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91. 发明申请

US20080310997A1 METHOD AND APPARATUS FOR REMOVAL OF VAPORIZED HYDROGEN PEROXIDE FROM A REGION 有权
标题翻译：从一个区域去除过氧化氢的方法和装置
公开(公告)号：US20080310997A1
公开(公告)日：2008-12-18
申请号：US11763574
申请日：2007-06-15
申请人： Michael A. Centanni , Peter A. Burke
发明人： Michael A. Centanni , Peter A. Burke
IPC分类号： A61L9/015 , B01J19/00
CPC分类号： A61L2/208 , A61L2/202 , A61L2/206 , A61L9/015 , A61L2202/13
摘要： A method and apparatus for aerating a region exposed to a gaseous/vaporous sterilant. A catalytic destroyer and a reactive chemical unit are used to reduce the concentration of the gaseous/vaporous sterilant within the region. The reactive chemical unit includes a chemistry that is chemically reactive with the gaseous/vaporous sterilant. In one embodiment, the gaseous/vaporous sterilant is vaporized hydrogen peroxide and the chemistry of the reactive chemical unit includes thiosulfate and iodide.
摘要翻译：用于对暴露于气体/蒸气灭菌剂的区域进行曝气的方法和装置。催化破坏剂和反应性化学单元用于降低该区域内气态/蒸气灭菌剂的浓度。反应性化学单元包括与气态/蒸气灭菌剂化学反应的化学物质。在一个实施方案中，气态/蒸气灭菌剂是蒸发的过氧化氢，并且反应性化学单元的化学性质包括硫代硫酸盐和碘化物。

92. 发明授权

US07402770B2 Nano structure electrode design 有权
标题翻译：纳米结构电极设计
公开(公告)号：US07402770B2
公开(公告)日：2008-07-22
申请号：US11270104
申请日：2005-11-09
申请人： Sey-Shing Sun , Hemanshu D. Bhatt , Peter A. Burke , Richard J. Carter
发明人： Sey-Shing Sun , Hemanshu D. Bhatt , Peter A. Burke , Richard J. Carter
IPC分类号： H01H9/00 , G11C11/50 , H01L21/00 , H01L23/58
CPC分类号： G11C13/025 , B82Y10/00 , H01L51/0048 , H01L51/0595 , Y10S977/724
摘要： A microelectronic switch having a substrate layer, an electrically conductive switching layer formed on the substrate layer, an electrically conductive cavity layer formed on the switching layer, an electrically conductive cap layer formed on the cavity layer, the cap layer forming a first electrode and a second electrode that are physically and electrically separated one from another, and which both at least partially overlie the switching layer, and a cavity disposed between the switching layer and the second electrode, where the switching is layer is flexible to make electrical contact with the second electrode by flexing through the cavity upon selective application of an electrical bias.
摘要翻译：具有衬底层的微电子开关，形成在衬底层上的导电开关层，形成在开关层上的导电腔层，形成在腔层上的导电帽层，形成第一电极的帽层和第二电极在物理上和电气上彼此分离，并且至少部分地覆盖在开关层上，并且设置在开关层和第二电极之间的空腔，其中开关层是柔性的，以与第二电极电接触电极通过在选择性地施加电偏压时通过空腔弯曲。

93. 发明申请

US20080152544A1 Building decontamination with vaporous hydrogen peroxide 有权
公开(公告)号：US20080152544A1
公开(公告)日：2008-06-26
申请号：US12074354
申请日：2008-03-03
申请人： Iain F. McVey , Victor M. Selig , Lewis I. Schwartz , Gerald E. McDonnell , Peter A. Burke
发明人： Iain F. McVey , Victor M. Selig , Lewis I. Schwartz , Gerald E. McDonnell , Peter A. Burke
IPC分类号： A61L9/015 , B01J19/00
CPC分类号： A61L2/208 , A61L2/24 , A61L9/015 , A61L2202/14 , A61L2202/25 , F24F3/16 , F24F2003/1664
摘要： When microbial contamination is introduced into a room (20*) of an enclosure, such as a building, an HVAC system including supply ductwork (16) and a return ductwork (34) is decontaminated with hydrogen peroxide vapor. A decontamination controller (46) operates controllable baffles (22) at outlet registers (20), temporary controllable baffles (44) at inlet registers (30), and a blower system (10) to circulate hydrogen peroxide vapor from hydrogen peroxide vapor generators (42) through the ductwork in both forward and reverse directions. Further, at least portions of the baffles are closed to create dwell times in which the hydrogen peroxide vapor resides in the ductwork with minimal or turbulent flow.

94. 发明授权

US07361304B2 Building decontamination with vaporous hydrogen peroxide 有权
标题翻译：用蒸汽过氧化氢建造净化
公开(公告)号：US07361304B2
公开(公告)日：2008-04-22
申请号：US10767908
申请日：2004-01-29
申请人： Ian F. McVey , Victor M. Selig , Lewis I. Schwartz , Gerald E. McDonnell , Peter A. Burke
发明人： Ian F. McVey , Victor M. Selig , Lewis I. Schwartz , Gerald E. McDonnell , Peter A. Burke
IPC分类号： A61L2/20
CPC分类号： A61L2/208 , A61L2/24 , A61L9/015 , A61L2202/14 , A61L2202/25 , F24F3/16 , F24F2003/1664
摘要： When microbial contamination is introduced into a room (20*) of an enclosure, such as a building, an HVAC system including supply ductwork (16) and a return ductwork (34) is decontaminated with hydrogen peroxide vapor. A decontamination controller (46) operates controllable baffles (22) at outlet registers (20), temporary controllable baffles (44) at inlet registers (30), and a blower system (10) to circulate hydrogen peroxide vapor from hydrogen peroxide vapor generators (42) through the ductwork in both forward and reverse directions. Further, at least portions of the baffles are closed to create dwell times in which the hydrogen peroxide vapor resides in the ductwork with minimal or turbulent flow.
摘要翻译：当将微生物污染物引入诸如建筑物的外壳的房间（20 *）中时，包括供应管道系统（16）和回流管道系统（34）的HVAC系统用过氧化氢蒸气去污。净化控制器（46）在出口寄存器（20），入口寄存器（30）处的临时可控挡板（44）和用于使来自过氧化氢蒸汽发生器的过氧化氢蒸气循环的鼓风机系统（10）上操作可控挡板（22） 42）通过管道系统在正向和反向两个方向。此外，挡板的至少一部分被关闭以产生停留时间，其中过氧化氢蒸汽驻留在具有最小或湍流的管道系统中。

95. 发明授权

US07160805B1 Inter-layer interconnection structure for large electrical connections 有权
标题翻译：用于大型电气连接的层间互连结构
公开(公告)号：US07160805B1
公开(公告)日：2007-01-09
申请号：US10623082
申请日：2003-07-17
申请人： Peter A. Burke , William K. Barth
发明人： Peter A. Burke , William K. Barth
IPC分类号： H01L21/44
CPC分类号： H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention include an electrical interconnection structure for connection to large electrical contacts. The electrical interconnection includes a semiconductor substrate having a conductive pad layer formed thereon. A dielectric layer having a plurality of elongate trenches is formed over the conductive pad layer such that the elongate trenches extend through the dielectric layer to the underlying conductive pad layer. Elongate conductive contacts are formed in the elongate trenches to establish electrical connections to the underlying conductive pad layer. The long axes of the elongate bar trenches can be arranged substantially parallel to the long axes of the slots formed in the copper pad. Alternatively, the long axes of the bar trenches can be arranged transversely to the long axes of the slots formed in the copper pad. In some embodiments, the conductive contacts are formed such that they establish electrical connection with sidewalls of the underlying conductive pad layer. Other embodiments address the methods of manufacturing the electrical interconnection structures of the present invention.
摘要翻译：本发明的实施例包括用于连接到大电触头的电互连结构。电互连包括其上形成有导电焊盘层的半导体衬底。具有多个细长沟槽的电介质层形成在导电焊盘层上方，使得细长的沟槽延伸通过介电层延伸到下面的导电焊盘层。在细长的沟槽中形成细长的导电触点以建立与下面的导电焊盘层的电连接。细长条沟的长轴可以布置成基本上平行于形成在铜垫中的槽的长轴。或者，条形沟槽的长轴可以横向于形成在铜垫中的槽的长轴布置。在一些实施例中，导电触点形成为使得它们与下面的导电焊盘层的侧壁建立电连接。其他实施例涉及制造本发明的电互连结构的方法。

96. 发明授权

US06987059B1 Method and structure for creating ultra low resistance damascene copper wiring 有权
标题翻译：制造超低电阻大马士革铜线的方法和结构
公开(公告)号：US06987059B1
公开(公告)日：2006-01-17
申请号：US10641768
申请日：2003-08-14
申请人： Peter A. Burke , Hongqiang Lu , Sey-Shing Sun
发明人： Peter A. Burke , Hongqiang Lu , Sey-Shing Sun
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76807 , H01L21/76831 , H01L21/76841
摘要： A low resistance copper damascene interconnect structure is formed by providing a thin dielectric film such as SiC or SiOC formed on the sidewalls of the via and trench structures to function as a copper diffusion barrier layer. The dielectric copper diffusion barrier formed on the bottom of the trench structure is removed by anisotropic etching to expose patterned metal areas. The residual dielectric thus forms a dielectric diffusion barrier film on the sidewalls of the structure, and coupled with the metal diffusion barrier subsequently formed in the trench, creates a copper diffusion barrier to protect the bulk dielectric from copper leakage.
摘要翻译：通过在通孔和沟槽结构的侧壁上形成诸如SiC或SiOC的薄介电膜来形成低电阻铜镶嵌互连结构，起到铜扩散阻挡层的作用。通过各向异性蚀刻去除在沟槽结构的底部形成的电介质铜扩散屏障，以露出图案化的金属区域。因此，残余电介质在结构的侧壁上形成电介质扩散阻挡膜，并与随后在沟槽中形成的金属扩散阻挡层耦合，形成铜扩散阻挡层，以保护大块电介质免受铜泄漏。

97. 发明授权

US06699299B2 Composition and method for polishing in metal CMP 有权
标题翻译：金属CMP抛光的组成和方法
公开(公告)号：US06699299B2
公开(公告)日：2004-03-02
申请号：US10393074
申请日：2003-03-20
申请人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
发明人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.
摘要翻译：在本发明中提供一种组合物，用于研磨包含金属层（例如钨，铝或铜），阻挡层（例如钽，氮化钽，钛或氮化钛）的绝缘体的复合半导体结构层（如SiO2）。组合物包含水性介质，氧化剂，有机聚合物，其减弱氧化膜的去除。组合物可任选地包含络合剂和/或分散剂。

98. 发明授权

US06693035B1 Methods to control film removal rates for improved polishing in metal CMP 失效
标题翻译：控制膜去除速率以改善金属CMP抛光的方法
公开(公告)号：US06693035B1
公开(公告)日：2004-02-17
申请号：US09420682
申请日：1999-10-19
申请人： Vikas Sachan , Peter A. Burke , Elizabeth A. (Kegerise) Langlois , Keith G. Pierce
发明人： Vikas Sachan , Peter A. Burke , Elizabeth A. (Kegerise) Langlois , Keith G. Pierce
IPC分类号： H01L21302
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： A method for chemical mechanical planarization of a semiconductor structure comprised of a conductive metal interconnect layer, a barrier or liner film, and an underlying dielectric layer using a two-step polishing process is provided. In the first step, the conducting metal overburden is substantially removed with little removal of the barrier or liner layer or the underlying dielectric structure. In the second step, the barrier layer is removed with little removal of the underlying dielectric layer. Five different methods and associated slurry compositions are described for the second polishing step, each adjusted to the state of the wafer following the first step of polishing. By using the appropriate method, the integrity of the remaining semiconductor structure can be substantially retained.
摘要翻译：提供了使用两步抛光工艺的由导电金属互连层，阻挡层或衬里膜以及下层介电层构成的半导体结构的化学机械平面化方法。在第一步骤中，导电金属覆盖层基本上被除去，几乎没有去除阻挡层或衬里层或下面的介电结构。在第二步骤中，去除阻挡层，几乎不去除下面的介电层。对于第二抛光步骤描述了五种不同的方法和相关的浆料组合物，每种调整至第一抛光步骤后的晶片状态。通过使用适当的方法，可以基本上保持剩余半导体结构的完整性。

99. 发明授权

US06602112B2 Dissolution of metal particles produced by polishing 失效
标题翻译：通过抛光产生的金属颗粒的溶解
公开(公告)号：US06602112B2
公开(公告)日：2003-08-05
申请号：US09764817
申请日：2001-01-18
申请人： Tony Quan Tran , Vikas Sachan , David Gettman , Terence M. Thomas , Craig D. Lack , Peter A. Burke
发明人： Tony Quan Tran , Vikas Sachan , David Gettman , Terence M. Thomas , Craig D. Lack , Peter A. Burke
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B31/16 , B24B37/042 , B24B49/04 , B24B49/12
摘要： A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.
摘要翻译：一种通过使用抛光垫和过氧化氢在半导体衬底上抛光金属表面的方法，并且通过抛光从半导体衬底去除金属颗粒，并将该颗粒溶解在过氧化氢中。

100. 发明授权

US06475069B1 Control of removal rates in CMP 失效
标题翻译：控制CMP中的去除率
公开(公告)号：US06475069B1
公开(公告)日：2002-11-05
申请号：US09693211
申请日：2000-10-20
申请人： Terence M. Thomas , Qianqiu (Christine) Ye , Joseph K. So , Peter A. Burke
发明人： Terence M. Thomas , Qianqiu (Christine) Ye , Joseph K. So , Peter A. Burke
IPC分类号： B24B100
CPC分类号： B24B37/0056 , B24B37/04
摘要： A method for CMP polishing with a first step slurry composition selective to a metal in a metal layer to remove the metal at a high removal rate during polishing, and a second step slurry composition selective to a barrier film and least selective to either of an underlying dielectric layer or a metal interconnection structure in the dielectric layer, to remove the barrier film at a high removal rate during polishing, and level a surface of the dielectric layer to the surface of the interconnection structure.
摘要翻译：一种用于在抛光期间以高去除速率选择性地金属层中的金属的第一阶段浆料组合物的CMP抛光方法，以及对阻挡膜有选择性并且对底层中的任一个具有最小选择性的第二步骤浆料组合物介电层或电介质层中的金属互连结构，以便在抛光过程中以高的去除速率除去阻挡膜，并使电介质层的表面平坦于互连结构的表面。

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