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91. 发明申请

US20110203773A1 COOLING MEMBER, MANUFACTURING METHOD AND APPARATUS THEREOF 审中-公开
标题翻译：冷却部件，制造方法及装置
公开(公告)号：US20110203773A1
公开(公告)日：2011-08-25
申请号：US13127158
申请日：2009-11-02
申请人： Junichi Teraki , Mitsuhiro Tanaka , Noriyuki Okuda
发明人： Junichi Teraki , Mitsuhiro Tanaka , Noriyuki Okuda
IPC分类号： F28D15/00 , B23P15/26
CPC分类号： H05K7/20254 , F28D15/0233 , F28D15/0275 , F28F3/12 , H01L23/473 , H01L2924/0002 , H05K7/209 , Y10T29/49359 , Y10T29/53113 , H01L2924/00
摘要： A cooling member includes a heat-transfer member having a groove and a refrigerant introducing pipe pressed into the groove. The refrigerant introducing pipe has a pressed region positioned inwardly of the edge of the heat-transfer member, and at least one curbed surface portion. A method for manufacturing a cooling member includes preparing a punch having at least one curved corner and a pressing surface, positioning the corner, and moving the punch closer to the groove to press the refrigerant introducing pipe into the groove with the pressing surface. A device for manufacturing a cooling member includes the punch and a support configured to support the heat-transfer member so the groove is positioned opposite the punch.
摘要翻译：冷却构件包括具有凹槽的传热构件和压入槽中的制冷剂引入管。制冷剂导入管具有位于传热构件的边缘的内侧的压制区域和至少一个弯曲表面部分。制造冷却构件的方法包括：制备具有至少一个弯曲角和冲压表面的冲头，定位角部，并且使冲头移动到更靠近凹槽的位置，以将压制表面压入制冷剂导入管。用于制造冷却构件的装置包括冲头和构造成支撑传热构件的支撑件，使得凹槽与冲头相对定位。

92. 发明申请

US20110024796A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，半导体器件和用于生产用于半导体器件的外延衬底的工艺
公开(公告)号：US20110024796A1
公开(公告)日：2011-02-03
申请号：US12884516
申请日：2010-09-17
申请人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L21/0262 , C30B19/00 , C30B23/02 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02378 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/201 , H01L29/7786
摘要： Provided is an epitaxial substrate having excellent two-dimensional electron gas characteristics and reduced internal stress due to strains. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by five straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride.
摘要翻译：提供了具有优异的二维电子气特性和由于应变引起的内部应力降低的外延基板。沟道层由Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）表示的第一III族氮化物形成，以使得其组成在由x1 = 0和0＆lt; 1lE; y1＆nlE; 0.3确定的范围内。阻挡层由Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）表示的第二III族氮化物形成，以具有以InN，AlN和GaN为顶点的三元相图中的组成，包围在五个根据第一III族氮化物的组成（AlN摩尔分数）确定的直线。

93. 发明申请

US20100289029A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，半导体器件及制造用于半导体器件的外延衬底的方法
公开(公告)号：US20100289029A1
公开(公告)日：2010-11-18
申请号：US12767041
申请日：2010-04-26
申请人： Mikiya ICHIMURA , Makoto Miyoshi , Mitsuhiro Tanaka
发明人： Mikiya ICHIMURA , Makoto Miyoshi , Mitsuhiro Tanaka
IPC分类号： H01L29/20 , H01L21/784 , H01L27/12
CPC分类号： C30B25/02 , C30B19/00 , C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7786
摘要： An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with AlN. A barrier layer is formed on the spacer layer with group III nitride having a composition of InXAlyGazN (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, AlN, and GaN as vertexes.
摘要翻译：在本发明中提供了具有优选的二维电子气特性和接触特性的外延基板。在GaN衬底上形成沟道层。在AlN的沟道层上形成间隔层。在间隔层上形成阻挡层，其中III族氮化物具有InXAlyGazN（其中x + y + z = 1）的组成，并且至少包括In，Al和Ga，使得阻挡层的组成在用根据三元相图上的组成定义的四条线以InN，AlN和GaN为顶点包围。

94. 发明申请

US20100072493A1 ACTIVE MATRIX SUBSTRATE 有权
标题翻译：主动矩阵基板
公开(公告)号：US20100072493A1
公开(公告)日：2010-03-25
申请号：US12442870
申请日：2007-09-25
申请人： Tadayoshi Miyamoto , Mitsuhiro Tanaka
发明人： Tadayoshi Miyamoto , Mitsuhiro Tanaka
IPC分类号： H01L33/00 , H01L21/8232
CPC分类号： H01L27/124 , G02F1/136204
摘要： In an active matrix substrate (100) of the present invention, a gate bus line (105) and a gate electrode (166) extend in the first direction (the x direction). At a contact portion (168) for electrically connecting the gate bus line (105) with the drain regions of a first-conductivity-type transistor section (162) and a second-conductivity-type transistor section (164), the direction of the straight line (L1) of the shortest distance (d1) between one of a plurality of first-conductivity-type drain connecting portions (168c) that is closest to the gate bus line (105) and the gate bus line (105) is inclined with respect to the second direction (the y direction).
摘要翻译：在本发明的有源矩阵基板（100）中，栅极总线（105）和栅电极（166）沿第一方向（x方向）延伸。在用于将栅极总线（105）与第一导电型晶体管部分（162）和第二导电型晶体管部分（164）的漏极区域电连接的接触部分（168）处，与栅极总线（105）最接近的多个第一导电型漏极连接部（168c）中的一个与栅极总线（105）之间的最短距离（d1）的直线（L1）倾斜相对于第二方向（y方向）。

95. 发明授权

US07612448B2 Power module having a cooling device and semiconductor devices mounted on a resin substrate, method of producing same, and air conditioner 有权
标题翻译：具有冷却装置和安装在树脂基板上的半导体装置的功率模块，其制造方法和空调
公开(公告)号：US07612448B2
公开(公告)日：2009-11-03
申请号：US11791844
申请日：2005-12-01
申请人： Junichi Teraki , Mitsuhiro Tanaka
发明人： Junichi Teraki , Mitsuhiro Tanaka
IPC分类号： H01L31/111 , H01L25/07 , H01L25/16 , H05K1/02 , H05K7/14 , H05K7/20
CPC分类号： H01L25/072 , H01L23/3677 , H01L23/473 , H01L24/48 , H01L25/162 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/16195 , H01L2924/181 , H01L2924/19041 , H05K1/0206 , H05K1/021 , H05K1/0272 , H05K1/0298 , H05K1/183 , H05K3/0061 , H05K7/20927 , H05K2201/064 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power module includes a power semiconductor, a non-power semiconductor, one resin substrate, and a cooling device. The power semiconductor and the non-power semiconductor configure a power supply circuit for performing power conversion. Both the power semiconductor and the non-power semiconductor are mounted on the resin substrate. The cooling device is disposed in order to cool the power semiconductor.
摘要翻译：功率模块包括功率半导体，非功率半导体，一个树脂基板和冷却装置。功率半导体和非功率半导体构成用于进行电力转换的电源电路。功率半导体和非功率半导体都安装在树脂基板上。设置冷却装置以冷却功率半导体。

96. 发明申请

US20090050938A1 MIS GATE STRUCTURE TYPE HEMT DEVICE AND METHOD OF FABRICATING MIS GATE STRUCTURE TYPE HEMT DEVICE 失效
标题翻译：门控结构类型HEMT器件和制造MIS门结构类型HEMT器件的方法
公开(公告)号：US20090050938A1
公开(公告)日：2009-02-26
申请号：US12185152
申请日：2008-08-04
申请人： Makoto Miyoshi , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Mitsuhiro Tanaka
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/7787 , H01L29/1033 , H01L29/1066 , H01L29/2003 , H01L29/4232 , H01L29/517 , H01L29/66462
摘要： A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion, that is, between a drain and a gate and between a gate and a source is sufficiently lowered, and at the same time, a P-type region is formed immediately under the gate. This realizes a normally-off type HEMT device having a low on-resistance. Further, when a film thickness of an insulating layer is defined as t (nm) and a relative permittivity of a substance forming the insulating layer is defined as k, a threshold voltage as high as +3 V or more can be attained by satisfying k/t≦0.85 (nm−1).
摘要翻译：能够实现特性优异的常闭型HEMT装置。二维电子气体区域形成在基底层和势垒层的异质结界面的周围，使得入射部分，即在漏极和栅极之间以及栅极和源极充分降低，同时在栅极的正下方形成P型区域。这实现了具有低导通电阻的常闭型HEMT装置。此外，当将绝缘层的膜厚定义为t（nm），并且形成绝缘层的物质的相对介电常数定义为k时，可以通过满足k值来获得高达+3V或更高的阈值电压 /t<=0.85（nm-1）。

97. 发明授权

US07438761B2 Apparatus for fabricating a III-V nitride film and a method for fabricating the same 失效
标题翻译：用于制造III-V族氮化物膜的设备及其制造方法
公开(公告)号：US07438761B2
公开(公告)日：2008-10-21
申请号：US11324940
申请日：2006-01-04
申请人： Tomohiko Shibata , Keiichiro Asai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Keiichiro Asai , Mitsuhiro Tanaka
IPC分类号： C30B25/02 , C30B25/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1008
摘要： A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.
摘要翻译：将氯化氢气体和氨气与载气一起引入反应器中，在反应器中通过导管将基底和至少一种铝金属材料。然后，通过加热器加热氢气和氨气，因此，使用氢化物气相外延法在基板上外延生长至少包含Al元素的III-V族氮化物膜。整个反应器由氮化铝材料制成，其不会遭受铝金属材料与氯化氢气体的反应产生的氯化铝气体的腐蚀。

98. 发明授权

US07317501B2 Optical film, light reflective film, liquid crystal display panel, method and apparatus for producing an optical film, method of producing a die roller, and method and apparatus for laminating an optical film 有权
标题翻译：光学膜，光反射膜，液晶显示面板，光学膜的制造方法和装置，模具辊的制造方法以及用于层压光学膜的方法和装置
公开(公告)号：US07317501B2
公开(公告)日：2008-01-08
申请号：US09841666
申请日：2001-04-24
申请人： Mitsuhiro Tanaka , Yuji Saai
发明人： Mitsuhiro Tanaka , Yuji Saai
IPC分类号： G02F1/133 , B32B3/00 , B31F1/20
CPC分类号： G02B5/08 , G02F1/133553 , Y10T428/24612
摘要： An object of the invention is to provide a light reflective film which can prevent moire fringes from occurring. A rough face in which a plurality of rows of pyramidal convex portions that are linearly continuous are adjacently formed in parallel with one another is formed on one face of a die film. The rows of convex portions that are linearly continuous are inclined at a predetermined angle with respect to an edge of the die film. An optical film is produced by transferring the die film. A light reflective film is produced by vapor-depositing a light reflection film on the optical film. In a liquid crystal display panel having the light reflective film, the pitch of occurring moire fringes becomes so small that the moire fringes cannot be visually seen, and moire fringes can be prevented from occurring.
摘要翻译：本发明的目的是提供一种能够防止发生莫尔条纹的光反射膜。在模膜的一个面上形成有多个直线连续的多列锥形凸部相互平行地形成的粗糙面。线状连续的各列的凸部相对于模膜的边缘以规定的角度倾斜。通过转移模片来制造光学膜。通过在光学膜上气相沉积光反射膜来制造光反射膜。在具有光反射膜的液晶显示面板中，出现的莫尔条纹的间距变得如此之小，使得无法在视觉上看到莫尔条纹，并且可以防止产生莫尔条纹。

99. 发明授权

US06943366B2 Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method 有权
标题翻译：半导体发光元件用基板，半导体发光元件及半导体发光元件制造方法
公开(公告)号：US06943366B2
公开(公告)日：2005-09-13
申请号：US10813565
申请日：2004-03-30
申请人： Yuji Hori , Osamu Oda , Mitsuhiro Tanaka , Bruno Daudin , Eva Monroy
发明人： Yuji Hori , Osamu Oda , Mitsuhiro Tanaka , Bruno Daudin , Eva Monroy
IPC分类号： C23C14/06 , C23C16/34 , H01L21/205 , H01L33/00 , H01L33/06 , H01L33/32 , H01L29/06 , H01L31/109 , H01L31/336 , H01L31/72
CPC分类号： H01L33/325 , B82Y20/00 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/007 , H01L33/06
摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.
摘要翻译：包含至少Al的III族氮化物底层，其位错密度为<= 1×10 11 / cm 2，和（002）面X射线摇摆曲线半宽在集合的基材上形成<= 200秒的值。在III族氮化物底层上方形成p型半导体层组，并且包括III族氮化物，其中Ga含量相对于总III族元素> 50％，载流子密度> 1×10 ^{16/3/3 3。在p型半导体层组上形成发光层，并且包含多个相互隔离的岛状晶体。在发光层上形成n型半导体层组，并且包含相对于> = 50％的总III族元素的Ga含量。}

100. 发明申请

US20050009221A1 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method 有权
标题翻译：用于制造包括通过该方法制造的高电阻率GaN层和外延衬底的氮化物膜的方法
公开(公告)号：US20050009221A1
公开(公告)日：2005-01-13
申请号：US10873767
申请日：2004-06-22
申请人： Makoto Miyoshi , Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa , Hiroyasu Ishikawa
发明人： Makoto Miyoshi , Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa , Hiroyasu Ishikawa
IPC分类号： C30B29/38 , C23C16/34 , C30B25/02 , C30B29/40 , H01L21/00 , H01L21/20 , H01L21/205
CPC分类号： C30B29/40 , C30B25/02 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.
摘要翻译：制造包括高电阻率GaN层的氮化物膜的方法包括以下步骤：允许含有有机金属化合物的III族源气体，含有氨的V族气体，用于III族源气体的载气，并且用于V族源气体的载气在保持在1000℃或更高的预定单晶晶片上流动，并且还包括在单晶晶片上外延生长包括GaN层的氮化物膜的步骤源气体的气相反应。在反应进行之前，至少一种载气含有氮，同时晶片温度升高。至少一种载气含有氢和氮，并且在外延生长步骤的至少一部分中，总氢和氮的总含量为90体积％以上。

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