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1. 发明授权

US07146067B2 Microsystem switches 有权
公开(公告)号：US07146067B2
公开(公告)日：2006-12-05
申请号：US10482828
申请日：2002-06-07
申请人： Michel Despont , Ute Drechsler , Hugo E. Rothuizen , Peter Vettiger , Roland W. Widmer
发明人： Michel Despont , Ute Drechsler , Hugo E. Rothuizen , Peter Vettiger , Roland W. Widmer
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G11C23/00 , G02B6/122 , G02B6/3514 , G02B6/3518 , G02B6/3546 , G02B6/3576 , G02B6/358 , H01H1/0036 , H01H61/02 , H01H2001/0042 , H01H2001/0084 , H01H2061/006
摘要： A microsystem switch (1, 20, 25, 30, 33) has a support (2) defining a recess (3), and a flexible bridge (6) is mounted on the support (2) bridging the recess (3). The bridge (6) is shaped so as to hold selectively a concave stable state, in which the bridge bulges into the recess (3), and a convex stable state in which the bridge bulges out of the recess (3). The switch includes an actuator (8, 9; 26, 27) for effecting flexing of the bridge (6) between the stable states, and a switching element (7, 31, 34) is mounted on the bridge (6) such that movement of the bridge between the stable states moves the switching element between an on position and an off position. According to another design, a microsystem switch (40, 55) has a support (41) defining a recess (42), and an elongate torsion member (44) is mounted on the support (41) bridging the recess (42). A flexible bridge (43, 56) is mounted on the support (41) bridging the recess (42) in a direction substantially perpendicular to the torsion member (44). The bridge (43, 56) is connected to the torsion member (44) at the cross-point thereof so that a first section of the bridge extends between the cross-point and one side of the recess (42) and a second section of the bridge extends between the cross-point and the opposite side of the recess (42). The bridge (43, 56) is shaped so as to hold selectively a first stable state, in which the first section of the bridge bulges into the recess and the second section of the bridge bulges out of the recess, and a second stable state in which this configuration is reversed. A switching element (45) is mounted at the cross-point of the bridge (43, 56) and torsion member (44), and an actuator (46a, 46b; 58a, 58b) is again provided for effecting flexing of the bridge (43, 56) between the stable states. Here, movement of the bridge (43, 56) between the stable states effects twisting of the torsion member (44) and rotation of the switching element (45) between an on position and an off position. Switching devices incorporating these switches, and switching apparatus comprising arrays of such switching devices, are also provided.

2. 发明授权

US06647766B2 Device for contacting and/or modifying a surface having a cantilever and a method for production of said cantilever 有权
标题翻译：用于接触和/或改变具有悬臂的表面的装置和用于生产所述悬臂的方法
公开(公告)号：US06647766B2
公开(公告)日：2003-11-18
申请号：US09745273
申请日：2000-12-20
申请人： Michel Despont , Ute Drechsler , Mark I. Lutwyche , Hugo E. Rothuizen , Peter Vettiger
发明人： Michel Despont , Ute Drechsler , Mark I. Lutwyche , Hugo E. Rothuizen , Peter Vettiger
IPC分类号： H01L2100
CPC分类号： B81B1/008 , B81B3/0035 , G11B9/1409 , G11B9/1427 , G11B11/007 , G11B2005/0021
摘要： A device for contacting and/or modifying a surface having a cantilever connected to an almost plane carrier element staying apart from said surface, said cantilever having a tip at its loose end being in close contact to said surface. It is proposed that the cantilever stand out of the plane of said carrier element. Further, a method for producing the cantilever having a tip at its loose end. The device is suitable for thermomechanical writing and thermal readout of binary information, lithographic and imaging techniques, and for surface modification.
摘要翻译：一种用于接触和/或改变表面的装置，其具有连接到与所述表面分开的几乎平面的载体元件的悬臂，所述悬臂在其松动端具有尖端，与所述表面紧密接触。建议悬臂从所述载体元件的平面外突出。此外，一种制造悬臂的方法，其在其松动端具有尖端。该器件适用于二元信息的热机械写入和热读出，光刻和成像技术以及表面改性。

3. 发明授权

US06862925B2 Device for contacting and/or modifying a surface having a cantilever and a method for production of said cantilever 失效
标题翻译：用于接触和/或改变具有悬臂的表面的装置和用于生产所述悬臂的方法
公开(公告)号：US06862925B2
公开(公告)日：2005-03-08
申请号：US10672940
申请日：2003-09-26
申请人： Michel Desponet , Ute Drechsler , Mark I. Lutwyche , Hugo E. Rothuizen , Peter Vettiger
发明人： Michel Desponet , Ute Drechsler , Mark I. Lutwyche , Hugo E. Rothuizen , Peter Vettiger
IPC分类号： B81B1/00 , B81B3/00 , G01Q20/00 , G01Q70/16 , G11B9/00 , G11B11/00 , H01L21/00 , G01B5/28
CPC分类号： B81B1/008 , B81B3/0035 , G11B9/1409 , G11B9/1427 , G11B11/007 , G11B2005/0021
摘要： A device for contacting and/or modifying a surface having a cantilever connected to an almost plane carrier element staying apart from said surface, said cantilever having a tip at its loose end being in close contact to said surface. It is proposed that the cantilever stand out of the plane of said carrier element. Further, a method for producing the cantilever having a tip at its loose end. The device is suitable for thermomechanical writing and thermal readout of binary information, lithographic and imaging techniques, and for surface modification.
摘要翻译：一种用于接触和/或改变表面的装置，其具有连接到与所述表面分开的几乎平面的载体元件的悬臂，所述悬臂在其松动端具有尖端，与所述表面紧密接触。建议悬臂从所述载体元件的平面外突出。此外，一种制造悬臂的方法，其在其松动端具有尖端。该器件适用于二元信息的热机械写入和热读出，光刻和成像技术以及表面改性。

4. 发明授权

US07071031B2 Three-dimensional integrated CMOS-MEMS device and process for making the same 有权
标题翻译：三维集成CMOS-MEMS器件及其制造方法
公开(公告)号：US07071031B2
公开(公告)日：2006-07-04
申请号：US10446461
申请日：2003-05-28
申请人： H. Bernhard Pogge , Michel Despont , Ute Drechsler , Peter Vettiger , Roy Yu
发明人： H. Bernhard Pogge , Michel Despont , Ute Drechsler , Peter Vettiger , Roy Yu
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： B81C1/00238 , B81B2203/0307 , H01L21/76898 , H01L2224/16225
摘要： A vertically integrated structure includes a micro-electromechanical system (MEMS) and a chip for delivering signals to the MEMS. The structure includes a metal stud connecting a surface of the chip and the MEMS; the MEMS has an anchor portion having a conducting pad on an underside thereof contacting the metal stud. The MEMS is spaced from the chip by a distance corresponding to a height of the metal stud, and the MEMS includes a doped region in contact with the conducting pad. In particular, the MEMS may include a cantilever structure, with the end portion including a tip extending in the vertical direction. A support structure (e.g. of polyimide) may surround the metal stud and contact both the underside of the MEMS and the surface of the chip. A temporary carrier plate is used to facilitate handling of the MEMS and alignment to the chip.
摘要翻译：垂直集成的结构包括微机电系统（MEMS）和用于将信号传递到MEMS的芯片。该结构包括连接芯片表面和MEMS的金属螺柱; MEMS具有在其下侧具有接触金属螺柱的导电垫的锚固部分。 MEMS与芯片间隔一定距离对应于金属螺柱的高度，并且MEMS包括与导电焊盘接触的掺杂区域。特别地，MEMS可以包括悬臂结构，其中端部包括在垂直方向上延伸的尖端。支撑结构（例如聚酰亚胺）可以围绕金属螺柱并且接触MEMS的下侧和芯片的表面。使用临时载体板来促进MEMS的处理和与芯片的对准。

5. 发明授权

US06835589B2 Three-dimensional integrated CMOS-MEMS device and process for making the same 有权
标题翻译：三维集成CMOS-MEMS器件及其制造方法
公开(公告)号：US06835589B2
公开(公告)日：2004-12-28
申请号：US10294140
申请日：2002-11-14
申请人： H. Bernhard Pogge , Michel Despont , Ute Drechsler , Chandrika Prasad , Peter Vettiger , Roy Yu
发明人： H. Bernhard Pogge , Michel Despont , Ute Drechsler , Chandrika Prasad , Peter Vettiger , Roy Yu
IPC分类号： H01L2100
CPC分类号： B81C1/00238 , B81B2203/0307 , H01L21/76898 , H01L2224/16225
摘要： A vertically integrated structure includes a micro-electromechanical system (MEMS) and a chip for delivering signals to the MEMS. The MEMS has an anchor portion having a conductor therethrough, by which it is connected to a substrate. The chip is attached to the MEMS substrate in a direction normal to the substrate surface, so as to make a conductive path from the chip to the MEMS. The chip may be attached by bonding the conductor to C4 metal pads formed on the chip, or by bonding the conductor to metal studs on the chip. The MEMS substrate may be thinned before attachment to the chip, or may be removed from the underside of the MEMS. A temporary carrier plate is used to facilitate handling of the MEMS and alignment to the chip.
摘要翻译：垂直集成的结构包括微机电系统（MEMS）和用于将信号传递到MEMS的芯片。 MEMS具有一个具有穿过其中的导体的锚固部分，通过它连接到基底。芯片沿垂直于衬底表面的方向连接到MEMS衬底上，从而形成从芯片到MEMS的导电路径。可以通过将导体连接到形成在芯片上的C4金属焊盘，或者通过将导体连接到芯片上的金属螺柱来附接芯片。在附接到芯片之前MEMS基板可以被薄化，或者可以从MEMS的下侧去除。使用临时载体板来促进MEMS的处理和与芯片的对准。

6. 发明申请

US20090155727A1 METHOD OF FORMING A FLAT MEDIA TABLE FOR PROBE STORAGE DEVICE 审中-公开
标题翻译：形成探针存储器件平面介质表的方法
公开(公告)号：US20090155727A1
公开(公告)日：2009-06-18
申请号：US11955538
申请日：2007-12-13
申请人： Ute Drechsler , Mark A. Lantz , Hugo E. Rothuizen
发明人： Ute Drechsler , Mark A. Lantz , Hugo E. Rothuizen
IPC分类号： G03F7/00
CPC分类号： G11B9/14 , B82Y10/00 , G11B9/1472
摘要： A method of forming a flat media table for a probe-based storage device includes applying a first-photo-resistive coating to one side of a silicon wafer and a second photo-resistive coating to an opposite side of the silicon wafer. The silicon wafer includes a table layer, a suspension layer and a spacer layer sandwiched therebetween. The first photoresistive coating is applied to the table layer and the second photoresistive coating is applied to the suspension layer. A first pattern is formed through photolithography in the second photoresistive coating and etched into the suspension layer. A second pattern is formed through photolithography in the first photoresistive coating and etched into the table layer. A portion of the table layer is released from the suspension layer though selective etching of the spacer layer so as to form a plurality of stand-offs defined by remaining portions of the spacer layer.
摘要翻译：形成用于基于探针的存储装置的平坦介质台的方法包括将第一光阻涂层施加到硅晶片的一侧，将第二光阻涂层施加到硅晶片的相反侧。硅晶片包括台层，悬置层和夹在其间的间隔层。将第一光致抗蚀剂涂层施加到台面层，并将第二光致抗蚀剂涂层施加到悬浮层。在第二光致抗蚀剂涂层中通过光刻形成第一图案并蚀刻到悬浮层中。在第一光致抗蚀剂涂层中通过光刻形成第二图案并蚀刻到表层中。通过选择性蚀刻间隔层，使表层的一部分从悬浮层中释放，以形成由间隔层的剩余部分限定的多个支座。

7. 发明授权

US08332961B2 Platinum silicide tip apices for probe-based technologies 有权
标题翻译：用于探针技术的铂硅化物尖端顶点
公开(公告)号：US08332961B2
公开(公告)日：2012-12-11
申请号：US12234816
申请日：2008-09-22
申请人： Harish Bhaskaran , Michel Despont , Ute Drechsler , Abu Sebastian
发明人： Harish Bhaskaran , Michel Despont , Ute Drechsler , Abu Sebastian
IPC分类号： G01Q60/40 , G01Q10/00
CPC分类号： G01Q60/40
摘要： Tips including a platinum silicide at an apex of a single crystal silicon tip are provided herein. Also, techniques for creating a tip are provided. The techniques include depositing an amount of platinum (Pt) on a single crystal silicon tip, annealing the platinum and single crystal silicon tip to form a platinum silicide, and selectively etching the platinum with respect to the formed platinum silicide.
摘要翻译：本文提供了包括单晶硅尖端顶点处的铂硅化物的提示。此外，提供了用于创建提示的技术。这些技术包括在单晶硅尖端上沉积一定量的铂（Pt），使铂和单晶硅尖端退火以形成铂硅化物，并相对于形成的铂硅化物选择性地蚀刻铂。

8. 发明授权

US08201325B2 Method for producing an integrated device 有权
标题翻译：集成装置的制造方法
公开(公告)号：US08201325B2
公开(公告)日：2012-06-19
申请号：US12275276
申请日：2008-11-21
申请人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
发明人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
IPC分类号： H05K3/30
CPC分类号： B81C1/00373 , B81C3/008 , B81C2201/0185 , H01L24/95 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , Y10T29/5313
摘要： A method for producing an integrated device. A source substrate is provided, the source substrate carrying one or more components to be attached to a receiver surface having a uneven topography. The source substrate includes a deformable layer on a surface on which the one or more components are carried. The source substrate is aligned such that said one or more components carried thereon are associated with contact areas of the receiver surface. The source substrate and the receiver surface are moved towards each other such that the one or more components are brought into contact with the contact areas wherein the deformable layer is at least partially deformed. The source substrate is removed such that the one or more of the components remain located on the contact areas of the receiver surface.
摘要翻译：一种集成装置的制造方法。提供源极衬底，源极衬底承载要附着到具有不平坦的形貌的接收器表面的一个或多个部件。源极基板在其上承载有一个或多个部件的表面上包括可变形层。源极衬底被对准，使得其上承载的所述一个或多个部件与接收器表面的接触区域相关联。源极基板和接收器表面朝向彼此移动，使得一个或多个部件与可变形层至少部分变形的接触区域接触。去除源极衬底，使得一个或多个部件保持位于接收器表面的接触区域上。

9. 发明授权

US07566939B2 Fabrication of silicon micro-mechanical structures 失效
标题翻译：硅微机械结构的制造
公开(公告)号：US07566939B2
公开(公告)日：2009-07-28
申请号：US11149921
申请日：2005-06-10
申请人： Michel Despont , Roy H. Magnuson , Ute Drechsler
发明人： Michel Despont , Roy H. Magnuson , Ute Drechsler
IPC分类号： H01L29/82
CPC分类号： H01L21/30604 , B81B2201/12 , B81B2203/0118 , B81C1/00801 , B81C2201/0107 , B81C2201/0114 , B81C2201/0133 , C23F13/14
摘要： A method for protecting a material of a microstructure comprising the material and a noble metal layer against undesired galvanic etching during manufacture, the method comprises forming on the structure a sacrificial metal layer having a lower redox potential than the material, the sacrificial metal layer being electrically connected to the noble metal layer.
摘要翻译：一种用于在制造期间保护包含该材料的微结构材料和贵金属层以防止不期望的电化学蚀刻的方法，所述方法包括在所述结构上形成具有比所述材料更低的氧化还原电位的牺牲金属层，所述牺牲金属层是电连接到贵金属层。

10. 发明授权

US08847079B2 Method for producing an integrated device 有权
标题翻译：集成装置的制造方法
公开(公告)号：US08847079B2
公开(公告)日：2014-09-30
申请号：US13470491
申请日：2012-05-14
申请人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
发明人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
IPC分类号： H05K1/00 , H05K1/16 , B81C1/00 , B81C3/00
CPC分类号： B81C1/00373 , B81C3/008 , B81C2201/0185 , H01L24/95 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , Y10T29/5313
摘要： An article for producing an integrated device includes a deformable layer and one or more components releasably attached on one surface of the deformable layer.
摘要翻译：用于制造集成装置的制品包括可变形层和可释放地附接在可变形层的一个表面上的一个或多个部件。

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