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91. 发明申请

US20120057746A1 INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING METHOD 有权
标题翻译：信息处理设备和信息处理方法
公开(公告)号：US20120057746A1
公开(公告)日：2012-03-08
申请号：US13217458
申请日：2011-08-25
申请人： Yusuke Sakai , Shingo Tsurumi , Kazuya Katsuki , Masao Kondo
发明人： Yusuke Sakai , Shingo Tsurumi , Kazuya Katsuki , Masao Kondo
IPC分类号： G06K9/00
CPC分类号： G06K9/00355 , G06K9/3216 , G06K2209/27
摘要： A processing device and method are provided. According to illustrative embodiments, the device and method are implemented by detecting a face region of an image, setting at least one action region according to the position of the face region, processing image data corresponding to the at least one action region to determine whether or not a predetermined action has been performed, and performing processing corresponding to the predetermined action when it is determined that the predetermined action has been performed.
摘要翻译：提供了一种处理装置和方法。根据说明性实施例，通过检测图像的面部区域，根据脸部区域的位置设置至少一个动作区域，处理与至少一个动作区域对应的图像数据，来实现该装置和方法，以确定是否或不是已经执行了预定动作，并且当确定已经执行了预定动作时，执行与预定动作相对应的处理。

92. 发明申请

US20110294445A1 Semiconductor Antenna Switch 有权
标题翻译：半导体天线开关
公开(公告)号：US20110294445A1
公开(公告)日：2011-12-01
申请号：US13113743
申请日：2011-05-23
申请人： Satoshi Goto , Masao Kondo
发明人： Satoshi Goto , Masao Kondo
IPC分类号： H04B1/44
CPC分类号： H01P1/15 , H01P1/213
摘要： A semiconductor antenna switch has an antenna terminal, a transmission terminal and a reception terminal. The antenna switch is capable of reducing harmonic distortion even though it includes field effect transistors formed over a silicon substrate. A shunt transistor including a plurality of series-connected field effect transistors is connected between he transmission terminal and a common terminal, such as a common terminal, which may be an electrical ground. Off capacitances and/or gate widths of a plurality of the series-connected field effect transistors increase monotonically in the direction from the common terminal to the transmission terminal, or equivalently, decrease monotonically in the direction from the transmission terminal to the common terminal.
摘要翻译：半导体天线开关具有天线端子，发送端子和接收端子。天线开关即使包括形成在硅衬底上的场效应晶体管也能够减少谐波失真。包括多个串联连接的场效应晶体管的并联晶体管连接在传输终端和诸如可以是电接地的公共端子的公共端子之间。多个串联场效应晶体管的关断电容和/或栅极宽度在从公共端子到发送端子的方向上单调增加，或者等效地在从发送端子到公共端子的方向上单调减小。

93. 发明申请

US20110292091A1 DISPLAY UNIT 有权
标题翻译：显示单元
公开(公告)号：US20110292091A1
公开(公告)日：2011-12-01
申请号：US13115218
申请日：2011-05-25
申请人： Masao Kondo , Mitsuaka Kimura , Junko Teshima , Yoshihide Kurimoto , Takayuki Fujishima , Hiroshi Furukawa , Akio Suzuki
发明人： Masao Kondo , Mitsuaka Kimura , Junko Teshima , Yoshihide Kurimoto , Takayuki Fujishima , Hiroshi Furukawa , Akio Suzuki
IPC分类号： G09G5/10
CPC分类号： H04R29/008 , G01R13/402 , G09G3/32 , G09G3/3225 , G09G2380/10
摘要： A display unit includes: a display section having a plurality of light-emitting devices arranged in a straight line; a driving section supplying a display driving signal for controlling the luminance of each of the light-emitting devices; and a display control section connected to the driving section for supplying the driving section with either a first display control signal for controlling the luminance of the light-emitting devices to display a preset display pattern according to an operation control signal from a controller or a second display control signal for controlling the luminance of the light-emitting devices in synchronism with the level of an audio signal, wherein the first display control signal is generated based on a wave function.
摘要翻译：显示单元包括：显示部，其具有以直线排列的多个发光器件; 提供用于控制每个发光装置的亮度的显示驱动信号的驱动部分; 以及显示控制部分，连接到驱动部分，用于向驱动部分提供用于控制发光装置的亮度的第一显示控制信号，以根据来自控制器的操作控制信号显示预设的显示图案或第二显示控制信号，用于与音频信号的电平同步地控制发光装置的亮度，其中基于波函数产生第一显示控制信号。

94. 发明申请

US20100212504A1 GAS SEPARATION MEMBRANE 有权
标题翻译：气体分离膜
公开(公告)号：US20100212504A1
公开(公告)日：2010-08-26
申请号：US12739292
申请日：2008-10-23
申请人： Atsushi Shimizu , Masao Kondo , Junichi Yamamoto
发明人： Atsushi Shimizu , Masao Kondo , Junichi Yamamoto
IPC分类号： B01D53/22
CPC分类号： B01D69/02 , B01D53/228 , B01D67/002 , B01D67/0027 , B01D67/003 , B01D67/0083 , B01D67/0095 , B01D69/10 , B01D71/06 , B01D71/26 , B01D71/32 , B01D71/36 , B01D2256/12 , B01D2257/102 , B01D2323/20 , B01D2325/02 , B01D2325/20 , B01D2325/22 , B01D2325/24
摘要： Problem to be Solved: To provide a gas separation membrane having an excellent performance balance (balance between gas permeation performance and gas separation ability) as a gas separation membrane.Solution: A gas separation membrane comprising a porous support member and a gas separating resin layer formed on the porous support member, wherein the porous support member has a mode diameter as measured by a mercury porosimeter of from 0.005 μm to 0.3 μm, and a pore size distribution index as measured by the mercury porosimeter of from 1 to 15.
摘要翻译：要解决的问题：提供作为气体分离膜具有优异性能平衡（气体渗透性能和气体分离能力之间的平衡）的气体分离膜。解决方案：一种气体分离膜，包括多孔支撑构件和形成在所述多孔支撑构件上的气体分离树脂层，其中所述多孔支撑构件具有通过水银孔隙度计测量的模直径为0.005μm至0.3μm，水银孔隙度计测量的尺寸分布指数为1至15。

95. 发明申请

US20100051891A1 Electronic element including ferroelectric substance film and method of manufacturing the same 有权
公开(公告)号：US20100051891A1
公开(公告)日：2010-03-04
申请号：US12149962
申请日：2008-05-12
申请人： Masao Kondo , Kazuaki Kurihara
发明人： Masao Kondo , Kazuaki Kurihara
IPC分类号： H01L45/00
CPC分类号： G02F1/0553 , H01L21/28291 , H01L29/516 , H01L29/78391
摘要： A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of crystal axis by enhancing the crystal property and alignment property of the ferroelectric substance film formed through epitaxial growth with reference to the plane alignment of semiconductor substrate. After the yttrium stabilized zirconium film and a film of the rock salt structure are sequentially formed with epitaxial growth on a semiconductor substrate, the ferroelectric substance film of simple Perovskite structure is also formed with epitaxial growth. The ferroelectric substance film can improve the crystal property and alignment property thereof by rotating the plane for 45 degrees within the plane for the crystal axis of the yttrium stabilized zirconium.

96. 发明授权

US07642789B2 Storage device, and writing unit diagnosing method 失效
标题翻译：存储设备和书写单元诊断方法
公开(公告)号：US07642789B2
公开(公告)日：2010-01-05
申请号：US11699628
申请日：2007-01-30
申请人： Nobuyoshi Yamasaki , Masao Kondo
发明人： Nobuyoshi Yamasaki , Masao Kondo
IPC分类号： G01R31/08 , G06F11/00 , G11B5/09
CPC分类号： G11B27/36 , G11B5/455 , G11B19/046 , G11B2220/2516
摘要： The present invention provides a storage device and a writing unit diagnosing method, which can determine a defect in a writing unit at an early stage. There is provided a storage device, which includes writing units that write data to a storage medium, current application units that apply a current to the writing units, electric property measurement units that measure the electric property of the writing units at the time of applying a current by the current application units, and obtain electric property measured values, a storage unit that stores the electric property measured values obtained by the electric property measurement units, and a judgment unit that judges whether or not the writing units are abnormal based on the electric property measured values stored in the storage unit.
摘要翻译：本发明提供一种可以在早期阶段确定书写单元中的缺陷的存储装置和书写单元诊断方法。提供了一种存储装置，其包括向存储介质写入数据的写入单元，向写入单元施加电流的当前应用单元，测量应用时的写入单元的电性能的电性能测量单元电流，并获得电特性测量值，存储单元，其存储由电性测量单元获得的电特性测量值;以及判断单元，其基于电气判断写入单元是否异常存储在存储单元中的属性测量值。

97. 发明授权

US07436046B2 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07436046B2
公开(公告)日：2008-10-14
申请号：US11242961
申请日：2005-10-05
申请人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
发明人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
IPC分类号： H01L31/117
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/165 , H01L29/6659 , H01L29/66659
摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.
摘要翻译：提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。在位于栅电极末端并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×10 19 cm -3， -3以下。

98. 发明申请

US20080180849A1 Magnetic head support, manufacturing methods therefor, and magnetic disk device 审中-公开
标题翻译：磁头支撑，其制造方法和磁盘装置
公开(公告)号：US20080180849A1
公开(公告)日：2008-07-31
申请号：US12008872
申请日：2008-01-15
申请人： Shigeyoshi Umemiya , Masaharu Hida , Masao Kondo , Tsuyoshi Aoki
发明人： Shigeyoshi Umemiya , Masaharu Hida , Masao Kondo , Tsuyoshi Aoki
IPC分类号： G11B5/48 , H01L41/24
CPC分类号： G11B5/4826 , G11B5/4873 , H01L41/094 , H01L41/1876 , H01L41/316 , H01L41/332 , Y10T29/42
摘要： According to an aspect of an embodiment, a method for manufacturing a magnetic head support having a piezoelectric device on a metal plate member comprises the steps of: providing a metal plate member; forming a piezoelectric layer of a piezoelectric material on the plate member at an elevated temperature; forming a first electrode layer of an electrical conducting material on the piezoelectric layer; and bending the metal plate member at a bending portion adjacent to the piezoelectric layer while the temperature is lowered from the elevated temperature after forming the piezoelectric layer.
摘要翻译：根据实施例的一个方面，一种用于制造在金属板构件上具有压电装置的磁头支撑件的方法包括以下步骤：提供金属板构件; 在升高的温度下在所述板构件上形成压电材料的压电层; 在所述压电层上形成导电材料的第一电极层; 以及在形成压电层之后，从升高的温度降低温度的同时，在与压电体层相邻的弯曲部弯曲金属板部件。

99. 发明申请

US20080167191A1 Superconducting filter device and filter characteristic tuning method 审中-公开
标题翻译：超导滤波器和滤波器特性调谐方法
公开(公告)号：US20080167191A1
公开(公告)日：2008-07-10
申请号：US11984904
申请日：2007-11-26
申请人： Keisuke Sato , Masao Kondo
发明人： Keisuke Sato , Masao Kondo
IPC分类号： H01P1/20
CPC分类号： H01P1/20363
摘要： A superconducting filter device includes a dielectric base, a resonator pattern formed of a superconducting material on the dielectric base, an anisotropic dielectric or magnetic body positioned over the resonator pattern, and an angle adjusting mechanism for changing a horizontal angle of the anisotropic dielectric or magnetic body with respect to an input signal.
摘要翻译：超导滤波器装置包括电介质基底，由电介质基底上的超导材料形成的谐振器图案，位于谐振器图案上方的各向异性介电体或磁体，以及用于改变各向异性介电体或磁体的水平角度的角度调节机构相对于输入信号。

100. 发明授权

US07368172B2 Membrane multi-layer structure, and actuator element, capacitive element and filter element using the same 有权
标题翻译：膜多层结构和致动器元件，电容元件和使用其的过滤元件
公开(公告)号：US07368172B2
公开(公告)日：2008-05-06
申请号：US10832428
申请日：2004-04-27
申请人： Masao Kondo , Kazuaki Kurihara
发明人： Masao Kondo , Kazuaki Kurihara
IPC分类号： B32B9/06 , B32B9/00
CPC分类号： C30B29/22 , C30B23/02 , H01L21/31641 , H01L21/31691 , H01L41/0815 , H01L41/0973 , H01L41/1876 , H01L41/318 , H01L41/319 , H03H9/02574
摘要： By performing epitaxial growth on a semiconductor substrate while keeping conformity, a membrane multi-layer structure showing increased polarization is provided.A membrane multi-layer structure comprising a thin layer composed of zirconium oxide as the main component for allowing epitaxial growth, a thin layer having a simple perovskite structure, showing in-plane rotation by 45° of the (001) plane to the thin layer composed of zirconium oxide as the main component and performing epitaxial growth, and an intermediate layer provided between the thin layer composed of zirconium oxide as the main component and the thin layer having a simple perovskite structure.
摘要翻译：通过在保持一致性的同时在半导体衬底上进行外延生长，提供显示增加的极化的膜多层结构。一种膜多层结构，包括由氧化锆作为允许外延生长的主要成分的薄层，具有简单的钙钛矿结构的薄层，其显示（001）面的45°平面内的薄层由氧化锆作为主要成分构成并进行外延生长，以及设置在以氧化锆为主要成分的薄层和具有简单的钙钛矿结构的薄层之间的中间层。

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