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91. 发明申请

US20060110844A1 Fabrication of thin film germanium infrared sensor by bonding to silicon wafer 有权
标题翻译：通过粘合到硅晶片制造薄膜锗红外传感器
公开(公告)号：US20060110844A1
公开(公告)日：2006-05-25
申请号：US10993533
申请日：2004-11-19
申请人： Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu , Douglas Tweet
发明人： Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu , Douglas Tweet
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L21/187 , H01L21/76254 , H01L27/1443 , H01L31/02327 , H01L31/105 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a thin film germanium photodetector includes preparing a silicon substrate; fabricating a CMOS device on the silicon substrate; preparing a germanium substrate; preparing surfaces of each substrate for bonding; bonding the germanium substrate to the CMOS-bearing silicon substrate to form a bonded structure; removing a portion of the germanium substrate from the bonded structure; forming a PIN diode in the germanium substrate; removing a portion of the germanium layer by etching; and completing the germanium photo detector.
摘要翻译：制造薄膜锗光电探测器的方法包括制备硅衬底; 在硅衬底上制造CMOS器件; 制备锗衬底; 准备每个基板的表面以进行接合; 将锗衬底结合到具有CMOS的硅衬底以形成结合结构; 从结合结构去除锗衬底的一部分; 在锗衬底中形成PIN二极管; 通过蚀刻去除锗层的一部分; 并完成锗光电检测器。

92. 发明申请

US20050181592A1 Low temperature anneal to reduce defects in hydrogen-implanted, relaxed SiGe layer 有权
标题翻译：低温退火以减少氢注入，弛豫SiGe层的缺陷
公开(公告)号：US20050181592A1
公开(公告)日：2005-08-18
申请号：US10780929
申请日：2004-02-17
申请人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa
发明人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa
IPC分类号： H01L21/205 , H01L21/20 , H01L21/265 , H01L21/324 , H01L21/331
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/02694 , H01L21/324 , H01L21/3247
摘要： A method of forming a SiGe layer having a relatively high Ge content includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the Ge content of the SiGe layer is equal to or greater than 10%, implanting H2+ ions through the SiGe layer into the substrate at a dose of between about 2×1014 cm−2 to 2×1016 cm−2, at an energy of between about 20 keV to 100+ keV; low temperature thermal annealing at a temperature of between about 200° C. to 400° C. for between about ten minutes and ten hours; high temperature thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an inert atmosphere at a temperature of between about 650° C. to 1000° C. for between about 30 seconds and 30 minutes; and depositing a layer of silicon-based material on the relaxed SiGe layer to a thickness of between about 5 nm to 30 nm.
摘要翻译：形成Ge含量较高的SiGe层的方法包括制备硅衬底; 将SiGe层沉积至约100nm至500nm的厚度，其中SiGe层的Ge含量等于或大于10％，注入H 2 O + SUP +离子通过SiGe层以约2×10 14 cm -2至2×10 16 cm -3的剂量进入衬底，在约20keV至100eKeV之间的能量; 在约200℃至400℃的温度下进行约10分钟至10小时的低温热退火; 在惰性气氛中，在约650℃至1000℃的温度下，在约30秒至30分钟之间，使衬底和SiGe层进行高温热退火以使SiGe层松弛; 以及在松弛的SiGe层上沉积一层硅基材料至约5nm至30nm的厚度。

93. 发明授权

US07927909B2 Germanium film optical device fabricated on a glass substrate 有权
标题翻译：在玻璃基板上制造的锗膜光学器件
公开(公告)号：US07927909B2
公开(公告)日：2011-04-19
申请号：US12434118
申请日：2009-05-01
申请人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
发明人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
IPC分类号： H01L21/00
CPC分类号： H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14689 , H01L27/1469 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/351 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes.
摘要翻译：玻璃基板上的锗（Ge）光电二极管阵列具有相应的制造方法。提供未掺杂或轻掺杂第一掺杂剂的Ge衬底。第一掺杂剂可以是n型或p型掺杂剂。 Ge衬底的第一表面适度地掺杂有第一掺杂剂并且结合到玻璃衬底顶表面。然后，Ge衬底第二表面的第一区域被第一掺杂剂重掺杂。 Ge衬底第二表面的第二区域重掺杂有与第一掺杂剂相反的电子亲和力的第二掺杂剂，形成pn结。在Ge衬底第二表面上形成层间电介质（ILD）层，并且在覆盖Ge衬底第二表面的第一和第二区域的ILD层中蚀刻接触孔。接触孔填充有金属，并且金属垫形成在接触孔上。

94. 发明申请

US20070259467A1 FABRICATION OF VERTICAL SIDEWALLS ON (110) SILICON SUBSTRATES FOR USE IN SI/SIGE PHOTODETECTORS 有权
标题翻译：用于SI / SIGE光电二极管的（110）硅基板上的垂直边的制造
公开(公告)号：US20070259467A1
公开(公告)日：2007-11-08
申请号：US11416985
申请日：2006-05-02
申请人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
发明人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L31/1812 , Y02E10/50
摘要： A method of fabricating vertical sidewalls on silicon (110) substrates for use in Si/SiGe photodetectors includes preparing a silicon (110) layer wherein the silicon (110) plane is parallel to an underlying silicon wafer surface. Masking the silicon (110) layer with mask sidewalls parallel to a silicon (111) layer plane and etching the silicon (110) layer to remove an un-masked portion thereof, leaving a patterned silicon (110) layer having vertical silicon (111) sidewalls. Removing the mask; growing SiGe-containing layers on the patterned silicon (110) layer; and fabricating a photodetector.
摘要翻译：在Si / SiGe光电探测器中使用的在硅（110）衬底上制造垂直侧壁的方法包括制备硅（110）层，其中硅（110）平面平行于下面的硅晶片表面。屏蔽具有平行于硅（111）层平面的掩模侧壁的硅（110）层并蚀刻硅（110）层以去除其未掩蔽部分，留下具有垂直硅（111）的图案化硅（110）层，侧壁取下面罩; 在图案化的硅（110）层上生长含SiGe的层; 并制造光电检测器。

95. 发明申请

US20070004067A1 Floating body germanium phototransistor with photo absorption threshold bias region 有权
标题翻译：具有光吸收阈值偏置区域的浮体锗光电晶体管
公开(公告)号：US20070004067A1
公开(公告)日：2007-01-04
申请号：US11261191
申请日：2005-10-28
申请人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
发明人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/1136
摘要： A floating body germanium (Ge) phototransistor with a photo absorption threshold bias region, and an associated fabrication process are presented. The method includes: providing a p-doped Silicon (Si) substrate; selectively forming an insulator layer overlying a first surface of the Si substrate; forming an epitaxial Ge layer overlying the insulator layer; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers; forming source/drain (S/D) regions in the Ge layer; and, forming a photo absorption threshold bias region in the Ge layer, adjacent the channel region. In one aspect, the second S/D region has a length, longer than the first S/D length. The photo absorption threshold bias region underlies the second S/D region. Alternately, the second S/D region is separated from the channel by an offset, and the photo absorption threshold bias region is the offset in the Ge layer, after a light p-doping.
摘要翻译：提出了具有光吸收阈值偏置区域的浮体锗（Ge）光电晶体管，以及相关的制造工艺。该方法包括：提供p掺杂硅（Si）衬底; 选择性地形成覆盖在所述Si衬底的第一表面上的绝缘体层; 形成覆盖绝缘体层的外延Ge层; 在Ge层中形成沟道区; 形成栅极电介质，栅电极和栅极间隔物; 在Ge层中形成源极/漏极（S / D）区域; 并且在Ge层中形成邻近沟道区的光吸收阈值偏置区域。在一个方面，第二S / D区域具有比第一S / D长度更长的长度。光吸收阈值偏置区域位于第二S / D区域的下方。或者，第二S / D区域与沟道分离偏移，光吸收阈值偏置区域是在光p掺杂之后的Ge层中的偏移。

96. 发明申请

US20060194418A1 Smooth surface liquid phase epitaxial germanium 有权
标题翻译：光滑表面液相外延锗
公开(公告)号：US20060194418A1
公开(公告)日：2006-08-31
申请号：US11339017
申请日：2006-01-25
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , David Evans , Allen Burmaster
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , David Evans , Allen Burmaster
IPC分类号： H01L21/20 , H01L21/311
CPC分类号： C30B19/00 , C30B29/08 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02623 , H01L21/02639 , H01L21/30625 , H01L21/7624 , H01L27/14683 , H01L27/14689 , H01L29/16 , H01L29/78 , H01L31/028 , H01L31/105 , H01L31/1126 , H01L31/1136 , H01L31/1804 , H01L31/1808 , Y02E10/547 , Y02P70/521
摘要： A method is provided for forming a liquid phase epitaxial (LPE) germanium (Ge)-on-insulator (GOI) thin-film with a smooth surface. The method provides a silicon (Si) wafer, forms a silicon nitride insulator layer overlying the Si wafer, and selectively etches the silicon nitride insulator layer, forming a Si seed access region. Then, the method conformally deposits Ge overlying the silicon nitride insulator layer and Si seed access region, forming a Ge layer with a first surface roughness, and smoothes the Ge layer using a chemical-mechanical polish (CMP) process. Typically, the method encapsulates the Ge layer and anneals the Ge layer to form a LPE Ge layer. A Ge layer is formed with a second surface roughness, less than the first surface roughness. In some aspects, the method forms an active device in the LPE Ge layer.
摘要翻译：提供一种形成具有光滑表面的液相外延（LPE）锗（Ge） - 绝缘体（GOI）薄膜的方法。该方法提供硅（Si）晶片，形成覆盖Si晶片的氮化硅绝缘体层，并且选择性地蚀刻氮化硅绝缘体层，形成Si种子接入区域。然后，该方法共同沉积覆盖氮化硅绝缘体层和Si种子访问区域的Ge，形成具有第一表面粗糙度的Ge层，并且使用化学机械抛光（CMP）工艺平滑Ge层。通常，该方法封装Ge层并退火Ge层以形成LPE Ge层。 Ge层形成有小于第一表面粗糙度的第二表面粗糙度。在某些方面，该方法在LPE Ge层中形成有源器件。

97. 发明申请

US20060160291A1 Integration of biaxial tensile strained NMOS and uniaxial compressive strained PMOS on the same wafer 有权
标题翻译：将双轴拉伸应变NMOS和单轴压应变PMOS集成在同一晶圆上
公开(公告)号：US20060160291A1
公开(公告)日：2006-07-20
申请号：US11039542
申请日：2005-01-19
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
IPC分类号： H01L21/8238
CPC分类号： H01L29/7842 , H01L21/76254 , H01L21/823807 , H01L21/823814 , H01L21/823828 , H01L21/84 , H01L27/1203
摘要： A method of fabricating a biaxial tensile strained layer for NMOS fabrication and a uniaxial compressive strained layer for PMOS fabrication on a single wafer for use in CMOS ICs, includes preparing a silicon substrate for CMOS fabrication; depositing, patterning and etching a first and second insulating layers; removing a portion of the second insulating layer from a PMOS active area; depositing a layer of epitaxial silicon on the PMOS active area; removing a portion of the second insulating layer from an NMOS active area; growing an epitaxial silicon layer and growing an epitaxial SiGe layer on the NMOS active area; implanting H2+ ions; annealing the wafer to relax the SiGe layer; removing the remaining second insulating layer from the wafer; growing a layer of silicon; finishing a gate module; depositing a layer of SiO2 to cover the NMOS wafer; etching silicon in the PMOS active area; selectively growing a SiGe layer on the PMOS active area; wherein the silicon layer in the NMOS active area is under biaxial tensile strain, and the silicon layer in the PMOS active area is uniaxial compressive strained; and completing the CMOS device.
摘要翻译：制造用于NMOS制造的双轴拉伸应变层的方法和用于CMOS IC的单个晶片上的用于PMOS制造的单轴压缩应变层包括制备用于CMOS制造的硅衬底; 沉积，图案化和蚀刻第一和第二绝缘层; 从PMOS有源区域去除所述第二绝缘层的一部分; 在PMOS有源区上沉积一层外延硅; 从NMOS有源区域去除所述第二绝缘层的一部分; 生长外延硅层并在NMOS有源区上生长外延SiGe层; 注入H 2 O 2 + + / - +离子; 退火晶片以松弛SiGe层; 从晶片上去除剩余的第二绝缘层; 生长一层硅; 完成门模块; 沉积SiO 2层以覆盖NMOS晶片; 蚀刻PMOS有源区中的硅; 在PMOS有源区上选择性地生长SiGe层; 其中所述NMOS有源区中的硅层处于双轴拉伸应变下，并且所述PMOS有源区中的硅层是单轴压缩应变的; 并完成CMOS设备。

98. 发明申请

US20060030124A1 Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass 有权
标题翻译：使用牺牲玻璃在塑料上制造单层和多层单晶硅和硅器件的方法
公开(公告)号：US20060030124A1
公开(公告)日：2006-02-09
申请号：US10913677
申请日：2004-08-05
申请人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
发明人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
IPC分类号： H01L21/30 , H01L21/20
CPC分类号： H01L21/26506 , H01L21/187 , H01L21/6835 , H01L2221/6835 , H01L2221/68368 , Y10S438/977
摘要： A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon layer; splitting the wafer; removing the silicon layer and a portion of the SiGe layer; depositing a dielectric on the silicon side of the silicon-on-glass wafer; applying adhesive and bonding a plastic substrate to the silicon side of the silicon-on-glass wafer; removing the glass from the glass side of the bonded, silicon-on-glass wafer to form a silicon-on-plastic wafer; and completing a desired IC device on the silicon-on-plastic. Multi-level structure may be fabricated according to the method of the invention by repeating the last few steps of the method of the invention.
摘要翻译：通过层转移制造硅塑料层的方法包括在硅衬底上沉积SiGe层; 沉积一层硅; 将氢离子注入到硅衬底中; 将玻璃基板结合到硅层; 分裂晶片; 去除所述硅层和所述SiGe层的一部分; 在玻璃上硅晶片的硅侧沉积电介质; 施加粘合剂并将塑料基板粘合到硅玻璃晶片的硅侧; 从接合的硅玻璃晶片的玻璃面上移除玻璃以形成硅 - 硅晶片; 并在塑料硅胶上完成所需的IC器件。可以通过重复本发明方法的最后几个步骤，根据本发明的方法制造多层结构。

99. 发明申请

US20050153474A1 Vertical optical path structure for infrared photodetection 有权
标题翻译：用于红外光电检测的垂直光路结构
公开(公告)号：US20050153474A1
公开(公告)日：2005-07-14
申请号：US10755567
申请日：2004-01-12
申请人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
发明人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
IPC分类号： G01J5/20 , H01L21/00 , H01L21/20 , H01L27/146 , H01L29/165 , H01L31/028 , H01L31/0352 , H01L31/10 , H01L31/109 , H01L31/18
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02532 , H01L21/02639 , H01L27/14627 , H01L27/14643 , H01L31/02327 , H01L31/028 , H01L31/035281 , H01L31/108 , H01L31/109 , H01L31/1812 , Y02E10/547
摘要： Provided are a SiGe vertical optical path and a method for selectively forming a SiGe optical path normal structure for IR photodetection. The method comprises: forming a Si substrate surface; forming a Si feature, normal with respect to the Si substrate surface, such as a trench, via, or pillar; and, selectively forming a SiGe optical path overlying the Si normal feature. In some aspects, the Si substrate surface is formed a first plane and the Si normal feature has walls (sidewalls), normal with respect to the Si substrate surface, and a surface in a second plane, parallel to the first plane. Then, selectively forming a SiGe optical path overlying the Si normal feature includes forming a SiGe vertical optical path overlying the normal feature walls.
摘要翻译：提供了SiGe垂直光路和用于选择性地形成用于IR光电检测的SiGe光路法线结构的方法。该方法包括：形成Si衬底表面; 形成Si特征，相对于诸如沟槽，通孔或支柱的Si衬底表面是正常的; 并且选择性地形成覆盖Si正常特征的SiGe光路。在一些方面，Si衬底表面形成第一平面，并且Si正常特征具有相对于Si衬底表面法线的壁（侧壁）和平行于第一平面的第二平面中的表面。然后，选择性地形成覆盖Si正常特征的SiGe光路包括形成覆盖正常特征壁的SiGe垂直光路。

100. 发明申请

US20100276776A1 Germanium Film Optical Device Fabricated on a Glass Substrate 有权
标题翻译：锗薄膜光学元件制造在玻璃基板上
公开(公告)号：US20100276776A1
公开(公告)日：2010-11-04
申请号：US12434118
申请日：2009-05-01
申请人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
发明人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
IPC分类号： H01L31/028 , H01L21/02 , H01L31/0216
CPC分类号： H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14689 , H01L27/1469 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/351 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes.
摘要翻译：玻璃基板上的锗（Ge）光电二极管阵列具有相应的制造方法。提供未掺杂或轻掺杂第一掺杂剂的Ge衬底。第一掺杂剂可以是n型或p型掺杂剂。 Ge衬底的第一表面适度地掺杂有第一掺杂剂并且结合到玻璃衬底顶表面。然后，Ge衬底第二表面的第一区域被第一掺杂剂重掺杂。 Ge衬底第二表面的第二区域重掺杂有与第一掺杂剂相反的电子亲和力的第二掺杂剂，形成pn结。在Ge衬底第二表面上形成层间电介质（ILD）层，并且在覆盖Ge衬底第二表面的第一和第二区域的ILD层中蚀刻接触孔。接触孔填充有金属，并且金属垫形成在接触孔上。

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