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1. 发明授权

US06726999B2 Free flowing polyester molding composition 失效
标题翻译：自由流动的聚酯成型组合物
公开(公告)号：US06726999B2
公开(公告)日：2004-04-27
申请号：US10024385
申请日：2001-12-21
申请人： Ralf Schueler , Heinz Peirick , Harald Haeger , Ralf Richter
发明人： Ralf Schueler , Heinz Peirick , Harald Haeger , Ralf Richter
IPC分类号： B32B2706
CPC分类号： C08L67/02 , Y10T428/31732 , Y10T428/31736 , Y10T428/31739 , C08L2666/20
摘要： A molding composition comprises from 80 to 99.9 parts by weight of thermoplastic polyester and from 0.1 to 20 parts by weight of a polyamide-polyamine graft copolymer, where the sum of the parts by weight of the polyester and of the graft copolymer is 100. The molding composition has improved flowability.
摘要翻译：模塑组合物包含80-99.9重量份的热塑性聚酯和0.1-20重量份聚酰胺 - 聚胺接枝共聚物，其中聚酯和接枝共聚物的重量份数之和为100. 成型组合物具有改善的流动性。

2. 发明授权

US06391982B1 Highly branched polyamide graft copolymers 有权
标题翻译：高分支聚酰胺接枝共聚物
公开(公告)号：US06391982B1
公开(公告)日：2002-05-21
申请号：US09605874
申请日：2000-06-29
申请人： Harald Haeger , Ralf Richter , Georg Oenbrink
发明人： Harald Haeger , Ralf Richter , Georg Oenbrink
IPC分类号： C08G7304
CPC分类号： C08G69/26 , C08G69/02 , C08G69/48 , Y10S424/16
摘要： A graft copolymer is prepared by a process comprising: graft polymerizing a polyamide-forming monomer selected from the group consisting of lactams and &ohgr;-aminocarboxylic acids and an oligocarboxylic acid selected from the group consisting of from 0.015 to about 3 mol. % of dicarboxylic acid and from 0.01 to about 1.2 mol. % of tricarboxylic acid, in each case the stated amounts of oligocarboxylic acid based on a molar amount of lactam, &ohgr;-aminocarboxylic acid or combination thereof, onto from 0.5 to 25% by weight, based on the graft copolymer, of a polyamine having at least 11 nitrogen atoms and a number-average molecular weight Mn of at least 500 g/mol., wherein the amino group concentration in the graft copolymer ranges from 100 to 2500 mmol./kg.
摘要翻译：接枝共聚物通过以下方法制备，该方法包括：将选自内酰胺和ω-氨基羧酸的聚酰胺形成单体和选自0.015至约3mol的寡羧酸接枝聚合。％的二羧酸和0.01至约1.2mol。％的三羧酸，在每种情况下，所述量的基于内酰胺，ω-氨基羧酸或其组合的摩尔量的寡羧酸的量为基于接枝共聚物的0.5至25重量％的多胺，其具有至少11个氮原子和数均分子量Mn为至少500g / mol，其中接枝共聚物中的氨基浓度范围为100-2500mmol / kg。

3. 发明授权

US06677015B2 Molding composition with good capability for blow molding 有权
标题翻译：具有良好吹塑能力的成型组合物
公开(公告)号：US06677015B2
公开(公告)日：2004-01-13
申请号：US10021355
申请日：2001-12-19
申请人： Martin Himmelmann , Wilfried Bartz , Franz-Erich Baumann , Guido Schmitz , Georg Oenbrink , Harald Haeger , Ralf Richter
发明人： Martin Himmelmann , Wilfried Bartz , Franz-Erich Baumann , Guido Schmitz , Georg Oenbrink , Harald Haeger , Ralf Richter
IPC分类号： B32B102
CPC分类号： C08G73/028 , C08L79/02 , Y10T428/1352 , Y10T428/31725 , Y10T428/31732
摘要： A molding composition of at least 50% by weight of a polyamine-polyamide copolymer obtained from 0.05 to 2.5% by weight of a polyamine having at least 4 nitrogen atoms and having a viscosity of at least 5 000 Pa•s at 250° C. and at a shear rate of 0.1 l/s, and having a viscosity ratio of at least 7 at 250° C., when the melt viscosities at shear rates of 0.1 l/s and 100 l/s are compared with one another, has high melt stiffness and is easy to cut, and performs well in blow molding.
摘要翻译：一种至少50重量％的多胺 - 聚酰胺共聚物的模塑组合物，其由0.05至2.5重量％的具有至少4个氮原子并且在250℃下具有至少5 000Pa.s的粘度的多胺获得。并且以0.1l / s的剪切速率，并且在250℃下具有至少7的粘度比，当在0.1l / s和100l / s的剪切速率下的熔体粘度相互比较时，具有熔体刚度高，易切削，吹塑性能好。

4. 发明授权

US06538073B1 Polyamide graft copolymers 失效
标题翻译：聚酰胺接枝共聚物
公开(公告)号：US06538073B1
公开(公告)日：2003-03-25
申请号：US09604281
申请日：2000-06-26
申请人： Georg Oenbrink , Harald Haeger , Ralf Richter
发明人： Georg Oenbrink , Harald Haeger , Ralf Richter
IPC分类号： C08L7700
CPC分类号： C08G69/26 , C08G69/28 , C08G69/48 , C09J177/00 , C09J177/08
摘要： A graft copolymer suitable as a blend component or as a hot-melt adhesive, which contains the following monomer units: a) from 0.5 to 25% by weight, based on the graft copolymer, of a polyamine having at least 11 nitrogen atoms and a number-average molar mass Mn of at least 500 g/mol; and b) an equimolar combination of diamine and dicarboxylic acid as polyamide-forming monomers.
摘要翻译：适合作为共混组分或热熔粘合剂的接枝共聚物，其包含以下单体单元：a）基于接枝共聚物，0.5至25重量％的具有至少11个氮原子的多胺和数均摩尔质量Mn为至少500g / mol; 和b）作为形成聚酰胺的单体的二胺和二羧酸的等摩尔组合。

5. 发明授权

US06407182B1 Free-flowing transparent polyamide molding composition 有权
标题翻译：自由流动的透明聚酰胺成型组合物
公开(公告)号：US06407182B1
公开(公告)日：2002-06-18
申请号：US09768286
申请日：2001-01-25
申请人： Juergen Maul , Georg Oenbrink , Harald Haeger , Hans-Peter Hauck , Ralf Richter
发明人： Juergen Maul , Georg Oenbrink , Harald Haeger , Hans-Peter Hauck , Ralf Richter
IPC分类号： C08L7700
CPC分类号： C08L77/00
摘要： Transparent molding compositions are prepared by blending from 50 to 99 parts by weight of a transparent polyamide, and from 1 to 50 parts by weight of a graft copolymer, such that the sum of the parts by weight of the transparent polyamide and the graft copolymer is 100. The graft copolymer is prepared by reacting from 0.5 to 25% by weight, based on the graft copolymer, of a branched polyamine having at least 4 nitrogen atoms and having a number average molecular weight Mn of at least 146 g/mol, with polyamide-forming monomers selected from the group consisting of lactams, &ohgr;-aminocarboxylic acids, equimolar combinations of diamine and dicarboxylic acid, and combinations thereof.
摘要翻译：通过将50至99重量份的透明聚酰胺和1至50重量份的接枝共聚物共混来制备透明模塑组合物，使得透明聚酰胺和接枝共聚物的重量份之和为接枝共聚物通过基于接枝共聚物使0.5至25重量％的具有至少4个氮原子并具有至少146g / mol数均分子量Mn的支链多胺与选自内酰胺，ω-氨基羧酸，二胺和二羧酸的等摩尔组合的聚酰胺形成单体及其组合。

6. 发明授权

US09034744B2 Replacement gate approach for high-k metal gate stacks by avoiding a polishing process for exposing the placeholder material 有权
标题翻译：通过避免用于暴露占位符材料的抛光工艺，用于高k金属栅极堆叠的替代栅极方法
公开(公告)号：US09034744B2
公开(公告)日：2015-05-19
申请号：US12942200
申请日：2010-11-09
申请人： Ralf Richter , Jens Heinrich , Andy Wei
发明人： Ralf Richter , Jens Heinrich , Andy Wei
IPC分类号： H01L29/772 , H01L21/8238 , H01L21/768 , H01L29/66 , H01L29/78
CPC分类号： H01L21/823842 , H01L21/76819 , H01L21/823807 , H01L29/66545 , H01L29/66583 , H01L29/7833 , H01L29/7843
摘要： In a replacement gate approach, the exposure of the placeholder material of the gate electrode structures may be accomplished on the basis of an etch process, thereby avoiding the introduction of process-related non-uniformities, which are typically associated with a complex polishing process for exposing the top surface of the placeholder material. In some illustrative embodiments, the placeholder material may be exposed by an etch process based on a sacrificial mask material.
摘要翻译：在替代栅极方法中，栅极电极结构的占位符材料的暴露可以基于蚀刻工艺来实现，从而避免引入与工艺相关的非均匀性，这通常与复杂的抛光工艺相关暴露占位符材料的顶面。在一些说明性实施例中，占位符材料可以通过基于牺牲掩模材料的蚀刻工艺曝光。

7. 发明授权

US08951907B2 Semiconductor devices having through-contacts and related fabrication methods 有权
标题翻译：具有通孔和相关制造方法的半导体器件
公开(公告)号：US08951907B2
公开(公告)日：2015-02-10
申请号：US12968068
申请日：2010-12-14
申请人： Ralf Richter , Jens Heinrich , Holger Schuehrer
发明人： Ralf Richter , Jens Heinrich , Holger Schuehrer
IPC分类号： H01L21/4763 , H01L21/768 , H01L21/285 , H01L23/485
CPC分类号： H01L21/76808 , H01L21/28512 , H01L21/76802 , H01L21/76897 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a layer of dielectric material overlying a doped region formed in a semiconductor substrate adjacent to a gate structure and forming a conductive contact in the layer of dielectric material. The conductive contact overlies and electrically connects to the doped region. The method continues by forming a second layer of dielectric material overlying the conductive contact, forming a voided region in the second layer overlying the conductive contact, forming a third layer of dielectric material overlying the voided region, and forming another voided region in the third layer overlying at least a portion of the voided region in the second layer. The method continues by forming a conductive material that fills both voided regions to contact the conductive contact.
摘要翻译：提供了半导体器件结构和相关制造方法的装置。一种用于制造半导体器件结构的方法包括形成覆盖在与栅极结构相邻的半导体衬底中形成的掺杂区域的介电材料层，并在该介电材料层中形成导电接触。导电接触覆盖并电连接到掺杂区域。该方法继续通过形成覆盖导电接触的第二层介电材料，在覆盖导电接触的第二层中形成空隙区域，形成覆盖空隙区域的第三层电介质材料，以及在第三层中形成另一个空隙区域覆盖第二层中的空隙区域的至少一部分。该方法通过形成填充两个空隙区域以接触导电触点的导电材料而继续。

8. 发明授权

US08697584B2 Enhanced transistor performance of N-channel transistors by using an additional layer above a dual stress liner in a semiconductor device 有权
标题翻译：通过在半导体器件中的双应力衬垫上方使用附加层来增强N沟道晶体管的晶体管性能
公开(公告)号：US08697584B2
公开(公告)日：2014-04-15
申请号：US12017175
申请日：2008-01-21
申请人： Ralf Richter , Andy Wei , Roman Boschke
发明人： Ralf Richter , Andy Wei , Roman Boschke
IPC分类号： H01L21/31
CPC分类号： H01L21/823807 , H01L29/7843
摘要： By forming an additional dielectric material, such as silicon nitride, after patterning dielectric liners of different intrinsic stress, a significant increase of performance of N-channel transistors may be obtained while substantially not contributing to a performance loss of the P-channel transistor.
摘要翻译：通过在构成不同固有应力的介电衬垫的图案之后形成诸如氮化硅的附加电介质材料，可以获得N沟道晶体管的性能的显着提高，同时基本上不会导致P沟道晶体管的性能损失。

9. 发明申请

US20140048912A1 COMPRESSIVE STRESS TRANSFER IN AN INTERLAYER DIELECTRIC OF A SEMICONDUCTOR DEVICE BY PROVIDING A BI-LAYER OF SUPERIOR ADHESION AND INTERNAL STRESS 有权
标题翻译：通过提供超级粘合和内应力的双层来在半导体器件的中间层电介质中的压应力传递
公开(公告)号：US20140048912A1
公开(公告)日：2014-02-20
申请号：US13588460
申请日：2012-08-17
申请人： Joerg Hohage , Hartmut Ruelke , Ralf Richter
发明人： Joerg Hohage , Hartmut Ruelke , Ralf Richter
IPC分类号： H01L21/31 , H01L29/06
CPC分类号： H01L21/76832 , C23C16/345 , C23C16/45523 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/76834 , H01L21/823807 , H01L29/665 , H01L29/7833 , H01L29/7843
摘要： The present disclosure provides manufacturing techniques and semiconductor devices in which performance of P-channel transistors may be enhanced on the basis of a stress mechanism that involves the deposition of a dielectric bi-layer system. Contrary to conventional strategies, an additional pre-treatment may be performed prior to the deposition of an adhesion layer in a plasma-free process atmosphere, thereby enabling a reduced thickness of the adhesion layer and a higher internal stress level of the subsequent top layer.
摘要翻译：本公开提供了制造技术和半导体器件，其中可以基于涉及沉积介电双层系统的应力机制来增强P沟道晶体管的性能。与常规策略相反，可以在粘附层在无等离子体的工艺气氛中沉积之前进行另外的预处理，从而能够减小粘合层的厚度和随后的顶层的更高的内应力水平。

10. 发明授权

US08541885B2 Technique for enhancing transistor performance by transistor specific contact design 有权
标题翻译：通过晶体管特定接触设计增强晶体管性能的技术
公开(公告)号：US08541885B2
公开(公告)日：2013-09-24
申请号：US13107515
申请日：2011-05-13
申请人： Martin Gerhardt , Ralf Richter , Thomas Feudel , Uwe Griebenow
发明人： Martin Gerhardt , Ralf Richter , Thomas Feudel , Uwe Griebenow
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/7842 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/41758 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： By locally adapting the size and/or density of a contact structure, for instance, within individual transistors or in a more global manner, the overall performance of advanced semiconductor devices may be increased. Hence, the mutual interaction between the contact structure and local device characteristics may be taken into consideration. On the other hand, a high degree of compatibility with conventional process strategies may be maintained.
摘要翻译：通过局部地适应接触结构的尺寸和/或密度，例如，在单个晶体管内或以更全球化的方式，可以增加先进半导体器件的整体性能。因此，可以考虑接触结构和局部器件特性之间的相互作用。另一方面，可以保持与常规工艺策略的高度兼容性。

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