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91. 发明授权

US06727108B2 APPARATUS AND METHOD FOR OPTICAL EVALUATION, APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF CONTROLLING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 失效
标题翻译：用于光学评估的装置和方法，制造半导体器件的装置和方法，用于制造半导体器件的控制装置的方法和半导体器件
公开(公告)号：US06727108B2
公开(公告)日：2004-04-27
申请号：US10461403
申请日：2003-06-16
申请人： Koji Eriguchi , Takayuki Yamada , Masanori Okuyama
发明人： Koji Eriguchi , Takayuki Yamada , Masanori Okuyama
IPC分类号： H01L2166
CPC分类号： H01L21/3065
摘要： A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.
摘要翻译：晶片的顶表面设置有n型源极区，n型漏极区和n型半导体区。对沉积在晶片上的层间绝缘膜进行使用等离子体的干蚀刻，以形成到达各个区域的开口，然后进行光蚀刻以去除损伤层。在这种情况下，向n型半导体区域间歇地供给激发光。通过在存在和不存在激发光的情况下监测反射的探测光的强度的变化率来检测损坏层的去除进展和新损坏层的显影阶段，导致形成半导体器件具有低和相等的接触电阻。使用光学评估的在线控制使得能够实现具有优异和一致特性的半导体器件。

92. 发明授权

US06709950B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06709950B2
公开(公告)日：2004-03-23
申请号：US09902157
申请日：2001-07-11
申请人： Mizuki Segawa , Isao Miyanaga , Toshiki Yabu , Takashi Nakabayashi , Takashi Uehara , Kyoji Yamashita , Takaaki Ukeda , Masatoshi Arai , Takayuki Yamada , Michikazu Matsumoto
发明人： Mizuki Segawa , Isao Miyanaga , Toshiki Yabu , Takashi Nakabayashi , Takashi Uehara , Kyoji Yamashita , Takaaki Ukeda , Masatoshi Arai , Takayuki Yamada , Michikazu Matsumoto
IPC分类号： H01L29167
CPC分类号： H01L29/6659 , H01L21/76224 , H01L29/665 , H01L2924/0002 , H01L2924/00
摘要： An isolation which is higher in a stepwise manner than an active area of a silicon substrate is formed. On the active area, an FET including a gate oxide film, a gate electrode, a gate protection film, sidewalls and the like is formed. An insulating film is deposited on the entire top surface of the substrate, and a resist film for exposing an area stretching over the active area, a part of the isolation and the gate protection film is formed on the insulating film. There is no need to provide an alignment margin for avoiding interference with the isolation and the like to a region where a connection hole is formed. Since the isolation is higher in a stepwise manner than the active area, the isolation is prevented from being removed by over-etch in the formation of a connection hole to come in contact with a portion where an impurity concentration is low in the active area. In this manner, the integration of a semiconductor device can be improved and an area occupied by the semiconductor device can be decreased without causing degradation of junction voltage resistance and increase of a junction leakage current in the semiconductor device.
摘要翻译：形成了比硅衬底的有源区域更高级的隔离。在有源区域上，形成包括栅极氧化膜，栅电极，栅极保护膜，侧壁等的FET。绝缘膜沉积在基板的整个顶表面上，并且在绝缘膜上形成用于暴露在有源区上延伸的区域，一部分隔离栅极保护膜的抗蚀剂膜。不需要提供用于避免与形成连接孔的区域的隔离等的干涉的取向余量。由于隔离比有源区域以逐步方式更高，所以通过在形成连接孔中的过度蚀刻来防止隔离物与有源区域中杂质浓度低的部分接触。以这种方式，可以改善半导体器件的集成，并且可以降低半导体器件占据的面积，而不会导致半导体器件中的结电阻的劣化和结漏电流的增加。

93. 发明授权

US06492672B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06492672B1
公开(公告)日：2002-12-10
申请号：US09629861
申请日：2000-08-01
申请人： Mizuki Segawa , Toshiki Yabu , Takashi Uehara , Takashi Nakabayashi , Kyoji Yamashita , Takaaki Ukeda , Masatoshi Arai , Takayuki Yamada
发明人： Mizuki Segawa , Toshiki Yabu , Takashi Uehara , Takashi Nakabayashi , Kyoji Yamashita , Takaaki Ukeda , Masatoshi Arai , Takayuki Yamada
IPC分类号： H01L27108
CPC分类号： H01L27/11526 , H01L21/82345 , H01L27/0629 , H01L27/105 , H01L27/11543 , H01L28/40 , Y10S438/957
摘要： A MOS transistor includes a gate oxide film, and a gate electrode which is formed by a lamination of first and second conductor films. A capacitive element includes a lower capacitive electrode formed of the first conductor film, a capacitive film made of an insulating film which is different from the gate oxide film, an upper capacitive electrode formed of the second conductor film on the capacitive film, and a leading electrode of the lower capacitive electrode formed of the second conductor film. At the same number of steps as in the case where the gate oxide film is used as the capacitive film, a semiconductor device can be manufactured with the capacitive film provided, the capacitive film being made of a nitride film or the like that is different from the gate oxide film. Consequently, a capacitive film having a great capacitance value per unit area is used so that the occupied area can be reduced and an increase in manufacturing cost can be controlled. In the semiconductor device in which a transistor, a capacitive element, a resistive film and the like are provided, the occupied area can be reduced and the manufacturing cost can be cut down.
摘要翻译： MOS晶体管包括栅极氧化膜和通过第一和第二导体膜的叠层形成的栅电极。电容元件包括由第一导体膜形成的下部电容电极，由与栅极氧化膜不同的绝缘膜制成的电容膜，由电容膜上的第二导体膜形成的上部电容电极，以及引线电极由第二导电膜形成。以与使用栅极氧化膜作为电容膜的情况相同的步骤，可以制造具有设置的电容膜的半导体器件，电容膜由与氮化物膜不同的氮化物膜等构成栅氧化膜。因此，使用具有每单位面积的大的电容值的电容膜，从而可以减小占用面积并且可以控制制造成本的增加。在其中提供晶体管，电容元件，电阻膜等的半导体器件中，可以减小占用面积并且可以减少制造成本。

94. 发明授权

US06462386B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06462386B2
公开(公告)日：2002-10-08
申请号：US09854468
申请日：2001-05-15
申请人： Masaru Moriwaki , Takayuki Yamada
发明人： Masaru Moriwaki , Takayuki Yamada
IPC分类号： H01L21441
CPC分类号： H01L27/11526 , H01L21/823462 , H01L27/0629 , H01L27/105 , H01L27/11539 , H01L29/66545
摘要： A semiconductor device comprises a first MOSFET and a second MOSFET. The first MOSFET includes a first gate insulating film formed on a semiconductor substrate and having a relatively large thickness and a first gate electrode composed of a polysilicon film formed on the first gate insulating film. The second MOSFET includes a second gate insulating film formed on the semiconductor substrate and having a relatively small thickness and a second gate electrode composed of a metal film made of a refractory metal or a compound of a refractory metal and formed on the second gate insulating film.
摘要翻译：半导体器件包括第一MOSFET和第二MOSFET。第一MOSFET包括形成在半导体衬底上并且具有相对较大厚度的第一栅极绝缘膜和由形成在第一栅极绝缘膜上的多晶硅膜构成的第一栅电极。第二MOSFET包括形成在半导体衬底上并且具有相对较小厚度的第二栅极绝缘膜和由难熔金属或难熔金属化合物制成的金属膜构成的第二栅极，并形成在第二栅极绝缘膜上。

95. 发明授权

US06445047B1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06445047B1
公开(公告)日：2002-09-03
申请号：US09695381
申请日：2000-10-25
申请人： Takayuki Yamada , Masaru Moriwaki
发明人： Takayuki Yamada , Masaru Moriwaki
IPC分类号： H01L2976
CPC分类号： H01L21/82345 , H01L29/495 , H01L29/4966
摘要： A semiconductor device includes: a first-surface-channel-type MOSFET having a first threshold voltage; and a second-surface-channel-type MOSFET with a second threshold voltage having an absolute value greater than an absolute value of said first threshold voltage. The first-surface-channel-type MOSFET includes: a first gate insulating film formed on a semiconductor substrate; and a first gate electrode, which has been formed out of a poly-silicon film over the first gate insulating film. The second-surface-channel-type MOSFET includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode, which has been formed out of a refractory metal film over the second gate insulating film. The refractory metal film is made of a refractory metal or a compound thereof.
摘要翻译：半导体器件包括：具有第一阈值电压的第一表面沟道型MOSFET; 以及具有绝对值大于所述第一阈值电压的绝对值的第二阈值电压的第二表面沟道型MOSFET。第一表面沟道型MOSFET包括：形成在半导体衬底上的第一栅极绝缘膜; 以及在第一栅极绝缘膜上形成的由多晶硅膜形成的第一栅电极。所述第二表面沟道型MOSFET包括：形成在所述半导体衬底上的第二栅极绝缘膜; 以及在所述第二栅极绝缘膜上形成的难熔金属膜之外的第二栅电极。难熔金属膜由难熔金属或其化合物制成。

96. 发明授权

US06432803B1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06432803B1
公开(公告)日：2002-08-13
申请号：US09452460
申请日：1999-12-02
申请人： Takayuki Yamada , Masaru Moriwaki
发明人： Takayuki Yamada , Masaru Moriwaki
IPC分类号： H01L214763
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/2855 , H01L29/66545
摘要： After an insulating film, serving as a gate insulating film, is formed on a semiconductor layer formed on a substrate, a target made of tungsten is sputtered in an ambient of a gas mixture of an argon gas and a nitrogen gas. In the sputtering process, a surface region of the insulating film serving as the gate insulating film is nitrided, while a crystal mixture film composed of a mixture of a tungsten crystal and a tungsten nitride crystal is deposited on the insulating film. The crystal mixture film serves to compose at least a part of a gate electrode.
摘要翻译：在形成在基板上的半导体层上形成用作栅极绝缘膜的绝缘膜之后，在氩气和氮气的气体混合物的环境中溅射由钨制成的靶。在溅射工艺中，将用作栅极绝缘膜的绝缘膜的表面区域氮化，同时将由钨晶体和氮化钨晶体的混合物构成的晶体混合膜沉积在绝缘膜上。晶体混合膜用于构成栅电极的至少一部分。

97. 发明授权

US06281562B1 Semiconductor device which reduces the minimum distance requirements between active areas 失效
标题翻译：降低有效区域之间最小距离要求的半导体器件
公开(公告)号：US06281562B1
公开(公告)日：2001-08-28
申请号：US08685726
申请日：1996-07-24
申请人： Mizuki Segawa , Isao Miyanaga , Toshiki Yabu , Takashi Nakabayashi , Takashi Uehara , Kyoji Yamashita , Takaaki Ukeda , Masatoshi Arai , Takayuki Yamada , Michikazu Matsumoto
发明人： Mizuki Segawa , Isao Miyanaga , Toshiki Yabu , Takashi Nakabayashi , Takashi Uehara , Kyoji Yamashita , Takaaki Ukeda , Masatoshi Arai , Takayuki Yamada , Michikazu Matsumoto
IPC分类号： H01L29167
CPC分类号： H01L29/6659 , H01L21/76224 , H01L29/665 , H01L2924/0002 , H01L2924/00
摘要： An isolation which is higher in a stepwise manner than an active area of a silicon substrate is formed. On the active area, an FET including a gate oxide film, a gate electrode, a gate protection film, sidewalls and the like is formed. An insulating film is deposited on the entire top surface of the substrate, and a resist film for exposing an area stretching over the active area, a part of the isolation and the gate protection film is formed on the insulating film. There is no need to provide an alignment margin for avoiding interference with the isolation and the like to a region where a connection hole is formed. Since the isolation is higher in a stepwise manner than the active area, the isolation is prevented from being removed by over-etch in the formation of a connection hole to come in contact with a portion where an impurity concentration is low in the active area. In this manner, the integration of a semiconductor device can be improved and an area occupied by the semiconductor device can be decreased without causing degradation of junction voltage resistance and increase of a junction leakage current in the semiconductor device.
摘要翻译：形成了比硅衬底的有源区域更高级的隔离。在有源区域上，形成包括栅极氧化膜，栅电极，栅极保护膜，侧壁等的FET。绝缘膜沉积在基板的整个顶表面上，并且在绝缘膜上形成用于暴露在有源区上延伸的区域，一部分隔离栅极保护膜的抗蚀剂膜。不需要提供用于避免与形成连接孔的区域的隔离等的干涉的取向余量。由于隔离比有源区域以逐步方式更高，所以通过在形成连接孔中的过度蚀刻来防止隔离物与有源区域中的杂质浓度低的部分接触。以这种方式，可以改善半导体器件的集成，并且可以降低半导体器件占据的面积，而不会导致半导体器件中的结电阻的劣化和结漏电流的增加。

98. 发明授权

US6117702A Process for making semiconductor photo detector containing crystalline amplification layer 失效
标题翻译：制造含结晶放大层的半导体光电探测器的工艺
公开(公告)号：US6117702A
公开(公告)日：2000-09-12
申请号：US17795
申请日：1998-02-03
申请人： Takeshi Nakamura , Shinya Kyozuka , Takayuki Yamada , Yasuaki Miyamoto
发明人： Takeshi Nakamura , Shinya Kyozuka , Takayuki Yamada , Yasuaki Miyamoto
IPC分类号： H04N1/028 , H01L31/0352 , H01L31/107 , H01L31/18 , H01L31/20 , H01L27/14
CPC分类号： B82Y20/00 , H01L31/035245 , H01L31/107 , H01L31/1075 , H01L31/186 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： Described is a semiconductor photo detector comprising, between a lower electrode and an upper electrode, an optical absorption layer which generates photo carriers, receiving light and an amplification layer which amplifies the photo carriers so generated. In the semiconductor photo detector, the amplification layer is formed of a well layer which causes an avalanche phenomenon and a barrier layer which has a band gap larger than that of the optical absorption layer. The well layer is formed of a crystal substance, by which at the interface with the barrier layer, the energy value of the conduction band of the photo carriers in the well layer is lower than that in the barrier layer and at the same time, the difference in the energy value of the conduction band between the well layer and the barrier layer is larger than the band gap between the valence band and the conduction band of the well layer.
摘要翻译：描述了一种半导体光电检测器，其包括在下电极和上电极之间，产生光载流子的光吸收层，接收光和放大如此产生的光载流子的放大层。在半导体光电检测器中，放大层由导致雪崩现象的阱层和具有比光吸收层的带隙大的带隙的阻挡层形成。阱层由晶体物质形成，在与阻挡层的界面处，阱层中的光载流子的导带的能量值比阻挡层的能量值低，同时，阱层与势垒层之间的导带的能量值的差异大于阱层的价带和导带之间的带隙。

99. 发明授权

US09114489B2 Method of adjusting capacities of combustion chambers of a multi-cylinder engine 有权
标题翻译：调整多缸发动机燃烧室容量的方法
公开(公告)号：US09114489B2
公开(公告)日：2015-08-25
申请号：US13100173
申请日：2011-05-03
申请人： Tsuyoshi Yamamoto , Yasushi Nakahara , Takayuki Yamada , Kazuya Hayashi , Yuichiro Ikeda
发明人： Tsuyoshi Yamamoto , Yasushi Nakahara , Takayuki Yamada , Kazuya Hayashi , Yuichiro Ikeda
IPC分类号： B23P13/00 , B23P13/02 , B23P6/02
CPC分类号： B23P13/02 , B23P6/02 , F02F2200/06 , Y10T29/4927
摘要： This disclosure provides a method of adjusting capacities of combustion chambers of a multi-cylinder engine having a cylinder head with recessed parts that partially form the combustion chambers and a mating surface for mating with a cylinder block, which includes casting a cylinder head material having flat reference surfaces on top of the recessed parts of the cylinder head, machining the cylinder head material to form the mating surface, measuring distances in a height direction from the mating surface to the reference surfaces, respectively, and adjusting machining margins of machining portions of the reference surfaces of the recessed parts based on the measured height direction distances.
摘要翻译：本公开提供了一种调节多缸发动机的燃烧室的容量的方法，所述多缸发动机的气缸盖具有部分地形成燃烧室的凹部和用于与气缸体配合的配合表面，该配合表面包括铸造具有扁平的气缸盖材料参考表面在气缸盖的凹陷部分的顶部上，加工气缸盖材料以形成配合表面，分别测量从配合表面到参考表面的高度方向上的距离，并且调整加工部分的加工余量基于所测量的高度方向距离，凹进部分的参考表面。

100. 发明授权

US08972151B2 Two-cycle engine 有权
标题翻译：双循环发动机
公开(公告)号：US08972151B2
公开(公告)日：2015-03-03
申请号：US13813434
申请日：2011-08-04
申请人： Takayuki Hirose , Takeshi Yamada , Yasunori Ashikaga , Takayuki Yamada , Takahiro Kuge , Takahiro Takimoto , Mamoru Nomura
发明人： Takayuki Hirose , Takeshi Yamada , Yasunori Ashikaga , Takayuki Yamada , Takahiro Kuge , Takahiro Takimoto , Mamoru Nomura
IPC分类号： F02B25/04 , F02M51/06 , F02D19/10 , F02M21/02 , F02D19/06
CPC分类号： F02M51/06 , F02B25/04 , F02D19/061 , F02D19/0689 , F02D19/0692 , F02D19/10 , F02M21/0212 , F02M21/0275 , Y02T10/32 , Y02T10/36
摘要： Disclosed herein is a two-cycle engine that includes an exhaust port which is opened and closed at one end portion in a longitudinal direction of a cylinder; a scavenging port which is opened and closed at the other end portion in the longitudinal direction of the cylinder; and a fuel injection port which injects a fuel into the cylinder provided between the exhaust port and the scavenging port, wherein the fuel begins to be injected in a state in which at least any one of the exhaust port and the scavenging port is opened.
摘要翻译：这里公开了一种双冲程发动机，其包括在气缸的纵向方向上的一个端部处打开和关闭的排气口; 在气缸的长度方向的另一端部开闭的清扫口; 以及燃料喷射口，其将燃料喷射到设置在排气口和扫气口之间的气缸中，其中燃料开始以排气口和扫气口中的至少任一个打开的状态喷射。

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