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91. 发明授权

US5378920A High breakdown voltage semiconductor device 失效
标题翻译：高击穿电压半导体器件
公开(公告)号：US5378920A
公开(公告)日：1995-01-03
申请号：US85055
申请日：1993-07-02
申请人： Akio Nakagawa , Norio Yasuhara
发明人： Akio Nakagawa , Norio Yasuhara
IPC分类号： H01L21/336 , H01L21/74 , H01L21/762 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/06 , H01L29/40 , H01L29/739 , H01L29/74 , H01L29/745 , H01L29/749 , H01L29/78 , H01L29/786 , H01L29/861
CPC分类号： H01L29/7824 , H01L21/74 , H01L21/76264 , H01L21/76297 , H01L27/0623 , H01L27/0922 , H01L27/1203 , H01L29/404 , H01L29/405 , H01L29/407 , H01L29/408 , H01L29/66772 , H01L29/7394 , H01L29/7436 , H01L29/7455 , H01L29/749 , H01L29/7835 , H01L29/78624 , H01L29/8611 , H01L21/76275 , H01L21/76286 , H01L29/402
摘要： A high breakdown voltage semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first semiconductor region formed on the first insulating film, a second semiconductor region of a first conductivity type having an impurity concentration higher than that of the first semiconductor region and selectively formed on a surface portion of the first semiconductor region, a third semiconductor region having an impurity concentration lower than that of the second semiconductor region and formed on the surface portion of the first semiconductor region so as to be adjacent to or near the second semiconductor region and a fourth semiconductor region of a second conductivity type having an impurity concentration higher than that of the first semiconductor region and formed on the surface portion of the first semiconductor region so as to be outside the third semiconductor region. A fifth semiconductor region having an impurity concentration lower than that of the second or fourth semiconductor region is formed on a bottom portion of the first semiconductor region. When a reverse bias is applied between the second and fourth semiconductor regions, a depletion layer extends vertically in the first semiconductor region and laterally in the fifth semiconductor region. The applied voltage is divided in both the directions and a high breakdown voltage can be obtained.
摘要翻译：高耐压电压半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的第一半导体区域，具有高于第一绝缘膜的杂质浓度的第一导电类型的第二半导体区域第一半导体区域，并且选择性地形成在第一半导体区域的表面部分上，第三半导体区域具有杂质浓度低于第二半导体区域的杂质浓度，并形成在第一半导体区域的表面部分上，以便邻近或在第二半导体区域附近形成杂质浓度高于第一半导体区域的第二导电类型的第四半导体区域，并且形成在第一半导体区域的表面部分上，以便在第三半导体区域的外部。在第一半导体区域的底部形成有杂质浓度低于第二或第四半导体区域的第五半导体区域。当在第二和第四半导体区域之间施加反向偏压时，耗尽层在第一半导体区域中垂直延伸并且在第五半导体区域中横向延伸。施加的电压在两个方向上被分割，并且可以获得高的击穿电压。

92. 发明授权

US5369734A Method for processing and displaying hidden-line graphic images 失效
标题翻译：处理和显示隐藏图形图像的方法
公开(公告)号：US5369734A
公开(公告)日：1994-11-29
申请号：US701084
申请日：1991-05-16
申请人： Yoshie Suzuki , Shin Nakamura , Akio Nakagawa
发明人： Yoshie Suzuki , Shin Nakamura , Akio Nakagawa
IPC分类号： G06T15/40 , G06F15/72
CPC分类号： G06T15/40
摘要： In a graphic display processing method, a surface to be displayed is regarded as an aggregation of rectangular meshes, a painting function of a graphic terminal is performed on mesh strips from the one farthest from a viewpoint to the one closest to the viewpoint, and the meshes are displayed and hidden-line processed to eliminate hidden-lines from the image. The twist state of each mesh and the twist between two adjacent meshes are determined. A plurality of twist-free meshes are painted as a group.
摘要翻译：在图形显示处理方法中，要显示的表面被认为是矩形网格的聚集，对从最靠近视点的网格条到最接近视点的网格条的网格条进行图形终端的绘画功能，网格被显示并进行隐藏处理，以消除图像中的隐藏线。确定每个网格的扭曲状态和两个相邻网格之间的扭曲。多个无捻网格被画成一组。

93. 发明授权

US5343067A High breakdown voltage semiconductor device 失效
标题翻译：高击穿电压半导体器件
公开(公告)号：US5343067A
公开(公告)日：1994-08-30
申请号：US829214
申请日：1992-01-31
申请人： Akio Nakagawa , Norio Yasuhara , Tomoko Matsudai
发明人： Akio Nakagawa , Norio Yasuhara , Tomoko Matsudai
IPC分类号： H01L21/336 , H01L21/74 , H01L21/762 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/06 , H01L29/40 , H01L29/739 , H01L29/74 , H01L29/745 , H01L29/749 , H01L29/78 , H01L29/786 , H01L29/861
CPC分类号： H01L29/404 , H01L21/74 , H01L21/76264 , H01L21/76297 , H01L27/0623 , H01L27/0922 , H01L27/1203 , H01L29/402 , H01L29/405 , H01L29/407 , H01L29/408 , H01L29/66772 , H01L29/7394 , H01L29/7436 , H01L29/7455 , H01L29/749 , H01L29/7824 , H01L29/7835 , H01L29/78624 , H01L29/8611 , H01L21/76275 , H01L21/76286
摘要： A high breakdown voltage semiconductor device comprising a semiconductor substrate an insulating layer formed on the semiconductor substrate, a high resistance semiconductor layer formed on the insulating layer, an isolation region formed in the high resistance semiconductor layer, an element region formed in the high resistance semiconductor layer isolated by the isolation region in a lateral direction, a first low resistance region of a first conductivity type formed in a central surface portion of the element region, and a second low resistance region of a second conductivity type formed in a peripheral surface portion of the element region. Dose of impurities in the element region is set such that a portion of the element region between the first low resistance region and the second low resistance region is completely depleted when voltage is applied between the first and second low resistance regions.
摘要翻译：一种高耐压半导体器件，包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上的高电阻半导体层，形成在高电阻半导体层中的隔离区，形成在高电阻半导体中的元件区在横向方向上被隔离区域隔离的层，形成在元件区域的中心表面部分中的第一导电类型的第一低电阻区域和形成在元件区域的中心表面部分中的第二导电类型的第二低电阻区域，元素区域。元件区域中的杂质的剂量被设定为使得当在第一和第二低电阻区域之间施加电压时，第一低电阻区域和第二低电阻区域之间的元件区域的一部分被完全耗尽。

94. 发明授权

US5272365A Silicon transistor device with silicon-germanium electron gas hetero structure channel 失效
标题翻译：硅晶体管器件采用硅锗电子气异质结构通道
公开(公告)号：US5272365A
公开(公告)日：1993-12-21
申请号：US887667
申请日：1992-05-26
申请人： Akio Nakagawa
发明人： Akio Nakagawa
IPC分类号： H01L21/265 , H01L21/336 , H01L29/165 , H01L29/737 , H01L29/778 , H01L29/78 , H01L29/161 , H01L27/14 , H01L29/205 , H01L29/225
CPC分类号： H01L29/66477 , H01L21/26506 , H01L29/165 , H01L29/7378 , H01L29/7781 , H01L29/7782 , H01L29/78
摘要： A metal oxide semiconductor field effect transistor with heterostructure has a silicon substrate. Heavily-doped source and drain layers which are different in conductivity type from the substrate are spaced apart from each other in the surface portion of the substrate. A gate electrode of polycrystalline silicon is disposed above the substrate, and is electrically insulated from the substrate by a gate insulation layer made of thermal silicon oxide thin film. A silicon germanium layer is laterally provided in a preselected substrate surface section positioned between the source and drain layers. This layer partially overlaps the source and drain layers at both of its end portions, and is thus electrically in contact with these layers. The silicon germanium layer acts as a channel of the transistor.
摘要翻译：具有异质结构的金属氧化物半导体场效应晶体管具有硅衬底。与衬底不同的导电类型的重掺杂源极和漏极层在衬底的表面部分彼此间隔开。多晶硅的栅电极设置在基板上方，并且通过由热氧化硅薄膜制成的栅极绝缘层与基板电绝缘。横向地设置在位于源层和漏层之间的预选的衬底表面部分中的硅锗层。该层在其两端部与源极层和漏极层部分重叠，因此与这些层电接触。硅锗层用作晶体管的沟道。

95. 发明授权

US5133773A Teaching playback swing-phase-controlled above-knee prosthesis 失效
标题翻译：教学回放摆动相控膝上假体
公开(公告)号：US5133773A
公开(公告)日：1992-07-28
申请号：US729682
申请日：1991-07-15
申请人： Seishi Sawamura , Sakuya Nakajima , Kunio Amemori , Hidehisa Oku , Akio Nakagawa , Ichiro Kitayama , Hiromu Matsuda , Katsuhiko Yoshida , Masaru Takeda , Toshio Nakane , Shiro Horiguchi , Shigeru Yuki
发明人： Seishi Sawamura , Sakuya Nakajima , Kunio Amemori , Hidehisa Oku , Akio Nakagawa , Ichiro Kitayama , Hiromu Matsuda , Katsuhiko Yoshida , Masaru Takeda , Toshio Nakane , Shiro Horiguchi , Shigeru Yuki
IPC分类号： A61F2/64 , A61F2/68 , A61F2/70 , A61F2/74
CPC分类号： A61F2/68 , A61F2/64 , A61F2002/6818 , A61F2002/704 , A61F2002/747 , A61F2002/748
摘要： A teaching playback swing-phase-controlled above-knee prosthesis comprises a thigh frame, a leg frame, an air cylinder interconnecting the thigh and leg frames and provided with adjusting means for adjusting the degree of opening the valve of the air cylinder to a plurality of degrees respectively for a plurality of walking speeds selected during trial walking, a mode selecting switch having positions respectively for setting degrees of opening of the valve of the air cylinder in a teaching mode and for a playback mode in which one of the degrees of opening is selected according to an actual walking speed, an opening detector for detecting the degree of opening of the valve of the air cylinder, an opening storage device for storing a plurality of set degreess of opening of the valve of the air cylinder, a phase detector for detecing swing phases and stance phases, walking speed detector for detecting an actual walking speed, and control unit for adjusting the degree of opening of the valve of the air cylinder to one of the set degrees of opening corresponding to the actual walking speed. The teaching playback swing-phase-controlled-above-knee prothesis is capable of automatically controlling the speed of swing motion of the leg frame according to the actual walking speed of the prosthesis wearer.
摘要翻译：示教播放摆动相位控制的膝上假体包括大腿架，腿架，连接大腿和腿框架的气缸，并设置有用于将气缸的阀打开程度调节到多个的调节装置分别用于在试运行期间选择的多个步行速度的模式选择开关，具有分别用于在示教模式下设置气缸的开度的位置的模式选择开关以及其中一个开度根据实际行走速度选择，用于检测气缸的阀的开度的开度检测器，用于存储气缸的阀的多个设定开度的开放存储装置，相位检测器用于检测摆动相位和姿势相位，用于检测实际步行速度的步行速度检测器和用于调节v的开度的控制单元气瓶的一部分与设定的开度相对应的实际行走速度之一。教学回放摆动相位控制上膝盖假体能够根据假体佩戴者的实际步行速度自动控制腿部框架的摆动运动速度。

96. 发明授权

US4866315A Turn-on/off driving technique for insulated gate thyristor 失效
标题翻译：绝缘栅极晶闸管的开/关驱动技术
公开(公告)号：US4866315A
公开(公告)日：1989-09-12
申请号：US161095
申请日：1988-02-26
申请人： Tsuneo Ogura , Akio Nakagawa
发明人： Tsuneo Ogura , Akio Nakagawa
IPC分类号： H01L29/08 , H01L29/10 , H01L29/744 , H01L29/749 , H03K17/732
CPC分类号： H01L29/102 , H01L29/0834 , H01L29/744 , H01L29/749 , H03K17/732
摘要： A turn-on/off driving technique for an insulated gate thyristor which has a first gate electrode insulatively provided above a first base layer and functioning as a gate of MOSFET, and a second gate electrode formed on the second base layer. To drive the turn-on of the thyristor, a first voltage for rendering the MOSFET conductive is applied to the first gate electrode, while substantially simultaneously a second voltage for producing forward biasing between the second base layer and a second emitter layer is applied to the second gate electrode. To turn-off drive the thyristor, a third voltage for reverse biasing between the second emitter layer and the second base layer to stop the operation of the thyristor is applied to the second gate, while the MOSFET is kept conductive. The thyristor starts turning off in response to the voltage application. At this time, charge carriers exhausted from the second emitter layer are allowed to flow into the first base layer through the channel region of the MOSFET, thereby suppressing the local concentration of the turn-off current in the thyristor.

97. 发明授权

US4821083A Thyristor drive system 失效
标题翻译：晶闸管驱动系统
公开(公告)号：US4821083A
公开(公告)日：1989-04-11
申请号：US101790
申请日：1987-09-28
申请人： Tsuneo Ogura , Katsuhiko Takigami , Akio Nakagawa , Tomokazu Domon
发明人： Tsuneo Ogura , Katsuhiko Takigami , Akio Nakagawa , Tomokazu Domon
IPC分类号： H01L29/08 , H01L29/744 , H03K17/00 , H03K17/732
CPC分类号： H01L29/0834 , H01L29/744 , H03K17/732 , H03K2217/0036
摘要： A gate turn-off thyristor drive system with low power loss when it is in the turn-off mode, is disclosed. A first turn-off pulse of a predetermined amplitude is applied to a first gate electrode. A second turn-off pulse is applied to a second gate electrode. An amplitude of the second turn-off pulse is smaller in absolute value than that of the first turn-off pulse. The fall time of the anode current at the time of turn-off is reduced, and the initial value of the tail current of the anode current is reduced. The power loss as the product of the anode voltage and the anode current is reduced.
摘要翻译：公开了一种在关闭模式时具有低功率损耗的栅极截止晶闸管驱动系统。将预定幅度的第一关断脉冲施加到第一栅电极。第二截止脉冲被施加到第二栅电极。第二截止脉冲的幅度的绝对值小于第一截止脉冲的幅度。在关断时的阳极电流的下降时间减少，阳极电流的尾电流的初始值减小。作为阳极电压和阳极电流的乘积的功率损耗减小。

98. 发明授权

US08791690B2 Current sensor, inverter circuit, and semiconductor device having the same 有权
公开(公告)号：US08791690B2
公开(公告)日：2014-07-29
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

99. 发明授权

US08742534B2 Semiconductor device having lateral diode 有权
标题翻译：具有侧向二极管的半导体器件
公开(公告)号：US08742534B2
公开(公告)日：2014-06-03
申请号：US13197719
申请日：2011-08-03
申请人： Takao Yamamoto , Norihito Tokura , Hisato Kato , Akio Nakagawa
发明人： Takao Yamamoto , Norihito Tokura , Hisato Kato , Akio Nakagawa
IPC分类号： H01L29/66 , H01L29/47
CPC分类号： H01L29/868 , H01L27/0664 , H01L29/0615 , H01L29/0692 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.
摘要翻译：具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。第二电极与高杂质浓度部分形成欧姆接触。延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。

100. 发明授权

US08707132B2 Information processing apparatus, information processing method, and storage medium 有权
标题翻译：信息处理装置，信息处理方法和存储介质
公开(公告)号：US08707132B2
公开(公告)日：2014-04-22
申请号：US13175556
申请日：2011-07-01
申请人： Akio Nakagawa , Hisashi Ishikawa
发明人： Akio Nakagawa , Hisashi Ishikawa
IPC分类号： G11C29/00 , G09G5/36 , G09G5/00 , G06F13/00 , H04L12/28 , G06F9/34 , G06F3/00
CPC分类号： G06K15/408 , G06F13/00 , G06K15/40 , G06T1/60 , H04N1/32561 , H04N1/32593 , H04N1/405 , H04N1/4052
摘要： An information processing apparatus comprising: a reception unit adapted to receive a packet containing first data to be stored in a storage unit, a first address indicating an address of second data held in the storage unit, and a second address indicating an address at which the first data is to be written in the storage unit; an access unit adapted to read out the second data from the storage unit based on the first address, and write the first data in the storage unit based on the second address; and a transmission unit adapted to replace the first data of the packet received by the reception unit with the second data read out by the access unit, and transmit the packet.
摘要翻译：一种信息处理装置，包括：接收单元，适于接收包含要存储在存储单元中的第一数据的分组，指示保存在所述存储单元中的第二数据的地址的第一地址，以及指示所述第二地址，第一数据将被写入存储单元; 基于所述第一地址从所述存储单元读出所述第二数据的存取单元，基于所述第二地址将所述第一数据写入所述存储单元; 以及发送单元，其适于将接收单元接收到的分组的第一数据替换为由接入单元读出的第二数据，并发送分组。

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