会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method for evaluating failure rate
    • 评估失败率的方法
    • US08510635B2
    • 2013-08-13
    • US12979914
    • 2010-12-28
    • Yun-Chi YangYen-Song LiuChin-Hsien ChenSheng-Yu WuKuan-Cheng Su
    • Yun-Chi YangYen-Song LiuChin-Hsien ChenSheng-Yu WuKuan-Cheng Su
    • G11C29/00
    • G11C29/52G01R31/287G11C29/42G11C29/44G11C29/56008G11C2029/0409G11C2029/0411
    • A method for evaluating failure rate, which is applied to a plurality of semiconductor chips with error checking and correcting function includes the following steps. A first read-write test operation is applied to the semiconductor chips, thereby obtaining a plurality of first failure bit counting values. The error checking and correcting function of each of the semiconductor chips is off. An aging test is applied to the semiconductor chips. A second read-write test operation as the first read-write test operation is applied to the semiconductor chips, thereby obtaining a plurality of second failure bit counting values. The number of the semiconductor chips, the first failure bit counting values, the second failure bit counting values and an error checking and correcting coefficient are calculated to obtain a failure rate of the semiconductor chips.
    • 一种用于评估故障率的方法,其应用于具有错误检查和校正功能的多个半导体芯片包括以下步骤。 对半导体芯片应用第一读写测试操作,从而获得多个第一故障比特计数值。 每个半导体芯片的错误检查和校正功能关闭。 对半导体芯片进行老化试验。 作为第一读写测试操作的第二读写测试操作被应用于半导体芯片,从而获得多个第二故障位计数值。 计算半导体芯片的数量,第一故障比特计数值,第二故障比特计数值和错误校验系数,以获得半导体芯片的故障率。
    • 3. 发明申请
    • NON-VOLATILE MEMORY
    • 非易失性存储器
    • US20090212353A1
    • 2009-08-27
    • US12434828
    • 2009-05-04
    • Chin-Hsien ChenYing-Tso ChenChien-Hung LiuShou-Wei Huang
    • Chin-Hsien ChenYing-Tso ChenChien-Hung LiuShou-Wei Huang
    • H01L29/792
    • H01L27/115H01L27/11521H01L27/11568H01L29/7881H01L29/792
    • A non-volatile memory includes a substrate having two openings, a stacked gate structure disposed on the substrate between the two openings, a liner disposed on a bottom of each of the two openings and parts of a sidewall of each of the two openings, a second conductive layer disposed on the liner at the bottom of each of the two openings, and a third conductive layer on the second conductive layer and the liner. The stacked gate structure includes a first dielectric layer, a charge storage layer, a second dielectric layer, and a first conductive layer. The liner has a top surface lower than that of the substrate. The second conductive layer has a top surface co-planar with that of the liner. The third conductive layer has a top surface at least co-planar with that of the substrate and lower than that of the first dielectric layer.
    • 非易失性存储器包括具有两个开口的衬底,设置在两个开口之间的衬底上的堆叠栅极结构,设置在两个开口中的每一个的底部和两个开口中的每一个的侧壁的一部分的衬垫, 设置在两个开口中的每一个的底部的衬垫上的第二导电层,以及在第二导电层和衬垫上的第三导电层。 层叠栅极结构包括第一介电层,电荷存储层,第二介电层和第一导电层。 衬垫具有比衬底更低的顶表面。 第二导电层具有与衬垫的顶表面共面的顶表面。 第三导电层具有至少与基底的共面的顶表面,并且低于第一介电层的顶表面。
    • 4. 发明授权
    • Non-volatile memory and method of fabricating the same
    • 非易失性存储器及其制造方法
    • US07572691B2
    • 2009-08-11
    • US11435458
    • 2006-05-16
    • Chin-Hsien ChenYing-Tso ChenChien-Hung LiuShou-Wei Huang
    • Chin-Hsien ChenYing-Tso ChenChien-Hung LiuShou-Wei Huang
    • H01L21/336H01L21/8234
    • H01L27/115H01L27/11521H01L27/11568H01L29/7881H01L29/792
    • A method of fabricating a non-volatile memory is provided. First, two openings are formed on a substrate. A stacked gate structure comprising a first dielectric layer, a charge storage layer, a second dielectric layer and a first conductive layer is formed on the substrate between the two openings. A liner is formed on a bottom and a portion of a sidewall of the tow openings, wherein a top surface of the liner is lower than that of the substrate. A second conductive layer is formed on the liner at the bottom of the two openings, wherein a top surface of the second conductive layer is co-planar with that of the liner. A third conductive layer is formed on the second conductive layer and the liner, wherein a top surface of the third conductive layer is co-planar with that of the substrate and lower than that of the first dielectric layer.
    • 提供了一种制造非易失性存储器的方法。 首先,在基板上形成两个开口。 在两个开口之间的基板上形成包括第一电介质层,电荷存储层,第二电介质层和第一导电层的堆叠栅极结构。 衬套形成在丝束开口的侧壁的底部和一部分上,其中衬垫的顶表面低于衬底的顶表面。 第二导电层形成在两个开口的底部的衬垫上,其中第二导电层的顶表面与衬垫的顶表面共面。 第三导电层形成在第二导电层和衬垫上,其中第三导电层的顶表面与衬底的顶表面平行,并且低于第一介电层的顶表面。
    • 7. 发明授权
    • Electronic device with fan
    • 带风扇的电子设备
    • US09163638B2
    • 2015-10-20
    • US13445933
    • 2012-04-13
    • Chin-Hsien Chen
    • Chin-Hsien Chen
    • F04D29/42F04D25/06F04D29/52
    • F04D25/0613F04D29/4226F04D29/522
    • An electronic device includes a casing and a fan received in the casing. The fan includes a cover plate, a bottom plate and a side wall. An air outlet is defined in the side wall. The bottom plate defines an air inlet. The casing includes a bottom cover and a top cover. The bottom cover includes a base plate, and a side plate extending upwardly from a periphery of the base plate. The bottom plate includes a horizontal first area and a second area inclining relative to the first area. A height of the base plate relative to a horizontal plane gradually increases from one side of the casing to another side of the casing. A height of the second area relative to the horizontal plane also gradually increases from the one side of the casing to another side of the casing.
    • 电子设备包括壳体和容纳在壳体中的风扇。 该风扇包括盖板,底板和侧壁。 在侧壁中限定出气口。 底板限定了空气入口。 壳体包括底盖和顶盖。 底盖包括基板和从基板的周边向上延伸的侧板。 底板包括水平的第一区域和相对于第一区域倾斜的第二区域。 基板相对于水平面的高度从壳体的一侧逐渐增加到壳体的另一侧。 第二区域相对于水平面的高度也从壳体的一侧逐渐增加到壳体的另一侧。