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91. 发明申请

US20090181526A1 Plasma Doping Method and Apparatus 审中-公开
标题翻译：等离子体掺杂法和装置
公开(公告)号：US20090181526A1
公开(公告)日：2009-07-16
申请号：US11887381
申请日：2006-03-30
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
IPC分类号： H01L21/22 , C23C16/00
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/3244 , H01J37/32834 , H01J2237/3342
摘要： An object of the invention is to provide a plasma doping method and a plasma doping apparatus in which uniformity of concentration of impurities introduced into a sample surface are excellent.The plasma doping apparatus of the invention introduces a predetermined mass flow of gas from a gas supply device (2) into a vacuum chamber (1) while discharging the gas through an exhaust port (11) by a turbo-molecular pump (3), which is an exhaust device in order to maintain the vacuum chamber (1) under a predetermined pressure by a pressure adjusting valve (4). A high-frequency power source (5) supplies high-frequency power of 13.56 MHz to a coil (8) disposed in the vicinity of a dielectric window (7) opposite a sample electrode (6) in order to generate an inductively coupled plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying high-frequency power to the sample electrode (6) is provided. A sum of an area of an opening of a gas flow-off port (15) opposed to a center portion of the sample electrode (6) is configured to be smaller than that of an area of an opening of the gas flow-off port (15) opposed to a peripheral portion of the sample electrode (6) in order to improve the uniformity.
摘要翻译：本发明的目的是提供一种等离子体掺杂方法和等离子体掺杂装置，其中引入样品表面的杂质的浓度均匀。本发明的等离子体掺杂装置通过涡轮分子泵（3）将气体从气体供给装置（2）引入真空室（1），同时通过排气口排出气体，其是为了通过压力调节阀（4）将真空室（1）保持在预定压力下的排气装置。高频电源（5）向布置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8）提供13.56MHz的高频功率，以便产生电感耦合等离子体真空室（1）。提供了一种用于向样品电极（6）提供高频电力的高频电源（10）。与样品电极（6）的中心部分相对的气体流出口（15）的开口面积的总和被构造成小于气体流出口的开口面积的面积（15）与样品电极（6）的周边部分相对，以提高均匀性。

92. 发明申请

US20090176355A1 Plasma Doping Method and Plasma Processing Device 失效
标题翻译：等离子体掺杂法和等离子体处理装置
公开(公告)号：US20090176355A1
公开(公告)日：2009-07-09
申请号：US11887323
申请日：2006-03-29
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
IPC分类号： H01L21/425 , C23C16/513
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J37/32458 , H01J37/32623 , H01J37/32633
摘要： An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample.In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).
摘要翻译：本发明的目的是提供一种等离子体掺杂方法，该等离子体掺杂方法在引入样品表面的杂质的浓度均匀性和等离子体处理装置中均匀地进行等离子体处理。在根据本发明的等离子体掺杂装置中，在从气体供给装置（2）引入预定气体的同时，通过排气口11，用作为排气装置的涡轮分子泵（3）将真空室（1）抽真空），以便通过压力调节阀（4）将真空室（1）的内部保持在预定压力。高频电源（5）将13.56MHz的高频功率提供给设置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8），以产生电感耦合真空室（1）中的等离子体。提供了用于向样品电极（6）提供高频电力的高频电源（10）。通过驱动闸门（18）并覆盖通过门（16）来增强处理的均匀性。

93. 发明授权

US07456085B2 Method for introducing impurities 失效
标题翻译：引入杂质的方法
公开(公告)号：US07456085B2
公开(公告)日：2008-11-25
申请号：US10597716
申请日：2005-02-04
申请人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
发明人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236
摘要： To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus.At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.
摘要翻译：为了提供可以重复进行等离子体放电以实现非晶态和等离子体掺杂的方法，在步骤简单且易于投入的情况下，不会破坏装置的方法。在用于等离子体等离子体掺杂的等离子体照射中使用的等离子体切换时，停止放电，并且复位高频电源和外围电路的匹配点的初始状态，以适应对于每个步骤中使用的等离子体，或者在切换时，通过增加压力和降低偏置电压来减小施加到高频电源等的负载。

94. 发明申请

US20070037367A1 Apparatus for plasma doping 有权
标题翻译：等离子体掺杂装置
公开(公告)号：US20070037367A1
公开(公告)日：2007-02-15
申请号：US11585938
申请日：2006-10-25
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
IPC分类号： H05H1/24 , H01L21/04
CPC分类号： H01J37/32412 , C23C8/36 , C23C14/48 , H01J37/32467 , H01L21/2236 , H05H1/46
摘要： A doping device is provided having a vacuum container defining a chamber therein. The container has a portion made of dielectric material and bears an impurity to be doped in a substrate provided in the chamber. Also provided is a plasma source for generating a plasma in the chamber by forming an electric field through the portion of the container, such that ion in the plasma impinges against the portion of the container, feeding the impurity out of the portion of the container into the chamber.
摘要翻译：提供一种具有在其中限定室的真空容器的掺杂装置。容器具有由电介质材料制成的部分，并且在设置在腔室中的衬底中掺杂杂质。还提供了一种用于通过在容器的一部分形成电场来产生等离子体的等离子体源，使得等离子体中的离子撞击容器的部分，将杂质从容器的一部分供给到房间。

95. 发明申请

US20060049140A1 Method and apparatus for liquid etching 失效
标题翻译：液体蚀刻的方法和装置
公开(公告)号：US20060049140A1
公开(公告)日：2006-03-09
申请号：US10546015
申请日：2004-02-23
申请人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hisataka Kanada
发明人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hisataka Kanada
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： H01L21/31144 , H01L21/31111 , H01L21/32134 , H01L21/32139 , H01L21/6708
摘要： A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.
摘要翻译：一种液相蚀刻方法，其包括将特定速度的化学反应性液体喷涂到固体制品，待处理的固体制品或凝胶状材料的聚集体; 以及具有用于保持待处理物体的机构的液体蚀刻装置和用于将化学反应性液体喷射到由机构保持的待处理物体的喷嘴结构。该方法和装置允许在保持蚀刻精度的同时显着提高蚀刻速率。

96. 发明授权

US06784080B2 Method of manufacturing semiconductor device by sputter doping 失效
标题翻译：通过溅射掺杂制造半导体器件的方法
公开(公告)号：US06784080B2
公开(公告)日：2004-08-31
申请号：US09840306
申请日：2001-04-24
申请人： Bunji Mizuno , Hiroaki Nakaoka , Michihiko Takase , Ichiro Nakayama
发明人： Bunji Mizuno , Hiroaki Nakaoka , Michihiko Takase , Ichiro Nakayama
IPC分类号： H01L2104
CPC分类号： H01L29/66106 , H01J37/32082 , H01J37/32192 , H01J37/32412 , H01J37/32678 , H01L21/2236
摘要： A semiconductor substrate and an impurity solid that comprises of impurity to be introduced to a diode formation region are held in a vacuum chamber. Inert or reactive gas is introduced into the vacuum chamber to generate plasma composed of the inert or reactive gas. A first voltage allowing the impurity solid to serve as a cathode for the plasma is applied to the said impurity solid and the said impurity solid is sputtered by ions in the plasma, thereby mixing the impurity within the said impurity solid into the plasma. A second voltage allowing a semiconductor substrate to serve as a cathode for the plasma is applied to the said semiconductor substrate, thereby directly introducing the impurity within the plasma to the surface portion of the diode formation region of the said semiconductor substrate, generating a impurity layer.
摘要翻译：将包含待引入到二极管形成区域的杂质的半导体衬底和杂质固体保持在真空室中。将惰性或反应性气体引入真空室以产生由惰性或反应性气体组成的等离子体。将杂质固体用作等离子体的阴极的第一电压施加到所述杂质固体上，并且所述杂质固体被等离子体中的离子溅射，从而将所述杂质固体内的杂质混合到等离子体中。将半导体衬底用作等离子体的阴极的第二电压被施加到所述半导体衬底，从而将等离子体内的杂质直接引入到所述半导体衬底的二极管形成区域的表面部分，产生杂质层。

97. 发明授权

US06030667A Apparatus and method for applying RF power apparatus and method for generating plasma and apparatus and method for processing with plasma 失效
标题翻译：用于施加RF电力装置的装置和方法以及用于产生等离子体的方法以及用等离子体处理的装置和方法
公开(公告)号：US06030667A
公开(公告)日：2000-02-29
申请号：US996705
申请日：1997-12-24
申请人： Hideo Nakagawa , Shigenori Hayashi , Ichiro Nakayama , Tomohiro Okumura
发明人： Hideo Nakagawa , Shigenori Hayashi , Ichiro Nakayama , Tomohiro Okumura
IPC分类号： H01J37/32 , H03H7/38 , H05H1/46 , H05H1/24 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32706 , H03H7/38 , H05H1/46
摘要： On the bottom of a chamber, there is provided a lower electrode for supporting an object to be processed with intervention of an insulator. A first RF power source applies RF power to a multiple spiral coil composed of four spiral coil elements connected in parallel via an impedance matcher. The length of each of the coil elements corresponds to 1/4 of the wavelength of the RF power supplied from the first RF power source. A second RF power source applies an RF bias voltage to the lower electrode.
摘要翻译：在室的底部，设置有用于通过绝缘体介入来支撑待处理物体的下电极。第一RF电源将RF功率施加到由经由阻抗匹配器并联连接的四个螺旋线圈元件组成的多个螺旋线圈。每个线圈元件的长度对应于从第一RF电源提供的RF功率的波长的+ E，fra 1/4 + EE。第二RF电源向下电极施加RF偏置电压。

98. 发明授权

US5711850A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5711850A
公开(公告)日：1998-01-27
申请号：US651606
申请日：1996-05-22
申请人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H05H1/46 , C23C16/50 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/507
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable. Plasma is generated inside the vacuum vessel upon application of a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
摘要翻译：等离子体处理装置包括真空容器，基板电极，部分或全部具有多个螺旋或螺旋构造的放电线圈，高频电源以及通过连接到放电线圈的匹配电路的导线，并通过连接电缆连接到高频电源。在向放电线圈施加高频电压的同时，在真空容器内产生等离子体，以处理设置在基板电极上的基板。

99. 发明授权

US5609690A Vacuum plasma processing apparatus and method 失效
标题翻译：真空等离子体处理装置及方法
公开(公告)号：US5609690A
公开(公告)日：1997-03-11
申请号：US389229
申请日：1995-02-15
申请人： Syouzou Watanabe , Masaki Suzuki , Ichiro Nakayama , Tomohiro Okumura
发明人： Syouzou Watanabe , Masaki Suzuki , Ichiro Nakayama , Tomohiro Okumura
IPC分类号： H05H1/16 , C23C14/40 , C23C16/509 , C23F4/04 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32165 , H01J37/32568
摘要： A vacuum plasma processing apparatus includes a vacuum processing container accommodating a to-be-processed substrate, a feeding device for feeding a reaction gas to the container, a vacuumizing device for discharging a gas in the container therefrom, a susceptor for holding the to-be-processed substrate arranged in the container, split electrodes arranged in a deltaic lattice at a wall surface of the container facing the to-be-processed substrate, and a power source unit for impressing to the slit electrodes three-phase RF powers having three phases different from each other. When the electrodes are arranged in an orthogonal lattice at the wall surface of the continuer, the power source unit impresses thereto two-phase RF powers having two phases different from each other.
摘要翻译：一种真空等离子体处理装置，包括容纳被处理基板的真空处理容器，将反应气体供给到容器的供给装置，将容器内的气体排出的抽真空装置，布置在容器中的被处理衬底，在面向待处理衬底的容器的壁表面上以三角形格架排列的分裂电极，以及用于向狭缝电极施加三相RF电力的电源单元，其具有三个相位彼此不同。当电极在连续体的壁面上以正交格架布置时，电源单元向其施加具有彼此不同的两相的两相RF功率。

100. 发明授权

US5558722A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5558722A
公开(公告)日：1996-09-24
申请号：US528164
申请日：1995-09-14
申请人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H05H1/46 , C23C16/50 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/507
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
摘要翻译：等离子体处理装置包括真空容器，基板电极，部分或全部具有多个螺旋或螺旋构造的放电线圈，高频电源以及通过连接到放电线圈的匹配电路并且经由连接电缆与高频电源连接，通过向放电线圈施加高频电压，对真空容器内产生等离子体，以处理设置在基板电极上的基板。

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