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    • 3. 发明授权
    • Providing test coverage of integrated ECC logic en embedded memory
    • 提供嵌入式内存的集成ECC逻辑的测试覆盖
    • US08914687B2
    • 2014-12-16
    • US13087808
    • 2011-04-15
    • Spencer M. GoldArun B. Hegde
    • Spencer M. GoldArun B. Hegde
    • G11C29/00G06F11/10G11C29/02G06F11/22G11C29/04
    • G06F11/2215G06F11/1052G06F2217/70G11C29/02G11C2029/0411
    • A method is provided in which a first error test may be performed on a memory that includes an integrated error correcting code (ECC) portion. The functionality of the ECC portion may be bypassed in the first error test. A second error test may be performed on the memory, where the second error test includes testing the functionality of the ECC portion. Also provided is an apparatus including a memory device and an error correcting code (ECC) circuit. The apparatus also includes a first switching device adapted to select a first input signal or a second input signal and a second switching device adapted to select one of a signal from the memory device or a signal from a portion of the ECC circuit. Also provided are computer readable storage devices encoded with data for adapting a manufacturing facility to create the apparatus and for adapting a processor to perform the method above.
    • 提供了一种方法,其中可以对包括集成纠错码(ECC)部分的存储器执行第一错误测试。 在第一个错误测试中可以绕过ECC部分的功能。 可以对存储器执行第二错误测试,其中第二错误测试包括测试ECC部分的功能。 还提供了一种包括存储器件和纠错码(ECC)电路的装置。 该装置还包括适于选择第一输入信号或第二输入信号的第一开关装置和适于从存储装置选择信号之一或来自ECC电路的一部分的信号的第二开关装置。 还提供了用数据编码的计算机可读存储设备,用于使制造设施适配以创建设备并使调适处理器执行上述方法。
    • 5. 发明授权
    • Bit-flipping in memories
    • 记忆中的位翻转
    • US09047981B2
    • 2015-06-02
    • US13724924
    • 2012-12-21
    • Arun B. HegdeSpencer M. GoldThomas E. Ryan
    • Arun B. HegdeSpencer M. GoldThomas E. Ryan
    • G11C7/04G11C11/419
    • G11C11/419G11C7/04G11C11/417
    • Data stored in SRAM cells are periodically flipped e.g., before long idle periods. Operating the memories in both a ‘flipped’ mode and a ‘non-flipped’ mode helps cause the Bias Temperature Instability (BTI) degradation to be symmetric, thereby not degrading the Static Noise Margin (SNM) degradation of the cells. The data stored in memory locations is flipped by reading out the data, inverting the read out data, and writing the inverted read out data into the memory locations until the memory locations of the SRAM have been read out and written. When the memory operates in flipped mode, data read from and written into the memory is inverted to maintain transparency to the memory user. After operating the data in flipped mode for a period of time, the flipped data stored in the memory is reflipped to operate in the non-flipped mode.
    • 存储在SRAM单元中的数据例如在长时间的空闲周期之前被周期性翻转。 以“翻转”模式和“非翻转”模式操作存储器有助于使偏置温度不稳定(BTI)劣化成对称,从而不会降低单元的静态噪声余量(SNM)降级。 存储在存储单元中的数据通过读出数据,反转读出数据以及将反相读出数据写入到存储器位置来翻转,直到SRAM的存储器位置被读出和写入。 当存储器以翻转模式操作时,从存储器读取和写入存储器的数据被反转以保持对存储器用户的透明度。 在经过一段时间的翻转模式下操作数据之后,将存储在存储器中的翻转数据重新提供以非翻转模式操作。
    • 9. 发明申请
    • PROVIDING TEST COVERAGE OF INTEGRATED ECC LOGIC EN EMBEDDED MEMORY
    • 提供集成ECC逻辑嵌入式存储器的测试覆盖
    • US20120266033A1
    • 2012-10-18
    • US13087808
    • 2011-04-15
    • Spencer M. GoldArun B. Hegde
    • Spencer M. GoldArun B. Hegde
    • G06F11/00G06F17/50
    • G06F11/2215G06F11/1052G06F2217/70G11C29/02G11C2029/0411
    • A method is provided in which a first error test may be performed on a memory that includes an integrated error correcting code (ECC) portion. The functionality of the ECC portion may be bypassed in the first error test. A second error test may be performed on the memory, where the second error test includes testing the functionality of the ECC portion. Also provided is an apparatus including a memory device and an error correcting code (ECC) circuit. The apparatus also includes a first switching device adapted to select a first input signal or a second input signal and a second switching device adapted to select one of a signal from the memory device or a signal from a portion of the ECC circuit. Also provided are computer readable storage devices encoded with data for adapting a manufacturing facility to create the apparatus and for adapting a processor to perform the method above.
    • 提供了一种方法,其中可以对包括集成纠错码(ECC)部分的存储器执行第一错误测试。 在第一个错误测试中可以绕过ECC部分的功能。 可以对存储器执行第二错误测试,其中第二错误测试包括测试ECC部分的功能。 还提供了一种包括存储器件和纠错码(ECC)电路的装置。 该装置还包括适于选择第一输入信号或第二输入信号的第一开关装置和适于从存储装置选择信号之一或来自ECC电路的一部分的信号的第二开关装置。 还提供了用数据编码的计算机可读存储设备,用于使制造设施适配以创建设备并使调适处理器执行上述方法。