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1. 发明申请

US20070051471A1 Methods and apparatus for stripping 审中-公开
标题翻译：剥离方法和装置
公开(公告)号：US20070051471A1
公开(公告)日：2007-03-08
申请号：US10264664
申请日：2002-10-04
申请人： Mark Kawaguchi , Elizabeth Pavel , James Papanu , Jonathan Mohn , John Yamartino , Christopher Lane , Michael Barnes , Robert Wunar
发明人： Mark Kawaguchi , Elizabeth Pavel , James Papanu , Jonathan Mohn , John Yamartino , Christopher Lane , Michael Barnes , Robert Wunar
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , G03F7/427 , H01J37/321 , H01J37/32357 , H01J2237/3342
摘要： One embodiment of the present invention is a stripping reactor that includes: (a) a remote plasma source disposed to output a gas; (b) a gas distribution plate connected to ground that transmits the gas output from the remote plasma source to a processing chamber; (c) a wafer support disposed in the processing chamber; (d) a wafer support assembly disposed about the wafer pedestal that includes an outer conductive peripheral structure connected to ground; and (e) an RF power supply connected to supply RF power to the wafer support.
摘要翻译：本发明的一个实施例是一种汽提反应器，其包括：（a）设置成输出气体的远程等离子体源; （b）连接到地面的气体分配板，其将从远程等离子体源输出的气体传送到处理室; （c）设置在处理室中的晶片支撑件; （d）设置在晶片基座周围的晶片支撑组件，其包括连接到地的外部导电外围结构; 和（e）连接以向晶片支架提供RF功率的RF电源。

2. 发明授权

US07972444B2 Workpiece support with fluid zones for temperature control 有权
标题翻译：工件支撑带流体区域进行温度控制
公开(公告)号：US07972444B2
公开(公告)日：2011-07-05
申请号：US11936576
申请日：2007-11-07
申请人： Martin L. Zucker , Daniel J. Devine , Vladimir Nagorny , Jonathan Mohn
发明人： Martin L. Zucker , Daniel J. Devine , Vladimir Nagorny , Jonathan Mohn
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68 , C23C14/50 , C23C14/541 , C23C16/4586 , F27B17/0025 , F27D5/0037 , H01L21/67109 , H01L21/67248
摘要： A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.
摘要翻译：公开了一种限定工件接收表面的工件支撑件。工件支撑件包括多个流体区域。诸如气体的流体被供给到流体区域中以与工件支撑件上的工件接触。流体可以具有选择的热传导特性，用于在特定位置控制工件的温度。根据本公开，至少某些流体区域处于不同的方位位置。以这种方式，工件的温度不仅可以在径向方向上而且在角度方向上进行调节。

3. 发明申请

US20070019278A1 Spatial light modulator with perforated hinge 失效
标题翻译：带有铰链的空间光调制器
公开(公告)号：US20070019278A1
公开(公告)日：2007-01-25
申请号：US11489403
申请日：2006-07-19
申请人： Jonathan Mohn
发明人： Jonathan Mohn
IPC分类号： G02B26/00
CPC分类号： G02B26/0841
摘要： A spatial light modulator (SLM) is disclosed that increases speed and efficiency of an SLM through the use of a perforated hinge. The hinge may take many forms, but generally includes an elongated body having holes therein along its longitudinal direction. One or more electrodes are charged with a predetermined voltage in order rotate a reflecting surface towards the electrodes through electrostatic attraction. The perforations within the hinge results in the hinge being made from less material so that it is less sensitive to hinge thickness variations that can occur during the manufacturing process. Consequently, the perforated hinge allows for more stable, uniform mirror rotation.
摘要翻译：公开了一种通过使用穿孔铰链来提高SLM的速度和效率的空间光调制器（SLM）。铰链可以具有许多形式，但是通常包括沿其纵向方向具有孔的细长体。一个或多个电极以预定电压充电，以便通过静电吸引将反射表面朝向电极旋转。铰链内的穿孔导致铰链由较少的材料制成，使得其对于在制造过程中可能发生的铰链厚度变化较不敏感。因此，穿孔铰链允许更稳定，均匀的镜面旋转。

4. 发明授权

US09184072B2 Advanced multi-workpiece processing chamber 有权
标题翻译：先进的多工件加工室
公开(公告)号：US09184072B2
公开(公告)日：2015-11-10
申请号：US11829258
申请日：2007-07-27
申请人： Daniel J. Devine , Charles Crapuchettes , Dixit Desai , Rene George , Vincent C. Lee , Yuya Matsuda , Jonathan Mohn , Ryan M. Pakulski , Stephen E. Savas , Martin Zucker
发明人： Daniel J. Devine , Charles Crapuchettes , Dixit Desai , Rene George , Vincent C. Lee , Yuya Matsuda , Jonathan Mohn , Ryan M. Pakulski , Stephen E. Savas , Martin Zucker
IPC分类号： B01J19/08 , B23P17/04 , H01L21/67
CPC分类号： H01L21/6719 , H01L21/67069 , Y10T29/49
摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.
摘要翻译：描述了用于在处理过程中处理工件的装置和方法。多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。

5. 发明申请

US20090114158A1 Workpiece Support With Fluid Zones For Temperature Control 有权
标题翻译：工件支持流体区域进行温度控制
公开(公告)号：US20090114158A1
公开(公告)日：2009-05-07
申请号：US11936576
申请日：2007-11-07
申请人： Martin L. Zucker , Daniel J. Devine , Vladimir Nagorny , Jonathan Mohn
发明人： Martin L. Zucker , Daniel J. Devine , Vladimir Nagorny , Jonathan Mohn
IPC分类号： C23C16/00 , B01F3/06 , F27D13/00 , F26B19/00
CPC分类号： H01L21/68 , C23C14/50 , C23C14/541 , C23C16/4586 , F27B17/0025 , F27D5/0037 , H01L21/67109 , H01L21/67248
摘要： A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.
摘要翻译：公开了一种限定工件接收表面的工件支撑件。工件支撑件包括多个流体区域。诸如气体的流体被供给到流体区域中以与工件支撑件上的工件接触。流体可以具有选择的热传导特性，用于在特定位置控制工件的温度。根据本公开，至少某些流体区域处于不同的方位位置。以这种方式，工件的温度不仅可以在径向方向上而且在角度方向上进行调节。

6. 发明申请

US20090028761A1 ADVANCED MULTI-WORKPIECE PROCESSING CHAMBER 有权
标题翻译：先进的多功能加工室
公开(公告)号：US20090028761A1
公开(公告)日：2009-01-29
申请号：US11829258
申请日：2007-07-27
申请人： Daniel J. Devine , Charles Crapuchettes , Dixit Desai , Rene George , Vincent C. Lee , Yuya Matsuda , Jonathan Mohn , Ryan M. Pakulski , Stephen E. Savas , Martin Zucker
发明人： Daniel J. Devine , Charles Crapuchettes , Dixit Desai , Rene George , Vincent C. Lee , Yuya Matsuda , Jonathan Mohn , Ryan M. Pakulski , Stephen E. Savas , Martin Zucker
IPC分类号： B01J19/08 , B23P17/04
CPC分类号： H01L21/6719 , H01L21/67069 , Y10T29/49
摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.
摘要翻译：描述了用于在处理过程中处理工件的装置和方法。多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。

7. 发明申请

US20060087717A1 Mirror structure with single crystal silicon cross-member 有权
标题翻译：具有单晶硅横梁的镜面结构
公开(公告)号：US20060087717A1
公开(公告)日：2006-04-27
申请号：US11299140
申请日：2005-12-08
申请人： Brian McGinley , Jonathan Mohn , Howard Woo
发明人： Brian McGinley , Jonathan Mohn , Howard Woo
IPC分类号： G02B26/00
CPC分类号： G02B26/0841
摘要： Hydrogen cleave silicon process for light modulating mirror structure using single crystal silicon as the base cross-member. Existing processes use two critical alignment steps that can contribute to higher actuation voltages and result in lower manufacturing yields. The hydrogen cleave process simplifies the manufacturing process to one step: transferring a thin film of single crystal silicon to the CMOS substrate, resulting in minimal alignment error and providing large bonding area.
摘要翻译：氢解裂硅工艺用于光调制镜结构，采用单晶硅作为基底横截面。现有工艺使用两个关键对准步骤，这些步骤可以有助于更高的致动电压并导致较低的制造产量。氢裂解过程将制造过程简化为一步：将单晶硅薄膜转移到CMOS衬底，导致最小的对准误差并提供较大的结合面积。

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