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1. 发明申请

US20120135357A1 POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS 审中-公开
标题翻译：聚合物，阳性抗蚀剂组合物和方法
公开(公告)号：US20120135357A1
公开(公告)日：2012-05-31
申请号：US13303283
申请日：2011-11-23
申请人： Tomohiro KOBAYASHI , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Kenji Funatsu , Seiichiro Tachibana
发明人： Tomohiro KOBAYASHI , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Kenji Funatsu , Seiichiro Tachibana
IPC分类号： G03F7/20 , C08F214/18
CPC分类号： G03F7/2041 , C08K5/375 , C08K5/42 , C08L41/00 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A positive resist composition comprising a polymer comprising recurring units of a specific structure adapted to generate an acid upon exposure to high-energy radiation, recurring units of a lactone ring-containing structure, and acid labile units, all the recurring units being free of hydroxyl, can form a fine size pattern having a rectangular profile and improved collapse resistance.
摘要翻译：一种正性抗蚀剂组合物，其包含聚合物，其包含适于在暴露于高能量辐射时产生酸的特定结构的重复单元，含内酯环结构的重复单元和酸不稳定单元，所有重复单元不含羟基可以形成具有矩形轮廓和改进的抗倒塌性的精细尺寸图案。

2. 发明申请

US20130101936A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：积极的组合和绘图过程
公开(公告)号：US20130101936A1
公开(公告)日：2013-04-25
申请号：US13616317
申请日：2012-09-14
申请人： Ryosuke Taniguchi , Tomohiro Kobayashi , Jun Hatakeyama , Kenji Funatsu , Masahiro Kanayama
发明人： Ryosuke Taniguchi , Tomohiro Kobayashi , Jun Hatakeyama , Kenji Funatsu , Masahiro Kanayama
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units containing an acid labile group, recurring units having a lactone ring, and recurring units having an oxirane ring, the polymer being adapted to increase alkaline dissolution under the action of an acid, (B) a photoacid generator, and (C) a solvent forms a fine pattern with improved LWR, improved MEF, rectangular profile, and collapse resistance.
摘要翻译：一种正型抗蚀剂组合物，其包含（A）包含含有酸不稳定基团的重复单元的聚合物，具有内酯环的重复单元和具有环氧乙烷环的重复单元的聚合物，所述聚合物适于在酸的作用下增加碱溶解性（ B）光致酸发生器，（C）溶剂形成具有改善的LWR，改进的MEF，矩形轮廓和抗倒塌性的精细图案。

3. 发明授权

US06835525B2 Polymer, resist composition and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06835525B2
公开(公告)日：2004-12-28
申请号：US10073223
申请日：2002-02-13
申请人： Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Kenji Funatsu
发明人： Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Kenji Funatsu
IPC分类号： G03F7038
CPC分类号： C08F224/00 , C08F216/16 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译：通过使（甲基）丙烯酸衍生物与乙烯基醚化合物，烯丙基醚化合物和含氧脂环族烯烃化合物共聚得到新的聚合物。包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率，耐腐蚀性和最小化的溶胀，并且使其自身具有电子束或深UV的微图形化。

4. 发明申请

US20110054133A1 RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：耐候聚合物，制备方法，耐蚀组合物和图案处理方法
公开(公告)号：US20110054133A1
公开(公告)日：2011-03-03
申请号：US12940511
申请日：2010-11-05
申请人： Seiichiro Tachibana , Kenji Funatsu , Takeshi Kinsho , Tsunehiro Nishi
发明人： Seiichiro Tachibana , Kenji Funatsu , Takeshi Kinsho , Tsunehiro Nishi
IPC分类号： C08F224/00
CPC分类号： G03F7/0397 , C08F2/38 , G03F7/0046
摘要： A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.
摘要翻译：通过预先向反应器中加入含有链转移剂并保持在聚合温度的反应器，并连续地或不连续地向反应器中滴加含有单体和聚合引发剂的溶液进行自由基聚合来制备抗蚀剂用聚合物。聚合物具有基本上不溶性组分的最小化含量。使用该聚合物作为基础树脂的抗蚀剂组合物通过光刻处理产生最小数目的缺陷，并且可用于形成微观图案。

5. 发明申请

US20070264592A1 Resist polymer, preparing method, resist composition and patterning process 审中-公开
标题翻译：抗蚀聚合物，制备方法，抗蚀剂组成和图案化工艺
公开(公告)号：US20070264592A1
公开(公告)日：2007-11-15
申请号：US11797683
申请日：2007-05-07
申请人： Seiichiro Tachibana , Kenji Funatsu , Takeshi Kinsho , Tsunehiro Nishi
发明人： Seiichiro Tachibana , Kenji Funatsu , Takeshi Kinsho , Tsunehiro Nishi
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F2/38 , G03F7/0046
摘要： A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.
摘要翻译：通过预先向反应器中加入含有链转移剂并保持在聚合温度的反应器，并连续地或不连续地向反应器中滴加含有单体和聚合引发剂的溶液进行自由基聚合来制备抗蚀剂用聚合物。聚合物具有基本上不溶性组分的最小化含量。使用该聚合物作为基础树脂的抗蚀剂组合物通过光刻处理产生最小数目的缺陷，并且可用于形成微观图案。

6. 发明授权

US08871427B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08871427B2
公开(公告)日：2014-10-28
申请号：US13526057
申请日：2012-06-18
申请人： Ryosuke Taniguchi , Akihiro Seki , Kenji Funatsu , Katsuhiro Kobayashi
发明人： Ryosuke Taniguchi , Akihiro Seki , Kenji Funatsu , Katsuhiro Kobayashi
IPC分类号： G03F7/004 , G03F7/20 , H01L21/027 , C07C381/12 , G03F7/11 , C08F220/34 , G03F7/039 , G03F7/32 , C08F220/36
CPC分类号： G03F7/0397 , C07C381/12 , C08F220/34 , C08F220/36 , G03F7/11 , G03F7/20 , G03F7/2041 , G03F7/32 , H01L21/0273 , Y10S430/114 , Y10S430/115
摘要： There is disclosed a positive resist composition comprising (A) a resin having repeating units shown by the following general formulae (1) and (2) as repeating units that contain acid labile groups and being capable of increasing its alkaline solubility by an acid, (B) a photoacid generator, (C) a compound shown by the following general formula (3), and (D) a solvent. There can be a positive resist composition having high resolution, and at the same time giving an excellent pattern profile; and a patterning process in which an immersion lithography is carried out using a formed top coat.
摘要翻译：公开了一种正型抗蚀剂组合物，其包含（A）具有以下通式（1）和（2）所示的重复单元的树脂作为含有酸不稳定基团并且能够通过酸增加其碱溶性的重复单元（ B）光致酸发生剂，（C）下述通式（3）所示的化合物和（D）溶剂。可以具有高分辨率的正性抗蚀剂组合物，同时具有优异的图案图案; 以及使用形成的表面涂层进行浸渍光刻的图案化工艺。

7. 发明申请

US20070148594A1 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20070148594A1
公开(公告)日：2007-06-28
申请号：US11645751
申请日：2006-12-27
申请人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译：提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％（2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9，和R 11是H或CH 3，Y是亚甲基或O，R 2是CO 2 R 2，当Y为O时，当Y为亚甲基且R 2为H或CO 2 R 10时，SUP> 10 > 10是C 1 -C 15烷基，其可以被O，R 5和R 6分开， / SUP>是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。

8. 发明授权

US07718342B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07718342B2
公开(公告)日：2010-05-18
申请号：US11645751
申请日：2006-12-27
申请人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译：提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％（2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9和R 11为H或CH 3，Y为亚甲基或O，当Y为亚甲基时，R 2为CO 2 R 10，当Y为O时，R 2为H或CO 2 R 10，R 10为C 1 -C 15烷基由O分隔，R 5和R 6是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。

9. 发明授权

US07135270B2 Resist polymer, resist composition and patterning process 有权
标题翻译：抗蚀聚合物，抗蚀剂组成和图案化工艺
公开(公告)号：US07135270B2
公开(公告)日：2006-11-14
申请号：US10911676
申请日：2004-08-05
申请人： Takeru Watanabe , Tsunehiro Nishi , Junji Tsuchiya , Kenji Funatsu , Koji Hasegawa
发明人： Takeru Watanabe , Tsunehiro Nishi , Junji Tsuchiya , Kenji Funatsu , Koji Hasegawa
IPC分类号： G03C1/73 , G03F7/039 , G03F7/20 , G03F7/30 , C08F124/00
CPC分类号： C08F220/18 , C08F220/26 , G03F7/0397 , Y10S430/111
摘要： A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2, R3 and R6 are H or CH3, R4 and R5 are H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein R7 is C1–C10 alkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译：包含式（1），（2），（3）和（4）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2，R 3和R 6是H或CH 3 N >，R 4和R 5是H或OH，X是具有双环[2.2.1]庚烷骨架的叔外烷基，由式（X-1）至（X-4）：其中R 7为C 1 -C 10烷基，Y为叔烷基具有金刚烷结构的组。包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的接近偏压，并且借助于用于VLSI制造的电子束或深UV的微图案化。

10. 发明申请

US20050089796A1 Polymer, resist material and patterning processing 有权
标题翻译：聚合物，抗蚀材料和图案加工
公开(公告)号：US20050089796A1
公开(公告)日：2005-04-28
申请号：US10933013
申请日：2004-09-01
申请人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
发明人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
IPC分类号： C08F220/26 , C08F220/28 , G03C1/76 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , C08F220/26 , Y10S430/111
摘要： Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided. In addition, provided is a pattern formation process comprising steps of applying the resist material onto a substrate, heating the film, exposing the heated film through a photomask to high energy radiation or electron beam, heating the exposed film and then developing with a developer.
摘要翻译：提供了可用作抗蚀剂材料的基础树脂的聚合物，其特征在于具有高分辨率，具有较小侧壁粗糙度的图案，实际上可接受的耐蚀刻性，以及曝光后允许的热处理温度的显着余量。所述聚合物的重均分子量为1,000至50,000，并且包含至少一种下式（1）的重复单元，至少一个下式的式（2）的重复单元和至少一个式（3）的重复单元，下面。还提供了包含聚合物的抗蚀剂材料。此外，提供了图案形成方法，其包括以下步骤：将抗蚀剂材料施加到基底上，加热膜，将加热的膜通过光掩模曝光到高能量辐射或电子束，加热曝光的膜，然后用显影剂显影。

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