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    • 6. 发明申请
    • Optimized CMP Conditioner Design for Next Generation Oxide/Metal CMP
    • 用于下一代氧化物/金属CMP的优化CMP调节剂设计
    • US20090053980A1
    • 2009-02-26
    • US12195600
    • 2008-08-21
    • Taewook HwangJ. Gary BaldoniThomas Puthanangady
    • Taewook HwangJ. Gary BaldoniThomas Puthanangady
    • B24B33/00
    • B24B53/017B24B53/12B24D3/06
    • A study of several key conditioner design parameters has been conducted. The purpose was to improve conditioner performance by considering factors such as wafer defects, pad life, and conditioner life. For this study, several key conditioner design parameters such as diamond type, diamond size, diamond shape, diamond concentration and distribution, were selected to determine their effect on CMP performance and process stability. Experimental validations were conducted. Conditioner specifications were matched to each specific CMP environment (intended application) in order to improve process stability and CMP performance particularly for emerging technology nodes. Several conditioner designs were developed and run successfully in the field. Significant planarity improvement for a 300 mm CMP process was achieved in accordance with one embodiment, and an increase of pad life and wafer polish rate was simultaneously achieved with another embodiment.
    • 已经对几个关键的调节器设计参数进行了研究。 其目的是通过考虑诸如晶片缺陷,垫寿命和调理剂寿命等因素来改善调节剂性能。 对于这项研究,选择了几种关键的调节器设计参数,如钻石类型,金刚石尺寸,菱形,金刚石浓度和分布,以确定其对CMP性能和工艺稳定性的影响。 进行实验验证。 调节器规格与每个特定CMP环境(预期应用)匹配,以提高工艺稳定性和CMP性能,特别是对于新兴技术节点。 在现场开发并运行了几种护发素设计。 根据一个实施例,实现300mm CMP工艺的显着的平面度改进,并且另一实施例同时实现焊盘寿命和晶片抛光速率的增加。
    • 7. 发明授权
    • Optimized CMP conditioner design for next generation oxide/metal CMP
    • 用于下一代氧化物/金属CMP的优化CMP调整剂设计
    • US08657652B2
    • 2014-02-25
    • US12195600
    • 2008-08-21
    • Taewook HwangJ. Gary BaldoniThomas Puthanangady
    • Taewook HwangJ. Gary BaldoniThomas Puthanangady
    • B24B53/00
    • B24B53/017B24B53/12B24D3/06
    • A study of several key conditioner design parameters has been conducted. The purpose was to improve conditioner performance by considering factors such as wafer defects, pad life, and conditioner life. For this study, several key conditioner design parameters such as diamond type, diamond size, diamond shape, diamond concentration and distribution, were selected to determine their effect on CMP performance and process stability. Experimental validations were conducted. Conditioner specifications were matched to each specific CMP environment (intended application) in order to improve process stability and CMP performance particularly for emerging technology nodes. Several conditioner designs were developed and run successfully in the field. Significant planarity improvement for a 300 mm CMP process was achieved in accordance with one embodiment, and an increase of pad life and wafer polish rate was simultaneously achieved with another embodiment.
    • 已经对几个关键的调节器设计参数进行了研究。 其目的是通过考虑诸如晶片缺陷,垫寿命和调理剂寿命等因素来改善调节剂性能。 对于这项研究,选择了几种关键的调节器设计参数,如钻石类型,金刚石尺寸,菱形,金刚石浓度和分布,以确定其对CMP性能和工艺稳定性的影响。 进行实验验证。 调节器规格与每个特定CMP环境(预期应用)匹配,以提高工艺稳定性和CMP性能,特别是对于新兴技术节点。 在现场开发并运行了几种护发素设计。 根据一个实施例,实现300mm CMP工艺的显着的平面度改进,并且另一实施例同时实现焊盘寿命和晶片抛光速率的增加。