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    • 2. 发明申请
    • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20080003770A1
    • 2008-01-03
    • US11768061
    • 2007-06-25
    • Hiroyuki EnomotoShoichi UnoSeiko IshiharaTakashi Yahata
    • Hiroyuki EnomotoShoichi UnoSeiko IshiharaTakashi Yahata
    • H01L21/76
    • G01S7/52079G01S7/5208
    • An insulating film on a semiconductor substrate has a first titanium nitride film, an aluminum film, and a second titanium nitride film formed thereon, and an insulating film is formed so as to cover a lower electrode wiring. Then, the insulating film is dry-etched anisotropically so that the insulating film on the lower electrode wiring is removed, and a portion of the insulating film on the lower electrode wiring is left as a sidewall. A deposit deposited during the etching of the insulating film on the lower electrode wiring is removed by radical etching without using ion bombardment. The deposit contains Ti that is a metal element forming the second titanium nitride film. Subsequently, the second titanium nitride film is nitrided through ammonium plasma, and an insulating film to cover the lower electrode wiring is formed.
    • 半导体衬底上的绝缘膜具有形成在其上的第一氮化钛膜,铝膜和第二氮化钛膜,并且形成绝缘膜以覆盖下电极布线。 然后,各向异性地对绝缘膜进行干法蚀刻,从而去除下部电极布线上的绝缘膜,并且将下部电极布线上的绝缘膜的一部分留作侧壁。 通过自由基蚀刻除去在下电极布线上的绝缘膜的蚀刻期间沉积的沉积物,而不使用离子轰击。 该沉积物含有作为形成第二氮化钛膜的金属元素的Ti。 随后,通过铵等离子体氮化第二氮化钛膜,形成覆盖下电极布线的绝缘膜。
    • 3. 发明授权
    • Image correction apparatus, image correction method and storage medium for image correction program
    • 图像校正装置,图像校正方法和用于图像校正程序的存储介质
    • US08106962B2
    • 2012-01-31
    • US12565841
    • 2009-09-24
    • Takashi Yahata
    • Takashi Yahata
    • H04N5/235H04N9/73H04N5/222
    • H04N1/6086H04N9/735H04N19/60
    • An image correction apparatus comprises an image capture unit configured to capture image data, a separator unit configured to separate the image data into luminance data and color-difference data, a conversion unit configured to convert the color-difference data into a set of amplitude values in a spatial frequency domain, a light-source state detector configured to detect a light-source state when the image capture unit captures the image data, a correction unit configured to correct the set of amplitude values based on the light-source state so that a predetermined amplitude value is decreased, an inverse-conversion unit configured to inversely convert the set of the amplitude values which is corrected by the correction unit to produce corrected color-difference data, and a corrected image generator configured to generate corrected image data from the corrected color-difference data and the luminance data.
    • 图像校正装置包括被配置为捕获图像数据的图像捕获单元,被配置为将图像数据分离为亮度数据和色差数据的分离单元,被配置为将色差数据转换为一组幅度值的转换单元 在空间频域中,光源状态检测器,被配置为当图像捕获单元捕获图像数据时检测光源状态;校正单元,被配置为基于光源状态校正所述一组振幅值,使得 减小规定的振幅值,逆变换单元,被配置为对由校正单元校正的振幅值的集合进行逆变换,以产生校正的色差数据;校正后的图像生成器,被配置为从 校正色差数据和亮度数据。
    • 5. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07754595B2
    • 2010-07-13
    • US11768061
    • 2007-06-25
    • Hiroyuki EnomotoShoichi UnoSeiko IshiharaTakashi Yahata
    • Hiroyuki EnomotoShoichi UnoSeiko IshiharaTakashi Yahata
    • H01L21/44
    • G01S7/52079G01S7/5208
    • An insulating film on a semiconductor substrate has a first titanium nitride film, an aluminum film, and a second titanium nitride film formed thereon, and an insulating film is formed so as to cover a lower electrode wiring. Then, the insulating film is dry-etched anisotropically so that the insulating film on the lower electrode wiring is removed, and a portion of the insulating film on the lower electrode wiring is left as a sidewall. A deposit deposited during the etching of the insulating film on the lower electrode wiring is removed by radical etching without using ion bombardment. The deposit contains Ti that is a metal element forming the second titanium nitride film. Subsequently, the second titanium nitride film is nitrided through ammonium plasma, and an insulating film to cover the lower electrode wiring is formed.
    • 半导体衬底上的绝缘膜具有形成在其上的第一氮化钛膜,铝膜和第二氮化钛膜,并且形成绝缘膜以覆盖下电极布线。 然后,各向异性地对绝缘膜进行干法蚀刻,从而去除下部电极布线上的绝缘膜,并且将下部电极布线上的绝缘膜的一部分留作侧壁。 通过自由基蚀刻除去在下电极布线上的绝缘膜的蚀刻期间沉积的沉积物,而不使用离子轰击。 该沉积物含有作为形成第二氮化钛膜的金属元素的Ti。 随后,通过铵等离子体氮化第二氮化钛膜,形成覆盖下电极布线的绝缘膜。
    • 6. 发明申请
    • IMAGE CORRECTION APPARATUS, IMAGE CORRECTION METHOD AND STORAGE MEDIUM FOR IMAGE CORRECTION PROGRAM
    • 图像校正装置,图像校正方法和图像校正程序存储介质
    • US20100079614A1
    • 2010-04-01
    • US12565841
    • 2009-09-24
    • Takashi Yahata
    • Takashi Yahata
    • H04N9/73G06K9/00
    • H04N1/6086H04N9/735H04N19/60
    • An image correction apparatus comprises an image capture unit configured to capture image data, a separator unit configured to separate the image data into luminance data and color-difference data, a conversion unit configured to convert the color-difference data into a set of amplitude values in a spatial frequency domain, a light-source state detector configured to detect a light-source state when the image capture unit captures the image data, a correction unit configured to correct the set of amplitude values based on the light-source state so that a predetermined amplitude value is decreased, an inverse-conversion unit configured to inversely convert the set of the amplitude values which is corrected by the correction unit to produce corrected color-difference data, and a corrected image generator configured to generate corrected image data from the corrected color-difference data and the luminance data.
    • 图像校正装置包括被配置为捕获图像数据的图像捕获单元,被配置为将图像数据分离为亮度数据和色差数据的分离单元,被配置为将色差数据转换为一组幅度值的转换单元 在空间频域中,光源状态检测器,被配置为当图像捕获单元捕获图像数据时检测光源状态;校正单元,被配置为基于光源状态校正所述一组振幅值,使得 减小规定的振幅值,逆变换单元,被配置为对由校正单元校正的振幅值的集合进行逆变换,以产生校正的色差数据;校正后的图像生成器,被配置为从 校正色差数据和亮度数据。