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91. 发明申请

US20060199731A1 Catalyst and catalyst support 审中-公开
标题翻译：催化剂和催化剂载体
公开(公告)号：US20060199731A1
公开(公告)日：2006-09-07
申请号：US10546776
申请日：2003-02-25
申请人： Naomi Noda , Shigekazu Takagi , Junichi Suzuki
发明人： Naomi Noda , Shigekazu Takagi , Junichi Suzuki
IPC分类号： B01J23/58
CPC分类号： B01J23/58 , B01D53/9422 , B01D2255/1021 , B01D2255/1023 , B01D2255/1025 , B01D2255/2022 , B01D2255/2025 , B01D2255/2027 , B01D2255/91 , B01D2255/9205 , B01J23/02 , B01J23/04 , B01J35/04 , B01J35/10 , B01J37/0215 , B01J37/0248 , F01N3/0814
摘要： A catalyst body includes a catalytic layer containing an alkali metal and/or an alkaline earth metal and a carrier carrying the catalytic layer, characterized in that the carrier has a porosity of 40% or below. According to this catalyst body, the invasion of the alkali metal and/or the alkaline earth metal contained in the catalytic layer into the inside of the carrier is inhibited and thus the carrier can sustain the strength and NOx absorptivity required as a carrier over a long period of time even upon exposure to a high temperature.
摘要翻译：催化剂体包括含有碱金属和/或碱土金属的催化剂层和承载催化剂层的载体，其特征在于载体的孔隙率为40％以下。根据该催化剂体，催化剂层中含有的碱金属和/或碱土金属向载体内部的侵入被抑制，因此载体能够维持强度和NO x 即使暴露在高温下，长时间作为载体所需的吸收率。

92. 发明申请

US20060153750A1 Plasma generating electrode and plasma reactor 失效
标题翻译：等离子体发生电极和等离子体反应器
公开(公告)号：US20060153750A1
公开(公告)日：2006-07-13
申请号：US10561841
申请日：2004-06-25
申请人： Yukio Miyairi , Yasumasa Fujioka , Masaaki Masuda , Takeshi Sakuma , Tatsuhiko Hatano , Yoshihiro Sato , Junichi Suzuki
发明人： Yukio Miyairi , Yasumasa Fujioka , Masaaki Masuda , Takeshi Sakuma , Tatsuhiko Hatano , Yoshihiro Sato , Junichi Suzuki
IPC分类号： B01J19/08
CPC分类号： F01N3/0892 , B01D53/32 , B01D2259/818 , B01J19/088 , B01J2219/0809 , B01J2219/0835 , B01J2219/0875 , B01J2219/0894 , B01J2219/2453 , B01J2219/2487 , H05H1/2406 , H05H2001/2418 , H05H2001/2437
摘要： A plasma generating electrode of the present invention includes a pair of unit electrodes 2, each of the pair of unit electrodes 2 including a plate-like ceramic body 19 and a conductive film 12 disposed inside the ceramic body 19 and including a plurality of protrusions 13 on a front surface, the pair of unit electrodes 2 constituting a basic unit 1 by being hierarchically layered at intervals corresponding to thickness of the protrusion 13 in a state that a plurality of spaces which are open on each end in the arrangement direction of the protrusion are formed, the basic units 1 constituting an electrode unit in which the basic units 1 are hierarchically layered at intervals corresponding to the thickness of the protrusion 13, and the plasma generating electrode being capable of generating plasma in the three-dimensionally arranged spaces V upon application of voltage between the unit electrodes 2 constituting the electrode unit. Therefore, the plasma generating electrode is capable of generating uniform and stable plasma and exhibiting excellent heat resistance.
摘要翻译：本发明的等离子体产生电极包括一对单位电极2，每对单元电极2包括板状陶瓷体19和布置在陶瓷体19内部的导电膜12，并且包括多个突起13 在前表面上，构成基本单元1的一对单元电极2通过以与突起13的厚度相对应的间隔对应于在突起的排列方向上的每个端部开口的多个空间的状态而分层地层叠构成电极单元的基本单元1，其中基本单元1以对应于突起13的厚度的间隔分层地层叠，并且等离子体产生电极能够在三维布置的空间V中产生等离子体在构成电极单元的单位电极2之间施加电压。因此，等离子体产生电极能够产生均匀且稳定的等离子体并且表现出优异的耐热性。

93. 发明申请

US20060146975A1 Nuclear power plant, method of forming corrosion-resistant coating therefor, and method of operating nuclear power plant 有权
标题翻译：核电厂，其耐腐蚀涂层成型方法，核电厂运行方法
公开(公告)号：US20060146975A1
公开(公告)日：2006-07-06
申请号：US11296438
申请日：2005-12-08
申请人： Masato Okamura , Tetsuo Oosato , Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Kenji Yamazaki , Junichi Takagi , Hidehiro Urata , Shunichi Suzuki , Kenro Takamori , Junichi Suzuki
发明人： Masato Okamura , Tetsuo Oosato , Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Kenji Yamazaki , Junichi Takagi , Hidehiro Urata , Shunichi Suzuki , Kenro Takamori , Junichi Suzuki
IPC分类号： G21C9/00
CPC分类号： G21C17/0225 , G21C13/08 , G21C17/022 , G21Y2002/103 , G21Y2004/10 , Y02E30/40
摘要： In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.
摘要翻译：在核电站中，将反应器结构体的金属成分表面的耐腐蚀氧化膜暴露于高温水中，含有具有P型半导体的性质的氧化物的耐腐蚀性氧化物膜，并且在氧化物膜上沉积具有N型半导体性质的催化物质。氧化膜保持P型半导体的性质。

94. 发明授权

US07064900B2 Optical pickup device and optical disk device and optical device and composite optical element 失效
标题翻译：光拾取装置和光盘装置以及光学装置和复合光学元件
公开(公告)号：US07064900B2
公开(公告)日：2006-06-20
申请号：US10492657
申请日：2002-11-19
申请人： Norio Fukasawa , Junichi Suzuki , Kiyoshi Toyota , Tetsu Tanaka , Takeshi Kubo , Masahiro Saito , Satoru Ishii
发明人： Norio Fukasawa , Junichi Suzuki , Kiyoshi Toyota , Tetsu Tanaka , Takeshi Kubo , Masahiro Saito , Satoru Ishii
IPC分类号： G02B27/10 , G11B7/00 , G11B7/135
CPC分类号： G11B7/0908 , G11B7/00 , G11B7/0901 , G11B7/0909 , G11B7/0916 , G11B7/1356 , G11B7/1381
摘要： An optical pickup device is provided which includes a first diffraction grating (45) that splits a light beam emitted from a light-emitting/-detecting element (31) into a zero-order light beam and positive and negative first-order light beams, a second diffraction grating (46) that diffracts return light from an optical disk (2) for traveling along a light path separate from that of the outgoing light, and a third diffraction grating (47) that corrects the deviation of the light path by diffracting the positive first-order light beam diffracted by the second diffraction grating (46). The light-emitting/-detecting element (31) provides a focusing error signal FE by detecting the negative first-order light beam, and a tracking error signal by detecting return portions of the positive and negative first-order light beams from the first diffraction grating (45).
摘要翻译：提供了一种光学拾取装置，其包括将从发光/检测元件（31）发射的光束分成零级光束和正和负一级光束的第一衍射光栅（45）第二衍射光栅（46），衍射来自光盘（2）的返回光，用于沿着与出射光分离的光路行进;以及第三衍射光栅（47），其通过衍射来校正光路的偏差由第二衍射光栅（46）衍射的正一级光束。发光/检测元件（31）通过检测负一阶光束提供聚焦误差信号FE，并且通过检测来自第一衍射的正和负一级光束的返回部分来提供跟踪误差信号光栅（45）。

95. 发明授权

US07064382B2 Nonvolatile memory and nonvolatile memory manufacturing method 失效
标题翻译：非易失性存储器和非易失性存储器制造方法
公开(公告)号：US07064382B2
公开(公告)日：2006-06-20
申请号：US11074064
申请日：2005-03-08
申请人： Noriaki Kodama , Kohji Kanamori , Junichi Suzuki , Teiichirou Nishizaka , Yasuhide Den , Shinji Fujieda , Akio Toda
发明人： Noriaki Kodama , Kohji Kanamori , Junichi Suzuki , Teiichirou Nishizaka , Yasuhide Den , Shinji Fujieda , Akio Toda
IPC分类号： H01L29/788
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/1033 , H01L29/7845 , H01L29/7846 , H01L29/7881
摘要： A nonvolatile memory device includes source and drain regions formed in a semiconductor substrate, and an insulating film formed on a channel region between the source region and the drain region in the semiconductor substrate. The nonvolatile memory device also includes a dielectric film formed above the channel region to store electric charge, and a control gate formed on the dielectric film. Compressive stress in the channel region is equal to or less than 50 MPa.
摘要翻译：非易失性存储器件包括形成在半导体衬底中的源区和漏区，以及形成在半导体衬底中的源区和漏区之间的沟道区上的绝缘膜。非易失性存储器件还包括形成在通道区域上方以存储电荷的电介质膜，以及形成在电介质膜上的控制栅极。通道区域的压缩应力为50MPa以下。

96. 发明授权

US07045483B2 Catalyst element 有权
公开(公告)号：US07045483B2
公开(公告)日：2006-05-16
申请号：US10257211
申请日：2002-01-18
申请人： Naomi Noda , Junichi Suzuki , Kanji Yamada
发明人： Naomi Noda , Junichi Suzuki , Kanji Yamada
IPC分类号： B01J23/00
CPC分类号： B01D53/9422 , B01D53/945 , B01D2255/1021 , B01D2255/2022 , B01D2255/2042 , B01D2255/2047 , B01D2255/91 , B01J23/02 , B01J23/58 , B01J37/0244 , B01J37/0248 , Y02T10/22
摘要： A catalyst body is obtained by loading, on a carrier, a catalyst layer containing an alkali metal and/or an alkaline earth metal, wherein at least one kind of alkali metal and/or alkaline earth metal is allowed to be present in the carrier and/or between the carrier and the catalyst layer. With this catalyst body, the deterioration of the carrier caused by the alkali metal, etc. is prevented effectively and the long-term use has been made possible.

97. 发明申请

US20050239026A1 Form evaluation system and method 审中-公开
标题翻译：表格评估制度和方法
公开(公告)号：US20050239026A1
公开(公告)日：2005-10-27
申请号：US10889098
申请日：2004-07-13
申请人： Junichi Suzuki , Yutaka Sato
发明人： Junichi Suzuki , Yutaka Sato
IPC分类号： A63B69/36 , A63B69/00
CPC分类号： A63B24/0003 , A63B69/36 , A63B2024/0012 , A63B2220/806 , A63B2225/20
摘要： It is sought to provide a form evaluation system, which permits clear visual comparison of an ideal form and the own form on an image and accurately understanding points to be improved. A database is formed with check points of the form in golf, for instance, as reference data of form evaluation. A predetermined division number of still images are produced from motion picture image data of subscriber, these still images are displayed on a personal computer display screen, the form of the subscriber's still images is evaluated with the database as reference, and on the basis of the evaluation a form evaluation sheet is produced, which contains a predetermined division number of serially changing still images and form guide comments each provided for each of these still images.
摘要翻译：旨在提供一种形式评估系统，其允许对图像上的理想形式和自己的形式进行清晰的视觉比较，并准确地理解要改进的点。以高尔夫形式的检查点形成数据库，例如作为表格评估的参考数据。根据用户的动态图像图像数据生成预定的静止图像分割数，将这些静止图像显示在个人计算机显示画面上，以数据库为参考，以用户静止图像的形式为基础，产生评估表格评估表，该表格评估表包含每个为这些静止图像提供的每个静态图像的预定分割数和形式指导注释。

98. 发明申请

US20050218922A1 Method and apparatus for testing defective portion of semiconductor device 有权
标题翻译：用于测试半导体器件的缺陷部分的方法和装置
公开(公告)号：US20050218922A1
公开(公告)日：2005-10-06
申请号：US11088833
申请日：2005-03-25
申请人： Junichi Suzuki , Kohji Kanamori
发明人： Junichi Suzuki , Kohji Kanamori
IPC分类号： G01R31/28 , G01R31/26 , G11C16/06 , G11C29/00 , G11C29/06 , H01L21/66 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G01R31/2621
摘要： An apparatus for testing a defect, includes a semiconductor element. In the semiconductor element, a conductive film is formed on an STI (shallow trench isolation) insulating film, which fills a shallow trench extending into a semiconductor region, through an insulating film in an ordinary state, and the shallow trench is not completely or sufficiently filled with the STI insulating film in a defective state. Also, the apparatus includes a control circuit configured to set a test mode in response to a test mode designation signal, a first voltage applying circuit configured to output a first voltage to the conductive film in the test mode, and a second voltage applying circuit configured to output a second voltage to the semiconductor region in the test mode. The first voltage is higher than the second voltage, and a voltage difference between the first voltage and the second voltage is sufficient to cause breakdown between the conductive film and the semiconductor region in the defective state.
摘要翻译：用于测试缺陷的装置包括半导体元件。在半导体元件中，在通常通过绝缘膜的STI（浅沟槽隔离）绝缘膜上形成导电膜，其通过绝缘膜填充延伸到半导体区域中的浅沟槽，并且浅沟槽不完全或充分填充有缺陷状态的STI绝缘膜。此外，该装置包括：控制电路，被配置为响应于测试模式指定信号设置测试模式;第一电压施加电路，被配置为在测试模式下向导电膜输出第一电压;以及第二电压施加电路，以在测试模式中向半导体区域输出第二电压。第一电压高于第二电压，并且第一电压和第二电压之间的电压差足以导致在缺陷状态下导电膜和半导体区域之间的击穿。

99. 发明申请

US20050199945A1 Nonvolatile memory and nonvolatile memory manufacturing method 失效
标题翻译：非易失性存储器和非易失性存储器制造方法
公开(公告)号：US20050199945A1
公开(公告)日：2005-09-15
申请号：US11074064
申请日：2005-03-08
申请人： Noriaki Kodama , Kohji Kanamori , Junichi Suzuki , Teiichirou Nishizaka , Yasuhide Den , Shinji Fujieda , Akio Toda
发明人： Noriaki Kodama , Kohji Kanamori , Junichi Suzuki , Teiichirou Nishizaka , Yasuhide Den , Shinji Fujieda , Akio Toda
IPC分类号： H01L21/8247 , H01L21/8239 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/10 , H01L29/745 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/1033 , H01L29/7845 , H01L29/7846 , H01L29/7881
摘要： A nonvolatile memory device includes source and drain regions formed in a semiconductor substrate, and an insulating film formed on a channel region between the source region and the drain region in the semiconductor substrate. The nonvolatile memory device also includes a dielectric film formed above the channel region to store electric charge, and a control gate formed on the dielectric film. Compressive stress in the channel region is equal to or less than 50 MPa.
摘要翻译：非易失性存储器件包括形成在半导体衬底中的源区和漏区，以及形成在半导体衬底中的源区和漏区之间的沟道区上的绝缘膜。非易失性存储器件还包括形成在通道区域上方以存储电荷的电介质膜，以及形成在电介质膜上的控制栅极。通道区域的压缩应力为50MPa以下。

100. 发明申请

US20050025002A1 Optical head and recording and/or reproducing apparatus employing same 失效
标题翻译：光头以及使用其的记录和/或再现装置
公开(公告)号：US20050025002A1
公开(公告)日：2005-02-03
申请号：US10849158
申请日：2004-05-20
申请人： Masahiro Saito , Norio Fukasawa , Kiyoshi Toyota , Junichi Suzuki , Minoru Kubo , Souichi Murakami
发明人： Masahiro Saito , Norio Fukasawa , Kiyoshi Toyota , Junichi Suzuki , Minoru Kubo , Souichi Murakami
IPC分类号： G11B7/09 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , G11B7/00
CPC分类号： G11B7/1275 , G11B7/131 , G11B7/1353 , G11B7/1359 , G11B7/1395 , G11B7/22
摘要： Disclosed is an optical head in which position adjustment of a photodetector light receiving surface or component parts may be simplified, production costs may be reduced and operational reliability may be improved. The optical head includes a light source 22, radiating light of a preset wavelength, an objective lens 27 for condensing the outgoing light from the light source 22 on an optical disc 2 and for condensing the return light from the optical disc 2, a beam splitter 25 for branching the optical path of the return light reflected by the optical disc 2, and for collimating the branched return light so as to be parallel to the outgoing light from the light source 22, a composite optical component including a splitting prism 30 arranged on a site of incidence of the branched return light for spatially splitting the return light, and a light receiving unit for receiving plural return light beams spatially split by the splitting prism 30 for producing focusing error signals.
摘要翻译：公开了一种可以简化光电检测器光接收表面或部件的位置调整的光学头，可以降低生产成本并且可以提高操作可靠性。光头包括一个照射预定波长的光源22，用于将来自光源22的输出光聚焦在光盘2上并用于聚光来自光盘2的返回光的物镜27，一个分束器 25，用于分支由光盘2反射的返回光的光路，并且用于使分支的返回光准直以与来自光源22的出射光平行;复合光学部件，包括分离棱镜30，其布置在用于空间分离返回光的分支返回光的入射部位，以及用于接收由分割棱镜30空间分裂的多个返回光束的光接收单元，用于产生聚焦误差信号。

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