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1. 发明授权

US5922223A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5922223A
公开(公告)日：1999-07-13
申请号：US749847
申请日：1996-11-15
申请人： Tomohiro Okumura , Hideo Haraguchi , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Hideo Haraguchi , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32522 , H01J37/321
摘要： A plasma processing method and apparatus, wherein evaluation is effected while a suitable gas is introduced into a vacuum vessel, and then a high frequency voltage is applied by a high frequency discharge coil power source to a spiral discharge coil while the interior of the vacuum vessel is kept under adequate pressure, whereby a high frequency magnetic field is generated within the vacuum vessel through a dielectric plate so that electrons are accelerated by an induction field due to the high frequency magnetic field to generate plasma within the vacuum vessel for processing a substrate, characterized in that the dielectric plate is heated by a planar heater to 80.degree. C. or more, whereby the thickness of a thin film to be deposited on the dielectric plate is substantially reduced thereby to inhibit dust generation and thus substantially reduce the frequency of maintenance required for the dielectric plate. The apparatus includes a ceramic plate formed with a discharge coil fixing groove and mounted on the dielectric plate, and the planar spiral discharge coil is mounted on the ceramic plate.
摘要翻译：一种等离子体处理方法和装置，其中在合适的气体被引入真空容器中时进行评价，然后通过高频放电线圈电源将高频电压施加到螺旋放电线圈，同时真空容器的内部保持在足够的压力下，由此通过电介质板在真空容器内产生高频磁场，使得由于高频磁场而通过感应场加速电子，以在真空容器内产生用于处理衬底的等离子体，其特征在于，通过平面加热器将电介质板加热至80℃以上，由此沉积在电介质板上的薄膜的厚度大大降低，从而抑制灰尘产生，从而显着降低维护频率电介质板所需的。该装置包括形成有放电线圈固定槽并安装在电介质板上的陶瓷板，并且平面螺旋放电线圈安装在陶瓷板上。

2. 发明授权

US5711850A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5711850A
公开(公告)日：1998-01-27
申请号：US651606
申请日：1996-05-22
申请人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H05H1/46 , C23C16/50 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/507
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable. Plasma is generated inside the vacuum vessel upon application of a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
摘要翻译：等离子体处理装置包括真空容器，基板电极，部分或全部具有多个螺旋或螺旋构造的放电线圈，高频电源以及通过连接到放电线圈的匹配电路的导线，并通过连接电缆连接到高频电源。在向放电线圈施加高频电压的同时，在真空容器内产生等离子体，以处理设置在基板电极上的基板。

3. 发明授权

US5558722A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5558722A
公开(公告)日：1996-09-24
申请号：US528164
申请日：1995-09-14
申请人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H05H1/46 , C23C16/50 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/507
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
摘要翻译：等离子体处理装置包括真空容器，基板电极，部分或全部具有多个螺旋或螺旋构造的放电线圈，高频电源以及通过连接到放电线圈的匹配电路并且经由连接电缆与高频电源连接，通过向放电线圈施加高频电压，对真空容器内产生等离子体，以处理设置在基板电极上的基板。

4. 发明授权

US5888413A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5888413A
公开(公告)日：1999-03-30
申请号：US656851
申请日：1996-05-30
申请人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： C23C16/507 , H01J37/32 , C23F1/02 , C23F1/08
CPC分类号： H01J37/321 , C23C16/507
摘要： In a plasma processing method, a substrate is processed by placing the substrate on an electrode in a vacuum chamber, introducing a gas into the vacuum chamber while discharging gas from inside vacuum chamber, applying a high frequency voltage to a spiral discharge coil while keeping the vacuum chamber internally at a pressure to generate a plasma inside the vacuum chamber. At least one of the control parameters of gas type, gas flow rate, pressure, magnitudes of high frequency powers applied to the coil and the electrode, and their high frequency power frequencies is varied while the substrate is processed. The method includes a step of allowing a plasma density in-plane distribution to be controlled in accordance with the timing of varying any of the control parameters.
摘要翻译：在等离子体处理方法中，通过将基板放置在真空室中的电极上，将真空室内的气体导入真空室，同时从真空室内排出气体，同时向螺旋放电线圈施加高频电压，同时保持真空室内部处于压力下，以在真空室内产生等离子体。在处理衬底时，气体类型，气体流量，压力，施加到线圈和电极的高频功率的大小及其高频功率频率的控制参数中的至少一个是变化的。该方法包括根据改变任何控制参数的定时来控制等离子体密度面内分布的步骤。

5. 发明授权

US07205250B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07205250B2
公开(公告)日：2007-04-17
申请号：US10801551
申请日：2004-03-17
申请人： Yoshihiro Yanagi , Ichiro Nakayama
发明人： Yoshihiro Yanagi , Ichiro Nakayama
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/306 , H01L21/3065 , H01L21/31138 , H01L21/32136
摘要： A Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of electric charge on a plasma-processed processing-object substrate and of preventing plasma damage and dielectric breakdown. Before the processing-object substrate is plasma-processed, top-and-bottom surfaces of the processing-object substrate are simultaneously subjected to a weak plasma in gas composed mainly of inert gas, which makes it possible to neutralize the charges on the processing-object substrate. The inert gas is any one of Ar, He, N2, H2, and vaporized H2O gas or a mixed gas of these gases.
摘要翻译：等离子体处理方法和装置显示出降低等离子体处理的处理对象基板上的电荷量并防止等离子体损伤和介质击穿的优异特性。在处理对象基板被等离子体处理之前，处理对象基板的上下表面同时经受主要由惰性气体组成的气体中的弱等离子体，这使得可以中和加工对象基板上的电荷，物体衬底。惰性气体是Ar，He，N 2 H 2，H 2 2和气化的H 2 O 2气体中的任何一种，或这些气体的混合气体气体。

6. 发明申请

US20050037629A1 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20050037629A1
公开(公告)日：2005-02-17
申请号：US10801551
申请日：2004-03-17
申请人： Yoshihiro Yanagi , Ichiro Nakayama
发明人： Yoshihiro Yanagi , Ichiro Nakayama
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/469
CPC分类号： H01L21/306 , H01L21/3065 , H01L21/31138 , H01L21/32136
摘要： Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of charges electrified on a plasma-processed processing-object substrate and preventing plasma damage and dielectric breakdown. Before the processing-object substrate is plasma-processed, top-and-bottom surfaces of the processing-object substrate are simultaneously subjected to a weak plasma in gas composed mainly of inert gas, which makes it possible to neutralize the charges on the processing-object substrate. The inert gas is any one of Ar, He, N2, H2, and vaporized H2O gas or a mixed gas of these gases.
摘要翻译：等离子体处理方法和装置显示了降低在等离子体处理的处理对象基板上带电的电荷量并防止等离子体损伤和介质击穿的优异特性。在处理对象基板被等离子体处理之前，处理对象基板的上下表面同时经受主要由惰性气体组成的气体中的弱等离子体，这使得可以中和加工对象基板上的电荷，物体衬底。惰性气体是Ar，He，N 2，H 2和蒸发的H 2 O气体中的任何一种或这些气体的混合气体。

7. 发明授权

US06875698B2 Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US06875698B2
公开(公告)日：2005-04-05
申请号：US09892023
申请日：2001-06-26
申请人： Kiyohiko Takagi , Teiichi Kimura , Yoshihiro Yanagi
发明人： Kiyohiko Takagi , Teiichi Kimura , Yoshihiro Yanagi
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213
CPC分类号： H01J37/32082 , C23F4/00 , H01L21/32135
摘要： In dry etching process wherein a substrate having a multi-layer film is etched, the etching process is monitored by determining a layer being processed. CHF3 gas is added to the processing gas during a period from the time when the lowermost layer on the substrate is etched until the etching is completed.
摘要翻译：在其中蚀刻具有多层膜的衬底的干式蚀刻工艺中，通过确定被处理层来监测蚀刻工艺。在从蚀刻基板的最下层到蚀刻完成之间的期间，将CHF 3气体加入到处理气体中。

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