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1. 发明申请

US20230037123A1 METHOD FOR CONTROLLING THE RADIOTHERAPY TREATMENT OF CANCER PATIENTS AND RELATED CONTROL DEVICE 有权
公开(公告)号：US20230037123A1
公开(公告)日：2023-02-02
申请号：US17870919
申请日：2022-07-22
申请人： S.I.T.-Sordina IORT Technologies S.p.A.
发明人： Giuseppe FELICI , Massimo DI FRANCESCO , Salvatore BARONE , Fabio DI MARTINO , Vincenzo GALASSO
IPC分类号： G01L21/30 , A61N5/10 , G01L21/02
摘要： The present invention concerns a device for controlling the radiotherapy treatment of cancer patients, comprising a gas chamber (10) with flat and parallel electrodes (7), placed at a certain distance (d), a window (2) placed above an electrode (7) and insulating means (4, 5, 6) placed below the electrode (7). The chamber (10) is connected to a collector (8) through which a noble gas is introduced into a cavity (11) of the chamber (10), so that the electric field inside the chamber (10) is due to the polarisation of the chamber (10) and to the charges generated by the radiation pulse. The invention also concerns the related control method.

2. 发明授权

US11366036B2 Polymer composite vacuum components 有权
公开(公告)号：US11366036B2
公开(公告)日：2022-06-21
申请号：US17119804
申请日：2020-12-11
申请人： MKS Instruments, Inc.
发明人： Brandon J. Kelly , Clinton L. Percy , Scott C. Heinbuch , Gerardo A. Brucker , Timothy C. Swinney , Timothy R. Piwonka-Corle
IPC分类号： G01L21/34 , G01L21/30 , G01L19/00 , B29C45/14 , B29K23/00 , B29K69/00 , B29K71/00 , B29L31/00
摘要： A gauge having a housing formed of a polymer material and one or more electrical feedthrough pins disposed in the housing. The electrical feedthrough pins can be oriented substantially perpendicular to each other and have complex shapes.

3. 发明授权

US09935023B2 Methods for manufacturing semiconductor device and for detecting end point of dry etching 有权
公开(公告)号：US09935023B2
公开(公告)日：2018-04-03
申请号：US15630385
申请日：2017-06-22
申请人： Renesas Electronics Corporation
发明人： Toshikazu Hanawa , Kazuhide Fukaya , Kentaro Yamada
IPC分类号： G01L21/30 , G01R31/00 , H01L21/66 , H01L21/311 , H01L21/768 , H01L23/522 , H01L23/532 , G01N21/73 , G01N21/84 , G01N21/68 , H01J37/32
CPC分类号： H01L22/26 , G01N21/68 , G01N21/73 , G01N21/84 , G01N2021/8411 , G01N2021/8427 , G01N2201/1247 , H01J37/32963 , H01J2237/334 , H01L21/31116 , H01L21/76802 , H01L21/76846 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53266 , H01L23/5329
摘要： A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.

4. 发明授权

US09927383B2 Apparatus and method for preventing malfunction in an electronic device 有权
公开(公告)号：US09927383B2
公开(公告)日：2018-03-27
申请号：US14753852
申请日：2015-06-29
申请人： Samsung Electronics Co., Ltd.
发明人： Hyun-Jong Roh , Min-Woo Oh , Jin-Hee Won , Dong-Yup Lee , Ho-Chul Hwang
IPC分类号： G01R27/08 , G01N27/04 , G01N27/62 , G01L21/30 , H04R5/04 , G01N27/64 , H01R24/58
CPC分类号： G01N27/048 , G01L21/30 , G01N27/62 , G01N27/64 , H01R24/58 , H04R5/04 , H04R2420/05
摘要： A method for operation of an electronic device and an electronic device are provided. The method includes determining if an object is detected at a first terminal and a second terminal among a plurality of terminals of an ear jack. If the object is detected, the impedance of the second terminal is calculated, and a type of the object is determined according to the calculated impedance.

5. 发明授权

US09711423B2 Methods for manufacturing semiconductor device and for detecting end point of dry etching 有权
公开(公告)号：US09711423B2
公开(公告)日：2017-07-18
申请号：US15205069
申请日：2016-07-08
申请人： Renesas Electronics Corporation
发明人： Toshikazu Hanawa , Kazuhide Fukaya , Kentaro Yamada
IPC分类号： G01L21/30 , G01R31/00 , H01L21/66 , H01L21/311 , H01L21/768 , H01L23/522 , H01L23/532 , G01N21/73 , G01N21/84
CPC分类号： H01L22/26 , G01N21/68 , G01N21/73 , G01N21/84 , G01N2021/8411 , G01N2021/8427 , G01N2201/1247 , H01J37/32963 , H01J2237/334 , H01L21/31116 , H01L21/76802 , H01L21/76846 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53266 , H01L23/5329
摘要： A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.

6. 发明授权

US09460905B2 Method of assessing vacuum conditions in a mass spectrometer with transient signal decay rates 有权
标题翻译：用瞬态信号衰减速率评估质谱仪中真空条件的方法
公开(公告)号：US09460905B2
公开(公告)日：2016-10-04
申请号：US14686012
申请日：2015-04-14
申请人： Thermo Fisher Scientific (Bremen) GmbH
发明人： Konstantin Aizikov , Dirk Nolting , Jan-Peter Hauschild
IPC分类号： H01J49/24 , G01L21/30 , H01J49/42 , H01J49/38
CPC分类号： H01J49/24 , G01L21/30 , H01J49/38 , H01J49/425 , H01J49/4265
摘要： A method is proposed for assessing the vacuum conditions in a mass spectrometer (10) such as an ion cyclotron resonance or orbital trapping mass spectrometer. Such mass spectrometers generate a transient detection signal resulting from ions of one or species in an ion trap (80). The parameters of the trap and/or introduced ions are adjusted so as to cause the decay rate of the transient in respect of the ion species to be dominated by collisional effects. Typically this can be achieved by introducing ions into the trap (80) in quantities such that ion clouds of a particular ion species self bunch. The rate of decay of the transient signal in that case is determined and compared with one or more threshold decay rates. This in turn can provide an indication of vacuum conditions within the trap (80).
摘要翻译：提出了一种用于评估质谱仪（10）如离子回旋共振或轨道捕获质谱仪中的真空条件的方法。这种质谱仪产生由离子阱（80）中的一个或多个物质的离子产生的瞬态检测信号。调节陷阱和/或引入的离子的参数，以使离子种类的瞬变的衰减速率由碰撞效应来支配。通常，这可以通过将离子引入捕集器（80）中以使得特定离子物质的离子云自发束的量来实现。在这种情况下，确定瞬态信号的衰减速率并将其与一个或多个阈值衰减速率进行比较。这又可以提供陷阱（80）内的真空条件的指示。

7. 发明授权

US09460895B2 Gas supply method for semiconductor manufacturing apparatus, gas supply system, and semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置，供气系统和半导体制造装置的气体供给方法
公开(公告)号：US09460895B2
公开(公告)日：2016-10-04
申请号：US14377898
申请日：2013-03-08
申请人： Tokyo Electron Limited
发明人： Hideyuki Hatoh , Hiroyuki Ogawa
IPC分类号： H01L21/302 , H01L21/461 , G01R31/00 , G01L21/30 , C03C15/00 , C03C25/68 , C23F1/00 , B44C1/22 , H01J37/32 , H01L29/84 , H01L21/66 , H01L21/3065 , H01L21/768
CPC分类号： H01J37/3244 , H01L21/3065 , H01L21/30655 , H01L21/76898 , H01L22/26 , H01L29/84 , Y10T137/87684
摘要： A gas supply method includes controlling communication between first and second gas pipes and a diffusion chamber using first and second valves; controlling discharge of gas within the first and second gas pipes using third and fourth valves connected upstream from the first and second valves; and controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve. The gas supply method further includes a first pressurization step of closing the first valve and the third valve before starting a first step and pressurizing a first gas within the first gas pipe; a second pressurization step of closing the second valve and the fourth valve before starting a second step and pressurizing a second gas within the second gas pipe; and an exhaust step of opening the fifth valve upon starting the first step and the second step, and discharging gas within the diffusion chamber.
摘要翻译：气体供给方法包括使用第一和第二阀控制第一和第二气体管道与扩散室之间的连通; 使用连接在第一和第二阀上游的第三和第四阀来控制第一和第二气体管道内的气体排放; 以及使用第五阀控制排气管和扩散室之间的连通。气体供给方法还包括在开始第一步骤之前关闭第一阀和第三阀并对第一气体管内的第一气体加压的第一加压步骤; 第二加压步骤，在开始第二步骤之前关闭第二阀和第四阀并对第二气体管内的第二气体加压; 以及在开始第一步骤和第二步骤时打开第五阀的排气步骤，并且在扩散室内排放气体。

8. 发明授权

US09404827B2 Ionization gauge with operational parameters and geometry designed for high pressure operation 有权
标题翻译：具有操作参数和几何设计用于高压操作的电离计
公开(公告)号：US09404827B2
公开(公告)日：2016-08-02
申请号：US14174386
申请日：2014-02-06
申请人： MKS Instruments, Inc.
发明人： Gerardo A. Brucker
IPC分类号： G01L21/30 , G01L21/32 , G01L21/34 , H01J41/02
CPC分类号： G01L21/30 , G01L21/32 , G01L21/34 , H01J41/02
摘要： An ionization gauge to measure pressure and to reduce sputtering yields includes at least one electron source that generates electrons. The ionization gauge also includes a collector electrode that collects ions formed by the collisions between the electrons and gas molecules. The ionization gauge also includes an anode. An anode bias voltage relative to a bias voltage of a collector electrode is configured to switch at a predetermined pressure to decrease a yield of sputtering collisions.
摘要翻译：用于测量压力和减少溅射产生的电离计包括产生电子的至少一个电子源。电离计还包括收集由电子和气体分子之间的碰撞形成的离子的集电极。电离计还包括阳极。相对于集电极的偏置电压的阳极偏置电压被配置为在预定压力下切换以降低溅射碰撞的产量。

9. 发明授权

US09338871B2 Feedforward temperature control for plasma processing apparatus 有权
标题翻译：等离子体处理装置的前馈温度控制
公开(公告)号：US09338871B2
公开(公告)日：2016-05-10
申请号：US12905624
申请日：2010-10-15
申请人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
发明人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
IPC分类号： G01L21/30 , G01R31/00 , H01L21/302 , H01L21/461 , H01L21/306 , C23F1/00 , H05H1/00 , H01J37/32
CPC分类号： H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

10. 发明授权

US09330990B2 Method of endpoint detection of plasma etching process using multivariate analysis 有权
标题翻译：使用多变量分析的等离子体蚀刻工艺的端点检测方法
公开(公告)号：US09330990B2
公开(公告)日：2016-05-03
申请号：US14056059
申请日：2013-10-17
申请人： TOKYO ELECTRON LIMITED
发明人： Yan Chen , Serguei Komarov , Vi Vuong
IPC分类号： G01L21/30 , G01R31/00 , H01L21/66 , H01J37/32 , G06F17/16 , H01L21/67
CPC分类号： H01L22/26 , G06F17/16 , H01J37/32963 , H01L21/3065 , H01L21/67069
摘要： Disclosed is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.
摘要翻译：公开了一种使用光发射光谱（OES）数据作为输入来确定蚀刻工艺的端点的方法。光发射光谱（OES）数据通过附着在等离子体蚀刻处理工具上的光谱仪获得。首先将所获取的时间演变的光谱数据进行滤波并分析，然后使用多元分析（如主成分分析）将其转换为变换的光谱数据或趋势，其中先前计算的主成分权重用于完成变换。可以使用包含多个趋势的功能形式来更准确地确定蚀刻工艺的终点。公开了一种基于从先前蚀刻处理收集的OES数据计算实际蚀刻之前的主要分量权重的方法，该方法有助于快速计算涉及多个趋势的趋势和功能形式，以有效和准确地在线确定蚀刻过程端点。

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