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1. 发明公开

US20230194790A1 SILICON BEAM-STEERING APPARATUS AND METHOD FOR MANUFACTURING 审中-公开
公开(公告)号：US20230194790A1
公开(公告)日：2023-06-22
申请号：US18084495
申请日：2022-12-19
申请人： Auroratech Company
发明人： Ziqi Peng , Mark Flowers , Bayley Wang
IPC分类号： G02B6/35 , G02B6/136
CPC分类号： G02B6/3516 , G02B6/3518 , G02B6/352 , G02B6/136 , G02B2006/12085
摘要： An optical silicon beam-steering apparatus made from one or more silicon wafers. The apparatus includes a bonded stack of one or more wafers including a mirror wafer and a possibly distinct wafer for actuation which allows the device to achieve a large scan range, a large mirror size and a high scan frequency.

2. 发明授权

US09829727B2 Polymer-clad optical modulators 有权
公开(公告)号：US09829727B2
公开(公告)日：2017-11-28
申请号：US15305930
申请日：2014-05-07
申请人： HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
发明人： Zhihong Huang , Di Liang , Zhen Peng , Raymond G Beausoleil
IPC分类号： G02F1/035 , G02F1/065 , G02B6/122 , G02B6/293 , G02F1/00 , G02F1/025 , G02B6/12
CPC分类号： G02F1/065 , G02B6/122 , G02B6/29341 , G02B2006/12061 , G02B2006/12085 , G02B2006/12142 , G02F1/0018 , G02F1/025 , G02F2201/12 , G02F2202/022 , G02F2202/103 , G02F2202/105 , G02F2203/055 , G02F2203/15
摘要： A polymer-clad optical modulator includes a substrate comprising an insulating material; a silicon microring on the substrate; silicon waveguides on the substrate adjacent the silicon microring; an electro-optic polymer covering the silicon microring and the silicon waveguide; and an electrical contact on top of the electro-optic polymer. The silicon microring or a portion of an adjacent silicon layer is lightly doped. A polymer-clad depletion type optical modulator and a polymer-clad carrier injection type optical modulator, each employing the lightly doped silicon microring or an adjacent lightly doped silicon layer, are also described.

3. 发明授权

US09690046B2 Optical circuit board and method for producing the same 有权
公开(公告)号：US09690046B2
公开(公告)日：2017-06-27
申请号：US15048017
申请日：2016-02-19
申请人： KYOCERA Circuit Solutions, Inc.
发明人： Kenji Terada , Akifumi Sagara
IPC分类号： G02B6/12 , G02B6/132 , G02B6/42
CPC分类号： G02B6/132 , G02B6/4214 , G02B6/428 , G02B2006/12085 , G02B2006/12104
摘要： The optical circuit board includes a wiring board including a plurality of laminated insulating layers, and a wiring conductor disposed between the insulating layers; an optical waveguide including a lower clad layer, an upper clad layer and a core sandwiched between the lower clad layer and the upper clad layer, disposed on an upper surface of the wiring board, and extending in one direction; a reflection surface including an inner surface of a groove formed in a part of the core of the optical waveguide, and being perpendicular to an extending direction in a plane view and having a predetermined angle with respect to the upper surface in a cross sectional view; and a metal layer disposed on an upper surface of the insulating layer on the upper side than the wiring conductor of the wiring board, and set as a bottom surface of the groove.

4. 发明授权

US09678273B2 Device for propagating light and method for fabricating a device 有权
公开(公告)号：US09678273B2
公开(公告)日：2017-06-13
申请号：US14727128
申请日：2015-06-01
申请人： International Business Machines Corporation
发明人： Jens Hofrichter , Daniel S. Jubin , Edward W. Kiewra , Antonio La Porta
IPC分类号： G02B6/26 , G02B6/24 , G02B6/122 , G02B6/12
CPC分类号： G02B6/24 , G02B6/122 , G02B6/1228 , G02B2006/12061 , G02B2006/12069 , G02B2006/12085
摘要： A device for propagating light is described, comprising: a substrate having a semiconductor material, an insulating layer, wherein the insulating layer is arranged on the substrate, a recess reaching through the insulating layer and into the substrate, wherein the recess is at least partially filled with a filler material, and a waveguide arranged in or on the filler material.

5. 发明申请

US20160245999A1 Low Loss Optical Crossing and Method of Making Same 审中-公开
标题翻译：低损耗光穿越及其制作方法
公开(公告)号：US20160245999A1
公开(公告)日：2016-08-25
申请号：US15146531
申请日：2016-05-04
申请人： Huawei Technologies Co., Ltd.
发明人： Dominic John Goodwill
IPC分类号： G02B6/125 , G02B6/35 , G02B6/124 , G02B6/122 , G02B6/126
CPC分类号： G02B6/125 , G02B6/12 , G02B6/122 , G02B6/1228 , G02B6/124 , G02B6/126 , G02B6/26 , G02B6/2935 , G02B6/3596 , G02B2006/12038 , G02B2006/12061 , G02B2006/12085 , G02B2006/12097 , G02B2006/12195
摘要： A low loss optical crossing and a method of making an optical crossing in a photonic integrated circuit. An optical crossing embodiment includes a crossing region having a crossing length, wherein a light path through the crossing region is laterally unbound; an input waveguide having an input crossing end and an input distal end, and coupled to the crossing region at the input crossing end, thereby partially forming the light path; and an output waveguide having an output crossing end and an output distal end, and coupled to the crossing region at the output crossing end, thereby partially forming the light path, wherein a crossing width of the output waveguide at the output crossing end is larger than a crossing width of the input waveguide at the input crossing end according to the crossing length.
摘要翻译：低损耗光学交叉和在光子集成电路中制作光交叉的方法。光学交叉实施例包括具有交叉长度的交叉区域，其中穿过所述交叉区域的光路横向不结合; 输入波导，其具有输入交叉端和输入远端，并且在输入交叉端处耦合到交叉区域，从而部分地形成光路; 以及输出波导，其具有输出交叉端和输出远端，并且在输出交叉端处耦合到交叉区域，从而部分地形成光路，其中输出交叉端处的输出波导的交叉宽度大于根据交叉长度在输入交叉端的输入波导的交叉宽度。

6. 发明申请

US20150268417A1 BURIED WAVEGUIDE PHOTODETECTOR 有权
公开(公告)号：US20150268417A1
公开(公告)日：2015-09-24
申请号：US14694265
申请日：2015-04-23
申请人： International Business Machines Corporation
发明人： SOLOMON ASSEFA , WILLIAM M. GREEN , STEVEN M. SHANK , YURII A. VLASOV
IPC分类号： G02B6/12 , G02B6/42 , G02B6/132
CPC分类号： G02B6/12004 , G02B6/131 , G02B6/132 , G02B6/136 , G02B6/4257 , G02B6/4291 , G02B2006/12085 , G02B2006/121 , G02B2006/12123 , H01L21/8238 , H01L27/1461 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L31/02327 , H01L31/028 , H01L31/0745 , H01L31/165 , H01L31/1808 , H01L31/1812 , Y02E10/547
摘要： A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolating the first and second silicon-on-insulator region. Within a first region of the STI region, a first germanium material is deposited adjacent a first side wall of the semiconductor optical waveguide. Within a second region of the STI region, a second germanium material is deposited adjacent a second side wall of the semiconductor optical waveguide, whereby the second side wall opposes the first side wall. The first and second germanium material form an active region that evanescently receives propagating optical signals from the first and second side wall of the semiconductor optical waveguide.
摘要翻译：形成具有光电检测器和CMOS器件的集成光子半导体结构的方法可以包括在绝缘体上的第一绝缘体区域上形成CMOS器件，在第二绝缘体上硅区域上形成硅光波导，并形成浅沟槽隔离（STI）区域，使得浅沟槽隔离电隔离第一和第二绝缘体上硅区域。在STI区域的第一区域内，第一锗材料沉积在半导体光波导的第一侧壁附近。在STI区域的第二区域内，与半导体光波导的第二侧壁相邻地沉积第二锗材料，由此第二侧壁与第一侧壁相对。第一和第二锗材料形成有源区，其从半导体光波导的第一和第二侧壁瞬时接收传播的光信号。

7. 发明申请

US20150093068A1 Optical Device 有权
标题翻译：光学设备
公开(公告)号：US20150093068A1
公开(公告)日：2015-04-02
申请号：US14039374
申请日：2013-09-27
申请人： Alcatel-Lucent USA Inc.
发明人： Cristian A. Bolle
IPC分类号： G02B6/122
CPC分类号： G02B6/4214 , G02B6/12 , G02B6/125 , G02B6/42 , G02B6/4286 , G02B2006/12085 , G02B2006/12104 , G02B2006/1215
摘要： An apparatus is disclosed comprising a planar optical waveguide structure which includes a substrate and two planar optical waveguides thereon. The apparatus further comprises a solid structure having a body and two branches connected to the body. Each of the two branches has a reflective surface area thereon. Each of the two planar optical waveguides is configured to optically couple light from an end thereof to the reflective surface area of a corresponding one of the branches. The planar optical waveguide structure further includes a third planar optical waveguide on the substrate. The third planar optical waveguide has a segment located between the solid structure and the substrate.
摘要翻译：公开了一种包括平面光波导结构的装置，其包括基板和其上的两个平面光波导。该装置还包括具有主体和连接到主体的两个分支的实体结构。两个分支中的每一个在其上具有反射表面积。两个平面光波导中的每一个被配置为将光的一端光学地耦合到相应的一个分支的反射表面区域。平面光波导结构还包括在基板上的第三平面光波导。第三平面光波导具有位于固体结构和基板之间的段。

8. 发明申请

US20140197507A1 BURIED WAVEGUIDE PHOTODETECTOR 有权
公开(公告)号：US20140197507A1
公开(公告)日：2014-07-17
申请号：US13741416
申请日：2013-01-15
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： SOLOMON ASSEFA , WILLIAM M. GREEN , STEVEN M. SHANK , YURII A. VLASOV
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： G02B6/12004 , G02B6/131 , G02B6/132 , G02B6/136 , G02B6/4257 , G02B6/4291 , G02B2006/12085 , G02B2006/121 , G02B2006/12123 , H01L21/8238 , H01L27/1461 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L31/02327 , H01L31/028 , H01L31/0745 , H01L31/165 , H01L31/1808 , H01L31/1812 , Y02E10/547
摘要： A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolating the first and second silicon-on-insulator region. Within a first region of the STI region, a first germanium material is deposited adjacent a first side wall of the semiconductor optical waveguide. Within a second region of the STI region, a second germanium material is deposited adjacent a second side wall of the semiconductor optical waveguide, whereby the second side wall opposes the first side wall. The first and second germanium material form an active region that evanescently receives propagating optical signals from the first and second side wall of the semiconductor optical waveguide.
摘要翻译：形成具有光电检测器和CMOS器件的集成光子半导体结构的方法可以包括在绝缘体上的第一绝缘体区域上形成CMOS器件，在第二绝缘体上硅区域上形成硅光波导，并形成浅沟槽隔离（STI）区域，使得浅沟槽隔离电隔离第一和第二绝缘体上硅区域。在STI区域的第一区域内，第一锗材料沉积在半导体光波导的第一侧壁附近。在STI区域的第二区域内，与半导体光波导的第二侧壁相邻地沉积第二锗材料，由此第二侧壁与第一侧壁相对。第一和第二锗材料形成有源区，其从半导体光波导的第一和第二侧壁瞬时接收传播的光信号。

9. 发明授权

US12044908B2 III-V/SI hybrid optoelectronic device and method of manufacture 有权
公开(公告)号：US12044908B2
公开(公告)日：2024-07-23
申请号：US17055541
申请日：2019-05-15
申请人： ROCKLEY PHOTONICS LIMITED
发明人： Guomin Yu
IPC分类号： G02F1/025 , H01L33/00 , H01L33/30 , H01L33/58 , G02B6/12
CPC分类号： G02F1/025 , H01L33/0066 , H01L33/30 , H01L33/58 , G02B2006/12061 , G02B2006/12085 , G02B2006/12142
摘要： A method of manufacturing an electro-optically active device. The method comprising the steps of: etching a cavity on a silicon-on-insulator wafer; providing a sacrificial layer adjacent to a substrate of a lll-V semiconductor wafer; epitaxially growing an electro-optically active structure on the lll-V semiconductor wafer; etching the epitaxially grown optically active structure into an electro-optically active mesa; disposing the electro-optically active mesa in the cavity of the silicon-on-insulator wafer and bonding a surface of the electro-optically active mesa, which is distal to the sacrificial layer, to a bed of the cavity; and removing the sacrificial layer between the substrate of the lll-V semiconductor wafer and the electro-optically active mesa.

10. 发明公开

US20240159961A1 METHOD FOR MANUFACTURING A PHOTONIC DEVICE PROVIDED WITH AT LEAST TWO PHOTONIC CHIPS, AND PHOTONIC DEVICE 审中-公开
公开(公告)号：US20240159961A1
公开(公告)日：2024-05-16
申请号：US18552255
申请日：2022-03-23
申请人： Scintil Photonics
发明人： Sylvie Menezo
IPC分类号： G02B6/12 , G02B6/13 , G02B6/136
CPC分类号： G02B6/12004 , G02B6/131 , G02B6/136 , G02B2006/12085 , G02B2006/12121 , G02B2006/12123 , G02B2006/12147 , G02B2006/12176 , G02B2006/12178
摘要： A method of manufacturing a device comprises the following steps: a) providing a structure that comprises a layer on a final substrate, the layer comprising a first guide and a second guide, and a grating coupler, the first and second waveguides being spaced apart from a coupling face by a first distance D1 and a second distance D2, greater than D1, respectively; b) transferring, to the coupling face, at least one first block and at least one second block formed of a first and of a second photonic stack, respectively; c) forming, from the first block and from the second block, respectively, a first component and a second component coupled, respectively, to the first waveguide evanescently or adiabatically, and to the second waveguide via the grating.

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