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    • 95. 发明授权
    • Spectra based endpointing for chemical mechanical polishing
    • 基于光谱的化学机械抛光终点
    • US07406394B2
    • 2008-07-29
    • US11261742
    • 2005-10-28
    • Boguslaw A. SwedekDominic J. BenvegnuJeffrey Drue David
    • Boguslaw A. SwedekDominic J. BenvegnuJeffrey Drue David
    • G01B5/02G01B7/02G01B11/02G01B13/02
    • B24B49/12B24B37/013B24B37/205B24B49/08B24D7/14G05B15/02H01L21/31053H01L21/3212H01L22/26
    • Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting two or more reference spectra. Each reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectra is selected for particular spectra-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectra-based endpoint logic. The method includes obtaining two or more current spectra. Each current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved.
    • 用于基于频谱的终点的方法和装置。 一种终点方法包括选择两个或更多个参考光谱。 每个参考光谱是在第一衬底上从感兴趣的膜反射的白光的光谱,并且具有大于目标厚度的厚度。 为特定的基于光谱的端点确定逻辑选择参考光谱,以便通过应用特定的基于光谱的端点逻辑来调用端点时实现目标厚度。 该方法包括获得两个或更多个当前光谱。 每个电流光谱是当感兴趣的膜经受抛光步骤并且具有大于目标厚度的电流厚度时,在第二衬底上从感兴趣的膜反射的白光的光谱。 该方法包括为第二基底确定何时已经实现了抛光步骤的终点。
    • 97. 发明授权
    • Metrology for chemical mechanical polishing
    • 化学机械抛光测量
    • US07195535B1
    • 2007-03-27
    • US11187612
    • 2005-07-22
    • Boguslaw A. SwedekDominic J. Benvegnu
    • Boguslaw A. SwedekDominic J. Benvegnu
    • B24B49/12B24B7/22
    • B24B49/12B24B37/345
    • Methods and apparatus for providing metrology for chemical mechanical polishing. A chemical mechanical polishing system includes a first polishing station, a second polishing station, a transport device, and a first measuring station. The transport device is configured to hold a workpiece during polishing at the first and second polishing stations and to move the workpiece from the first polishing station to the second polishing station. The first measuring station is situated to measure a characteristic of the workpiece when the transport device is holding the workpiece and when the workpiece is not in contact with a polishing pad of any of the first polishing station and the second polishing station.
    • 提供化学机械抛光测量的方法和设备。 化学机械抛光系统包括第一抛光站,第二抛光站,输送装置和第一测量站。 输送装置构造成在抛光期间在第一和第二抛光站处保持工件并将工件从第一抛光站移动到第二抛光站。 第一测量站用于当传送装置保持工件时以及当工件不与第一抛光站和第二抛光站中的任何一个的抛光垫接触时,测量工件的特性。
    • 99. 发明授权
    • Optical detection of metal layer clearance
    • 光学检测金属层间隙
    • US09233450B2
    • 2016-01-12
    • US13584565
    • 2012-08-13
    • Jeffrey Drue DavidDominic J. Benvegnu
    • Jeffrey Drue DavidDominic J. Benvegnu
    • B24B37/013B24B37/04B24B49/12
    • B24B37/013B24B37/042B24B49/12
    • A method of controlling polishing includes polishing a metal layer of a substrate. The metal layer overlies an underlying layer structure. During polishing of the metal layer, a light beam is directed onto the first substrate. The metal layer is sufficiently thin that a portion of the light beam reflects from an exposed surface of the metal layer and a portion of the light beam passes through the metal layer and reflects from the underlying layer structure to generate a reflected light beam. The reflected light beam is monitored during polishing and a sequence of measured spectra is generated from the reflected light beam. At least one of a polishing endpoint or an adjustment for a polishing rate is determined from the sequence of measured spectra.
    • 控制抛光的方法包括抛光衬底的金属层。 金属层覆盖下层结构。 在抛光金属层期间,将光束引导到第一基板上。 金属层足够薄,使得一部分光束从金属层的暴露表面反射,并且光束的一部分穿过金属层并从下面的层结构反射以产生反射光束。 在抛光期间监测反射光束,并从反射光束产生测量光谱序列。 从测量光谱的顺序确定抛光终点或抛光速率的调整中的至少一个。