专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06232625B1 Semiconductor configuration and use thereof 失效
标题翻译：半导体结构及其用途
公开(公告)号：US06232625B1
公开(公告)日：2001-05-15
申请号：US09472060
申请日：1999-12-23
申请人： Wolfgang Bartsch , Heinz Mitlehner , Dietrich Stephani
发明人： Wolfgang Bartsch , Heinz Mitlehner , Dietrich Stephani
IPC分类号： H01L2980
CPC分类号： H01L29/1608 , H01L29/8083 , H02H9/02
摘要： A semiconductor configuration, in particular based on silicon carbide, is specified which rapidly limits a short-circuit current to an acceptable current value. For this purpose, when a predetermined saturation current is exceeded, a lateral channel region is pinched off, and the current is limited to a value below the saturation current.
摘要翻译：特别是基于碳化硅的半导体结构被规定为将短路电流快速地限制到可接受的电流值。为此，当超过预定的饱和电流时，横向沟道区被夹紧，电流被限制在低于饱和电流的值。

2. 发明授权

US06188555B1 Device for limiting alternating electric currents, in particular in the event of a short circuit 失效
标题翻译：用于限制交流电流的装置，特别是在短路的情况下
公开(公告)号：US06188555B1
公开(公告)日：2001-02-13
申请号：US09426417
申请日：1999-10-25
申请人： Heinz Mitlehner , Dietrich Stephani , Wolfgang Bartsch
发明人： Heinz Mitlehner , Dietrich Stephani , Wolfgang Bartsch
IPC分类号： H02H318
CPC分类号： H01L29/1608 , H01L29/8083 , H02H9/02
摘要： A device for limiting an alternating electric current includes a least one passive semiconductor configuration and a protection circuit. The semiconductor configuration is configured such that when a forward voltage is applied thereto, a forward current flows through the semiconductor configuration. The forward current increases monotonously with the forward voltage up to a saturation current at an associated saturation voltage. At a forward voltage above the saturation voltage, the forward current is limited to a limiting current that is smaller than the saturation current. The semiconductor configuration is further configured such that when a reverse voltage is applied, a reverse current flows through the passive semiconductor configuration. The reverse current increases at a first rate monotonously with the reverse voltage up to a given reverse breakdown voltage and, when exceeding the reverse breakdown voltage, the reverse current rises at a second rate greater than the first rate due to a charge carrier breakdown. The protection circuit includes diodes for preventing the passive semiconductor configuration from being driven to the reverse breakdown voltage by a half wave of an alternating current in the reverse direction.
摘要翻译：用于限制交流电流的装置包括至少一个无源半导体配置和保护电路。半导体配置被配置为使得当向其施加正向电压时，正向电流流过半导体配置。正向电流随着正向电压单调增加，在相关的饱和电压下达到饱和电流。在高于饱和电压的正向电压下，正向电流被限制在小于饱和电流的极限电流。进一步配置半导体配置，使得当施加反向电压时，反向电流流过无源半导体配置。反向电流以第一速率以反向电压单调增加直到给定的反向击穿电压，并且当超过反向击穿电压时，由于载流子击穿，反向电流以大于第一速率的第二速率上升。保护电路包括二极管，用于防止被动半导体结构在相反方向上通过交流电的半波驱动到反向击穿电压。

3. 发明授权

US06459108B1 Semiconductor configuration and current limiting device 有权
标题翻译：半导体配置和限流器件
公开(公告)号：US06459108B1
公开(公告)日：2002-10-01
申请号：US09426424
申请日：1999-10-25
申请人： Wolfgang Bartsch , Heinz Mitlehner , Dietrich Stephani
发明人： Wolfgang Bartsch , Heinz Mitlehner , Dietrich Stephani
IPC分类号： H01L2980
CPC分类号： H01L29/1608 , H01L29/8083 , H02H9/02
摘要： The semiconductor configuration is formed with a lateral channel region and an adjoining vertical channel region in an n-conductive first semiconductor region. When a predetermined saturation current is exceeded, the lateral channel region is pinched off and the current is limited to a value below the saturation current.
摘要翻译：半导体结构形成在n导电的第一半导体区域中的横向沟道区域和相邻的垂直沟道区域。当超过预定的饱和电流时，横向沟道区被夹断，电流被限制在低于饱和电流的值。

4. 发明授权

US06468890B2 Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device 失效
标题翻译：具有欧姆接触连接的半导体器件和用于半导体器件的欧姆接触连接的方法
公开(公告)号：US06468890B2
公开(公告)日：2002-10-22
申请号：US09799866
申请日：2001-03-02
申请人： Wolfgang Bartsch , Reinhold Schörner , Dietrich Stephani
发明人： Wolfgang Bartsch , Reinhold Schörner , Dietrich Stephani
IPC分类号： H01L2144
CPC分类号： H01L29/808 , H01L21/0485 , H01L29/0634 , H01L29/0847 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L2924/0002 , H01L2924/00
摘要： The disclosed semiconductor device comprises an ohmic contact between a semiconductor region made of n-conducting silicon carbide and a largely homogeneous ohmic contact layer (110), which adjoins the semiconductor region and is made of a material having a first and a second material component. A silicide formed from the first material component and the silicon of the silicon carbide and a carbide formed from the second material component and the carbon of the silicon carbide are contained in a junction region between the semiconductor region and the ohmic contact layer. The silicide and carbide formation take place at maximum 1000° C.
摘要翻译：所公开的半导体器件包括在由n导电碳化硅制成的半导体区域和大体均匀的欧姆接触层（110）之间的欧姆接触，其邻接半导体区域并且由具有第一和第二材料成分的材料制成。由半导体区域和欧姆接触层之间的接合区域包含由第一材料成分和碳化硅的硅形成的硅化物和由第二材料成分形成的碳化物和碳化硅的碳。硅化物和碳化物的形成发生在最大1000°C

5. 发明授权

US06365919B1 Silicon carbide junction field effect transistor 有权
标题翻译：碳化硅结场效应晶体管
公开(公告)号：US06365919B1
公开(公告)日：2002-04-02
申请号：US09530622
申请日：2000-07-11
申请人： Jenoe Tihanyi , Heinz Mitlehner , Wolfgang Bartsch
发明人： Jenoe Tihanyi , Heinz Mitlehner , Wolfgang Bartsch
IPC分类号： H01L310312
CPC分类号： H01L29/45 , H01L21/0485 , H01L29/0634 , H01L29/1608 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/66068 , H01L29/7838
摘要： A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a principal surface of the silicon carbide body and penetrate the layers. The source and drain trenches are filled with silicon carbide of one conductivity type, whereas the trench for the gate is filled with silicon carbide of a conductivity type that is different from the source and the drain.
摘要翻译：横向碳化硅结场效应晶体管具有p导电和n导电碳化硅层。这些层在碳化硅体中沿横向成对设置。用于源极，漏极和栅极的沟槽从碳化硅本体的主表面延伸并穿透层。源极和漏极沟槽填充有一种导电类型的碳化硅，而用于栅极的沟槽填充有不同于源极和漏极的导电类型的碳化硅。

6. 发明授权

US06905916B2 Method for processing a surface of an SiC semiconductor layer and Schottky contact 有权
标题翻译：用于处理SiC半导体层的表面和肖特基接触的方法
公开(公告)号：US06905916B2
公开(公告)日：2005-06-14
申请号：US10146585
申请日：2002-05-15
申请人： Wolfgang Bartsch , Michael Treu , Roland Rupp
发明人： Wolfgang Bartsch , Michael Treu , Roland Rupp
IPC分类号： H01L29/872 , H01L21/04 , H01L21/20 , H01L21/3065 , H01L29/47 , H01L29/74
CPC分类号： H01L21/0495 , H01L21/048 , H01L21/0485
摘要： A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.
摘要翻译：一种用于处理通过外延生产的SiC半导体主体上的表面的方法。根据该方法，通过蚀刻去除在外延的最后相中沉积的部分上覆层，然后进行湿化学处理以除去表面上的薄的天然氧化物。或者，也可以在去除处理之后立即将表面构造为肖特基接触和/或欧姆接触的金属层施加于表面。

7. 发明授权

US4801596A Nitroxy amino propanols for treating heart and circulatory diseases 失效
标题翻译：用于治疗心脏和循环系统疾病的硝基氨基丙醇
公开(公告)号：US4801596A
公开(公告)日：1989-01-31
申请号：US803497
申请日：1985-12-02
申请人： Herbert Simon , Helmut Michel , Walter-Gunar Friebe , Wolfgang Bartsch
发明人： Herbert Simon , Helmut Michel , Walter-Gunar Friebe , Wolfgang Bartsch
IPC分类号： A61K31/135 , A61K31/165 , A61K31/21 , A61K31/275 , A61K31/443 , A61K31/445 , A61P9/08 , A61P9/10 , A61P9/12 , A61P25/02 , C07C67/00 , C07C231/00 , C07C231/02 , C07C231/12 , C07C233/12 , C07C233/16 , C07C235/08 , C07C235/34 , C07C239/00 , C07C253/00 , C07C255/54 , C07C255/59 , C07C269/00 , C07C275/50 , C07C301/00 , C07C311/30 , C07C311/37 , C07C313/00 , C07C317/18 , C07C317/46 , C07D211/22 , C07D211/46 , C07D295/04 , C07D303/22 , C07D405/12
CPC分类号： C07D303/22 , C07C255/00 , C07D211/22 , C07D211/46 , C07D405/12
摘要： The present invention provides new aminopropanol derivatives of the general formula: ##STR1## wherein A is a direct bond, a straight-chained or branched alkylene chain containing up to 3 carbon atoms or a --CO--CH.sub.2 -- group; X is a direct bond or a carbonyl group; B is a straight-chained or branched, saturated or unsaturated alkylene chain containing up to 12 carbon atoms, in which one or two --CH.sub.2 -- groups can also be replaced by a saturated or unsaturated alkylene ring containing 3 to 7 carbon atoms and/or by an oxygen or sulphur atom or an --S(.dbd.O)-- or --S(.dbd.O).sub.2 -- group, n is 1, 2 or 3; R.sub.1 is a hydrogen atom or a straight-chained or branched, saturated or unsaturated alkyl radical containing up to 6 carbon atoms or a --B--(ONO.sub.2).sub.n group, in which B and n have the same meanings as above, or when A is a --CO--CH.sub.2 -- group and X is a direct bond, R.sub.1 together with the nitrogen atom and a carbon atom of chain B can represent a heteroaliphatic ring containing 2 to 7 carbon atoms; R.sub.2 is a hydrogen or halogen atom or a cyano, hydroxyl, amino, nitro, carboxyl, carbamoyl, ureido or sulphamoyl group or an alkyl, alkoxy, alkylamino, alkylthio, hydroxyalkyl, aminoalkyl, alkoxycarbonyl, alkylcarbonyl, alkylaminocarbonyl, alkylcarbonylamino, alkoxycarbonylamino or alkylaminocarbonylamino radical; and R.sub.3 is an alkyl or nitroxyalkyl radical containing 3 to 8 carbon atoms; and the physiologically acceptable salts thereof.The present invention also provides processes for the preparation of these aminopropanol derivatives and pharmaceutical compositions containing them, as well as intermediates for the preparation of the new aminopropanol derivatives.
摘要翻译：本发明提供了以下通式的新的氨基丙醇衍生物：其中A是直接键，含有至多3个碳原子的直链或支链亚烷基链或-CO-CH 2 - 基团; X是直接键或羰基; B是含有至多12个碳原子的直链或支链，饱和或不饱和的亚烷基链，其中一个或两个-CH 2 - 基团也可以被含有3至7个碳原子的饱和或不饱和亚烷基环和/或通过氧或硫原子或-S（= O） - 或-S（= O）2 - 基团，n是1,2或3; R1是氢原子或含有至多6个碳原子的直链或支链，饱和或不饱和的烷基或-B-（ONO 2）n基团，其中B和n具有与上述相同的含义，或当A 是-CO-CH 2 - 基团，X是直接键，R 1与氮原子一起形成，链B的碳原子可以表示含有2至7个碳原子的杂脂肪族环; R2是氢或卤原子或氰基，羟基，氨基，硝基，羧基，氨基甲酰基，脲基或氨磺酰基或烷基，烷氧基，烷基氨基，烷硫基，羟基烷基，氨基烷基，烷氧基羰基，烷基羰基，烷基氨基羰基，烷基羰基氨基，烷氧基羰基氨基或烷基氨基羰基氨基激进; R3为含有3-8个碳原子的烷基或硝基烷基; 及其生理上可接受的盐。本发明还提供制备这些氨基丙醇衍生物和含有它们的药物组合物的方法，以及制备新的氨基丙醇衍生物的中间体。

8. 发明授权

US4436742A 4-Hydroxy-2,1,3-benzthiadiazole compounds and .beta.-adrenergic method of use therefor 失效
标题翻译： 4-羟基-2,1,3-苯并噻二唑化合物和β-肾上腺素能方法
公开(公告)号：US4436742A
公开(公告)日：1984-03-13
申请号：US208741
申请日：1980-11-20
申请人： Erich Fauland , Wolfgang Kampe , Kurt Stach , Wolfgang Bartsch , Egon Roesch
发明人： Erich Fauland , Wolfgang Kampe , Kurt Stach , Wolfgang Bartsch , Egon Roesch
IPC分类号： C07D285/10 , C07D285/14 , C07D285/06
CPC分类号： C07D285/14
摘要： New amine derivatives of 4-hydroxy-2,1,3-benzthiadiazoles of the formula: ##STR1## wherein R is straight-chained or branched alkyl and the pharmacologically compatible salts thereof, that are markedly effected as inhibitors of adrenogenic .beta.-receptors and thus useful for the treatment and prophylaxis of cardiac and circulatory diseases.
摘要翻译：具有下式的4-羟基-2,1,3-苯并噻二唑的新胺衍生物：其中R是直链或支链烷基及其药理学上相容的盐，其显着作为肾上腺素β的抑制剂受体，因此可用于治疗和预防心脏和循环系统疾病。

9. 发明授权

US3982012A 4-Hydroxy-benzimidazole compounds and therapeutic compositions 失效
标题翻译： 4-羟基 - 苯并咪唑化合物和治疗组合物
公开(公告)号：US3982012A
公开(公告)日：1976-09-21
申请号：US585645
申请日：1975-06-10
申请人： Erich Fauland , Wolfgang Kampe , Max Thiel , Wolfgang Bartsch , Wolfgang Schaumann
发明人： Erich Fauland , Wolfgang Kampe , Max Thiel , Wolfgang Bartsch , Wolfgang Schaumann
IPC分类号： C07D235/06 , A61K31/4184 , C07D235/08
CPC分类号： C07D235/08
摘要： New 4-hydroxy-benzimidazole compounds of the formula: ##EQU1## wherein R.sub.1 is straight-chained or branched alkyl andR.sub.2 is hydrogen atom or lower alkylAnd the pharmacologically compatible salts thereof; are outstandingly effective in the treatment and prophylaxis of cardiac and circulatory diseases, and provide substantially greater margins of safety than prior art adrenergic .beta.-receptor inhibitors.
摘要翻译：新的下式的4-羟基 - 苯并咪唑化合物：OH | O-CH 2 -CH-CH 2 -NH-R 1（I）其中R 1是直链或支链烷基，R 2是氢原子或低级烷基，并且其药理学上可兼容的盐 ; 在治疗和预防心脏病和循环系统疾病方面非常有效，并且提供比现有抗生素β受体抑制剂更安全的重要安全标志。

10. 发明授权

US3976779A 1,2,3,4-Tetrahydro-carbazole compounds and .beta.-adrenergic compositions 失效
标题翻译： 1,2,3,4-四氢咔唑化合物和{62-肾上腺素能组合物
公开(公告)号：US3976779A
公开(公告)日：1976-08-24
申请号：US568743
申请日：1975-04-16
申请人： Herbert Leinert , Alfred Popelak , Kurt Stach , Wolfgang Bartsch , Karl Dietmann
发明人： Herbert Leinert , Alfred Popelak , Kurt Stach , Wolfgang Bartsch , Karl Dietmann
IPC分类号： C07D209/88 , A61K31/40
CPC分类号： C07D209/88
摘要： New 1,2,3,4-tetra-hydrocarbazole derivatives of the formula: ##SPC1##Wherein R.sup.1 is straight-chained or branched alkyl, and the pharmacologically compatible salts thereof, are markedly effective as inhibitors of adrogenic .beta.-receptors and thus useful for the treatment and prophylaxis of cardiac and circulatory diseases.
摘要翻译：新的具有下式的1,2,3,4-四烃基衍生物：

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式