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1. 发明申请

US20050110032A1 Light-Emitting Diode and Semiconductor Light-Emitting Device 审中-公开
标题翻译：发光二极管和半导体发光器件
公开(公告)号：US20050110032A1
公开(公告)日：2005-05-26
申请号：US10904622
申请日：2004-11-19
申请人： Hirohisa Saito , Yoshiyuki Hirose , Youichi Nagai , Hiroyuki Kitabayashi , Ayako Ikeda
发明人： Hirohisa Saito , Yoshiyuki Hirose , Youichi Nagai , Hiroyuki Kitabayashi , Ayako Ikeda
IPC分类号： F21V8/00 , G02F1/1335 , H01L33/06 , H01L33/32 , H01L33/46 , H01L33/50 , H01L33/00
CPC分类号： H01L33/505 , G02B6/0046 , H01L33/46 , H01L2224/48091 , H01L2924/00014
摘要： A light-emitting diode (1) is furnished with a semiconductor laminate (6), optically reflective layers (17) and (19), an optically reflective film (25), and a phosphorescent plate (27). The laminate (6) is formed by an n-type cladding layer (9), an active layer (11), a p-type cladding layer (13), and a p-type contact layer (15), laminated in order onto a substrate (7). The optically reflective layers (17) and (19) are provided respectively on the p-type contact layer (15) and on the back side (7b) of the substrate (7). The optically reflective film (25) is provided on three side surfaces of the laminate (6). The phosphorescent plate (27) is mounted on a side face, among the side faces of the laminate (6), on which there is no optically reflective film (25). Blue light (L1) output from the active layer (11) is reflected at each of the optically reflective layers, and is gathered on the side face on which the phosphorescent plate (27) is provided. A portion of the blue light (L1) turns into yellow light (2) in the phosphorescent plate (27), and white light derived from the blue light (L1) and yellow light (L2) is emitted.
摘要翻译：发光二极管（1）配备有半导体层叠体（6），光反射层（17）和（19），光反射膜（25）和磷光板（27）。层叠体（6）由n型包覆层（9），有源层（11），p型覆盖层（13）和p型接触层（15）依次层叠而形成衬底（7）。光反射层（17）和（19）分别设置在基板（7）的p型接触层（15）和背面（7b）上。光反射膜（25）设置在层叠体（6）的三个侧面上。磷光板（27）安装在层叠体（6）的没有光反射膜（25）的侧面中的侧面上。从有源层（11）输出的蓝光（L 1）在每个光反射层被反射，聚集在设置有磷光板（27）的侧面上。蓝色光（L 1）的一部分在磷光板（27）中变成黄色光（2），发出蓝色光（L 1）和黄色光（L 2）衍生的白色光。

2. 发明申请

US20060157717A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20060157717A1
公开(公告)日：2006-07-20
申请号：US11311638
申请日：2005-12-20
申请人： Youichi Nagai , Hiroyuki Kitabayashi , Hirohisa Saito , Ayako Ikeda
发明人： Youichi Nagai , Hiroyuki Kitabayashi , Hirohisa Saito , Ayako Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00011 , H01L2924/10155 , H01L2924/10253 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2924/01049 , H01L2924/01004 , H01L2924/01005
摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.
摘要翻译：获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上氮化物半导体衬底，n型Al x Ga 1-x N层，p型Al x Ga 1-x N层， x N层比从氮化物半导体衬底观察到的n型Al x Ga 1-x N层更远，并且位于 n型Al x Ga 1-x N层和p型Al x Ga 1-x N层，以及p型Al x Ga 1-x N层， N层。在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的一侧为并且从与氮化物半导体衬底的第一主表面相对的第二主表面1a发射光。氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。

3. 发明授权

US07476909B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07476909B2
公开(公告)日：2009-01-13
申请号：US11311638
申请日：2005-12-20
申请人： Youichi Nagai , Hiroyuki Kitabayashi , Hirohisa Saito , Ayako Ikeda
发明人： Youichi Nagai , Hiroyuki Kitabayashi , Hirohisa Saito , Ayako Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00011 , H01L2924/10155 , H01L2924/10253 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2924/01049 , H01L2924/01004 , H01L2924/01005
摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.
摘要翻译：获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上氮化物半导体衬底，n型Al x Ga 1-x N层，从氮化物半导体衬底观察的位于比n型Al x Ga 1-x N层更远的p型Al x Ga 1-x N层，以及位于n型Al x Ga 1-x N层之间的量子阱 -xN层和p型Al x Ga 1-x N层。在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的侧面朝下地安装，并且从第二主表面1a射出光与氮化物半导体衬底的第一主表面相对。氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。

4. 发明申请

US20050121688A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20050121688A1
公开(公告)日：2005-06-09
申请号：US11001414
申请日：2004-12-02
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/12 , H01L33/32 , H01L33/42 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/00
CPC分类号： H01L33/02 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/58 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
摘要： A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.
摘要翻译：发光器件包括电阻率为0.5Ω·cm以下的氮化物半导体衬底，与氮化物半导体衬底相比，n型氮化物半导体层和p型氮化物半导体层比n型氮化物半导体在氮化物半导体衬底的第一主表面侧的层和位于n型氮化物半导体层和p型氮化物半导体层之间的发光层，其中氮化物半导体衬底和p型氮化物半导体之一层安装在发光的顶侧，而另一个放置在下侧，并且在顶侧放置单个电极。因此，提供了一种发光装置，其具有简单的结构，从而易于制造，可以长时间提供高的发光效率，并且可以容易地小型化。

5. 发明申请

US20050062060A1 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US20050062060A1
公开(公告)日：2005-03-24
申请号：US10923046
申请日：2004-08-23
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumui Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumui Yoshimoto
IPC分类号： H01L29/24 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm以下，p型氮化物半导体层侧被下放，使得从氮化物半导体衬底的第二主表面在与第一主体相反的一侧发射光表面。

6. 发明授权

US07687822B2 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US07687822B2
公开(公告)日：2010-03-30
申请号：US11727425
申请日：2007-03-27
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm·cm·cm以下，p型氮化物半导体层一侧被下降，使得从氮化物半导体衬底的第二主表面与第一主表面。

7. 发明申请

US20080210959A1 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US20080210959A1
公开(公告)日：2008-09-04
申请号：US11727425
申请日：2007-03-27
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm以下，p型氮化物半导体层侧被下放，使得从氮化物半导体衬底的第二主表面在与第一主体相反的一侧发射光表面。

8. 发明授权

US07202509B2 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US07202509B2
公开(公告)日：2007-04-10
申请号：US10923046
申请日：2004-08-23
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm以下，p型氮化物半导体层侧被下放，使得从氮化物半导体衬底的第二主表面在与第一主体相反的一侧发射光表面。

9. 发明授权

US07190004B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07190004B2
公开(公告)日：2007-03-13
申请号：US11001414
申请日：2004-12-02
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/58 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
摘要： A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.
摘要翻译：发光器件包括电阻率为0.5Ω·cm以下的氮化物半导体衬底，与氮化物半导体衬底相比，n型氮化物半导体层和p型氮化物半导体层比n型氮化物半导体在氮化物半导体衬底的第一主表面侧的层和位于n型氮化物半导体层和p型氮化物半导体层之间的发光层，其中氮化物半导体衬底和p型氮化物半导体之一层安装在发光的顶侧，而另一个放置在下侧，并且在顶侧放置单个电极。因此，提供了一种发光装置，其具有简单的结构，从而易于制造，可以长时间提供高的发光效率，并且可以容易地小型化。

10. 发明申请

US20050098801A1 Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20050098801A1
公开(公告)日：2005-05-12
申请号：US10980258
申请日：2004-11-04
申请人： Ayako Ikeda , Youichi Nagai , Takao Nakamura
发明人： Ayako Ikeda , Youichi Nagai , Takao Nakamura
IPC分类号： H01L33/06 , H01L33/10 , H01L33/12 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/46 , H01L27/10
CPC分类号： H01L33/38 , H01L33/32 , H01L33/387 , H01L33/405
摘要： A semiconductor light emitting device includes: a first conductivity type semiconductor layer made of nitride semiconductor; a second conductivity type semiconductor layer made of nitride semiconductor, the second conductivity type semiconductor layer being provided on the first conductivity type semiconductor layer; an active layer made of nitride semiconductor, the active layer being provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode provided on the second conductivity type semiconductor layer, the second electrode having a predetermined pattern; and a reflecting metal layer provided on the second conductivity type semiconductor layer and the second electrode.
摘要翻译：一种半导体发光器件包括：由氮化物半导体制成的第一导电型半导体层; 由氮化物半导体制成的第二导电型半导体层，所述第二导电类型半导体层设置在所述第一导电型半导体层上; 由氮化物半导体制成的有源层，所述有源层设置在所述第一导电类型半导体层和所述第二导电类型半导体层之间; 电连接到第一导电类型半导体层的第一电极; 设置在所述第二导电类型半导体层上的第二电极，所述第二电极具有预定图案; 以及设置在所述第二导电类型半导体层和所述第二电极上的反射金属层。

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