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1. 发明申请

US20170288070A1 TRI-LAYER SEMICONDUCTOR STACKS FOR PATTERNING FEATURES ON SOLAR CELLS 审中-公开
公开(公告)号：US20170288070A1
公开(公告)日：2017-10-05
申请号：US15089381
申请日：2016-04-01
申请人： Kieran Mark Tracy , David D. Smith , Venkatasubramani Balu , Asnat Masad , Ann Waldhauer
发明人： Kieran Mark Tracy , David D. Smith , Venkatasubramani Balu , Asnat Masad , Ann Waldhauer
IPC分类号： H01L31/0236 , H01L31/0747 , H01L31/20 , H01L31/0216
CPC分类号： H01L31/02363 , H01L31/022425 , H01L31/022441 , H01L31/035281 , H01L31/0516 , H01L31/0682 , H01L31/0745 , H01L31/0747 , Y02E10/50 , Y02E10/546 , Y02E10/547 , Y02E10/548
摘要： Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

2. 发明申请

US20170222072A1 SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 审中-公开
公开(公告)号：US20170222072A1
公开(公告)日：2017-08-03
申请号：US15493021
申请日：2017-04-20
申请人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
发明人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/0236 , H01L31/18 , H01L31/0368
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/182 , H01L31/202 , H01L31/208 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

3. 发明申请

US20160043267A1 SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 有权
公开(公告)号：US20160043267A1
公开(公告)日：2016-02-11
申请号：US14919049
申请日：2015-10-21
申请人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
发明人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/0368 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/182 , H01L31/202 , H01L31/208 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

4. 发明授权

US09634177B2 Solar cell emitter region fabrication with differentiated P-type and N-type region architectures 有权
公开(公告)号：US09634177B2
公开(公告)日：2017-04-25
申请号：US14919049
申请日：2015-10-21
申请人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
发明人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068 , H01L31/20 , H01L31/0236 , H01L31/0368 , H01L31/0216 , H01L31/0745 , H01L31/0747
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/182 , H01L31/202 , H01L31/208 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

5. 发明申请

US20150380581A1 PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON 审中-公开
标题翻译：太阳能电池的光接收表面与晶体硅的钝化
公开(公告)号：US20150380581A1
公开(公告)日：2015-12-31
申请号：US14317672
申请日：2014-06-27
申请人： Michael C. Johnson , Kieran Mark Tracy , Princess Carmi Tomada , David D. Smith , Seung Bum Rim , Périne Jaffrennou
发明人： Michael C. Johnson , Kieran Mark Tracy , Princess Carmi Tomada , David D. Smith , Seung Bum Rim , Périne Jaffrennou
IPC分类号： H01L31/0368 , H01L31/028 , H01L31/18 , H01L31/077 , H01L31/0236 , H01L31/0216 , H01L31/0376
CPC分类号： H01L31/02167 , H01L31/02363 , H01L31/0682 , H01L31/0745 , H01L31/0747 , Y02E10/547
摘要： Methods of passivating light-receiving surfaces of solar cells with crystalline silicon, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. One or both of the intrinsic silicon layer and the N-type silicon layer is a micro- or poly-crystalline silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type micro- or poly-crystalline silicon layer disposed on the passivating dielectric layer.
摘要翻译：描述了用结晶硅钝化太阳能电池的光接收表面的方法和所得的太阳能电池。在一个示例中，太阳能电池包括具有光接收表面的硅衬底。本征硅层设置在硅衬底的光接收表面之上。 N型硅层设置在本征硅层上。本征硅层和N型硅层中的一个或两个是微晶或多晶硅层。在另一示例中，太阳能电池包括具有受光面的硅基板。钝化介质层设置在硅衬底的光接收表面上。设置在钝化介电层上的N型微晶或多晶硅层。

6. 发明申请

US20160177439A1 SPUTTER TOOL 审中-公开
标题翻译：飞溅工具
公开(公告)号：US20160177439A1
公开(公告)日：2016-06-23
申请号：US14578332
申请日：2014-12-19
申请人： Yu-Chen Shen , Taiqing Qiu , Robe Woehl , Kieran Mark Tracy , Mukul Agrawal
发明人： Yu-Chen Shen , Taiqing Qiu , Robe Woehl , Kieran Mark Tracy , Mukul Agrawal
IPC分类号： C23C14/50 , C23C14/34
CPC分类号： C23C14/50 , C23C14/165 , C23C14/34 , C23C14/3464 , H01J37/32715
摘要： Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.
摘要翻译：描述了溅射工具。在一个实施例中，用于支撑晶片的装置包括具有用于接收晶片的凹陷的托盘。托盘包括在凹陷下方的开口，并且凹陷中的边缘将晶片支撑在开口上。盖子至少部分地覆盖开口。在一个示例中，盖可以是具有一个或多个孔的板，并且管可以位于盖中的每个孔下方。在一个实施例中，晶片处理系统包括处理室和具有凹陷的托盘以接收晶片。托盘在凹陷下方具有开口，并且凹陷中的边缘将晶片支撑在开口上方。在一个这样的实施例中，盖至少部分地覆盖开口。根据一个实施例，能量吸收材料设置在托盘中的开口下方。

7. 发明申请

US20150380574A1 PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH HIGH ENERGY GAP (EG) MATERIALS 有权
标题翻译：具有高能隙（EG）材料的太阳能电池的光接收表面的钝化
公开(公告)号：US20150380574A1
公开(公告)日：2015-12-31
申请号：US14317686
申请日：2014-06-27
申请人： Michael C. Johnson , Kieran Mark Tracy , Seung Bum Rim , Jara Fernandez Martin , Périne Jaffrennou , Julien Penaud
发明人： Michael C. Johnson , Kieran Mark Tracy , Seung Bum Rim , Jara Fernandez Martin , Périne Jaffrennou , Julien Penaud
IPC分类号： H01L31/0216 , H01L31/18 , H01L31/0224 , H01L31/0304 , H01L31/0236
CPC分类号： H01L31/02167 , H01L31/02363 , H01L31/0682 , Y02E10/547
摘要： Methods of passivating light-receiving surfaces of solar cells with high energy gap (Eg) materials, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A Group III-nitride material layer is disposed above the passivating dielectric layer. In another example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A large direct band gap material layer is disposed above the passivating dielectric layer, the large direct band gap material layer having an energy gap (Eg) of at least approximately 3.3. An anti-reflective coating (ARC) layer disposed on the large direct band gap material layer, the ARC layer comprising a material different from the large direct band gap material layer.
摘要翻译：描述了以高能隙（Eg）材料钝化太阳能电池的光接收表面的方法和所得到的太阳能电池。在一个示例中，太阳能电池包括具有受光面的基板。钝化介质层设置在基板的光接收表面上。 III族氮化物材料层设置在钝化介质层的上方。在另一示例中，太阳能电池包括具有光接收表面的基板。钝化介质层设置在基板的光接收表面上。大的直接带隙材料层设置在钝化介电层之上，大的直接带隙材料层具有至少约3.3的能隙（Eg）。设置在大直接带隙材料层上的抗反射涂层（ARC）层，ARC层包括与大直接带隙材料层不同的材料。

8. 发明申请

US20170149383A1 PHOTONIC DEGRADATION MONITORING FOR SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：US20170149383A1
公开(公告)日：2017-05-25
申请号：US15425709
申请日：2017-02-06
申请人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
发明人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
IPC分类号： H02S50/15 , G01N21/64
CPC分类号： H02S50/15 , G01N21/6408 , G01N21/6489 , G01N2201/06113 , G01N2201/0621
摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

9. 发明授权

US09564854B2 Photonic degradation monitoring for semiconductor devices 有权
标题翻译：半导体器件的光子劣化监测
公开(公告)号：US09564854B2
公开(公告)日：2017-02-07
申请号：US14705268
申请日：2015-05-06
申请人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
发明人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
IPC分类号： G01N21/64 , H02S50/15
CPC分类号： H02S50/15 , G01N21/6408 , G01N21/6489 , G01N2201/06113 , G01N2201/0621
摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
摘要翻译：对半导体测试方法和半导体测试设备进行描述。在一个示例中，用于测试半导体的方法可以包括在半导体上施加光以引起光子降解。该方法还可以包括接收从半导体施加的光引起的光致发光测量，并从光致发光测量监测半导体的光子劣化。

10. 发明申请

US20160329864A1 PHOTONIC DEGRADATION MONITORING FOR SEMICONDUCTOR DEVICES 有权
标题翻译：用于半导体器件的光子降解监测
公开(公告)号：US20160329864A1
公开(公告)日：2016-11-10
申请号：US14705268
申请日：2015-05-06
申请人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
发明人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
IPC分类号： H02S50/15 , G01N21/64
CPC分类号： H02S50/15 , G01N21/6408 , G01N21/6489 , G01N2201/06113 , G01N2201/0621
摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
摘要翻译：对半导体测试方法和半导体测试设备进行描述。在一个示例中，用于测试半导体的方法可以包括在半导体上施加光以引起光子降解。该方法还可以包括接收从半导体施加的光引起的光致发光测量，并从光致发光测量监测半导体的光子劣化。

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