B300
CPC分类号： H01J37/32862 , C23C16/4405
摘要： A method for cleaning silicon carbide and/or organosilicate layers from interior surfaces of a process chamber is disclosed. In one aspect, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of a process chamber by treating it with a hydrogen/fluorine-based plasma. In another aspect, silicon carbide and/or organosilicate layer are cleaned from interior surfaces of the process chamber by treating it with a hydrogen-based plasma followed by a fluorine-based plasma. Alternatively, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of the chamber by treating it with a fluorine-based plasma followed by a hydrogen-based plasma.
摘要翻译：公开了一种从处理室的内表面清洁碳化硅和/或有机硅酸盐层的方法。在一个方面，通过用氢/氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。另一方面，通过用基于氢的等离子体处理它，随后用氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。或者，通过用氟基等离子体处理，然后用氢基等离子体来清洗碳化硅和/或有机硅酸盐层，从室的内表面清洗。

98. 发明授权

US06500773B1 Method of depositing organosilicate layers 失效
标题翻译：沉积有机硅酸盐层的方法
公开(公告)号：US06500773B1
公开(公告)日：2002-12-31
申请号：US09723886
申请日：2000-11-27
申请人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh
发明人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/0276 , H01L21/3086 , H01L21/31144 , H01L21/3121 , H01L21/3122 , H01L21/31612 , H01L21/31629 , H01L21/31633 , H01L21/32139 , H01L21/76807
摘要： A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by reacting a gas mixture comprising a phenyl-based alkoxysilane compound. The gas mixture may be reacted by applying an electric field thereto. The gas mixture may optionally include an organosilane compound as well as an oxidizing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an anti-reflective coating (ARC). In another integrated circuit fabrication process, the organosilicate layer is used as a hardmask. In yet another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了形成有机硅酸盐层的方法。有机硅酸盐层通过使包含苯基烷氧基硅烷化合物的气体混合物反应而形成。可以通过向其施加电场而使气体混合物反应。气体混合物可以任选地包括有机硅烷化合物以及氧化气体。有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，有机硅酸盐层用作抗反射涂层（ARC）。在另一集成电路制造工艺中，有机硅酸盐层用作硬掩模。在又一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。

99. 发明授权

US06261975B1 Method for depositing and planarizing fluorinated BPSG films 有权
标题翻译：氟化BPSG膜的沉积和平面化方法
公开(公告)号：US06261975B1
公开(公告)日：2001-07-17
申请号：US09262782
申请日：1999-03-04
申请人： Li-Qun Xia , Francimar Campana , Ellie Yieh
发明人： Li-Qun Xia , Francimar Campana , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/56 , H01L21/02271 , H01L21/02304 , H01L21/0234 , H01L21/02362 , H01L21/31051 , H01L21/31625 , H01L21/31629
摘要： A method for improving the reflow characteristics of a BPSG film. According to the method, a fluorine- or other halogen-doped BPSG layer is deposited over a substrate and reflowed using a rapid thermal pulse (RTP) method. The use of such an RTP reflow method results in superior reflow characteristics as compared to a 20-40 minute conventional furnace reflow process. The inventors discovered that reflowing FBPSG films in a conventional furnace may result in the highly mobile fluorine atoms diffusing from the film prior to completion of the anneal. Thus, the FBPSG layer loses the improved reflow characteristics provided by the incorporation of fluorine into the film. The RTP reflow reflows the film in a minimal amount of time (e.g., 10-90 seconds depending on the temperature used to reflow the layer and the degree of planarization required among other factors). Thus, the fluorine atoms within the FBPSG layer do not have sufficient time to migrate from the layer even if the layer is deposited over a PETEOS oxide or similar layer.
摘要翻译：一种改善BPSG膜的回流特性的方法。根据该方法，将氟或其它卤素掺杂的BPSG层沉积在衬底上并使用快速热脉冲（RTP）方法回流。与20-40分钟的常规炉回流工艺相比，使用这种RTP回流方法导致优异的回流特性。本发明人发现，在常规炉中回流FBPSG膜可能导致高度可移动的氟原子在退火完成之前从膜扩散。因此，FBPSG层失去了通过将氟结合到膜中而提供的改进的回流特性。 RTP回流以最小的时间（例如10-90秒，取决于用于回流层的温度和其他因素所需的平坦化程度）来回流薄膜。因此，即使该层沉积在PETEOS氧化物或类似层上，FBPSG层内的氟原子也不具有从该层迁移的足够时间。

100. 发明授权

US6153261A Dielectric film deposition employing a bistertiarybutylaminesilane precursor 有权
标题翻译：使用二乙基丁基胺硅烷前体的介电薄膜沉积
公开(公告)号：US6153261A
公开(公告)日：2000-11-28
申请号：US322709
申请日：1999-05-28
申请人： Li-Qun Xia , Ellie Yieh
发明人： Li-Qun Xia , Ellie Yieh
IPC分类号： C23C16/34 , C23C16/40 , C23C16/52 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/318 , C23C16/30
CPC分类号： H01L21/0214 , C23C16/345 , C23C16/402 , C23C16/52 , H01L21/0217 , H01L21/02222 , H01L21/02271 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/3122
摘要： A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.
摘要翻译：一种用于提高沉积在基底上的介电膜在给定温度下的沉积速率的方法和装置，同时提供良好的阶梯覆盖和间隙填充性能。这通过使用二乙基丁基胺硅作为硅源与氧化剂反应以在包括硅的衬底上形成电介质膜来实现。

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