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1. 发明授权

US4385086A Method for preventing leaching of contaminants from solid surfaces 失效
标题翻译：污物从固体表面浸出的方法
公开(公告)号：US4385086A
公开(公告)日：1983-05-24
申请号：US100930
申请日：1979-12-06
申请人： Muneo Nakayama , Hisashi Nakane , Akira Yokota , Shingo Asaumi
发明人： Muneo Nakayama , Hisashi Nakane , Akira Yokota , Shingo Asaumi
IPC分类号： C09D4/00 , C09D5/00 , B05D3/02
CPC分类号： C09D5/00 , C03C17/004 , C03C17/23 , C09D4/00 , C23C18/1216 , C23C18/1241 , C23C18/1245 , C23C18/1283 , C03C2217/213 , C03C2217/78 , C03C2218/11
摘要： An efficient method is proposed for preventing leaching of contaminants from the surface of a solid, such as sodium ions from the surface of soda glass or nickel, chromium or iron from the surface of stainless steel in order to minimize detrimental contamination of highly pure substances in contact with the solid surface.The effect is basically obtained by providing a coating film of oxidized silicon on to the solid surface and the coating film is formed by applying a coating solution containing a hydroxysilane compound to the surface followed by baking of the coating layer at a temperature not lower than 150.degree. C., the coating solution being prepared by the equilibration reaction of an alkoxysilane with a carboxylic acid and an alcohol, of an acyloxysilane with an alcohol, or of an alkoxysilane with water in an alcohol where the molar ratios of the individual reactants are in the specified ranges.
摘要翻译：提出了一种有效的方法，用于防止污染物从不锈钢表面的钠玻璃或镍，铬或铁表面的固体表面浸出，以最大限度地减少高纯度物质的有害污染与固体表面接触。通过在固体表面上设置氧化硅的涂膜，基本上得到效果，通过在表面涂布含有羟基硅烷化合物的涂布溶液，然后在不低于150℃的温度下进行涂布，形成涂膜 ℃，通过烷基硅烷与羧酸和醇与丙烯氧基硅烷与醇或烷氧基硅烷与醇在醇中的平衡反应制备的涂料溶液，其中各个反应物的摩尔比为指定范围。

2. 发明授权

US4550239A Automatic plasma processing device and heat treatment device 失效
标题翻译：自动等离子处理装置和热处理装置
公开(公告)号：US4550239A
公开(公告)日：1985-10-29
申请号：US424503
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： B65G49/07 , H01L21/677 , B23K9/00
CPC分类号： H01L21/67778 , H01L21/67781 , Y10S156/912 , Y10S414/137 , Y10S414/14
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.
摘要翻译：一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。

3. 发明授权

US4277525A Liquid compositions for forming silica coating films 失效
标题翻译：用于形成二氧化硅涂膜的液体组合物
公开(公告)号：US4277525A
公开(公告)日：1981-07-07
申请号：US133092
申请日：1980-03-24
申请人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
发明人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
IPC分类号： C08G77/00 , C08G77/02 , C08G77/06 , C09D183/00 , C09D183/02 , C09D183/04 , C09D183/14 , B05D3/02
CPC分类号： C09D183/14 , C09D183/02 , C09D183/04
摘要： Liquid compositions suitable for providing silica-based coating films on to various substrate surfaces are prepared by the reaction of an alkoxy-containing silane, a lower carboxylic acid and an alcohol in the presence of a reaction accelerator which is an organic acid different from the above mentioned lower carboxylic acid. The reaction proceeds very smoothly even in the absence of any halogen-containing compounds, and the resultant liquid coating compositions are free from the problem of corrosion due to the presence of a halogen-containing ingredient.
摘要翻译：适用于在各种基材表面上提供二氧化硅基涂膜的液体组合物是通过含有烷氧基的硅烷，低级羧酸和醇在与上述不同的有机酸的反应促进剂存在下反应来制备的提到的低级羧酸。即使不存在任何含卤素化合物，反应也非常顺利，所得到的液体涂料组合物由于含卤素成分的存在而没有腐蚀的问题。

4. 发明授权

US4268539A Liquid coating composition for forming transparent conductive films and a coating process for using said composition 失效
标题翻译：用于形成透明导电膜的液体涂料组合物和使用所述组合物的涂布方法
公开(公告)号：US4268539A
公开(公告)日：1981-05-19
申请号：US960652
申请日：1978-11-14
申请人： Muneo Nakayama , Toshihiro Nishimura , Akira Hashimoto , Hisashi Nakane , Teruo Kimura
发明人： Muneo Nakayama , Toshihiro Nishimura , Akira Hashimoto , Hisashi Nakane , Teruo Kimura
IPC分类号： C03C17/25 , C03C17/27 , C04B41/50 , H01B1/08 , H01B13/00 , B05D5/12 , B05D1/02 , B05D3/02 , C03C17/23
CPC分类号： C04B41/5009 , C03C17/27 , H01B1/08 , C03C2217/215 , C03C2218/11 , C03C2218/322
摘要： A liquid coating composition for formation of a transparent conductive film, which comprises a solution of indium nitrate in a .beta.-diketone or a mixture of a .beta.-diketone and another organic solvent or a reaction product of indium nitrate with a .beta.-diketone, an activator and an organic solvent other than a .beta.-diketone, is disclosed.When this coating composition is coated on a substrate and the coated substrate is heat-treated at a temperature higher than about 350.degree. C., there can be obtained a transparent conductive film having excellent transparency, electrical conductivity and mechanical strength.
摘要翻译：用于形成透明导电膜的液体涂料组合物，其包含硝酸铟在β-二酮或β-二酮与另一种有机溶剂的混合物中的溶液或硝酸铟与β-二酮的反应产物，活化剂和除β-二酮以外的有机溶剂。当将这种涂料组合物涂覆在基材上并且涂覆的基材在高于约350℃的温度下进行热处理时，可以获得具有优异的透明性，导电性和机械强度的透明导电膜。

5. 发明授权

US4694040A Liquid composition for forming a coating film of organopolysiloxane and method for the preparation thereof 失效
标题翻译：用于形成有机聚硅氧烷的涂膜的液体组合物及其制备方法
公开(公告)号：US4694040A
公开(公告)日：1987-09-15
申请号：US902029
申请日：1986-08-25
申请人： Akira Hashimoto , Toshihiro Nishimura , Muneo Nakayama , Hisashi Nakane , Shozo Toda
发明人： Akira Hashimoto , Toshihiro Nishimura , Muneo Nakayama , Hisashi Nakane , Shozo Toda
IPC分类号： C08G77/00 , C08G77/06 , C09D183/04 , C09D183/14 , C08K5/05
CPC分类号： C09D183/14
摘要： The invention provides a novel means for providing a highly heat-resistant and corrosion-resistant coating film on the surface of a substrate such as a semiconductor silicon wafer or glass plate by coating the surface with a liquid coating composition which is a solution of an oligomeric organopolysiloxane as a partial dehydration-condensation product of a monohydrocarbylsilane triol RSi(OH).sub.3, optionally, with admixture of a dihydrocarbylsilane diol R.sub.2 Si(OH).sub.2, R being a monovalent hydrocarbon group, e.g. methyl or phenyl, in an organic solvent followed by baking of the coated substrate to convert the coating layer into a cured resin film.
摘要翻译：本发明提供了一种用于通过用液体涂料组合物涂覆表面而在诸如半导体硅晶片或玻璃板的基材的表面上提供高耐热和耐腐蚀的涂膜的新颖方法，该液体涂料组合物是低聚物作为单烃基硅烷三醇RSi（OH）3的部分脱水缩合产物的有机聚硅氧烷，任选地与二烃基硅烷二醇R2Si（OH）2的混合物，R是一价烃基，例如甲基或苯基，然后烘烤涂布的基材，将涂层转化为固化的树脂膜。

6. 外观设计

USD291413S Wafer holding frame 失效
公开(公告)号：USD291413S
公开(公告)日：1987-08-18
申请号：US689661
申请日：1985-01-08
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
设计人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama

7. 发明授权

US4550242A Automatic plasma processing device and heat treatment device for batch treatment of workpieces 失效
标题翻译：自动等离子处理装置和热处理装置，用于批量处理工件
公开(公告)号：US4550242A
公开(公告)日：1985-10-29
申请号：US424287
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： H01L21/677 , B23K9/00
CPC分类号： H01L21/67781 , H01L21/67778 , Y10S156/912 , Y10S414/137
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.
摘要翻译：一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机制。自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。

8. 发明授权

US4474642A Method for pattern-wise etching of a metallic coating film 失效
标题翻译：金属涂膜的图案蚀刻方法
公开(公告)号：US4474642A
公开(公告)日：1984-10-02
申请号：US514793
申请日：1983-07-18
申请人： Hisashi Nakane , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
发明人： Hisashi Nakane , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
IPC分类号： C23F1/00 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/312 , H01L21/3213 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/32139 , H01L21/312
摘要： The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.
摘要翻译：本发明提供了一种用于在衬底的表面上提供铝膜的布线和电极的改进方法。代替在金属膜上直接形成有机抗蚀剂层的常规方法，通过在金属膜和有机抗蚀剂之间设置主要由二氧化硅构成的辅助掩模层，可以显着提高图案的细度和精度层; 并通过用含氟蚀刻气体通过有机抗蚀剂层的图案化掩模蚀刻辅助掩模层以形成图案化的掩蔽层，然后用含氯蚀刻气体通过蚀刻气体蚀刻金属膜，并进行图案蚀刻图案化的辅助掩模层的掩模，然后最后去除剩余的辅助掩模层。

9. 发明授权

US4868096A Surface treatment of silicone-based coating films 失效
标题翻译：硅胶涂层的表面处理
公开(公告)号：US4868096A
公开(公告)日：1989-09-19
申请号：US92485
申请日：1987-09-03
申请人： Muneo Nakayama , Akira Uehara , Akira Hashimoto , Toshihiro Nishimura , Isamu Hijikata , Mitsuaki Minato , Eiichi Kashiwagi
发明人： Muneo Nakayama , Akira Uehara , Akira Hashimoto , Toshihiro Nishimura , Isamu Hijikata , Mitsuaki Minato , Eiichi Kashiwagi
IPC分类号： G03F7/11
CPC分类号： G03F7/11
摘要： The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.
摘要翻译：当将硅氧烷基涂膜在120℃的温度下进行等离子体处理时，可以改善基材上的硅酮基涂膜与外涂层（例如光致抗蚀剂层）的粘附性，而不引起裂纹。在主要由氧组成的气体的气氛中。等离子体处理的类似条件适用于当在包括以下步骤的步骤中需要对硅氧烷基涂膜进行图案化的步骤时，在其上形成光致抗蚀剂层，以光刻方法对光刻胶层进行图案化，选择性地蚀刻硅氧烷基涂膜图案化的抗蚀剂层用作掩模并通过等离子体处理去除光致抗蚀剂层。

10. 发明授权

US4749436A Equipment for thermal stabilization process of photoresist pattern on semiconductor wafer 失效
标题翻译：半导体晶片上光致抗蚀剂图案的热稳定化处理设备
公开(公告)号：US4749436A
公开(公告)日：1988-06-07
申请号：US79257
申请日：1987-07-29
申请人： Mitsuaki Minato , Isamu Hijikata , Akira Uehara , Muneo Nakayama
发明人： Mitsuaki Minato , Isamu Hijikata , Akira Uehara , Muneo Nakayama
IPC分类号： H01L21/027 , G03C5/00 , G03F7/20 , G03F7/38 , G03F7/40 , G07F7/00 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： G03F7/2024 , Y10S438/948
摘要： An equipment (100; 200) for thermal stabilization process of photoresist pattern on semiconductor wafer comprises an ultraviolet lamp (20) by which a photoresist pattern formed on a semiconductor wafer (W) put in a process chamber (S) under vacuum pressure is irradiated with ultraviolet rays of a predetermined strength, and a heater (10) for heating the wafer to a predetermined temperature.
摘要翻译：用于半导体晶片上的光致抗蚀剂图案的热稳定化处理的设备（100; 200）包括紫外线灯（20），其中在真空压力下放置在处理室（S）中的半导体晶片（W）上形成的光致抗蚀剂图案被照射具有预定强度的紫外线，以及用于将晶片加热到预定温度的加热器（10）。

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