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91. 发明授权

US07244474B2 Chemical vapor deposition plasma process using an ion shower grid 有权
标题翻译：使用离子淋浴网格的化学气相沉积等离子体工艺
公开(公告)号：US07244474B2
公开(公告)日：2007-07-17
申请号：US10873485
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H05H1/03 , H05H1/46 , C23C16/30 , C23C16/34 , C23C16/40
CPC分类号： C23C16/452 , C23C16/402 , C23C16/517
摘要： A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.
摘要翻译：在具有离子喷淋网格的反应室中进行化学气相沉积工艺，该离子喷淋网格将室分成上部离子产生区域和下部工艺区域，离子喷淋格栅具有相对于一个非平行方向取向的多个孔口离子淋浴网格的表面。工件放置在面向离子喷淋格栅的工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。配备气体混合物，其包括沉积前体物质进入离子产生区域，并且处理区域以足以在从离子产生区域到过程区域的离子喷淋网格上产生压降的抽空速率抽真空，由此离子中的压力发生区域至少是过程区域压力的几倍。通过以下步骤沉积所需厚度的一层材料：（a）施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，和（b）将栅格电位施加到离子喷淋栅格以从等离子体中产生离子通过网格并进入过程区域。

92. 发明授权

US06348126B1 Externally excited torroidal plasma source 失效
标题翻译：外部激发环形等离子体源
公开(公告)号：US06348126B1
公开(公告)日：2002-02-19
申请号：US09636699
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece includes a chamber adapted to accept processing gases in an evacuated environment including a workpiece support, a hollow conduit defining a wall of the chamber, and having respective ends opening adjacent opposite sides of the workpiece support, and a chamber wall portion in facing relationship to the workpiece support and defining a workpiece processing zone therebetween, the processing zone and the interior of the conduit forming a torroidal interior path, and an RF energy applicator irradiating gas within the chamber to maintain a plasma within the torroidal interior path.
摘要翻译：一种用于加工工件的等离子体反应器包括适于在真空环境中接受处理气体的室，包括工件支撑件，限定室壁的中空导管，并且具有邻近工件支撑件的相对侧面打开的相应端部，以及室壁部分与工件支撑件形成面对关系并且在它们之间限定工件加工区域，处理区域和管道内部形成环形内部路径，以及RF能量施加器照射室内的气体以将等离子体维持在环形内部路径。

93. 发明授权

US08900405B2 Plasma immersion ion implantation reactor with extended cathode process ring 有权
标题翻译：具有扩展阴极工艺环的等离子体浸没离子注入反应器
公开(公告)号：US08900405B2
公开(公告)日：2014-12-02
申请号：US11985579
申请日：2007-11-14
申请人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
发明人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32412
摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
摘要翻译：本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

94. 发明授权

US07989329B2 Removal of surface dopants from a substrate 有权
标题翻译：从基底去除表面掺杂物
公开(公告)号：US07989329B2
公开(公告)日：2011-08-02
申请号：US11963034
申请日：2007-12-21
申请人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
发明人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
IPC分类号： H01L21/38
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

95. 发明授权

US07967944B2 Method of plasma load impedance tuning by modulation of an unmatched low power RF generator 有权
标题翻译：通过调制不匹配的低功率RF发生器的等离子体负载阻抗调谐方法
公开(公告)号：US07967944B2
公开(公告)日：2011-06-28
申请号：US12129244
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23F1/00
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32146 , H01J37/32174 , H01J37/32935
摘要： A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.
摘要翻译：通过根据在RF源或偏置功率发生器处感测的RF参数确定负载阻抗的变化并将负载阻抗的变化解析成其第一和第二分量，在等离子体反应器室中使用稳定的RF功率来处理工件，并且将稳定化RF功率的功率电平作为负载阻抗变化的组成部分之一变化。

96. 发明申请

US20090297404A1 PLASMA REACTOR WITH HIGH SPEED PLASMA IMPEDANCE TUNING BY MODULATION OF SOURCE POWER OR BIAS POWER 审中-公开
标题翻译：具有高速等离子体阻抗调节的等离子体反应器通过调节源功率或偏置功率
公开(公告)号：US20090297404A1
公开(公告)日：2009-12-03
申请号：US12129202
申请日：2008-05-29
申请人： STEVEN C. SHANNON , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： STEVEN C. SHANNON , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： G05D17/00
CPC分类号： H01J37/32935 , H01J37/32082 , H01J37/32183
摘要： A plasma reactor, having source and bias RF power generators of different frequencies, is provided with a controller responsive to fluctuations in plasma load impedance measured at one of the generators to modulate the output of the other generator to compensate for the fluctuations.
摘要翻译：具有不同频率的源极和偏置RF功率发生器的等离子体反应器设置有响应于在一个发生器处测量的等离子体负载阻抗的波动的控制器，以调制另一发生器的输出以补偿波动。

97. 发明申请

US20090295296A1 METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR 有权
标题翻译：等离子体负载阻抗调制方法通过调制低功率射频发生器
公开(公告)号：US20090295296A1
公开(公告)日：2009-12-03
申请号：US12129244
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： H05H1/00
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32146 , H01J37/32174 , H01J37/32935
摘要： A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.
摘要翻译：通过根据在RF源或偏置功率发生器处感测的RF参数确定负载阻抗的变化并将负载阻抗的变化解析成其第一和第二分量，在等离子体反应器室中使用稳定的RF功率来处理工件，并且将稳定化RF功率的功率电平作为负载阻抗变化的组成部分之一变化。

98. 发明申请

US20090295295A1 PLASMA REACTOR WITH HIGH SPEED PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF DIFFERENT UNMATCHED FREQUENCY SOURCES 有权
标题翻译：具有高速等离子体负载阻抗调节的等离子体反应器通过不同调制频率源的调制
公开(公告)号：US20090295295A1
公开(公告)日：2009-12-03
申请号：US12129155
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： H05H1/00
CPC分类号： H05H1/36 , H01J37/32082 , H01J37/32183 , H01J37/32935 , H05H1/46
摘要： Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.
摘要翻译：等离子体特性如负载阻抗的波动由控制器补偿，该控制器调制耦合到具有适于稳定等离子体特性的频率的等离子体的稳定RF发生器，控制器响应于等离子体特性的波动。

99. 发明申请

US20090140828A1 METHODS AND APPARATUS FOR CONTROLLING CHARACTERISTICS OF A PLASMA 有权
标题翻译：用于控制等离子体特性的方法和装置
公开(公告)号：US20090140828A1
公开(公告)日：2009-06-04
申请号：US11934197
申请日：2007-11-02
申请人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miler , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
发明人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miler , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
IPC分类号： H01P7/04
CPC分类号： H05H1/0081 , H01J37/32091 , H01J37/32174
摘要： Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
摘要翻译：本文提供了用于控制等离子体特性的方法和装置，例如RF功率和等离子体均匀性的空间分布。在一些实施例中，用于控制等离子体特性的装置包括与等离子体电抗器结合使用的谐振器，所述谐振器包括用于接收具有第一频率的RF信号的源谐振器; 与所述源谐振器基本同轴并且至少部分地在所述源谐振器内设置的返回路径谐振器; 以及具有源极谐振器和返回路径谐振器的外部导体，该外部导体与外部导体大致同轴并至少部分地设置，外部导体用于提供RF接地连接。

100. 发明申请

US20090120367A1 Plasma immersion ion implantation reactor with extended cathode process ring 有权
标题翻译：具有扩展阴极工艺环的等离子体浸没离子注入反应器
公开(公告)号：US20090120367A1
公开(公告)日：2009-05-14
申请号：US11985579
申请日：2007-11-14
申请人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
发明人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
IPC分类号： C23C16/513
CPC分类号： H01J37/32642 , H01J37/32412
摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
摘要翻译：本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

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