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    • 1. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07754595B2
    • 2010-07-13
    • US11768061
    • 2007-06-25
    • Hiroyuki EnomotoShoichi UnoSeiko IshiharaTakashi Yahata
    • Hiroyuki EnomotoShoichi UnoSeiko IshiharaTakashi Yahata
    • H01L21/44
    • G01S7/52079G01S7/5208
    • An insulating film on a semiconductor substrate has a first titanium nitride film, an aluminum film, and a second titanium nitride film formed thereon, and an insulating film is formed so as to cover a lower electrode wiring. Then, the insulating film is dry-etched anisotropically so that the insulating film on the lower electrode wiring is removed, and a portion of the insulating film on the lower electrode wiring is left as a sidewall. A deposit deposited during the etching of the insulating film on the lower electrode wiring is removed by radical etching without using ion bombardment. The deposit contains Ti that is a metal element forming the second titanium nitride film. Subsequently, the second titanium nitride film is nitrided through ammonium plasma, and an insulating film to cover the lower electrode wiring is formed.
    • 半导体衬底上的绝缘膜具有形成在其上的第一氮化钛膜,铝膜和第二氮化钛膜,并且形成绝缘膜以覆盖下电极布线。 然后,各向异性地对绝缘膜进行干法蚀刻,从而去除下部电极布线上的绝缘膜,并且将下部电极布线上的绝缘膜的一部分留作侧壁。 通过自由基蚀刻除去在下电极布线上的绝缘膜的蚀刻期间沉积的沉积物,而不使用离子轰击。 该沉积物含有作为形成第二氮化钛膜的金属元素的Ti。 随后,通过铵等离子体氮化第二氮化钛膜,形成覆盖下电极布线的绝缘膜。
    • 2. 发明申请
    • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20080003770A1
    • 2008-01-03
    • US11768061
    • 2007-06-25
    • Hiroyuki EnomotoShoichi UnoSeiko IshiharaTakashi Yahata
    • Hiroyuki EnomotoShoichi UnoSeiko IshiharaTakashi Yahata
    • H01L21/76
    • G01S7/52079G01S7/5208
    • An insulating film on a semiconductor substrate has a first titanium nitride film, an aluminum film, and a second titanium nitride film formed thereon, and an insulating film is formed so as to cover a lower electrode wiring. Then, the insulating film is dry-etched anisotropically so that the insulating film on the lower electrode wiring is removed, and a portion of the insulating film on the lower electrode wiring is left as a sidewall. A deposit deposited during the etching of the insulating film on the lower electrode wiring is removed by radical etching without using ion bombardment. The deposit contains Ti that is a metal element forming the second titanium nitride film. Subsequently, the second titanium nitride film is nitrided through ammonium plasma, and an insulating film to cover the lower electrode wiring is formed.
    • 半导体衬底上的绝缘膜具有形成在其上的第一氮化钛膜,铝膜和第二氮化钛膜,并且形成绝缘膜以覆盖下电极布线。 然后,各向异性地对绝缘膜进行干法蚀刻,从而去除下部电极布线上的绝缘膜,并且将下部电极布线上的绝缘膜的一部分留作侧壁。 通过自由基蚀刻除去在下电极布线上的绝缘膜的蚀刻期间沉积的沉积物,而不使用离子轰击。 该沉积物含有作为形成第二氮化钛膜的金属元素的Ti。 随后,通过铵等离子体氮化第二氮化钛膜,形成覆盖下电极布线的绝缘膜。