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1. 发明授权

US07592279B1 Boron carbide and boron carbide components 失效
标题翻译：碳化硼和碳化硼组分
公开(公告)号：US07592279B1
公开(公告)日：2009-09-22
申请号：US10867442
申请日：2004-06-14
申请人： Robert F. Speyer , Hyukjae Lee , Zhihao Bao
发明人： Robert F. Speyer , Hyukjae Lee , Zhihao Bao
IPC分类号： C04B35/563
CPC分类号： C04B35/6455 , C04B35/563 , C04B35/64 , C04B35/645 , C04B2235/5409 , C04B2235/5445 , C04B2235/5463 , C04B2235/608 , C04B2235/6582 , C04B2235/661 , C04B2235/72 , C04B2235/77 , C04B2235/94 , C04B2235/96
摘要： High-density components and products as well as processes for making high-density components and products are disclosed. One exemplary component, among others, includes a boron carbide component comprised of a homogeneous boron carbide powder. The component has at least a 93% relative density (RD) and a Vickers hardness of at least 2000 kg/mm2.
摘要翻译：公开了高密度部件和产品以及用于制造高密度部件和产品的方法。一个示例性组件，其中包括由均匀的碳化硼粉末组成的碳化硼组分。该组分具有至少93％的相对密度（RD）和至少2000kg / mm 2的维氏硬度。

2. 发明申请

US20090026665A1 PROCESSES AND METHODS OF MAKING BORON CARBIDE 失效
标题翻译：制备碳硼化物的方法和方法
公开(公告)号：US20090026665A1
公开(公告)日：2009-01-29
申请号：US11041415
申请日：2005-05-04
申请人： Robert F. Speyer , Hyukjae Lee , Zhihao Bao
发明人： Robert F. Speyer , Hyukjae Lee , Zhihao Bao
IPC分类号： B28B1/00
CPC分类号： C04B35/6455 , C04B35/563 , C04B35/64 , C04B35/645 , C04B2235/5409 , C04B2235/5445 , C04B2235/5463 , C04B2235/608 , C04B2235/6582 , C04B2235/661 , C04B2235/72 , C04B2235/77 , C04B2235/94 , C04B2235/96
摘要： High-density components and products as well as processes for making high-density components and products are disclosed. One exemplary component, among others, includes a boron carbide component comprised of a homogeneous boron carbide powder. The component has at least a 93% relative density (RD) and a Vickers hardness of at least 2000 kg/mm2.
摘要翻译：公开了高密度部件和产品以及用于制造高密度部件和产品的方法。一个示例性组件，其中包括由均匀的碳化硼粉末组成的碳化硼组分。该组分具有至少93％的相对密度（RD）和至少2000kg / mm 2的维氏硬度。

3. 发明申请

US20100032874A1 PROCESSES AND METHODS OF MAKING BORON CARBIDE AND BORON CARBIDE COMPONENTS 审中-公开
标题翻译：制备碳化硼和碳化硼组分的方法和方法
公开(公告)号：US20100032874A1
公开(公告)日：2010-02-11
申请号：US12541011
申请日：2009-08-13
申请人： Robert F. Speyer , Hyukjae Lee , Zhihao Bao
发明人： Robert F. Speyer , Hyukjae Lee , Zhihao Bao
IPC分类号： C04B35/64
CPC分类号： C04B35/6455 , C04B35/563 , C04B35/64 , C04B35/645 , C04B2235/5409 , C04B2235/5445 , C04B2235/5463 , C04B2235/608 , C04B2235/6582 , C04B2235/661 , C04B2235/72 , C04B2235/77 , C04B2235/94 , C04B2235/96
摘要： High-density components and products as well as processes for making high-density components and products are disclosed. One exemplary component, among others, includes a boron carbide component comprised of a homogeneous boron carbide powder. The component has at least a 93% relative density (RD) and a Vickers hardness of at least 2000 kg/mm2.
摘要翻译：公开了高密度部件和产品以及用于制造高密度部件和产品的方法。一个示例性组件，其中包括由均匀的碳化硼粉末组成的碳化硼组分。该组分具有至少93％的相对密度（RD）和至少2000kg / mm 2的维氏硬度。

4. 发明授权

US07517491B2 Processes and methods of making boron carbide 失效
标题翻译：制造碳化硼的方法和方法
公开(公告)号：US07517491B2
公开(公告)日：2009-04-14
申请号：US11041415
申请日：2005-05-04
申请人： Robert F. Speyer , Hyukjae Lee , Zhihao Bao
发明人： Robert F. Speyer , Hyukjae Lee , Zhihao Bao
IPC分类号： B28B3/00
CPC分类号： C04B35/6455 , C04B35/563 , C04B35/64 , C04B35/645 , C04B2235/5409 , C04B2235/5445 , C04B2235/5463 , C04B2235/608 , C04B2235/6582 , C04B2235/661 , C04B2235/72 , C04B2235/77 , C04B2235/94 , C04B2235/96
摘要： High-density components and products as well as processes for making high-density components and products are disclosed. One exemplary component, among others, includes a boron carbide component comprised of a homogeneous boron carbide powder. The component has at least a 93% relative density (RD) and a Vickers hardness of at least 2000 kg/mm2.
摘要翻译：公开了高密度部件和产品以及用于制造高密度部件和产品的方法。一个示例性组件，其中包括由均匀的碳化硼粉末组成的碳化硼组分。该组分具有至少93％的相对密度（RD）和至少2000kg / mm 2的维氏硬度。

5. 发明授权

US08377369B2 Density and hardness pressureless sintered and post-HIPed B4C 失效
标题翻译：密度和硬度无压烧结和后HIP化B4C
公开(公告)号：US08377369B2
公开(公告)日：2013-02-19
申请号：US11311026
申请日：2005-12-19
申请人： Robert F. Speyer , Zhihao Bao , Namtae Cho
发明人： Robert F. Speyer , Zhihao Bao , Namtae Cho
IPC分类号： B28B3/00
CPC分类号： C04B35/563 , C04B35/62805 , C04B35/64 , C04B35/6455 , C04B2235/3821 , C04B2235/3895 , C04B2235/5252 , C04B2235/5409 , C04B2235/5472 , C04B2235/604 , C04B2235/608 , C04B2235/652 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6582 , C04B2235/661 , C04B2235/72 , C04B2235/722 , C04B2235/77 , C04B2235/782 , C04B2235/784 , C04B2235/786 , C04B2235/95 , C04B2235/96 , C04B2235/9615
摘要： A method for pressureless sintering of B4C without sintering agents which reduces sintering time without sacrificing relative density, and avoids decomposition of B4C and loss of relative density.
摘要翻译：不含烧结剂的B4C进行无压烧结的方法，其能够降低烧结时间而不牺牲相对密度，避免B4C分解和相对密度降低。

6. 发明授权

US07615206B2 Methods of fabricating nanoscale-to-microscale structures 失效
标题翻译：制造纳米级至微结构的方法
公开(公告)号：US07615206B2
公开(公告)日：2009-11-10
申请号：US11838211
申请日：2007-08-13
申请人： Kenneth Henry Sandhage , Zhihao Bao
发明人： Kenneth Henry Sandhage , Zhihao Bao
IPC分类号： C01B13/14
CPC分类号： B81C99/0095 , B33Y80/00 , Y10T428/24479 , Y10T428/256 , Y10T428/2998 , Y10T428/31551 , Y10T428/31663
摘要： Methods for the production of shaped nanoscale-to-microscale structures, wherein a nanoscale-to-microscale template is provided having an original chemical composition and an original shape, and the nanoscale-to-microscale template subjected to a chemical reaction, so as to partially or completely convert the nanoscale-to-microscale template into the shaped nanoscale-to-microscale structure having a chemical composition different than the original chemical composition and having substantially the same shape as the original shape, being a scaled version of the original shape. The shaped nanoscale-to-microscale structure formed comprises an element (such as silicon), a metallic alloy (such as a silicon alloy), or a non-oxide compound (such as silicon carbide or silicon nitride).
摘要翻译：制备成形纳米级至微尺度结构的方法，其中提供具有原始化学组成和原始形状的纳米级至微量级模板，以及经受化学反应的纳米级至微量级模板，以便部分或完全地将纳米级至微米级模板转化成具有不同于原始化学成分的化学组成并具有与原始形状基本相同的形状的成形纳米级至微尺度结构，其为原始形状的缩放版本。形成的成形的纳米级至微细结构包括元素（例如硅），金属合金（例如硅合金）或非氧化物（例如碳化硅或氮化硅）。

7. 发明申请

US20070182073A1 Density and hardness pressureless sintered and post-HIPed B4C 失效
标题翻译：密度和硬度无压烧结和后HIP化B4C
公开(公告)号：US20070182073A1
公开(公告)日：2007-08-09
申请号：US11311026
申请日：2005-12-19
申请人： Robert Speyer , Zhihao Bao , Namtae Cho
发明人： Robert Speyer , Zhihao Bao , Namtae Cho
IPC分类号： C04B35/64
CPC分类号： C04B35/563 , C04B35/62805 , C04B35/64 , C04B35/6455 , C04B2235/3821 , C04B2235/3895 , C04B2235/5252 , C04B2235/5409 , C04B2235/5472 , C04B2235/604 , C04B2235/608 , C04B2235/652 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6582 , C04B2235/661 , C04B2235/72 , C04B2235/722 , C04B2235/77 , C04B2235/782 , C04B2235/784 , C04B2235/786 , C04B2235/95 , C04B2235/96 , C04B2235/9615
摘要： A method for pressureless sintering of B4C without sintering agents which reduces sintering time without sacrificing relative density, and avoids decomposition of B4C and loss of relative density.
摘要翻译：没有烧结剂的B 4无压烧结方法，其可以降低烧结时间而不牺牲相对密度，并避免B 4 S C的分解和相对密度的损失。

8. 发明申请

US20080038170A1 METHODS OF FABRICATING NANOSCALE-TO-MICROSCALE STRUCTURES 失效
标题翻译：制备纳米微晶体结构的方法
公开(公告)号：US20080038170A1
公开(公告)日：2008-02-14
申请号：US11838211
申请日：2007-08-13
申请人： Kenneth Henry Sandhage , Zhihao Bao
发明人： Kenneth Henry Sandhage , Zhihao Bao
IPC分类号： C01F5/00
CPC分类号： B81C99/0095 , B33Y80/00 , Y10T428/24479 , Y10T428/256 , Y10T428/2998 , Y10T428/31551 , Y10T428/31663
摘要： Methods for the production of shaped nanoscale-to-microscale structures, wherein a nanoscale-to-microscale template is provided having an original chemical composition and an original shape, and the nanoscale-to-microscale template subjected to a chemical reaction, so as to partially or completely convert the nanoscale-to-microscale template into the shaped nanoscale-to-microscale structure having a chemical composition different than the original chemical composition and having substantially the same shape as the original shape, being a scaled version of the original shape. The shaped nanoscale-to-microscale structure formed comprises an element (such as silicon), a metallic alloy (such as a silicon alloy), or a non-oxide compound (such as silicon carbide or silicon nitride).
摘要翻译：制备成形纳米级至微尺度结构的方法，其中提供具有原始化学组成和原始形状的纳米级至微量级模板，以及经受化学反应的纳米级至微量级模板，以便部分或完全地将纳米级至微米级模板转化成具有不同于原始化学成分的化学组成并具有与原始形状基本相同的形状的成形纳米级至微尺度结构，其为原始形状的缩放版本。形成的成形的纳米级至微细结构包括元素（例如硅），金属合金（例如硅合金）或非氧化物（例如碳化硅或氮化硅）。

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