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    • 91. 发明授权
    • Semiconductor device for performing photoelectric conversion
    • 用于执行光电转换的半导体器件
    • US08022492B2
    • 2011-09-20
    • US11709496
    • 2007-02-22
    • Atsushi IwasakiHiroaki Takasu
    • Atsushi IwasakiHiroaki Takasu
    • H01L27/14
    • H01L27/14689H01L27/1463H01L27/14643
    • A semiconductor device for performing photoelectric conversion has a semiconductor substrate of a first conductivity type and a well region of a second conductivity type different from the first conductivity type and formed in a predetermined region of the semiconductor substrate. A pair of trenches are formed directly adjacent to respective opposite sides of the well region and have widths greater than those of respective depletion layers generated on the respective opposite sides so as to remove junction interfaces on the respective opposite sides. A depth of each trench from a surface of the semiconductor substrate is greater than that of a depletion layer generated on a bottom side of the well region. An insulating layer is buried in each of the trenches.
    • 用于进行光电转换的半导体器件具有第一导电类型的半导体衬底和不同于第一导电类型的第二导电类型的阱区,并且形成在半导体衬底的预定区域中。 一对沟槽直接邻近阱区的相对侧而形成,并且具有大于在各个相对侧上产生的相应耗尽层的宽度的宽度,以便去除相应相对侧上的结界面。 来自半导体衬底的表面的每个沟槽的深度大于在阱区的底侧上产生的耗尽层的深度。 绝缘层被埋在每个沟槽中。
    • 92. 发明授权
    • Image generating apparatus with temperature and feed interval control for fusing section
    • 用于定影部分的温度和进给间隔控制的图像生成装置
    • US07440707B2
    • 2008-10-21
    • US11856986
    • 2007-09-18
    • Atsushi Iwasaki
    • Atsushi Iwasaki
    • G03G15/20
    • G03G15/657G03G15/2039G03G2215/00772
    • An image generating apparatus is provided which can maximize the throughput without causing thermal damage of the fusing components. It determines a sub-thermistor temperature threshold value for switching small size paper feed intervals in response to a sub-thermistor initial temperature. It supplies a heating body with current for heating, and starts feeding recording mediums at the feed interval determined by a feed interval initial value. It makes a successively conveyed paper count. Every time the successively conveyed paper count reaches a paper count threshold value, it performs the switching control of the sub-thermistor temperature threshold value. If the sub-thermistor temperature exceeds the threshold value while the recording medium is passing through the fusing apparatus, it carries out the switching control of the feed intervals. In another mode, it prevents the extension of the paper feed interval of the paper conveyance during a specified paper count α.
    • 提供一种图像产生装置,其可以使得生产量最大化而不引起熔断部件的热损伤。 它决定了一个亚热敏电阻温度阈值,用于响应于亚热敏电阻初始温度切换小尺寸进纸间隔。 它供给具有用于加热的电流的加热体,并且以由进料间隔初始值确定的进料间隔开始进料记录介质。 它连续传送纸张数量。 每次连续传送的纸张计数达到纸张计数阈值时,执行副热敏电阻温度阈值的切换控制。 当记录介质通过定影装置时,如果亚热敏电阻温度超过阈值,则执行进给间隔的切换控制。 在另一种模式下,它可以防止在指定的纸张计数α期间延长纸张输送的送纸间隔。
    • 94. 发明申请
    • Semiconductor device and method of manufacturing semiconductor device
    • 半导体装置及其制造方法
    • US20070200189A1
    • 2007-08-30
    • US11709496
    • 2007-02-22
    • Atsushi IwasakiHiroaki Takasu
    • Atsushi IwasakiHiroaki Takasu
    • H01L27/14
    • H01L27/14689H01L27/1463H01L27/14643
    • Provided is a semiconductor device for performing photoelectric conversion of incident light, including: a p-type substrate (1), an n-type well (2) having a predetermined depth and formed in a predetermined region of the p-type substrate (1), and a depletion layer generated at a junction interface between the p-type substrate (1) and the n-type well (2). In the trenches (22) having a depth larger than that of a depletion layer (K1) generated on a bottom side of the n-type well (2) and a width larger than that of depletion layers (K2, K3) generated on sides of the n-type well (2) are provided so as to remove junction interfaces (J2, J3) on the sides of the n-type well (2), and an insulating layer (21) is buried in the trenches (22).
    • 提供一种用于进行入射光的光电转换的半导体器件,包括:p型衬底(1),具有预定深度并形成在p型衬底(1)的预定区域中的n型阱(2) )和在p型衬底(1)和n型阱(2)之间的结界面处产生的耗尽层。 在沟槽(22)中,其深度大于在n型阱(2)的底侧上产生的耗尽层(K L1)的深度,并且其宽度大于耗尽层的宽度 提供在n型阱(2)的侧面上产生的(K 2 N 3,K 3 N),以便去除接合界面(J 2 (2)的侧面上,并且绝缘层(21)被埋在沟槽(22)中。
    • 95. 发明授权
    • Image generating apparatus
    • 图像生成装置
    • US07218873B2
    • 2007-05-15
    • US10806197
    • 2004-03-23
    • Atsushi IwasakiAkira HayakawaMasaru TsukadaTaro Ishifune
    • Atsushi IwasakiAkira HayakawaMasaru TsukadaTaro Ishifune
    • G03G15/20
    • G03G15/657G03G15/2039G03G2215/00772
    • An image generating apparatus is provided which can maximize the throughput without causing thermal damage of the fusing components. It determines a sub-thermistor temperature threshold value for switching small size paper feed intervals in response to a sub-thermistor initial temperature. It supplies a heating body with current for heating, and starts feeding recording mediums at the feed interval determined by a feed interval initial value. It makes a successively conveyed paper count. Every time the successively conveyed paper count reaches a paper count threshold value, it performs the switching control of the sub-thermistor temperature threshold value. If the sub-thermistor temperature exceeds the threshold value while the recording medium is passing through the fusing apparatus, it carries out the switching control of the feed intervals. In another mode, it prevents the extension of the paper feed interval of the paper conveyance during a specified paper count α.
    • 提供一种图像产生装置,其可以使得生产量最大化而不引起熔断部件的热损伤。 它决定了一个亚热敏电阻温度阈值,用于响应于亚热敏电阻初始温度切换小尺寸进纸间隔。 它供给具有用于加热的电流的加热体,并且以由进料间隔初始值确定的进料间隔开始进料记录介质。 它连续传送纸张数量。 每次连续传送的纸张计数达到纸张计数阈值时,执行副热敏电阻温度阈值的切换控制。 当记录介质通过定影装置时,如果亚热敏电阻温度超过阈值,则执行进给间隔的切换控制。 在另一种模式下,它可以防止在指定的纸张计数α期间延长纸张输送的送纸间隔。
    • 96. 发明申请
    • Mobile communication network system and a mobility managing unit
    • 移动通信网络系统和移动性管理单元
    • US20050201344A1
    • 2005-09-15
    • US11071178
    • 2005-03-04
    • Atsushi IwasakiTakatoshi Okagawa
    • Atsushi IwasakiTakatoshi Okagawa
    • H04L12/753H04L29/06H04W8/08H04W8/12H04W8/22H04W24/00H04W36/12H04W36/38H04W40/34H04W40/36H04W60/00H04W64/00H04W92/00H04W92/24H04Q7/24
    • H04W40/36H04W8/085H04W8/087H04W8/22H04W24/00H04W64/00H04W92/24
    • A mobile communication network system (1) is disclosed. The network system comprises a transport network (30) including a plurality of routers (31), and a network control apparatus (20) for controlling mobility of a mobile node (40, MN1), characterized in that the network control apparatus (20) comprises a mobility managing unit (LRM1) for managing information (CDT) of a correspondent node (41, MN2) communicating with the mobile node (40, MN1); the mobility managing unit (LRM1) comprises a boundary router detecting unit for detecting that the mobile node (MN1) moves and reaches a boundary of a router (AR2) managed by the mobility managing unit (LRM1) itself; and a correspondent node information forwarding unit for forwarding the information (CDT) of the correspondent node (MN2) to a neighbor mobility managing unit (LRM2) having a similar structure, when it is detected that the mobile node (MN1) reaches a boundary of a router (AR2) managed by the mobility managing unit (LRM1) itself.
    • 公开了一种移动通信网络系统(1)。 网络系统包括包括多个路由器(31)的传输网络(30)和用于控制移动节点(40,MN 1)的移动性的网络控制设备(20),其特征在于,所述网络控制设备(20 )包括用于管理与移动节点(40,MN 1)通信的通信节点(41,MN 2)的信息(CDT)的移动性管理单元(LRM 1)。 移动性管理单元(LRM1)包括边界路由器检测单元,用于检测移动节点(MN 1)移动并到达由移动性管理单元(LRM 1)本身管理的路由器(AR 2)的边界; 以及通信节点信息转发单元,用于当检测到移动节点(MN 1)到达时,将相应节点(MN 2)的信息(CDT)转发到具有相似结构的相邻移动性管理单元(LRM 2) 由移动性管理单元(LRM 1)本身管理的路由器(AR 2)的边界。
    • 97. 发明授权
    • Image forming apparatus with overheat preventive device
    • 具有过热预防装置的图像形成装置
    • US06493520B2
    • 2002-12-10
    • US09900045
    • 2001-07-09
    • Atsushi Iwasaki
    • Atsushi Iwasaki
    • G03G1520
    • G03G15/2039G03G15/2042G03G15/6594G03G2215/00472
    • An image forming apparatus includes a heater for heating a recording material for fixing a transferred toner image to the recording material at a transfer portion. A fixing unit includes at least one overheat preventive device for preventing the heater from overheating. Recording material sensors detect the existence of the recording material on a conveyance route or confirm passage of the recording material. A part or all of the at least one overheat preventive device is placed at an area sandwiched between any two planes which arc perpendicular to a conveyance surface of the recording material and are extending parallel in a conveyance direction in passing the recording material sensors
    • 图像形成装置包括加热器,用于加热用于在转印部分将转印的调色剂图像定影到记录材料的记录材料。 定影单元包括至少一个用于防止加热器过热的过热预防装置。 记录材料传感器检测记录材料在输送路径上的存在或确认记录材料的通过。 所述至少一个过热预防装置的一部分或全部放置在夹在垂直于记录材料的输送表面的任何两个平面之间的区域中,并且在传送方向上平行延伸以通过记录材料传感器
    • 100. 发明授权
    • Method of manufacturing single crystal of silicon
    • 制造单晶硅的方法
    • US5882398A
    • 1999-03-16
    • US786340
    • 1997-01-23
    • Susumu SonokawaToshiro HayashiAtsushi IwasakiTomohiko Ohta
    • Susumu SonokawaToshiro HayashiAtsushi IwasakiTomohiko Ohta
    • C30B15/00C30B15/10C30B15/30C30B29/06H01L21/208C30B15/22
    • C30B29/06C30B15/10C30B15/305Y10S117/917
    • A single crystal of silicon is manufactured in accordance with the Czochralski method. A magnetic field is applied to a quartz crucible filled with silicon melt. Subsequently, a single crystal of silicon is pulled in a state in which no magnetic field is applied to the crucible, so as to obtain a single crystal of silicon. Therefore, the inner surface of a quartz crucible becomes very unlikely to deteriorate, and when the inner surface deteriorates, the deteriorated inner surface is restored. Accordingly, it is possible to manufacture a single crystal of silicon having a large diameter without generating a dislocation in the crystal. Moreover, even when a single crystal of silicon having a large diameter is manufactured, a larger number of single crystals of silicon can be manufactured from a single quartz crucible, and the pulling apparatus can be operated over a longer period of time using a single quartz crucible, thereby making it possible to manufacture a longer single crystal.
    • 按照Czochralski法制造单晶硅。 将磁场施加到填充有硅熔体的石英坩埚。 随后,在没有磁场施加到坩埚的状态下拉出单晶硅,从而获得单晶硅。 因此,石英坩埚的内表面变得不太可能劣化,并且当内表面变坏时,内部表面变质。 因此,可以制造具有大直径的单晶硅,而不会在晶体中产生位错。 此外,即使制造具有大直径的单晶硅,可以从单个石英坩埚制造更多数量的单晶硅,并且可以使用单个石英在较长时间内操作拉制装置 坩埚,从而可以制造更长的单晶。