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91. 发明授权

US07071272B2 Method for preparing unsaturated compound by pyrolysis reaction 有权
标题翻译：通过热解反应制备不饱和化合物的方法
公开(公告)号：US07071272B2
公开(公告)日：2006-07-04
申请号：US10307388
申请日：2002-12-02
申请人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Masakuni Sato , Hidenobu Murofushi , Koichi Yanase , Yasuhiro Suzuki
发明人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Masakuni Sato , Hidenobu Murofushi , Koichi Yanase , Yasuhiro Suzuki
IPC分类号： C08F16/24
CPC分类号： C07C43/17 , C07C41/18 , C07C41/28 , C07C43/172 , C07C2601/14
摘要： The present invention provides a method for preparing a compound of CF3CF2CF2OCF═CF2 by pyrolyzing a compound expressed by CF3CF2CF2OCF(CF3)COOCF2CF(CF3)OCF2CF2CF3 in a gas phase at a temperature of from 200° C. to 500° C.
摘要翻译：本发明提供了通过以下方法制备CF 3 CF 2 CF 2 OCF-CF 2的化合物的方法：热解由CF 3 CF 2 CO 2 CF 2（CF 3）COOCF 2表示的化合物， / CF 2 CF 3 CF 3 CF 3 CF 3 CF 3 CF 3在气相中在温度为从200℃至500℃

92. 发明申请

US20060030733A1 Process for producing perfluorodiacyl fluorinated compounds 失效
公开(公告)号：US20060030733A1
公开(公告)日：2006-02-09
申请号：US11206915
申请日：2005-08-19
申请人： Shu-Zhong Wang , Takashi Okazoe , Eisuke Murotani , Kunio Watanabe , Daisuke Shirakawa , Kazuya Oharu
发明人： Shu-Zhong Wang , Takashi Okazoe , Eisuke Murotani , Kunio Watanabe , Daisuke Shirakawa , Kazuya Oharu
IPC分类号： C07C59/135
CPC分类号： C07C59/60 , C07C51/09 , C07C59/315 , C07C67/14 , C07C67/31 , C07C69/708 , C07C69/734
摘要： The present invention provides a process for producing compounds useful as raw materials for various fluororesins in high yields in few steps from inexpensive and readily available starting materials. The following compound (1) and the following compound (2) are reacted to form the following compound (3), then the compound (3) is fluorinated in a liquid phase to form the following compound (4), and the ester bonds in the compound (4) are dissociated to form the compound (5), or the compound (5) and the compound (6). HOCH2-Q-O—(CH2)3—OH (1), CRBCOX (2), RBCOOCH2-Q-O—(CH2)3—OCORB (3), RBFCOOCF2-QF-O—(CF2)3—OCORBF (4), FCO-QF-O—(CF2)2—COF (5), RBFCOF (6).

93. 发明授权

US06911513B2 Fluorinated diene compound and fluoropolymer, and methods for their production 失效
标题翻译：氟化二烯化合物和含氟聚合物及其制备方法
公开(公告)号：US06911513B2
公开(公告)日：2005-06-28
申请号：US10834076
申请日：2004-04-29
申请人： Kimiaki Kashiwagi , Gen Ogawa , Takashi Okazoe , Kunio Watanabe , Eisuke Murotani , Kazuya Oharu
发明人： Kimiaki Kashiwagi , Gen Ogawa , Takashi Okazoe , Kunio Watanabe , Eisuke Murotani , Kazuya Oharu
IPC分类号： C07C43/17 , C08F16/32 , C08F214/18 , G02B1/04 , C08F136/16
CPC分类号： G02B6/02038 , C07C43/17 , C08F16/32 , C08F214/18 , G02B1/046 , G02B6/02033 , C08L29/10
摘要： A novel fluoropolymer which can be an optical resin material having a low refractive index and excellent heat resistance, and a novel fluorinated diene compound having two unsaturated bonds, capable of presenting such a fluoropolymer, are presented. Further, by virtue of the low refractive index and excellent heat resistance, the polymer presents a high performance optical transmitter and a plastic optical fiber.A fluorinated diene compound represented by CF2═CFCF(ORf)CF2OCF═CF2 (wherein Rf is a perfluoroalkyl group such as a trifluoromethyl group), and a fluoropolymer thereof. Further, an optical transmitter made by using such a fluoropolymer, and a plastic optical fiber having a core comprising such a fluoropolymer and a fluorinated low molecular weight compound contained therein as a refractive index-increasing agent.
摘要翻译：本发明提供一种可以是具有低折射率和优异的耐热性的光学树脂材料的新型含氟聚合物，以及具有两个不饱和键的氟化二烯化合物，能够呈现这种含氟聚合物。此外，由于低折射率和优异的耐热性，聚合物呈现高性能的光发射机和塑料光纤。由CF 2 -CFFF（OR 2）CF 2 OCF-CF 2 2表示的氟化二烯化合物（其中 R ff是全氟烷基，例如三氟甲基）及其含氟聚合物。此外，使用这种氟聚合物制成的光发送器，以及包含其中包含这种含氟聚合物的核心和其中含有的氟化低分子量化合物的塑料光纤作为折射增加剂。

94. 发明授权

US06876057B2 Semiconductor devices including fuses and dummy fuses 失效
标题翻译：包括保险丝和虚拟保险丝的半导体器件
公开(公告)号：US06876057B2
公开(公告)日：2005-04-05
申请号：US10243297
申请日：2002-09-13
申请人： Kunio Watanabe
发明人： Kunio Watanabe
IPC分类号： H01L21/3205 , G11C29/04 , H01L21/82 , H01L21/822 , H01L23/52 , H01L23/525 , H01L27/04 , H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device may include a fuse section 100 having a layer in which a plurality of fuses 26 that are fusible by irradiation of an energy beam are formed, and a circuit wiring layer 200 formed in the fuse section 100. The circuit wiring layer 200 is disposed in a layer below the layer in which the fuses 26 are formed, and is not connected to the fuses 26.
摘要翻译：半导体器件可以包括具有通过形成能量束的照射可熔融的多个保险丝26的层的熔丝部100和形成在熔丝部100中的电路布线层200.电路布线层200 设置在形成保险丝26的层下方的层中，并且不连接到保险丝26。

95. 发明授权

US06791147B1 Semiconductor memory device and method for manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06791147B1
公开(公告)日：2004-09-14
申请号：US09431762
申请日：1999-11-01
申请人： Junichi Karasawa , Kunio Watanabe , Takeshi Kumagai
发明人： Junichi Karasawa , Kunio Watanabe , Takeshi Kumagai
IPC分类号： H01L2976
CPC分类号： H01L27/11 , H01L21/823892 , H01L27/0928
摘要： A semiconductor memory device has a peripheral circuit area and a memory cell area on a main surface thereof. The semiconductor memory device includes a first well formed in the peripheral circuit area, a second well of a first conductivity type formed in the memory cell area, a third well of a second conductivity type formed in the memory cell area, and a device isolation structure formed in the memory cell area for isolating an element formed in the second well from an element formed in the third well. The second well of the first conductivity type has a depth shallower than a depth of the first well. The third well of the second conductivity type is equal in depth to the second well. The second and third wells are formed down to a level lower than the device isolation structure.
摘要翻译：半导体存储器件在其主表面上具有外围电路区域和存储单元区域。半导体存储器件包括形成在外围电路区域中的第一阱，形成在存储单元区域中的第一导电类型的第二阱，形成在存储单元区域中的第二导电类型的第三阱，以及器件隔离结构形成在用于将形成在第二阱中的元件与形成在第三阱中的元件隔离的存储单元区域中。第一导电类型的第二阱具有比第一阱的深度浅的深度。第二导电类型的第三阱与第二阱的深度相等。第二和第三阱形成为低于器件隔离结构的水平。

96. 发明授权

US06534864B1 Semiconductor memory device and method of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06534864B1
公开(公告)日：2003-03-18
申请号：US09428821
申请日：1999-10-28
申请人： Kazuo Tanaka , Takashi Kumagai , Junichi Karasawa , Kunio Watanabe
发明人： Kazuo Tanaka , Takashi Kumagai , Junichi Karasawa , Kunio Watanabe
IPC分类号： H01L2348
CPC分类号： H01L27/11 , H01L27/1104 , Y10S257/903
摘要： A semiconductor memory device (SRAM) comprises memory cells, each of which includes two load transistors, two driver transistors and two transfer transistors. The SRAM cell includes a semiconductor substrate in which the transistors are formed, a first interlayer dielectric formed on the semiconductor substrate, first contact portions formed in the first interlayer dielectric and first wiring layers (node wiring layers and pad layers) formed on the first interlayer dielectric. The first contact portions and the first wiring layers include metal layers made of refractory metal and a refractory metal nitride layers. This semiconductor memory device of the present invention is capable of enhancing an integration degree of wiring layers and achieving a microfabrication.
摘要翻译：半导体存储器件（SRAM）包括存储单元，每个存储单元包括两个负载晶体管，两个驱动晶体管和两个转移晶体管。 SRAM单元包括其中形成晶体管的半导体衬底，形成在半导体衬底上的第一层间电介质，形成在第一层间电介质中的第一接触部分和形成在第一层间电介质上的第一布线层（节点布线层和衬垫层）电介质。第一接触部分和第一布线层包括由难熔金属制成的金属层和难熔金属氮化物层。本发明的半导体存储器件能够提高布线层的集成度并实现微细加工。

97. 发明授权

US06459139B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06459139B2
公开(公告)日：2002-10-01
申请号：US09727705
申请日：2000-12-04
申请人： Kunio Watanabe , Kazuhiko Okawa
发明人： Kunio Watanabe , Kazuhiko Okawa
IPC分类号： H01L2900
CPC分类号： H01L27/0251
摘要： The semiconductor device has an insulated-gate field-effect transistor (MOS transistor), a bipolar transistor, and a Zener diode. The MOS transistor is formed in a well of a first conductive type (p-type) and has a gate insulation layer, a gate electrode, side wall insulation layers, and second conductive type (n-type) of source and drain regions. The bipolar transistor has the drain region as a collector region, the well as a base region, and an n-type impurity-diffusion layer isolated from the drain region as an emitter region. The Zener diode is formed by the junction of an n-type impurity-diffusion layer continuous with the drain region and a p-type impurity-diffusion layer. The source and drain regions have a silicide layer formed on the surface thereof. A protection layer is formed on the surface of the n-type impurity-diffusion layer of the Zener diode.
摘要翻译：半导体器件具有绝缘栅场效应晶体管（MOS晶体管），双极晶体管和齐纳二极管。 MOS晶体管形成在第一导电类型（p型）的阱中，并且具有栅极绝缘层，栅电极，侧壁绝缘层和第二导电类型（n型）源极和漏极区。双极晶体管具有漏极区域作为集电极区域，阱作为基极区域，以及与漏极区域隔离的n型杂质扩散层作为发射极区域。齐纳二极管由与漏极区连续的n型杂质扩散层和p型杂质扩散层的结形成。源区和漏区在其表面上形成硅化物层。在齐纳二极管的n型杂质扩散层的表面上形成保护层。

98. 发明授权

US06232670B1 Semiconductor memory device and method of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06232670B1
公开(公告)日：2001-05-15
申请号：US09361043
申请日：1999-07-26
申请人： Takashi Kumagai , Junichi Karasawa , Kazuo Tanaka , Kunio Watanabe
发明人： Takashi Kumagai , Junichi Karasawa , Kazuo Tanaka , Kunio Watanabe
IPC分类号： H01L2711
CPC分类号： H01L27/1104
摘要： First and second memory cells of an SRAM comprises first, second, and third conductive layers. The first conductive layer is a gate electrode for a first load transistor and a first driver transistor. The second conductive layer diverges from the first conductive layer on a field oxide region and is electrically connected to a second driver transistor active region. The third conductive layer is a gate electrode for a second load transistor and a second driver transistor. The third conductive layer is electrically connected to a first load transistor active region. The pattern of the first, second, and third conductive layers of the second memory cell is a rotated pattern of the first, second, and third conductive layers in the first memory cell at an angle of 180 degrees around an axis perpendicular to the main surface of a semiconductor substrate.
摘要翻译： SRAM的第一和第二存储单元包括第一，第二和第三导电层。第一导电层是用于第一负载晶体管和第一驱动晶体管的栅电极。第二导电层从场氧化物区域上的第一导电层发散，并且电连接到第二驱动器晶体管有源区。第三导电层是用于第二负载晶体管的栅电极和第二驱动晶体管。第三导电层电连接到第一负载晶体管有源区。第二存储单元的第一，第二和第三导电层的图案是第一存储单元中的第一，第二和第三导电层的旋转图案，围绕垂直于主表面的轴以180度的角度的半导体衬底。

99. 发明授权

US5892958A Peripheral equipment control device 失效
标题翻译：外围设备控制装置
公开(公告)号：US5892958A
公开(公告)日：1999-04-06
申请号：US757318
申请日：1996-11-27
申请人： Yukari Nagashige , Shoichi Miyazawa , Kunio Watanabe , Kouji Shida , Shinichi Kojima
发明人： Yukari Nagashige , Shoichi Miyazawa , Kunio Watanabe , Kouji Shida , Shinichi Kojima
IPC分类号： G06F1/32 , G06F13/10 , G06F15/78
CPC分类号： G06F1/3215 , G06F1/325 , G06F1/3268 , Y02B60/1246 , Y02B60/32
摘要： A peripheral equipment control LSI interposed between an SCSI bus connected to a main CPU and peripheral equipment such as a file device. The LSI is divided into two major blocks. One block recognizes an SCSI protocol ID signal sent over the SCSI bus. The other block generates a signal that causes the other block to leave a sleep state (low power dissipation mode). In a state in which a command is awaited from the main CPU, the peripheral equipment control LSI allows the block containing the ID recognition part to remain active while the other block is kept in the sleep state. On receiving an ID-based selected (access) signal from the main CPU, the LSI detects the start of an access operation and causes the other block to leave its sleep state and to become active.
摘要翻译：插入在连接到主CPU的SCSI总线和诸如文件装置的外围设备之间的外围设备控制LSI。 LSI分为两大块。一个块识别通过SCSI总线发送的SCSI协议ID信号。另一个块产生一个信号，导致另一个块离开睡眠状态（低功耗模式）。在从主CPU等待命令的状态下，外围设备控制LSI允许包含ID识别部分的块保持活动，而另一个块保持在睡眠状态。在从主CPU接收到基于ID的选择（访问）信号时，LSI检测到访问操作的开始，并使其他块离开其休眠状态并变为活动状态。

100. 发明授权

US5883960A Method of mobile unit registration and method of IC card registration for mobile communications system, and mobile unit, IC card, and IC card insertion type mobile unit implementing such methods 失效
标题翻译：移动单元注册方法和移动通信系统IC卡注册方法，移动单元，IC卡和IC卡插入式移动单元实现这种方法
公开(公告)号：US5883960A
公开(公告)日：1999-03-16
申请号：US825659
申请日：1997-04-03
申请人： Minoru Maruyama , Hiroshi Kanno , Shuuji Fujiwara , Kunio Watanabe
发明人： Minoru Maruyama , Hiroshi Kanno , Shuuji Fujiwara , Kunio Watanabe
IPC分类号： G06F21/24 , G09C1/00 , H04W8/24 , H04W12/04 , H04W12/06 , H04W88/02 , H04L9/32 , H04B7/26
CPC分类号： H04W12/04 , H04L63/0853 , H04W12/06 , H04W12/12 , H04W88/02 , H04W8/245 , Y02B60/50
摘要： To prevent illegal duplication of an ID containing type mobile unit, and illegal duplication of an IC card for an IC card insertion type mobile unit, in manufacturing a COB device, a public key KE.sub.COB, corresponding to a common secret key KD.sub.COB determined through consultation among communications carriers, is stored into a ROM in an unalterable form. In manufacturing a mobile unit, KE.sub.Cj that corresponds to a secret key KD.sub.Cj uniquely assigned to each communications carrier, is signature-encrypted with KD.sub.COB. The result E(KD.sub.COB, KE.sub.Cj) is entered into a COB device to write in KE.sub.Cj ; the COB device 22 is then assembled, prior to shipment, into the mobile unit into which a mobile unit secret key KD.sub.MSNi and public key KE.sub.MSNi have been stored. In registration of the mobile unit, E(KD.sub.Cj, ID) received from the communications carrier is entered into the COB device 22, thereby writing personal information ID. For a readout, KD.sub.MSNi is input to read out the ID.
摘要翻译：为了防止ID包含类型的移动单元的非法复制，IC卡插入式移动单元的IC卡的非法复制，在制造COB设备时，对应于通过协商确定的公共密钥KDCOB相对应的公开密钥KECOB 通信运营商以不可更改的形式存储到ROM中。在制造移动单元时，对应于唯一分配给每个通信运营商的秘密密钥KDCj的KECj是用KDCOB签名加密的。将结果E（KDCOB，KECj）输入到COB设备中写入KECj; COB装置22然后在装运之前组装到移动单元中，移动单元秘密密钥KDMSNi和公开密钥KEMSNi已被存储在该移动单元中。在移动单元的注册中，从通信运营商接收到的E（KDCj，ID）被输入到COB设备22中，从而写入个人信息ID。对于读数，输入KDMSNi以读出ID。

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