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1. 发明授权

US07515202B2 Compact camera module 失效
标题翻译：紧凑型相机模块
公开(公告)号：US07515202B2
公开(公告)日：2009-04-07
申请号：US10812795
申请日：2004-03-30
申请人： Masahiro Saito , Satoshi Ajiki , Kazuhiro Yaegashi , Yukihiro Furusawa , Hironori Nakajo , Michio Sasaki
发明人： Masahiro Saito , Satoshi Ajiki , Kazuhiro Yaegashi , Yukihiro Furusawa , Hironori Nakajo , Michio Sasaki
IPC分类号： H04N5/225
CPC分类号： G02B27/0006 , G02B7/022 , H04N5/2253 , H04N5/2254 , H04N5/2257 , H05K3/403
摘要： A compact camera module is disclosed that is capable of preventing adhesion of dust to an image pickup device in the compact camera module. The compact camera module includes a lens unit including a lens and a lens holder holding the lens therein and an image pickup unit attached to the lens unit. The image pickup unit includes a circuit board, an image pickup device on the circuit board, a cover member arranged on the circuit board to cover the image pickup device, and an optical filter arranged with respect to the cover member to face the image pickup device. The image pickup device is disposed in a substantially closed space formed by the circuit board, the cover member, and the optical filter. After the image pickup device is mounted on the circuit board, the image pickup device is disposed in the substantially closed space, and therefore, the compact camera module can be assembled with no occurrence of dust adhesion to the image pickup device.
摘要翻译：公开了一种紧凑型相机模块，其能够防止灰尘附着到小型照相机模块中的图像拾取装置。紧凑型相机模块包括透镜单元，其包括透镜和将透镜保持在其中的透镜保持器以及附接到透镜单元的图像拾取单元。图像拾取单元包括电路板，电路板上的图像拾取装置，布置在电路板上以覆盖图像拾取装置的盖构件和相对于盖构件布置成面向图像拾取装置的滤光器。图像拾取装置设置在由电路板，盖构件和滤光器形成的大致封闭的空间中。在图像拾取装置安装在电路板上之后，图像拾取装置设置在基本封闭的空间中，因此，可以组装小型相机模块而不会对图像拾取装置产生灰尘附着。

2. 发明授权

US07728398B2 Micro camera module and method of manufacturing the same 失效
标题翻译：微型相机模块及其制造方法
公开(公告)号：US07728398B2
公开(公告)日：2010-06-01
申请号：US11476160
申请日：2006-06-28
申请人： Hironori Nakajo , Hiroshi Yoshikawa , Michio Sasaki , Akihiro Hori
发明人： Hironori Nakajo , Hiroshi Yoshikawa , Michio Sasaki , Akihiro Hori
IPC分类号： H01L31/058
CPC分类号： H04N5/2253 , H01L27/14618 , H01L27/14632 , H01L2224/05001 , H01L2224/05009 , H01L2224/051 , H01L2224/05548 , H01L2224/13 , H01L2924/00014 , H04N5/2254 , H04N5/2257 , H01L2224/05599
摘要： A semiconductor chip constituting an image pickup device is provided on a substrate and includes a connection terminal and an image pickup portion. A lens sheet having a lens portion is provided on the semiconductor chip. A groove is formed in at least the substrate to expose the connection terminal. A conductor pattern is formed in the groove and has one end electrically connected to the connection terminal.
摘要翻译：构成图像拾取装置的半导体芯片设置在基板上，并且包括连接端子和图像拾取部分。具有透镜部分的透镜片设置在半导体芯片上。至少在衬底中形成凹槽以暴露连接端子。导体图案形成在凹槽中，并且一端电连接到连接端子。

5. 发明申请

US20070019102A1 Micro camera module and method of manufacturing the same 失效
标题翻译：微型相机模块及其制造方法
公开(公告)号：US20070019102A1
公开(公告)日：2007-01-25
申请号：US11476160
申请日：2006-06-28
申请人： Hironori Nakajo , Hiroshi Yoshikawa , Michio Sasaki , Akihiro Hori
发明人： Hironori Nakajo , Hiroshi Yoshikawa , Michio Sasaki , Akihiro Hori
IPC分类号： H04N5/225
CPC分类号： H04N5/2253 , H01L27/14618 , H01L27/14632 , H01L2224/05001 , H01L2224/05009 , H01L2224/051 , H01L2224/05548 , H01L2224/13 , H01L2924/00014 , H04N5/2254 , H04N5/2257 , H01L2224/05599
摘要： A semiconductor chip constituting an image pickup device is provided on a substrate and includes a connection terminal and an image pickup portion. A lens sheet having a lens portion is provided on the semiconductor chip. A groove is formed in at least the substrate to expose the connection terminal. A conductor pattern is formed in the groove and has one end electrically connected to the connection terminal.
摘要翻译：构成图像拾取装置的半导体芯片设置在基板上，并且包括连接端子和图像拾取部分。具有透镜部分的透镜片设置在半导体芯片上。至少在衬底中形成凹槽以暴露连接端子。导体图案形成在凹槽中，并且一端电连接到连接端子。

6. 发明授权

US06639555B1 Antenna unit, communication system and digital television receiver 失效
标题翻译：天线单元，通信系统和数字电视接收机
公开(公告)号：US06639555B1
公开(公告)日：2003-10-28
申请号：US09486332
申请日：2000-05-31
申请人： Joji Kane , Takasi Yosida , Noboru Nomura , Michio Sasaki , Akinori Yanase , Satoshi Yamada
发明人： Joji Kane , Takasi Yosida , Noboru Nomura , Michio Sasaki , Akinori Yanase , Satoshi Yamada
IPC分类号： H01Q138
CPC分类号： H01Q9/14 , H01Q1/32 , H01Q1/36 , H01Q3/26 , H01Q5/321 , H01Q5/371 , H01Q5/378 , H01Q5/40 , H01Q5/50 , H01Q9/0414 , H01Q9/0421 , H01Q9/42 , H01Q21/28 , H01Q21/30 , H01Q23/00
摘要： An antenna device comprising a conductive earth substrate, a receiving element located in the proximity of said conductive earth substrate and having a receiving terminal, and a transmitting element located in the proximity of said receiving element and having a transmitting terminal, characterized in that an end of said receiving element and an end of said transmitting element are connected to said conductive earth substrate for grounding through a common portion and the frequency band of said receiving element is different from that of said transmitting element.
摘要翻译：一种天线装置，包括导电接地衬底，位于所述导电接地衬底附近并具有接收端子的接收元件和位于所述接收元件附近并具有发射端子的发射元件，其特征在于，端部并且所述发送元件的端部连接到所述导电接地基板，用于通过公共部分接地，并且所述接收元件的频带不同于所述发送元件的频带。

7. 发明授权

US06521926B1 Mos type image sensor 有权
标题翻译： Mos型图像传感器
公开(公告)号：US06521926B1
公开(公告)日：2003-02-18
申请号：US09695989
申请日：2000-10-26
申请人： Michio Sasaki
发明人： Michio Sasaki
IPC分类号： H01L31062
CPC分类号： H04N5/35518 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： A MOS type image sensor has an image area that consists of a matrix of pixels and a peripheral circuitry area that drives the image area. To make the MOS type image sensor finer and finer, each of the pixels consists of a second p-well region having a lower impurity concentration than a first p-well region disposed in the peripheral circuitry area; a photodiode having a first main electrode region made of the second p-well region and a second main electrode region formed as a first n-diffusion layer disposed at the surface of the second p-well region; a read transistor having a first main electrode region made of the first n-diffusion layer, a second main electrode region formed as a second n-diffusion layer disposed at the surface of the second p-well region, a gate insulation film disposed on the surface of the second p-well region between the first and second n-diffusion layers, and a gate electrode disposed on the gate insulation film and connected to a read signal line; and an amplification transistor disposed in a third p-well region, having a gate electrode connected to the second main electrode region of the read transistor, a first main electrode region connected to an output signal line, and a second main electrode region. Since the impurity concentration of the second p-well region is low, scaled design rules are employable without causing “white pixels”, sensitivity deterioration, signal read voltage increase, or short-channel effect.
摘要翻译： MOS型图像传感器具有由像素矩阵和驱动图像区域的外围电路区域组成的图像区域。为了使MOS型图像传感器更精细，每个像素由具有比设置在外围电路区域中的第一p阱区域的杂质浓度低的第二p阱区域组成; 具有由第二p阱区域制成的第一主电极区域和形成为设置在第二p阱区域的表面处的第一n扩散层的第二主电极区域的光电二极管; 具有由第一n型扩散层制成的第一主电极区域的第二主电极区域，设置在第二p阱区域的表面处的第二n型扩散层形成的第二主电极区域，在第一和第二n-扩散层之间的第二p阱区的表面和设置在栅极绝缘膜上并连接到读取信号线的栅电极; 以及放大晶体管，其设置在第三p阱区域中，具有连接到所述读取晶体管的第二主电极区域的栅电极，连接到输出信号线的第一主电极区域和第二主电极区域。由于第二p阱区域的杂质浓度低，所以可以使用缩放设计规则而不引起“白色像素”，灵敏度劣化，信号读取电压增加或短通道效应。

8. 发明授权

US5428231A Solid-state image device including charge-coupled devices having improved electrode structure 失效
标题翻译：固态图像器件包括具有改进的电极结构的电荷耦合器件
公开(公告)号：US5428231A
公开(公告)日：1995-06-27
申请号：US269349
申请日：1994-06-30
申请人： Nagataka Tanaka , Yoshiyuki Matsunaga , Michio Sasaki , Hirofumi Yamashita , Nobuo Nakamura
发明人： Nagataka Tanaka , Yoshiyuki Matsunaga , Michio Sasaki , Hirofumi Yamashita , Nobuo Nakamura
IPC分类号： H01L21/28 , H01L27/148 , H01L29/423 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L29/42396 , H01L27/14831
摘要： A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoelectric conversion accumulation sections, and a horizontal CCD for receiving and horizontally transferring the signal charges transferred by the vertical CCDs. A gap between transfer electrodes of the horizontal CCD is less than a gap between transfer electrodes of the vertical CCDs. The transfer electrodes of the vertical CCDs have a single-layer electrode structure formed by patterning a first polysilicon film. The transfer electrodes of the horizontal CCD have an overlapping double-layer electrode structure comprising alternately arranged electrodes formed by patterning the first polysilicon film and electrodes intervening between the alternately arranged electrodes which are formed by patterning a second polysilicon film. The gap between the electrodes of the horizontal CCD is determined by a silicon oxide film obtained by subjecting the alternately arranged electrodes of the first polysilicon film to thermal oxidation.
摘要翻译：固态成像装置包括在半导体基板上二维布置的多个光电转换累积部分，用于垂直转移从光电转换累积部分读出的信号电荷的多个垂直CCD以及用于接收和水平的水平CCD 传输由垂直CCD传输的信号电荷。水平CCD的转印电极之间的间隙小于垂直CCD的转印电极之间的间隙。垂直CCD的转印电极具有通过图案化第一多晶硅膜形成的单层电极结构。水平CCD的转移电极具有重叠的双层电极结构，其包括交替排列的电极，其通过对第一多晶硅膜进行构图而形成，并且通过图案化第二多晶硅膜而形成交替排列的电极之间的电极。水平CCD的电极之间的间隙由通过对第一多晶硅膜的交替排列的电极进行热氧化而获得的氧化硅膜确定。

9. 发明授权

US06674470B1 MOS-type solid state imaging device with high sensitivity 失效
标题翻译：高灵敏度的MOS型固态成像装置
公开(公告)号：US06674470B1
公开(公告)日：2004-01-06
申请号：US08933975
申请日：1997-09-19
申请人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
发明人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
IPC分类号： H04N314
CPC分类号： H04N5/3765 , H04N5/3575 , H04N5/37457
摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.
摘要翻译：固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管，用于选择单元格。读出晶体管形成在半导体衬底中的第一器件区域中。复位晶体管形成在半导体衬底中的第二器件区域中。读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

10. 发明授权

US06608594B1 Antenna apparatus and communication system 失效
标题翻译：天线设备和通信系统
公开(公告)号：US06608594B1
公开(公告)日：2003-08-19
申请号：US09680263
申请日：2000-10-05
申请人： Joji Kane , Hirotaka Ishihara , Noboru Nomura , Shinji Naka , Michio Sasaki , Akinori Yanase , Satoshi Yamada , Hirokazu Kaidou , Katsuya Tanioka
发明人： Joji Kane , Hirotaka Ishihara , Noboru Nomura , Shinji Naka , Michio Sasaki , Akinori Yanase , Satoshi Yamada , Hirokazu Kaidou , Katsuya Tanioka
IPC分类号： H01Q138
CPC分类号： H01Q1/38 , H01Q5/378 , H01Q5/385 , H01Q5/40 , H01Q9/0407 , H01Q9/065 , H01Q19/005
摘要： An antenna apparatus having at least one radiating element. A second radiating element is located opposite a first radiating element. Earth is on the side opposite to the first radiating element with respect to the second radiating element thus opposite to the second radiating element. The second radiating element intervenes between the first radiating element and earth. Either the first or the second radiating element employs a feed terminal.
摘要翻译：一种具有至少一个辐射元件的天线装置。第二辐射元件位于与第一辐射元件相对的位置。地球相对于第二辐射元件在与第一辐射元件相对的一侧上，因此与第二辐射元件相对。第二辐射元件介于第一辐射元件和地之间。第一或第二辐射元件都使用馈电端子。

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