专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5998286A Method to grow self-aligned silicon on a poly-gate, source and drain region 失效
标题翻译：在多晶硅，源极和漏极区域生长自对准硅的方法
公开(公告)号：US5998286A
公开(公告)日：1999-12-07
申请号：US48924
申请日：1998-03-26
申请人： Shu-Jen Chen , Jacky Kuo , Jiunn-Hsien Lin , Chih-Ching Hsu
发明人： Shu-Jen Chen , Jacky Kuo , Jiunn-Hsien Lin , Chih-Ching Hsu
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L29/417 , H01L21/283
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518 , H01L21/28525 , H01L29/41775 , H01L29/41783
摘要： The method of the present invention includes forming a MOS on a semiconductor substrate. Subsequently, a silicon-rich metal silicide layer is deposited on the MOS and substrate by using chemical vapor deposition to act as a silicon material source. Then, a thermal process is carried out to separate a portion of the silicon out of the metal silicide layer, thereby forming a silicon layer on top of the gate of the MOS, source/drain. The nest step is to remove the metal suicide layer. A self-aligned metal silicide layer is formed on the silicon layer.
摘要翻译：本发明的方法包括在半导体衬底上形成MOS。随后，通过使用化学气相沉积作为硅材料源，在MOS和衬底上沉积富硅金属硅化物层。然后，进行热处理以将硅的一部分从金属硅化物层分离出来，从而在MOS源极/漏极的栅极顶部形成硅层。嵌套步骤是去除金属硅化物层。在硅层上形成自对准的金属硅化物层。

2. 发明授权

US5924010A Method for simultaneously fabricating salicide and self-aligned barrier 失效
标题翻译：同时制造自对准和自对准屏障的方法
公开(公告)号：US5924010A
公开(公告)日：1999-07-13
申请号：US740512
申请日：1996-10-30
申请人： Shu-Jen Chen , Jiunn-Hsien Lin , Chih-Ching Hsu
发明人： Shu-Jen Chen , Jiunn-Hsien Lin , Chih-Ching Hsu
IPC分类号： H01L21/28 , H01L21/336
CPC分类号： H01L29/665 , H01L21/28052
摘要： A method of fabricating salicide and self-aligned barrier simultaneously is disclosed. The initial steps include sputtering a metal stack (Ti--TiN--Ti) and forming a salicide layer by thermally reacting the metal stack and the wafer followed by a chemical etching which removes the unreacted portions of the metal stack. The portions of the metal stack on Si can react with Si to form a TiSi.sub.2 layer, thus forming TiSi.sub.2 --TiN--TiSi.sub.2. The TiSi.sub.2 layer over the TiN layer acts as a mask in the chemical etching and protects the TiN layer from been etched. The diffusion barrier layer is thus formed simultaneously within the fabricating of salicide.
摘要翻译：公开了一种同时制造自对准屏障的方法。初始步骤包括溅射金属叠层（Ti-TiN-Ti）并通过使金属叠层和晶片热反应，然后通过化学蚀刻形成硅化物层，从而除去金属堆叠体的未反应部分。 Si上的金属堆叠部分可与Si反应形成TiSi2层，从而形成TiSi2-TiN-TiSi2。 TiN层上的TiSi2层用作化学蚀刻中的掩模，并保护TiN层免受蚀刻。因此，在制造硅化物的同时形成扩散阻挡层。

3. 发明授权

US6150264A Method of manufacturing self-aligned silicide 失效
标题翻译：制造自对准硅化物的方法
公开(公告)号：US6150264A
公开(公告)日：2000-11-21
申请号：US075420
申请日：1998-05-08
申请人： Shu-Jen Chen , Ruoh-Haw Chang , Chih-Ching Hsu
发明人： Shu-Jen Chen , Ruoh-Haw Chang , Chih-Ching Hsu
IPC分类号： H01L21/285 , H01L21/44
CPC分类号： H01L21/28518
摘要： The invention relates to a method for manufacturing of a titanium self-aligned silicide (Salicide). This process includes of forming a metal layer over the surfaces of the semiconductor substrate and the gate electrode. Then, a rapid thermal process is performed with three stages to form the salicide, for example, titanium silicide, at the interface between the titanium and silicon, namely on the surfaces of the gate electrode and source/drain region. The rapid thermal process with three stages includes using the first stage with the first temperature to form the early titanium silicide having the C49 phase. The temperature is raised to a second temperature and the RTA process is performed with nitrogen gases to transform the high resistance phase C49 of the titanium nitride into a low resistance phase C54 in the second stage. Then, the temperature is rapidly raised to a third temperature to transform the C49 phase into the C54 phase completely and to prevent the agglomeration phenomenon.
摘要翻译：本发明涉及钛自对准硅化物（硅化物）的制造方法。该方法包括在半导体衬底和栅电极的表面上形成金属层。然后，以三个阶段进行快速热处理，以在钛和硅之间的界面，即在栅电极和源极/漏极区的表面上形成硅化物，例如硅化钛。具有三个阶段的快速热处理包括使用具有第一温度的第一阶段形成具有C49相的早期硅化钛。将温度升至第二温度，并用氮气进行RTA处理，以将氮化钛的高电阻相C49转化为第二阶段的低电阻相C54。然后，将温度迅速升至第三温度，以使C49相完全转化为C54相，并防止凝聚现象。

4. 发明授权

US08211909B2 Treatment of antibiotic-resistant bacteria infection 有权
标题翻译：治疗抗生素耐药细菌感染
公开(公告)号：US08211909B2
公开(公告)日：2012-07-03
申请号：US12206060
申请日：2008-09-08
申请人： Ming-Chu Hsu , Chi-Hsin Richard King , Shu-Jen Chen , Luke Lin
发明人： Ming-Chu Hsu , Chi-Hsin Richard King , Shu-Jen Chen , Luke Lin
IPC分类号： A61K31/47
CPC分类号： A61K31/4709
摘要： This invention relates to a method of treating infection by methicillin-nonsusceptibale bacteria, vancomycin-nonsusceptibale bacteria, penicillin-nonsusceptibale bacteria, clarithromycin-nonsusceptibale bacteria, or metronidazole-nonsusceptibale bacteria by administering to a subject in need thereof an effective amount of a compound of the following formula:
摘要翻译：本发明涉及一种通过向有需要的受试者施用有效量的化合物的方法来治疗甲氧西林非感染性细菌，万古霉素 - 非感染性细菌，青霉素 - 非吸收性细菌，克拉霉素 - 非吸收性细菌或甲硝唑 - 非吸收性细菌的感染，以下公式：

5. 发明授权

US07396838B2 Use of 1H-indol-3-yl-2-oxoacetamide compounds 有权
标题翻译：使用1H-吲哚-3-基-2-氧代乙酰胺化合物
公开(公告)号：US07396838B2
公开(公告)日：2008-07-08
申请号：US11145628
申请日：2005-06-06
申请人： Chiung-Tong Chen , Shu-Jen Chen , Ming-Chu Hsu , Der-Ren Hwang , Wen-Tai Li , Chu-Chung Lin
发明人： Chiung-Tong Chen , Shu-Jen Chen , Ming-Chu Hsu , Der-Ren Hwang , Wen-Tai Li , Chu-Chung Lin
IPC分类号： A01N43/42 , A01N43/82 , A01N43/78 , A01N43/80 , A01N43/64 , A01N43/38 , A61K31/47 , A61K31/41 , A61K31/425 , A61K31/42 , A61K31/40 , C07D217/00 , C07D215/38 , C07D417/00 , C07D263/00 , C07D413/00 , C07D261/04 , C07D261/14 , C07D405/00 , C07D409/00 , C07D411/00
CPC分类号： C07D401/12 , C07D403/12 , C07D409/14 , C07D417/12 , C07D417/14
摘要： A method of treating cancer including administering to a subject in need thereof an effective amount of a compound of the formula 1: wherein R1, R2, R3, R4, and n are as defined herein.
摘要翻译：一种治疗癌症的方法，包括向有需要的受试者施用有效量的式1化合物：其中R 1，R 2，R 3， R 4，R 4和n如本文所定义。

6. 发明授权

US07378524B2 Aminoquinoline compounds 失效
标题翻译：氨基喹啉化合物
公开(公告)号：US07378524B2
公开(公告)日：2008-05-27
申请号：US10953937
申请日：2004-09-29
申请人： Chu-Chung Lin , Jen-Fuh Liu , Chih-Wei Chang , Shu-Jen Chen , Yibin Xiang , Pei-Chin Cheng , Jiing-Jyh Jan
发明人： Chu-Chung Lin , Jen-Fuh Liu , Chih-Wei Chang , Shu-Jen Chen , Yibin Xiang , Pei-Chin Cheng , Jiing-Jyh Jan
IPC分类号： C07D215/38
CPC分类号： C07D401/14 , A61K31/4745 , A61K31/519 , C07D215/42 , C07D215/44 , C07D215/46 , C07D219/12 , C07D221/16 , C07D401/12 , C07D409/14 , C07D413/14 , C07D417/12 , C07D417/14 , C07D471/04
摘要： This invention relates to treating inflammatory and immune diseases with certain aminoquinoline compounds that bind to CXCR3 receptors. The aminoquinoline compounds are covered by the formula (I) shown below. Each variable is defined in the specification.
摘要翻译：本发明涉及用与CXCR3受体结合的某些氨基喹啉化合物治疗炎症和免疫疾病。氨基喹啉化合物被下面所示的式（I）覆盖。每个变量在规范中定义。

7. 发明申请

US20080058382A1 POLYAMINE COMPOUNDS 失效
标题翻译：聚氨酯化合物
公开(公告)号：US20080058382A1
公开(公告)日：2008-03-06
申请号：US11834204
申请日：2007-08-06
申请人： Chi-Feng Yen , Chi-Hsin King , Hua-Chien Chen , Gholam Hakimelahi , Shu-Jen Chen , Ying-Huey Huang , Chien-Huang Wu
发明人： Chi-Feng Yen , Chi-Hsin King , Hua-Chien Chen , Gholam Hakimelahi , Shu-Jen Chen , Ying-Huey Huang , Chien-Huang Wu
IPC分类号： A61K31/44 , A61P19/02 , A61P19/10 , A61P25/28 , C07D401/00
CPC分类号： C07D207/335 , A61K31/135 , A61K31/15 , A61K31/165 , A61K31/195 , A61K31/44 , A61K31/445 , C07C211/27 , C07C211/29 , C07C211/30 , C07D209/08 , C07D213/38 , C07D213/42 , C07D213/74 , C07D235/14 , C07D257/02 , C07D333/18 , C07D401/14 , C07D409/14 , C07D471/04
摘要： This invention relates to methods for treating retinopathy and repairing tissue damage. The methods include administering to a subject in need thereof an effective amount of one or more compounds of the following formula. Each variable in this formula is defined in the specification.
摘要翻译：本发明涉及治疗视网膜病变和修复组织损伤的方法。所述方法包括向有需要的受试者施用有效量的一种或多种下列化合物。该公式中的每个变量在规范中定义。

8. 发明授权

US06462390B1 Multi-film capping layer for a salicide process 有权
标题翻译：用于自杀过程的多层覆盖层
公开(公告)号：US06462390B1
公开(公告)日：2002-10-08
申请号：US09672234
申请日：2000-09-27
申请人： Ming-Shing Chen , Shu-Jen Chen , Jy-Hwang Lin , Kuen-Syh Tseng
发明人： Ming-Shing Chen , Shu-Jen Chen , Jy-Hwang Lin , Kuen-Syh Tseng
IPC分类号： H01L21336
CPC分类号： H01L29/665 , H01L21/28044 , H01L29/4933
摘要： A multi-film capping layer having a cobalt layer, a barrier layer, and a stuffing layer is disclosed, wherein the barrier layer isolates the cobalt layer from the stuffing layer. The multi-film capping layer is formed on a gate transistor and applicable to a self-aligned silicide (salicide) process, so that a sheet resistance of the salicide layer on conductive regions of the gate transistor is significantly reduced. The stuffing layer further prevents entry of oxygen or moisture to the salicide layer, thus no cobalt oxide is formed when RTP is performed. Without formation of the cobalt oxide, the salicide process is free from the bridging issue and the filament issue.
摘要翻译：公开了具有钴层，阻挡层和填充层的多层覆盖层，其中阻挡层将钴层与填料层隔离。多层覆盖层形成在栅极晶体管上并且可应用于自对准硅化物（自对准硅化物）工艺，使得栅极晶体管的导电区域上的自对准硅化物层的薄层电阻显着降低。填充层进一步防止氧化物或水分进入自对准硅化物层，因此在进行RTP时不会形成氧化钴。不形成氧化钴，自对准硅化物工艺没有桥接问题和灯丝问题。

9. 发明授权

US07662834B2 Methods of 1H-indol-3-yl-2-oxoacetamide compounds 有权
标题翻译： 1H-吲哚-3-基-2-氧代乙酰胺化合物的方法
公开(公告)号：US07662834B2
公开(公告)日：2010-02-16
申请号：US12132254
申请日：2008-06-03
申请人： Chiung-Tong Chen , Shu-Jen Chen , Ming-Chu Hsu , Der-Ren Hwang , Wen-Tai Li , Chu-Chung Lin
发明人： Chiung-Tong Chen , Shu-Jen Chen , Ming-Chu Hsu , Der-Ren Hwang , Wen-Tai Li , Chu-Chung Lin
IPC分类号： A01N43/42 , A61K31/47 , A61K31/44 , A61K31/425 , A01N43/80
CPC分类号： C07D401/12 , C07D403/12 , C07D409/14 , C07D417/12 , C07D417/14
摘要： This invention relates to treating cancer or an angiogenesis-related disease using a compound of formula 1: wherein R1, R2, R3, R4, and n are defined herein.
摘要翻译：本发明涉及使用式1化合物治疗癌症或血管发生相关疾病：其中R1，R2，R3，R4和n如本文所定义。

10. 发明申请

US20070049009A1 METHOD OF MANUFACTURING CONDUCTIVE LAYER 审中-公开
标题翻译：制造导电层的方法
公开(公告)号：US20070049009A1
公开(公告)日：2007-03-01
申请号：US11162119
申请日：2005-08-30
申请人： Chia-Lin Hsu , Liang-Yuan Fang , Shu-Jen Chen
发明人： Chia-Lin Hsu , Liang-Yuan Fang , Shu-Jen Chen
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76849 , H01L21/02068 , H01L21/02074 , H01L21/76861
摘要： A method of manufacturing a conductive layer is described. A substrate having a dielectric layer thereon is provided. The dielectric layer has a patterned structure and the patterned structure exposes a portion of the conductive layer. The surface of the substrate is cleaned in a first cleaning step and a cap layer is formed over the exposed portion of the conductive layer. Thereafter, the surface of the substrate is cleaned again in a second cleaning step to remove the residual cap layer on the surface of the dielectric layer. Finally, a dry cleaning step is performed to clean and dry the surface of the substrate.
摘要翻译：对导电层的制造方法进行说明。提供其上具有介电层的基板。介电层具有图案化结构，并且图案化结构暴露导电层的一部分。在第一清洁步骤中清洁基板的表面，并且在导电层的暴露部分上形成盖层。此后，在第二清洁步骤中再次清洁基板的表面，以去除介电层表面上的剩余盖层。最后，进行干洗步骤以清洁和干燥基材的表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式