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1. 发明授权

US06179910B2 Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors 有权
标题翻译：制造适用于制造半导体的硅单晶和晶片的方法
公开(公告)号：US06179910B2
公开(公告)日：2001-01-30
申请号：US09396107
申请日：1999-09-14
申请人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
发明人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： This invention provides a method for manufacturing silicon single crystals. The method is capable of eliminating void defects existing in deep regions of a silicon single crystal despite the size of the silicon single crystal. The silicon single crystals according to this invention are pulled the radius of a ring-shaped oxidation induced stacking fault (OSF ring) of a wafer is larger than half the radius of the wafer during the process of thermal oxidation treatment.
摘要翻译：本发明提供一种制造单晶硅的方法。该方法尽管硅单晶的尺寸能够消除存在于硅单晶的深区域中的空隙缺陷。根据本发明的硅单晶在热氧化处理过程中拉动晶片的环形氧化诱导堆垛层错（OSF环）的半径大于晶片半径的一半。

2. 发明授权

US06056931A Silicon wafer for hydrogen heat treatment and method for manufacturing the same 失效
标题翻译：氢热处理用硅片及其制造方法
公开(公告)号：US06056931A
公开(公告)日：2000-05-02
申请号：US14048
申请日：1998-01-27
申请人： Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
发明人： Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
IPC分类号： H01L21/02 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/322 , H01L21/324 , C01B33/26
CPC分类号： C30B33/02 , C30B29/06 , C30B33/00
摘要： In growing silicon single crystals by the CZ method, the cooling rate in the 1150-1080.degree. C. temperature zone (defect-forming temperature range) where the grown-in defects are formed is set at more than 2.0.degree. C./min to manufacture single crystals having an as-grown LSTD density of larger than 3.0.times.10.sup.6 /cm.sup.3 or a FPD density of larger than 6.0.times.10.sup.5 /cm.sup.3. As this single crystal has a small defect size, thus the dissolution rate of the defects increases by the heat treatment in a non-oxidizing atmosphere containing a hydrogen gas, so the effect of the hydrogen heat treatment can extend to the depth more than 3 .mu.m from the wafer surface.
摘要翻译：在通过CZ法生长的硅单晶中，形成生长缺陷的1150-1080℃温度区（缺陷形成温度范围）中的冷却速度设定在2.0℃/ min以上制造具有大于3.0×10 6 / cm 3的生长的LSTD密度或大于6.0×10 5 / cm 3的FPD密度的单晶。由于该单晶具有小的缺陷尺寸，因此通过在含有氢气的非氧化性气氛中的热处理而使缺陷的溶解速度增加，因此氢热处理的效果可以延伸至3μm以上的深度 m。

3. 发明授权

US06273944B1 Silicon wafer for hydrogen heat treatment and method for manufacturing the same 有权
标题翻译：氢热处理用硅片及其制造方法
公开(公告)号：US06273944B1
公开(公告)日：2001-08-14
申请号：US09544556
申请日：2000-04-06
申请人： Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
发明人： Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
IPC分类号： C30B1520
CPC分类号： C30B33/02 , C30B29/06 , C30B33/00
摘要： In growing silicon single crystals by the CZ method, the cooling rate in the 1150-1080° C. temperature zone (defect-forming temperature range) where the grown-in defects are formed is set at more than 2.0° C./min to manufacture single crystals having an as-grown LSTD density of larger than 3.0×106/cm3 or a FPD density of larger than 6.0×105/cm3. As this single crystal has a small defect size, thus the dissolution rate of the defects increases by the heat treatment in a non-oxidizing atmosphere containing a hydrogen gas, so the effect of the hydrogen heat treatment can extend to the depth more than 3 &mgr;m from the wafer surface.
摘要翻译：在通过CZ法生长硅单晶的过程中，形成生长缺陷的1150-1080℃温度区（缺陷形成温度范围）的冷却速度设定在2.0C / min以上以制造单具有大于3.0×10 6 / cm 3的生长的LSTD密度或大于6.0×10 5 / cm 3的FPD密度的晶体。由于该单晶具有小的缺陷尺寸，因此通过在含有氢气的非氧化性气氛中的热处理，缺陷的溶解速度增加，因此氢热处理的效果可以延伸至3μm以上的深度从晶片表面

4. 发明申请

US20060016387A1 Silicon wafer, its manufacturing method, and its manufacturing apparatus 审中-公开
标题翻译：硅晶片及其制造方法及其制造装置
公开(公告)号：US20060016387A1
公开(公告)日：2006-01-26
申请号：US10534946
申请日：2003-11-14
申请人： Takashi Yokoyama , Koji Yoshihara , Toshiaki Saishoji , Kozo Nakamura , Ryota Suewa
发明人： Takashi Yokoyama , Koji Yoshihara , Toshiaki Saishoji , Kozo Nakamura , Ryota Suewa
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B15/203 , C30B15/14 , C30B15/206 , C30B29/06
摘要： The production yield about defect free devices is improved by so controlling the size and density of void defects that they are under predetermined levels without marring the productivity. The pull-up speed V of a silicon crystal (10) by a pull-up mechanism (4) is controlled, and the rate of cooling by a cooler (30) is also controlled. As a result, the axial temperature gradient G1 at and near the melting point of the silicon crystal (10) is increased. The growth condition V/G1 is lowered to a temperature near the critical value under the condition that the growth rate V lies in the range from 97% to 75% of the limit rate Vmax and that the solid-liquid interface is convex with respect to the melt surface. Thus a silicon crystal (10) is grown by pulling up.
摘要翻译：通过如此控制空隙缺陷的尺寸和密度，使其无缺陷的器件的生产率得到改善，而不损害生产率。通过上拉机构（4）控制硅晶体（10）的上拉速度V，并且还控制冷却器（30）的冷却速度。结果，硅晶体（10）的熔点和附近的轴向温度梯度G 1升高。在生长速度V处于极限速率Vmax的97％至75％的范围内，将生长条件V / G 1降低到接近临界值的温度，固体液体界面相对于熔体表面是凸的。因此，通过拉起来生长硅晶体（10）。

5. 发明申请

US20090210166A1 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal 有权
标题翻译：用于预测硅单晶中氧的沉淀行为的方法，用于确定硅单晶生产参数的方法，以及储存用于预测硅单晶中氧沉淀行为的程序
公开(公告)号：US20090210166A1
公开(公告)日：2009-08-20
申请号：US10586445
申请日：2005-01-27
申请人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： G06F19/00
CPC分类号： C30B15/206 , C30B29/06 , C30B33/02 , H01L21/3225
摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
摘要翻译：通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率在硅单晶中进行热处理的同时测定硅单晶。此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

6. 发明授权

US07141113B1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer 有权
标题翻译：单晶硅的制造方法和单晶锭的制造装置以及硅晶片的热处理方法
公开(公告)号：US07141113B1
公开(公告)日：2006-11-28
申请号：US09856212
申请日：1999-11-19
申请人： Kozo Nakamura , Toshiaki Saishoji , Hirotaka Nakajima , Shinya Sadohara , Masashi Nishimura , Toshirou Kotooka , Yoshiyuki Shimanuki
发明人： Kozo Nakamura , Toshiaki Saishoji , Hirotaka Nakajima , Shinya Sadohara , Masashi Nishimura , Toshirou Kotooka , Yoshiyuki Shimanuki
IPC分类号： C30B33/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., be G (° C./mm), V/G ranges from 0.16 to 0.18 mm2/° C. min between a crystal center position and a crystal outer periphery position, and a ratio G outer/G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., at a crystal outer surface to that at a crystal center is set to up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, wherein an oxygen concentration is controlled to up to 13×1017 atoms/cm3, an initial heat treatment temperature is at least up to 500° C. and a temperature is raised at up to 1° C./min at least within 700 to 900° C., thereby making uniform a wafer radial distribution to an arbitrary oxygen precipitation density level.
摘要翻译：一种通过切克劳斯基法生长硅晶体的方法，其中，拉伸速度为V（mm / min），拉伸轴方向的晶体内温度梯度的平均值在温度范围内，硅熔点至1350℃，为G（℃/ mm），V / G在晶体中心位置和晶体外周位置之间的范围为0.16至0.18mm 2 /℃，以及在温度范围内的牵引轴方向的晶体内温度梯度的平均值G的比G外部/ G中心，硅熔点为1350℃，晶体外表面与晶体的晶体温度梯度中心设置为1.10，从而获得高质量的完美晶体硅晶片。这种完美的晶体硅晶片，其中氧浓度被控制到高达13×10 17原子/ cm 3，初始热处理温度至少高达500℃ 并且在至少在700至900℃之间将温度升至高达1℃/分钟，从而使得晶片的径向分布均匀到任意的氧析出浓度水平。

7. 发明授权

US08246744B2 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal 有权
标题翻译：用于预测硅单晶中氧的沉淀行为的方法，用于确定硅单晶生产参数的方法，以及储存用于预测硅单晶中氧沉淀行为的程序
公开(公告)号：US08246744B2
公开(公告)日：2012-08-21
申请号：US10586445
申请日：2005-01-27
申请人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： C30B29/06
CPC分类号： C30B15/206 , C30B29/06 , C30B33/02 , H01L21/3225
摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
摘要翻译：通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率在硅单晶中进行热处理的同时测定硅单晶。此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

8. 发明授权

US06869478B2 Method for producing silicon single crystal having no flaw 有权
标题翻译：无裂纹的硅单晶的制造方法
公开(公告)号：US06869478B2
公开(公告)日：2005-03-22
申请号：US10239593
申请日：2001-03-19
申请人： Kozo Nakamura , Toshiaki Saishoji , Shinji Togawa , Toshirou Kotooka , Susumu Maeda
发明人： Kozo Nakamura , Toshiaki Saishoji , Shinji Togawa , Toshirou Kotooka , Susumu Maeda
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/22 , H01L21/208 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1004 , Y10T117/1008 , Y10T117/1068
摘要： A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.
摘要翻译：一种在宽范围的区域内产生无缺陷的硅锭的稳定性和再现性的方法，其中当硅单晶（11）由硅熔体（13）拉出时，固液界面的形状（14），其中硅熔体（13）和硅单晶（11）之间的边界以及在被拉起的单晶的侧面（11b）上的温度分布被适当地控制。

9. 发明授权

US5948159A Method of controlling defects of a silicon single crystal 失效
标题翻译：控制硅单晶缺陷的方法
公开(公告)号：US5948159A
公开(公告)日：1999-09-07
申请号：US44125
申请日：1998-03-19
申请人： Kozo Nakamura , Toshiaki Saishoji , Toshimichi Kubota
发明人： Kozo Nakamura , Toshiaki Saishoji , Toshimichi Kubota
IPC分类号： C30B15/00 , C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： When the silicon single crystal is pulled up, the nucleation rate of the void cluster is obtained from the forming energy of the cluster of the vacancies in the silicon single crystal. The growth shrinkage of the cluster is obtained basing on the deviation of the flowing-into amount to the cluster of the vacancies and the self-interstitials, and the pulling-up speed or the temperature distribution of the furnace is modified to inhibit the growth of the cluster so as to inhibit the grown-in defects of the silicon single crystal.
摘要翻译：当单晶硅被拉起时，空穴簇的成核速率由硅单晶中的空位簇的形成能获得。基于流入量与空位簇和自填隙量的偏差获得簇的生长收缩率，并且修改炉的提升速度或温度分布以抑制生长从而抑制硅单晶的成长缺陷。

10. 发明授权

US6042646A Simple method for detecting temperature distributions in single crystals and method for manufacturing silicon single crystals by employing the simple method 失效
标题翻译：采用简单方法检测单晶温度分布的简单方法及单晶硅制造方法
公开(公告)号：US6042646A
公开(公告)日：2000-03-28
申请号：US15515
申请日：1998-01-29
申请人： Fumitaka Ishikawa , Toshiaki Saishoji , Kozo Nakamura
发明人： Fumitaka Ishikawa , Toshiaki Saishoji , Kozo Nakamura
IPC分类号： C30B15/00 , C30B15/14 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1004 , Y10T117/1008
摘要： A single crystal is pulled to a length at which the beginning of the body of the single crystal is assumed sufficiently to have been cooled down to a temperature below 1000.degree. C.; then the single crystal being pulled is detached from the molten silicon by pulling it at a speed high enough to cut it out from the molten silicon. Then oxygen precipitation heat-treatment is performed on the single crystal to locate the portion of AOP. AOP arises at the boundary of grown-in defects being formed zone while the single crystal passes through 1100.degree. C., and the position is at about 1100.degree. C. immediately before, detaching the single crystal out from the molten silicon. Therefore, the position at temperature 1100.degree. C. in the single crystal immediately before detaching the single crystal out from the molten silicon are known, then the temperature distributions of the single crystal immediately before detaching it out from the molten silicon can be decided easily. If the speed at which the temperature range near 1100.degree. C. is passed through is controlled, then the occurrence of the defects while growing the single crystal can be controlled.
摘要翻译：将单晶拉至一定长度，在该长度下，假定单晶体的开始充分地冷却至低于1000℃的温度; 然后通过以足够高的速度将熔融硅从熔融硅中分离出来，将其从熔融硅中切出。然后在单晶上进行氧沉淀热处理以定位AOP的部分。在单晶通过1100℃时，在形成区域的生长缺陷的边界处产生AOP，并且立即在约1100℃的位置处将单晶从熔融硅中分离出来。因此，在将单晶从熔融硅中分离出来之前，在单晶中的1100℃的位置是已知的，因此可以容易地决定将其从熔融硅中分离出来之前的单晶的温度分布。如果通过1100℃附近的温度的速度被控制，则可以控制生长单晶时的缺陷的发生。

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