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1. 发明授权

US07338555B2 Highly crystalline aluminum nitride multi-layered substrate and production process thereof 失效
标题翻译：高结晶氮化铝多层基板及其制造方法
公开(公告)号：US07338555B2
公开(公告)日：2008-03-04
申请号：US10937344
申请日：2004-09-10
申请人： Hiroyuki Fukuyama , Wataru Nakao , Shinya Kusunoki , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Wataru Nakao , Shinya Kusunoki , Kazuya Takada , Akira Hakomori
IPC分类号： C30B25/00
CPC分类号： C23C8/28 , C23C8/24 , C30B29/20 , C30B29/38 , C30B33/00
摘要： A highly crystalline aluminum nitride multi-layered substrate comprising a single-crystal α-alumina substrate, an aluminum oxynitride layer and a highly crystalline aluminum nitride film as the outermost layer which are formed in the mentioned order, wherein the aluminum oxynitride layer has a threading dislocation density of 6.3×107/cm2 or less and a crystal orientation expressed by the half-value width of its rocking curve of 4,320 arcsec or less; and a production process thereof.
摘要翻译：包含按照上述顺序形成的单晶α-氧化铝基板，氮氧化铝层和高结晶氮化铝膜作为最外层的高结晶氮化铝多层基板，其中，氮氧化铝层具有螺纹位错密度为6.3×10 7 / cm 2以下，由其摇摆曲线的半值宽度表示的晶体取向为4,320arcsec以下; 及其制造方法。

2. 发明申请

US20050059257A1 Highly crystalline aluminum nitride multi-layered substrate and production process thereof 失效
标题翻译：高结晶氮化铝多层基板及其制造方法
公开(公告)号：US20050059257A1
公开(公告)日：2005-03-17
申请号：US10937344
申请日：2004-09-10
申请人： Hiroyuki Fukuyama , Wataru Nakao , Shinya Kusunoki , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Wataru Nakao , Shinya Kusunoki , Kazuya Takada , Akira Hakomori
IPC分类号： C23C8/24 , C23C8/28 , C23C28/04 , C30B29/20 , C30B29/38 , C30B33/00 , H01L21/00 , H01L21/302 , H01L21/461 , H01L21/84
CPC分类号： C23C8/28 , C23C8/24 , C30B29/20 , C30B29/38 , C30B33/00
摘要： A highly crystalline aluminum nitride multi-layered substrate comprising a single-crystal α-alumina substrate, an aluminum oxynitride layer and a highly crystalline aluminum nitride film as the outermost layer which are formed in the mentioned order, wherein the aluminum oxynitride layer has a threading dislocation density of 6.3×107/cm2 or less and a crystal orientation expressed by the half-value width of its rocking curve of 4,320 arcsec or less; and a production process thereof.
摘要翻译：包含按照上述顺序形成的单晶α-氧化铝基板，氮氧化铝层和高结晶氮化铝膜作为最外层的高结晶氮化铝多层基板，其中，氮氧化铝层具有螺纹位错密度为6.3×10 7 / cm 2以下，由其摇摆曲线的半值宽度表示的晶体取向为4,320arcsec以下; 及其制造方法。

3. 发明授权

US07528462B2 Aluminum nitride single-crystal multi-layered substrate 失效
标题翻译：氮化铝单晶多层基板
公开(公告)号：US07528462B2
公开(公告)日：2009-05-05
申请号：US11347236
申请日：2006-02-06
申请人： Hiroyuki Fukuyama , Shinya Kusunoki , Katsuhito Nakamura , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Shinya Kusunoki , Katsuhito Nakamura , Kazuya Takada , Akira Hakomori
IPC分类号： H01L31/032 , H01L31/0368
CPC分类号： C30B25/183 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： An aluminum nitride single-crystal multi-layered substrate comprising an aluminum nitride single-crystal layer formed by direct reduction nitridation on a single-crystal α-alumina substrate such as a sapphire substrate and an edge-type dislocation layer having a thickness of 10 nm or less in the vicinity of the interface between the both crystals. Threading dislocation is rarely existent in the aluminum nitride single-crystal layer existent on the surface. It is useful as a semiconductor device substrate.
摘要翻译：一种氮化铝单晶多层基板，其包括通过直接还原氮化在单晶α-氧化铝基板如蓝宝石基板和厚度为10nm的边缘型位错层上形成的氮化铝单晶层或更小的两个晶体之间的界面附近。在表面存在的氮化铝单晶层中很少存在穿透位错。作为半导体器件基板是有用的。

4. 发明申请

US20060175619A1 Aluminum nitride single-crystal multi-layered substrate 失效
公开(公告)号：US20060175619A1
公开(公告)日：2006-08-10
申请号：US11347236
申请日：2006-02-06
申请人： Hiroyuki Fukuyama , Shinya Kusunoki , Katsuhito Nakamura , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Shinya Kusunoki , Katsuhito Nakamura , Kazuya Takada , Akira Hakomori
IPC分类号： H01L33/00
CPC分类号： C30B25/183 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： An aluminum nitride single-crystal multi-layered substrate comprising an aluminum nitride single-crystal layer formed by direct reduction nitridation on a single-crystal α-alumina substrate such as a sapphire substrate and an edge-type dislocation layer having a thickness of 10 nm or less in the vicinity of the interface between the both crystals. Threading dislocation is rarely existent in the aluminum nitride single-crystal layer existent on the surface. It is useful as a semiconductor device substrate.

5. 发明申请

US20100215987A1 Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof 失效
标题翻译：氮化铝单晶膜，氮化铝单晶多层基板及其制造方法
公开(公告)号：US20100215987A1
公开(公告)日：2010-08-26
申请号：US11989841
申请日：2006-08-01
申请人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
IPC分类号： B32B9/04 , C30B25/10 , C01B21/072
CPC分类号： C30B29/403 , C30B1/10 , C30B25/02
摘要： In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.
摘要翻译：在通过在碳，氮和一氧化碳的存在下加热蓝宝石衬底而在衬底上制造氮化铝单晶膜的方法，与原料蓝宝石衬底和形成的氮化铝单晶不同的铝化合物在反应体系中存在控制加热气氛中的铝的浓度如氮化铝或氧化铝以促进还原氮化反应。提供了在蓝宝石衬底的表面上具有氮化铝单晶膜的氮化铝单晶多层衬底，其中所述氮化铝单晶具有改善的结晶度和低密度缺陷。

6. 发明授权

US08137825B2 Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof 失效
标题翻译：氮化铝单晶膜，氮化铝单晶多层基板及其制造方法
公开(公告)号：US08137825B2
公开(公告)日：2012-03-20
申请号：US11989841
申请日：2006-08-01
申请人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
IPC分类号： B32B9/00
CPC分类号： C30B29/403 , C30B1/10 , C30B25/02
摘要： In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.
摘要翻译：在通过在碳，氮和一氧化碳的存在下加热蓝宝石衬底而在衬底上制造氮化铝单晶膜的方法，与原料蓝宝石衬底和形成的氮化铝单晶不同的铝化合物在反应体系中存在控制加热气氛中的铝的浓度如氮化铝或氧化铝以促进还原氮化反应。提供了在蓝宝石衬底的表面上具有氮化铝单晶膜的氮化铝单晶多层衬底，其中所述氮化铝单晶具有改善的结晶度和低密度缺陷。

7. 发明授权

US07220314B2 Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device 失效
标题翻译：单晶氮化铝膜，其形成方法，III族元素氮化物膜的基底，发光器件和表面声波器件
公开(公告)号：US07220314B2
公开(公告)日：2007-05-22
申请号：US10809398
申请日：2004-03-26
申请人： Hiroyuki Fukuyama , Kazuhiro Nagata , Wataru Nakao
发明人： Hiroyuki Fukuyama , Kazuhiro Nagata , Wataru Nakao
IPC分类号： C30B25/00
CPC分类号： H01L33/32 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L21/02658
摘要： A single crystalline aluminum nitride laminated substrate comprising a single crystalline α-Al2O3 substrate such as a sapphire substrate, an aluminum oxynitride layer formed on the substrate and a single crystalline aluminum nitride film as the outermost layer, wherein the dislocation density in the single crystalline aluminum nitride is 108/cm2 or less.The above single crystalline aluminum nitride laminated substrate is formed by nitriding the substrate by heating in the presence of carbon, nitrogen and carbon monoxide.The above single crystalline aluminum nitride film has a law dislocation density, little lattice mismatching and excellent crystallinity. A Group III element nitride film having excellent luminous efficiency can be formed on this aluminum nitride film. The above laminated substrate is used in a base substrate for a Group III element nitride film, a light emitting device and a surface acoustic wave device.
摘要翻译：包括单晶α-Al 2 O 3 N 3衬底的单晶氮化铝层压衬底，例如蓝宝石衬底，形成在衬底上的氧氮化铝层和单晶氮化铝膜作为最外层，其中单晶氮化铝中的位错密度为10 8 / cm 2以下。上述单晶氮化铝层压基板是通过在碳，氮和一氧化碳的存在下加热氮化基板而形成的。上述单晶氮化铝膜具有定位密度，晶格不匹配和结晶度极好的特点。可以在该氮化铝膜上形成具有优异发光效率的III族元素氮化物膜。上述层叠基板用于III族元素氮化物膜的基底基板，发光元件和弹性表面波元件。

8. 发明授权

US06744076B2 Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device 失效
标题翻译：单晶氮化铝膜，其形成方法，III族元素氮化物膜的基底，发光器件和表面声波器件
公开(公告)号：US06744076B2
公开(公告)日：2004-06-01
申请号：US10247539
申请日：2002-09-20
申请人： Hiroyuki Fukuyama , Kazuhiro Nagata , Wataru Nakao
发明人： Hiroyuki Fukuyama , Kazuhiro Nagata , Wataru Nakao
IPC分类号： H01L2106
CPC分类号： H01L33/32 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L21/02658
摘要： A single crystalline aluminum nitride laminated substrate comprising a single crystalline &agr;-Al2O3 substrate such as a sapphire substrate, an aluminum oxynitride layer formed on the substrate and a single crystalline aluminum nitride film as the outermost layer, wherein the dislocation density in the single crystalline aluminum nitride is 108/cm2 or less. The above single crystalline aluminum nitride laminated substrate is formed by nitriding the substrate by heating in the presence of carbon, nitrogen and carbon monoxide. The above single crystalline aluminum nitride film has a law dislocation density, little lattice mismatching and excellent crystallinity. A Group III element nitride film having excellent luminous efficiency can be formed on this aluminum nitride film. The above laminated substrate is used in a base substrate for a Group III element nitride film, a light emitting device and a surface acoustic wave device.
摘要翻译：包括单晶Al-Al 2 O 3衬底（例如蓝宝石衬底），形成在衬底上的氧氮化铝层和单晶氮化铝膜作为最外层的单晶氮化铝层压衬底，其中单晶铝中的位错密度氮化物为10 8 / cm 2以下。上述单晶氮化铝层叠基板通过在碳，氮和一氧化碳的存在下加热氮化基板而形成。上述单晶氮化铝膜具有法位错密度小，晶格不匹配，结晶性好。可以在该氮化铝膜上形成具有优异发光效率的III族元素氮化物膜。上述层叠基板用于III族元素氮化物膜的基底基板，发光元件和弹性表面波元件。

9. 发明申请

US20120240845A1 PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL 审中-公开
标题翻译：硝酸铝单晶的生产方法
公开(公告)号：US20120240845A1
公开(公告)日：2012-09-27
申请号：US13512627
申请日：2010-11-29
申请人： Hiroyuki Fukuyama , Masanobu Azuma , Kazuya Takada , Takeshi Hattori
发明人： Hiroyuki Fukuyama , Masanobu Azuma , Kazuya Takada , Takeshi Hattori
IPC分类号： C30B25/14 , C30B25/16
CPC分类号： C30B29/403 , C30B23/00 , C30B23/007 , C30B25/00 , C30B29/62
摘要： Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that, at least a part of the carbon body does not directly contact with the raw material gas generation source, at least a part of the raw material gas generation source does not directly contact with the carbon body, the raw material gas generation source and the carbon body are positioned to make a space in which a clearance between the raw material gas generation source, which does not contact with the carbon body, and the carbon body, which does not contact with the raw material gas generation source, is 0.01 to 50 mm, and a heat temperature and a nitrogen gas flow rate are set so as to satisfy a condition for aluminum nitride deposition in a space between the raw material gas generation source, which does not contact with carbon body, and the carbon body, which does not contact with raw material gas generation source.
摘要翻译：公开了一种新颖的方法，其中具有良好结晶度的氮化铝单晶被有效且容易地制造。在生成铝气体或氧化铝气体的原料气体发生源的存在下生成氮气的氮化铝单晶的制造方法和碳体，然后生长氮化铝单晶在加热条件下其特征在于，所述碳体的至少一部分不与所述原料气体发生源直接接触，所述原料气体发生源的至少一部分不与碳体直接接触，所述原料气体产生源并且碳体被定位成使与未与碳体接触的原料气体发生源与不与原料气体发生源接触的碳体之间的间隙为0.01的空间至50mm，并且设定加热温度和氮气流量以满足与碳体不接触的原料气体发生源与碳体之间的空间中的氮化铝沉积的条件，其不与原料气体发生源接触。

10. 发明授权

US09143110B2 Automatic gain control circuit 有权
标题翻译：自动增益控制电路
公开(公告)号：US09143110B2
公开(公告)日：2015-09-22
申请号：US14114519
申请日：2012-06-29
申请人： Kimikazu Sano , Hiroyuki Fukuyama , Makoto Nakamura , Hideyuki Nosaka , Miwa Mutoh , Koichi Murata
发明人： Kimikazu Sano , Hiroyuki Fukuyama , Makoto Nakamura , Hideyuki Nosaka , Miwa Mutoh , Koichi Murata
IPC分类号： H03G3/10 , H03F1/08 , H03G3/30
CPC分类号： H03G3/30 , H03G3/3084
摘要： An automatic gain control circuit (5a) includes a peak detector circuit (10) that detects the peak voltage of the output signal from a variable gain amplifier (3), an average value detection and output amplitude setting circuit (11) that detects the average voltage of the output signals from the variable gain amplifier (3) and adds a voltage ½ the desired output amplitude of the variable gain amplifier (3) to the average voltage, and a high gain amplifier (12) that amplifies the difference between the output voltage of the peak detector circuit (10) and the output voltage of the average value detection and output amplitude setting circuit (11) and controls the gain of the variable gain amplifier (3) using the amplification result as a gain control signal. The peak detector circuit (10) includes transistors (Q1, Q2, Q3), a current source (I1), and a filter circuit. The filter circuit includes a series connection of a resistor (Ra) and a capacitor (C1).
摘要翻译：自动增益控制电路（5a）包括检测来自可变增益放大器（3）的输出信号的峰值电压的峰值检测电路（10），检测平均值的平均值检测和输出幅度设定电路（11）来自可变增益放大器（3）的输出信号的电压，并将可变增益放大器（3）的期望输出幅度的电压½加到平均电压上;以及高增益放大器（12），放大输出峰值检测器电路（10）的电压和平均值检测和输出幅度设置电路（11）的输出电压，并且使用放大结果来控制可变增益放大器（3）的增益作为增益控制信号。峰值检测器电路（10）包括晶体管（Q1，Q2，Q3），电流源（I1）和滤波器电路。滤波电路包括电阻（Ra）和电容器（C1）的串联连接。

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