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1. 发明申请

US20070295901A1 METHODS AND SYSTEMS FOR TRAPPING ION BEAM PARTICLES AND FOCUSING AN ION BEAM 有权
标题翻译：用于捕获离子束颗粒和聚焦离子束的方法和系统
公开(公告)号：US20070295901A1
公开(公告)日：2007-12-27
申请号：US11739934
申请日：2007-04-25
申请人： Peter Kellerman , Victor Benveniste , Alexander Perel , Brian Freer , Michael Graf
发明人： Peter Kellerman , Victor Benveniste , Alexander Perel , Brian Freer , Michael Graf
IPC分类号： B01D59/44
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/022 , H01J2237/049
摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.
摘要翻译：一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压，其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

2. 发明申请

US20050205807A1 In-situ monitoring on an ion implanter 有权
标题翻译：离子注入机的原位监测
公开(公告)号：US20050205807A1
公开(公告)日：2005-09-22
申请号：US10803439
申请日：2004-03-18
申请人： Alexander Perel , Lyudmila Stone , William Loizides , Victor Benveniste
发明人： Alexander Perel , Lyudmila Stone , William Loizides , Victor Benveniste
IPC分类号： G01N15/06 , G01N21/47 , G01N21/84 , G01N21/94 , G01N21/95 , H01J37/317 , H01L21/66 , H01J37/304
CPC分类号： G01N21/94 , G01N21/47 , G01N21/9501 , G01N2015/0693 , G01N2021/4702 , G01N2021/8416 , G01N2201/06113 , H01J2237/0225 , H01J2237/31701
摘要： The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position. For example, particles or other such contaminates may be identified on wafers during the implantation process before additional time and resources are consumed, and aid in determining the sources of such contaminates. Further, threshold analysis of the quantity or size of such particles, for example, may provide a system interlock for shutdown or feedback control.
摘要翻译：本发明涉及在植入操作期间在离子注入系统中的颗粒和其它这些特征的原位检测，以避免例如植入之前和/或之后另外消耗的另外的监测工具步骤。一个或多个这样的系统被揭示用于检测由光源（例如激光束）照射的一个或多个半导体晶片上的颗粒的散射光。该系统包括具有用于照射晶片上的点的激光器和与离子注入操作旋转相反的一对检测器（例如，PMT或光电二极管）的离子注入机。晶片传输器在固定的激光光斑下保持用于平移扫描的晶片或晶片。计算机分析从照射的晶片（工件）检测到的散射光的强度，并且还可以将检测到的光映射到唯一的位置。例如，在额外的时间和资源被消耗之前，可以在植入过程期间在晶片上识别颗粒或其它这样的污染物，并且有助于确定这些污染物的来源。此外，例如，这种颗粒的数量或尺寸的阈值分析可以提供用于关闭或反馈控制的系统互锁。

3. 发明申请

US20070145298A1 Ion beam angle measurement systems and methods for ion implantation systems 有权
标题翻译：离子束角度测量系统和离子注入系统的方法
公开(公告)号：US20070145298A1
公开(公告)日：2007-06-28
申请号：US11299593
申请日：2005-12-12
申请人： Brian Freer , Alexander Perel
发明人： Brian Freer , Alexander Perel
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578 , H01J2237/30472 , H01J2237/31703
摘要： Angle of incidence measurements along an axis of ion implantation are obtained by employing positive and negative slot structures. The positive slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of an ion beam having a selected range of angles in a positive direction. The negative slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of the ion beam having the selected range of angles in a negative direction. A first beam measurement mechanism measures beam current of the positive portion to obtain a positive angle beam current measurement. A second beam measurement mechanism measures beam current of the negative portion to obtain a negative angle beam current measurement. An analyzer component employs the positive angle beam current measurement and the negative angle beam current measurement to determine a measured angle of incidence.
摘要翻译：通过采用正和负槽结构，可获得离子注入轴的入射角测量。正槽结构在其间具有入口开口，出口开口和狭槽轮廓，其在正方向上获得具有选定角度范围的离子束的一部分。负槽结构在其间具有进入开口，出口开口和狭槽轮廓，其间获得具有在负方向上的选定角度范围的离子束的一部分。第一光束测量机构测量正部分的光束电流以获得正角度束电流测量。第二光束测量机构测量负部分的光束电流以获得负角度束电流测量。分析器组件采用正角度束电流测量和负角度束电流测量来确定测量的入射角。

4. 发明申请

US20070178678A1 Methods of implanting ions and ion sources used for same 审中-公开
标题翻译：植入离子和离子源的方法
公开(公告)号：US20070178678A1
公开(公告)日：2007-08-02
申请号：US11342183
申请日：2006-01-28
申请人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
发明人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
IPC分类号： H01L21/26
CPC分类号： H01J37/08 , C23C14/48 , H01J27/02 , H01J37/3171
摘要： Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.
摘要翻译：提供了用于其的离子注入和离子源的方法。该方法涉及从包含多个元素的源馈送气体产生离子。例如，源原料气体可以包含硼和至少两个其它元素（例如，X a，B B，B和C）。使用这种源进料气体可以产生比某些常规方法多的优点，包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。此外，在某些实施方案中，源进料气体的组成可以选择为在相对较高的温度（例如，大于350℃）下是热稳定的，其允许在许多常规离子源中使用这种气体（例如，间接加热阴极（IHC），伯纳斯）在使用过程中产生这种温度。

5. 发明申请

US20120256097A1 INDIRECTLY HEATED CATHODE CARTRIDGE DESIGN 有权
标题翻译：独立加热阴极盒设计
公开(公告)号：US20120256097A1
公开(公告)日：2012-10-11
申请号：US13082495
申请日：2011-04-08
申请人： Craig R. Chaney , Leo V. Klos , Anthony Renau , Alexander Perel
发明人： Craig R. Chaney , Leo V. Klos , Anthony Renau , Alexander Perel
IPC分类号： H01J1/50 , H01J9/02
CPC分类号： H01J37/067 , H01J19/14 , H01J19/20 , H01J29/485 , H01J37/026 , H01J37/075 , H01J37/3171 , H01J2237/06308 , H01J2237/06375
摘要： An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer.
摘要翻译：公开了一种用于在等离子体喷枪中产生电子的装置和方法。该装置包括一个间接加热的阴极（IHC），其被包含在一个预制的盒中。这种墨盒可以在等离子喷枪中轻松更换。此外，IHC的使用减少了注入工件或晶片的污染物的量。

6. 发明授权

US07999479B2 Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control 有权
标题翻译：用于宽带离子束产生和控制的共轭ICP和ECR等离子体源
公开(公告)号：US07999479B2
公开(公告)日：2011-08-16
申请号：US12424964
申请日：2009-04-16
申请人： Costel Biloiu , Jay Scheuer , Alexander Perel
发明人： Costel Biloiu , Jay Scheuer , Alexander Perel
IPC分类号： H01J7/24 , H05H1/24
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/061 , H01J2237/065 , H01J2237/0815 , H01L31/0288 , H01L31/1804 , H01L31/206 , Y02P70/521
摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个等离子体源产生高密度宽带状离子束的离子源。除了等离子体源之外，离子源还包括扩散室。扩散室具有沿着与等离子体源的介质柱体相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双等离子体源用于产生更均匀的提取离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

7. 发明申请

US20100264328A1 CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL 有权
标题翻译：连接ICP和ECR等离子体源用于大量离子束生成和控制
公开(公告)号：US20100264328A1
公开(公告)日：2010-10-21
申请号：US12424964
申请日：2009-04-16
申请人： Costel Biloiu , Jay Scheuer , Alexander Perel
发明人： Costel Biloiu , Jay Scheuer , Alexander Perel
IPC分类号： H01J27/00
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/061 , H01J2237/065 , H01J2237/0815 , H01L31/0288 , H01L31/1804 , H01L31/206 , Y02P70/521
摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个等离子体源产生高密度宽带状离子束的离子源。除了等离子体源之外，离子源还包括扩散室。扩散室具有沿着与等离子体源的介质柱体相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双等离子体源用于产生更均匀的提取离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

8. 发明申请

US20100055345A1 HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION 有权
标题翻译：高密度HELICON等离子体源用于宽度的RIBBON离子束生成
公开(公告)号：US20100055345A1
公开(公告)日：2010-03-04
申请号：US12200189
申请日：2008-08-28
申请人： Costel Biloiu , Alexander Perel , Jay Scheuer
发明人： Costel Biloiu , Alexander Perel , Jay Scheuer
IPC分类号： H05H1/24 , C23C16/503
CPC分类号： H05H1/46 , H01J27/18 , H01J37/08 , H01J37/3171 , H01J2237/0817 , H01L21/26513 , H01L21/67005
摘要： An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个螺旋等离子体源产生高密度宽带状离子束的离子源。除了螺旋型等离子体源之外，离子源还包括扩散室。扩散室具有沿着与螺旋等离子体源的介质圆筒相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双螺旋等离子体源用于产生更均匀的提取的离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

9. 发明授权

US08142607B2 High density helicon plasma source for wide ribbon ion beam generation 有权
标题翻译：用于宽带离子束产生的高密度螺旋等离子体源
公开(公告)号：US08142607B2
公开(公告)日：2012-03-27
申请号：US12200189
申请日：2008-08-28
申请人： Costel Biloiu , Alexander Perel , Jay Scheuer
发明人： Costel Biloiu , Alexander Perel , Jay Scheuer
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H05H1/46 , H01J27/18 , H01J37/08 , H01J37/3171 , H01J2237/0817 , H01L21/26513 , H01L21/67005
摘要： An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个螺旋等离子体源产生高密度宽带状离子束的离子源。除了螺旋型等离子体源之外，离子源还包括扩散室。扩散室具有沿着与螺旋等离子体源的介质圆筒相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双螺旋等离子体源用于产生更均匀的提取的离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

10. 发明申请

US20070195482A1 Johnsen-Rahbek electrostatic chuck driven with AC voltage 审中-公开
标题翻译： Johnsen-Rahbek静电卡盘用AC电压驱动
公开(公告)号：US20070195482A1
公开(公告)日：2007-08-23
申请号：US11395744
申请日：2006-03-31
申请人： Richard Muka , Alexander Perel , Paul Murphy
发明人： Richard Muka , Alexander Perel , Paul Murphy
IPC分类号： H01T23/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic chuck includes dielectric layer having at least one region, an electrode associated with the at least one region, and an AC power source configured to provide an AC voltage signal to the electrode. The dielectric property of the dielectric layer is configured to permit a charge migration about the dielectric layer to produce an electrostatic force to attract a workpiece to the dielectric layer when the AC voltage signal is applied to the electrode.
摘要翻译：静电卡盘包括具有至少一个区域的电介质层，与该至少一个区域相关联的电极以及被配置为向该电极提供AC电压信号的AC电源。电介质层的介电特性被配置成当AC电压信号被施加到电极时允许围绕电介质层的电荷迁移产生静电力以将工件吸引到电介质层。

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