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1. 发明申请

US20050145873A1 Light-emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：US20050145873A1
公开(公告)日：2005-07-07
申请号：US10750784
申请日：2004-01-03
申请人： Shyi-Ming Pan , Fen-Ren Chien , Lung-Chien Chen
发明人： Shyi-Ming Pan , Fen-Ren Chien , Lung-Chien Chen
IPC分类号： H01L33/06 , H01L33/12 , H01L33/14 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/007
摘要： A light-emitting diode device is provided with the following manufacturing method: forming an n-GaN layer on a substrate; growing an SiO2 layer on the n-GaN surface, and using the photo-lithography process to expose the n-GaN within the mesa area; using MOCVD to grow an LED structure in the epitaxy within the mesa area, the formed structure being a p-n coplanar structure due to the selective area characteristic; and finally, forming the electrodes on the structure to complete an LED device. The device can be manufactured without the etching process to form the p-n coplanar structure. In comparison to other conventional manufacturing methods, the method simplifies the manufacturing process, and avoids many problems associated with etching, including non-uniform etching, overly rough surface, etching damages, and current leakage. Furthermore, SiO2 is used as a scattering layer to prevent emitted light from internally reflected, and therefore, improves the external quantum efficiency.
摘要翻译：一种发光二极管器件具有以下制造方法：在衬底上形成n-GaN层; 在n-GaN表面上生长SiO 2层，并使用光刻工艺在台面区域内露出n-GaN; 使用MOCVD在台面区域内的外延生长LED结构，由于选择区域特性，形成的结构是p-n共面结构; 最后，在结构上形成电极以完成LED器件。可以在没有蚀刻工艺的情况下制造器件以形成p-n共面结构。与其他常规制造方法相比，该方法简化了制造工艺，并且避免了与蚀刻相关的许多问题，包括不均匀蚀刻，过度粗糙的表面，蚀刻损伤和电流泄漏。此外，使用SiO 2作为散射层以防止发射的光从内部反射，因此提高了外部量子效率。

2. 发明申请

US20060163682A1 Semiconducting photo detector structure 审中-公开
标题翻译：半导体光电探测器结构
公开(公告)号：US20060163682A1
公开(公告)日：2006-07-27
申请号：US11041492
申请日：2005-01-22
申请人： Shyi-Ming Pan , Fen-Ren Chien
发明人： Shyi-Ming Pan , Fen-Ren Chien
IPC分类号： H01L27/14
CPC分类号： H01L31/1035 , H01L31/022408 , H01L31/105
摘要： An epitaxial structure for semiconducting photo detectors is provided. The epitaxial structure contains a substrate having a built-in electric circuit, a first and second metallic layers on top of said substrate electrically connected to the corresponding electrical input and output points of the substrate's electric circuit, and a semiconducting photo detecting element as the topmost part for receiving incident lights.
摘要翻译：提供了一种用于半导体光电探测器的外延结构。外延结构包含具有内置电路的基板，在所述基板的顶部上电连接到基板的电路的对应电输入和输出点的第一和第二金属层，以及作为最上层的半导体光检测元件部分接收入射灯。

3. 发明授权

US07374958B2 Light emitting semiconductor bonding structure and method of manufacturing the same 有权
标题翻译：发光半导体结合结构及其制造方法
公开(公告)号：US07374958B2
公开(公告)日：2008-05-20
申请号：US11380209
申请日：2006-04-26
申请人： Shyi-Ming Pan , Fen-Ren Chien
发明人： Shyi-Ming Pan , Fen-Ren Chien
IPC分类号： H01L21/00 , H01L21/44 , H01L33/00 , H01L20/22 , H01L27/15 , H01L29/267
CPC分类号： H01L25/167 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/16
摘要： A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. A first metallic layer and a second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer are bonded onto the N electrode layer and the P electrode layer respectively through supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.
摘要翻译：发光半导体接合结构包括通过将衬底接合到发光半导体上而形成的结构。基板是包含电路的结构。欧姆接触N电极层和P电极层分别形成在发光半导体的N型接触层和P型接触层上。通过浸镀或沉积在基板的表面上形成第一金属层和第二金属层。金属层电连接到基板的电路的相应的电信号输入/输出节点。第一金属层和第二金属层通过超声波焊接分别接合在N电极层和P电极层上，并且因此将发光半导体结合到基板上，从而实现电连接。

4. 发明申请

US20070246711A1 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US20070246711A1
公开(公告)日：2007-10-25
申请号：US11409003
申请日：2006-04-24
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

5. 发明申请

US20070176182A1 Structure for integrating LED circuit onto heat-dissipation substrate 审中-公开
标题翻译：将LED电路集成到散热基板上的结构
公开(公告)号：US20070176182A1
公开(公告)日：2007-08-02
申请号：US11340660
申请日：2006-01-27
申请人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Chih-Wei Chiang , Yin-Cheng Chu , Huan-Che Tseng , Fen-Ren Chien
发明人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Chih-Wei Chiang , Yin-Cheng Chu , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L33/64 , H01L2224/73265 , H05K1/0203 , H05K1/182 , H01L2224/48091 , H01L2924/00014
摘要： A structure for integrating LED circuit onto a heat-dissipation substrate is disclosed. At least an electronic component and a LED chip are integrated on a heat-dissipation substrate. The electronic component can be a passive component, a drive chip, an electrostatic discharge protection device, or a sensing component. Therefore, both wire-bonding area of the LED chip and the series resistance of wires are reduced while the heat dissipation efficiency is enhanced.
摘要翻译：公开了一种将LED电路集成到散热基板上的结构。至少电子部件和LED芯片集成在散热基板上。电子部件可以是无源部件，驱动芯片，静电放电保护装置或感测部件。因此，LED芯片的引线接合面积和电线的串联电阻降低，同时散热效率提高。

6. 发明授权

US08263991B2 Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof 有权
标题翻译：发光氮化镓系III-V族化合物半导体器件及其制造方法
公开(公告)号：US08263991B2
公开(公告)日：2012-09-11
申请号：US11979963
申请日：2007-11-13
申请人： Kuo-Chin Huang , Shyi-Ming Pan , Cheng-Kuo Huang , Chi-Yang Chuang , Fen-Ren Chien
发明人： Kuo-Chin Huang , Shyi-Ming Pan , Cheng-Kuo Huang , Chi-Yang Chuang , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/46
摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
摘要翻译：公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。因此，电流在导电层上有效地分布。因此，提高了LED的亮度和效率。此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。

7. 发明申请

US20090275156A1 Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof 审中-公开
标题翻译：发光氮化镓系III-V族化合物半导体器件及其制造方法
公开(公告)号：US20090275156A1
公开(公告)日：2009-11-05
申请号：US12458482
申请日：2009-07-14
申请人： Kuo-Chin Huang , Shyi-Ming Pan , Cheng-Kuo Huang , Chi-Yang Chuang , Fen-Ren Chien
发明人： Kuo-Chin Huang , Shyi-Ming Pan , Cheng-Kuo Huang , Chi-Yang Chuang , Fen-Ren Chien
IPC分类号： H01L21/20
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/46
摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
摘要翻译：公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。因此，电流在导电层上有效地分布。因此，提高了LED的亮度和效率。此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。

8. 发明授权

US07476912B2 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US07476912B2
公开(公告)日：2009-01-13
申请号：US11409003
申请日：2006-04-24
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

9. 发明申请

US20080241979A1 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US20080241979A1
公开(公告)日：2008-10-02
申请号：US12149288
申请日：2008-04-30
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

10. 发明申请

US20060118806A1 LIGHT EMITTING DIODE PACKAGE 审中-公开
标题翻译：发光二极管封装
公开(公告)号：US20060118806A1
公开(公告)日：2006-06-08
申请号：US10907192
申请日：2005-03-24
申请人： Shyi-Ming Pan , Tsung-Chieh Lin , Fen-Ren Chien
发明人： Shyi-Ming Pan , Tsung-Chieh Lin , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/44
摘要： A light emitting diode (LED) package including a chip carrier, an adhesive layer, a light emitting diode (LED) chip and an anti-aging layer is provided. The adhesive is disposed on the chip carrier. The LED chip having a light emitting layer is adhered on the chip carrier by the adhesive layer, and is electrically connected with the chip carrier. The anti-aging layer is disposed between the adhesive and the chip carrier. In the LED package described above, the light emitted from the LED being illuminated on the adhesive layer is reduced or prevented by the anti-aging layer. Therefore, the aging phenomenon of the LED package is retarded, and the lifetime of the LED package is further enhanced.
摘要翻译：提供了包括芯片载体，粘合剂层，发光二极管（LED）芯片和抗老化层的发光二极管（LED）封装。粘合剂设置在芯片载体上。具有发光层的LED芯片通过粘合剂层粘附在芯片载体上，并与芯片载体电连接。抗老化层设置在粘合剂和芯片载体之间。在上述LED封装中，通过防老化层减少或防止从被照射在粘合剂层上的LED发出的光。因此，LED封装的老化现象被延迟，并且LED封装的寿命进一步提高。

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