专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08822966B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08822966B2
公开(公告)日：2014-09-02
申请号：US13770463
申请日：2013-02-19
申请人： Kabushiki Kaisha Toshiba
发明人： Kensuke Takahashi , Masanobu Baba , Yusuke Arayashiki
IPC分类号： H01L29/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148 , H01L45/1675
摘要： A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.
摘要翻译：非易失性存储器件具有包括电阻变化层，第一电极和第二电极的存储单元。由于金属离子响应于施加在电极之间的电压而从第一电极的转移，电阻变化层在高电阻状态和低电阻状态之间切换。第一电极形成在电阻变化层的第一侧上，并提供金属离子。第二电极形成在电阻变化层的第二侧上。在具有电阻变化层的第一电极和第二电极之间形成存储单元区域。存储器件还包括具有比电阻变化层更高的介电常数的高介电常数层。

2. 发明申请

US20170213840A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
公开(公告)号：US20170213840A1
公开(公告)日：2017-07-27
申请号：US15258774
申请日：2016-09-07
申请人： Kabushiki Kaisha Toshiba
发明人： Gaku Sudo , Masanobu Baba , Megumi Ishiduki , Tadashi Iguchi , Murato Kawai
IPC分类号： H01L27/115 , H01L21/28
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/11565 , H01L27/1157 , H01L27/11575 , H01L27/11582
摘要： According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a stacked body alternately stacked with a plurality of members and a plurality of intermediate bodies having materials different from materials of the plurality of members, processing an end portion of at least two layers of the plurality of members sequentially in a stacking direction of the stacked body, and forming a step-wise step stacked with the plurality of members and the plurality of intermediate bodies, forming a plurality of side wall films contacting the step and making the end portion of the plurality of members in a step-wise. The making the end portion of the plurality of members in a step-wise includes retreating a portion of the plurality of members, the portion separated from the plurality of side wall films and exposed from the stacked body.

3. 发明授权

US08742391B2 Non-volatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08742391B2
公开(公告)日：2014-06-03
申请号：US13788596
申请日：2013-03-07
申请人： Kabushiki Kaisha Toshiba
发明人： Ichiro Mizushima , Hirotaka Ogihara , Kensuke Takahashi , Masanobu Baba
IPC分类号： H01L47/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/148 , H01L45/1616 , H01L45/1675
摘要： A non-volatile semiconductor memory includes a word line extending in a first direction, a first electrode connected to the word line electrically, an ion diffusion layer with connected to the first electrode electrically, a second electrode connected to the ion diffusion layer electrically and formed of a metal to be diffused into the ion diffusion layer when a positive voltage is supplied thereto, and a bit line extending in a second direction perpendicular to the first direction, the bit line connected to the second electrode electrically. The ion diffusion layer has a first region disposed on the first electrode and a second region disposed between the first region and the second electrode, and the metal is more difficult to diffuse into the second region than into the first region.
摘要翻译：非易失性半导体存储器包括：沿第一方向延伸的字线，电连接到字线的第一电极，电连接到第一电极的离子扩散层，电连接到离子扩散层的第二电极当向其提供正电压时扩散到离子扩散层中的金属以及沿垂直于第一方向的第二方向延伸的位线，该位线与第二电极电连接。离子扩散层具有设置在第一电极上的第一区域和设置在第一区域和第二电极之间的第二区域，并且金属比第一区域更难扩散到第二区域。

4. 发明申请

US20140008603A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20140008603A1
公开(公告)日：2014-01-09
申请号：US13770463
申请日：2013-02-19
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kensuke TAKAHASHI , Masanobu Baba , Yusuke Arayashiki
IPC分类号： H01L45/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148 , H01L45/1675
摘要： A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.
摘要翻译：非易失性存储器件具有包括电阻变化层，第一电极和第二电极的存储单元。由于金属离子响应于施加在电极之间的电压而从第一电极传递，电阻变化层在高电阻状态和低电阻状态之间切换。第一电极形成在电阻变化层的第一侧上，并提供金属离子。第二电极形成在电阻变化层的第二侧上。在具有电阻变化层的第一电极和第二电极之间形成存储单元区域。存储器件还包括具有比电阻变化层更高的介电常数的高介电常数层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式