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1. 发明授权

US09040953B2 Storage device 有权
标题翻译：储存设备
公开(公告)号：US09040953B2
公开(公告)日：2015-05-26
申请号：US14194787
申请日：2014-03-02
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yusuke Arayashiki , Hidenori Miyagawa , Tomohito Kawashima
IPC分类号： H01L47/00 , H01L29/82 , H01L43/00 , H01L21/20 , G11C11/00 , H01L45/00
CPC分类号： H01L45/085 , H01L27/2481 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/16 , H01L45/1608 , H01L45/1675
摘要： According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.
摘要翻译：根据一个实施例，存储装置包括第一电极，第二电极，设置在第一电极和第二电极之间的电阻变化层和在第一电极和电阻变化层之间形成为岛状的离子金属颗粒，以及其包含可在电阻变化层内移动的金属。第一电极和第二电极由与金属相比更不可能离子化的材料形成，并且第一电极在离子金属颗粒周围的区域中与电阻变化层接触。

2. 发明授权

US08822966B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08822966B2
公开(公告)日：2014-09-02
申请号：US13770463
申请日：2013-02-19
申请人： Kabushiki Kaisha Toshiba
发明人： Kensuke Takahashi , Masanobu Baba , Yusuke Arayashiki
IPC分类号： H01L29/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148 , H01L45/1675
摘要： A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.
摘要翻译：非易失性存储器件具有包括电阻变化层，第一电极和第二电极的存储单元。由于金属离子响应于施加在电极之间的电压而从第一电极的转移，电阻变化层在高电阻状态和低电阻状态之间切换。第一电极形成在电阻变化层的第一侧上，并提供金属离子。第二电极形成在电阻变化层的第二侧上。在具有电阻变化层的第一电极和第二电极之间形成存储单元区域。存储器件还包括具有比电阻变化层更高的介电常数的高介电常数层。

3. 发明授权

US09276205B2 Storage device 有权
公开(公告)号：US09276205B2
公开(公告)日：2016-03-01
申请号：US14693533
申请日：2015-04-22
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yusuke Arayashiki , Hidenori Miyagawa , Tomohito Kawashima
IPC分类号： H01L47/00 , H01L29/82 , H01L43/00 , H01L21/20 , G11C11/00 , H01L45/00 , H01L27/24
CPC分类号： H01L45/085 , H01L27/2481 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/16 , H01L45/1608 , H01L45/1675
摘要： According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

4. 发明授权

US09530823B2 Memory device and method for manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US09530823B2
公开(公告)日：2016-12-27
申请号：US14168089
申请日：2014-01-30
申请人： Kabushiki Kaisha Toshiba
发明人： Yusuke Arayashiki , Kensuke Takahashi
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1675
摘要： A memory device according to an embodiment includes an ion metal layer containing a first metal, an opposing electrode, a resistance change layer disposed between the ion metal layer and the opposing electrode, a first layer disposed in a central portion of a space between the ion metal layer and the resistance change layer, and a second layer disposed in an end portion of the space. The first layer contains a second metal. The second layer contains the second metal, and at least one selected from oxygen and nitrogen.
摘要翻译：根据实施例的存储器件包括：离子金属层，其包含第一金属，相对电极，设置在离子金属层和相对电极之间的电阻变化层，设置在离子之间的空间的中心部分的第一层金属层和电阻变化层，以及设置在该空间的端部的第二层。第一层包含第二层金属。第二层包含第二金属和选自氧和氮的至少一种。

5. 发明授权

US09379163B1 Variable resistance memory device 有权
标题翻译：可变电阻存储器件
公开(公告)号：US09379163B1
公开(公告)日：2016-06-28
申请号：US14847421
申请日：2015-09-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yusuke Arayashiki
IPC分类号： H01L29/02 , H01L27/24 , H01L45/00
CPC分类号： H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148
摘要： A resistance variable memory includes a plurality of first wires, a plurality of second wires, a controller, a memory cell array, a second current rectifying element and a second variable resistance element, an access controller, a first contact plug, and a second contact plug. The access controller switches the second variable resistance element to a low resistance state or a high resistance state in accordance with a voltage applied to the memory cell connected in series. The first contact plug is connected to the even-numbered first wire in the second direction from the substrate via the corresponding access controller. The second contact plug is connected to the odd-numbered first wire in the second direction from the substrate via the corresponding access controller.
摘要翻译：电阻可变存储器包括多个第一导线，多个第二导线，控制器，存储单元阵列，第二电流整流元件和第二可变电阻元件，访问控制器，第一接触插头和第二触点插头。存取控制器根据施加到串联连接的存储单元的电压将第二可变电阻元件切换到低电阻状态或高电阻状态。第一接触插头经由相应的接入控制器从基板沿第二方向连接到偶数第一导线。第二接触插头经由相应的接入控制器从基板沿第二方向连接到奇数编号的第一导线。

6. 发明授权

US09257640B2 Memory device and method for manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US09257640B2
公开(公告)日：2016-02-09
申请号：US14168352
申请日：2014-01-30
申请人： Kabushiki Kaisha Toshiba
发明人： Yusuke Arayashiki , Kensuke Takahashi
IPC分类号： H01L45/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/085 , H01L27/2481 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/16 , H01L45/1675
摘要： A memory device according to an embodiment includes an ion metal layer, an opposing electrode, and a resistance change layer. The ion metal layer contains a first metal and a second metal. The resistance change layer is disposed between the ion metal layer and the opposing electrode. The first metal is able to move repeatedly through an interior of the resistance change layer. The concentration of the first metal in a central portion of the ion metal layer is higher than the concentration of the first metal in an end portion of the ion metal layer.
摘要翻译：根据实施例的存储器件包括离子金属层，相对电极和电阻变化层。离子金属层包含第一金属和第二金属。电阻变化层设置在离子金属层与对置电极之间。第一金属能够反复移动通过电阻变化层的内部。离子金属层的中心部分中的第一金属的浓度高于离子金属层的端部中的第一金属的浓度。

7. 发明授权

US08895948B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US08895948B2
公开(公告)日：2014-11-25
申请号：US13776458
申请日：2013-02-25
申请人： Kabushiki Kaisha Toshiba
发明人： Yusuke Arayashiki
IPC分类号： H01L29/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/165 , H01L45/1658
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode and a resistance change film. The resistance change film is connected between the first electrode and the second electrode. An ion metal is introduced in a matrix material in the resistance change film. A concentration of the ion metal in a first region on the first electrode side of the resistance change film is higher than a concentration of the ion metal in a second region on the second electrode side of the resistance change film A layer made of only the ion metal is not provided in the memory device.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和电阻变化膜。电阻变化膜连接在第一电极和第二电极之间。在电阻变化膜中的基质材料中引入离子金属。电阻变化膜的第一电极侧的第一区域中的离子金属的浓度高于仅由离子构成的电阻变化膜A层的第二电极侧的第二区域中的离子金属的浓度在存储装置中不设置金属。

8. 发明授权

US09202846B2 Resistance random access memory device 有权
标题翻译：电阻随机存取存储器件
公开(公告)号：US09202846B2
公开(公告)日：2015-12-01
申请号：US13954169
申请日：2013-07-30
申请人： Kabushiki Kaisha Toshiba
发明人： Yusuke Arayashiki , Kikuko Sugimae
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2472 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148
摘要： A resistance random access memory device according to one embodiment includes an interlayer insulation film which a trench is made therein, an ion supply layer provided along a bottom surface and a side surface of the trench, a portion of the ion supply layer provided along the bottom surface is thicker than a portion of the ion supply layer provided along the side surface, and a resistance change layer provided at least below the ion supply layer.
摘要翻译：根据一个实施例的电阻随机存取存储器件包括其中形成沟槽的层间绝缘膜，沿着底表面设置的离子供应层和沟槽的侧表面，沿底部设置的部分离子供应层表面比沿着侧面设置的离子供给层的一部分厚，以及设置在离子供给层的至少下方的电阻变化层。

9. 发明申请

US20140008603A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20140008603A1
公开(公告)日：2014-01-09
申请号：US13770463
申请日：2013-02-19
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kensuke TAKAHASHI , Masanobu Baba , Yusuke Arayashiki
IPC分类号： H01L45/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148 , H01L45/1675
摘要： A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.
摘要翻译：非易失性存储器件具有包括电阻变化层，第一电极和第二电极的存储单元。由于金属离子响应于施加在电极之间的电压而从第一电极传递，电阻变化层在高电阻状态和低电阻状态之间切换。第一电极形成在电阻变化层的第一侧上，并提供金属离子。第二电极形成在电阻变化层的第二侧上。在具有电阻变化层的第一电极和第二电极之间形成存储单元区域。存储器件还包括具有比电阻变化层更高的介电常数的高介电常数层。

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