会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 94. 发明授权
    • Polishing head and polishing apparatus
    • 抛光头和抛光装置
    • US09278425B2
    • 2016-03-08
    • US13522370
    • 2011-01-20
    • Hiromasa HashimotoKouji MoritaTakashi ArataniHiromi KishidaSatoru Arakawa
    • Hiromasa HashimotoKouji MoritaTakashi ArataniHiromi KishidaSatoru Arakawa
    • B24B37/30B24B37/32H01L21/02
    • B24B37/30B24B37/32H01L21/02024
    • A polishing head including, below a polishing head body, a rubber film held by a disk-shaped mid plate and an annular guide ring disposed around the rubber film holding the back surface of the workpiece on a lower face portion of the rubber film. The polishing head also includes a base member that is coupled to a polishing head body through an elastic film and holds the guide ring and the mid plate such that the lower surface of the guide ring does not contact the polishing pad during polishing. The polishing head and polishing apparatus, are operable in both of the rough polishing process and final polishing process, that can stably achieve predetermined high flatness and high polishing stock removal uniformity in polishing of a workpiece and can obtain a workpiece with fewer fine particles having a diameter of 45 nm or more.
    • 一种抛光头,其包括在抛光头本体下面的由盘形中间板保持的橡胶膜和设置在橡胶膜周围的橡胶膜周围的环形引导环,橡胶膜在橡胶膜的下表面部分上保持工件的后表面。 抛光头还包括通过弹性膜联接到抛光头本体并且保持引导环和中间板的基部构件,使得在抛光期间导向环的下表面不接触抛光垫。 抛光头和抛光装置可以在粗抛光工艺和最终抛光工艺中操作,可以稳定地实现工件抛光中预定的高平整度和高抛光余料去除均匀性,并且可以获得具有更少的具有 直径为45nm以上。
    • 95. 发明授权
    • Method of manufacturing semiconductor wafers
    • 制造半导体晶圆的方法
    • US09123795B2
    • 2015-09-01
    • US14087883
    • 2013-11-22
    • Fujikoshi Machinery Corp.NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    • Yoshio NakamuraDaizo IchikawaHaruo SumizawaShiro HaraSommawan KhumpuangShinichi Ikeda
    • H01L21/00H01L21/78
    • H01L21/78H01L21/02005H01L21/02008
    • A method of manufacturing semiconductor wafers which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers includes steps wherein a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer, by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained.
    • 一种制造半导体晶片的方法,其有利于形成取向扁平线,并且可以毫无问题地进行斜切加工。 制造半导体晶片的方法包括从大直径半导体晶片切出多个小直径晶片的步骤,该方法包括:标记步骤,通过激光束形成直槽状定向扁平线,以便 跨越大直径半导体晶片中的每行中的各个小直径晶片,其中小直径晶片的切割位置对于每个行共同沿特定方向排成一行; 以及切割步骤,在所述标记步骤之后,通过激光束与所述大直径半导体晶片分开地切割所述小直径晶片,使得所述取向扁平线位于所述小直径的所需位置 要获得的晶圆。
    • 96. 发明授权
    • Double-side polishing apparatus
    • 双面抛光装置
    • US08888562B2
    • 2014-11-18
    • US13290646
    • 2011-11-07
    • Tadakazu MiyashitaShogo Koyama
    • Tadakazu MiyashitaShogo Koyama
    • B24B7/00B24B9/00B24B37/28
    • B24B37/28
    • In the double-side polishing apparatus, one end part of a slurry supply hole has a female-tapered face whose inner diameter is gradually increased toward a polishing face of a polishing plate. A pad hole, which corresponds to the slurry supply hole, is formed in a polishing pad covering the slurry supply hole. An edge of the pad hole is located in the slurry supply hole. A fixation pipe, in which a flange section facing the female-tapered face is formed at one end part, is fixed in the slurry supply hole. The edge of the pad hole is sandwiched and held between the female-tapered face of the slurry supply hole and the flange section of the fixation pipe.
    • 在双面抛光装置中,浆料供给孔的一端部具有内径朝向研磨板的研磨面逐渐增大的阴锥面。 对应于浆料供给孔的焊盘孔形成在覆盖浆料供给孔的抛光垫中。 焊盘孔的边缘位于浆料供应孔中。 在一个端部形成有面对阴锥面的凸缘部的固定管固定在浆料供给孔中。 垫孔的边缘被夹持并保持在浆料供给孔的阴锥面与固定管的凸缘部之间。
    • 99. 发明授权
    • Workpiece centering apparatus and method of centering workpiece
    • 工件定心装置和工件对中方法
    • US07524232B2
    • 2009-04-28
    • US11802867
    • 2007-05-25
    • Tadakazu MiyashitaYosuke Kanai
    • Tadakazu MiyashitaYosuke Kanai
    • B24B49/00H01L21/677
    • H01L21/68714B24B37/345
    • The workpiece centering apparatus is capable of highly reducing damage of a workpiece. The workpiece centering apparatus comprises: a guide plate being provided in a tray and covering a water inlet so as to horizontally introduce water into the tray; and at least three overflow outlets for overflowing the water from the tray, the overflow outlets being formed in a peripheral wall of the tray and arranged in the circumferential direction at regular intervals. The workpiece, which is horizontally fed on a surface of the water stored in the tray, is received and floated by surface tension of the water. Then, the workpiece is centered in the tray by water flows radially overflowing from the tray via the overflow outlets.
    • 工件定心装置能够高度减少工件的损伤。 工件定心装置包括:引导板设置在托盘中并覆盖水入口以将水水平地引入托盘; 以及至少三个用于从托盘溢出水的溢流出口,所述溢流口形成在所述托盘的周壁中并且以周期方向以规则的间隔布置。 水平地供给在储存在托盘中的水的表面上的工件被水的表面张力接收并漂浮。 然后,通过溢流出口从托盘径向溢出的水流将工件中心在托盘中。
    • 100. 发明申请
    • Double-side polishing apparatus
    • 双面抛光装置
    • US20080227371A1
    • 2008-09-18
    • US12076061
    • 2008-03-13
    • Susumu OnishiMasashi Maruta
    • Susumu OnishiMasashi Maruta
    • B24B7/00
    • B24B37/013B24B37/08B24B37/205B24B49/12
    • The double-side polishing apparatus for polishing both faces of a wafer is capable of reliably measuring not only a thickness of an outer part of the wafer but also a thickness of a center part thereof. The double-side polishing apparatus comprises: a lower polishing plate; an upper polishing plate held by a frame; and a carrier having a through-hole for holding the wafer. A window section, through which a laser beam passes, is formed in a part of the upper polishing plate, under which the wafer held by the carrier passes. An optical thickness measuring equipment is provided to a part of the frame, under which the window section passes while the upper polishing plate is rotated. The thickness measuring equipment emits the laser beam through the window section, receives reflected beams reflected from an upper face and a lower face of the wafer, and calculates the thickness of the wafer on the basis of peak values of the reflected beams.
    • 用于抛光晶片的两个面的双面抛光装置不仅可以可靠地测量晶片的外部部分的厚度,而且还可以测量其中心部分的厚度。 双面抛光装置包括:下抛光板; 由框架保持的上抛光板; 以及具有用于保持晶片的通孔的载体。 激光束通过的窗口部分形成在上部抛光板的一部分中,由载体保持的晶片穿过该部分。 光学厚度测量设备被提供到框架的一部分,在上部抛光板旋转的同时窗户部分通过该部分。 厚度测量设备通过窗口部分发射激光束,接收从晶片的上表面和下表面反射的反射光束,并且基于反射光束的峰值来计算晶片的厚度。