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1. 发明授权

US5420879A Solid state laser 失效
标题翻译：固体激光
公开(公告)号：US5420879A
公开(公告)日：1995-05-30
申请号：US120757
申请日：1993-09-15
申请人： Hiroshi Kawarada , Takahiro Imai , Yoshiki Nishibayashi , Naoji Fujimori
发明人： Hiroshi Kawarada , Takahiro Imai , Yoshiki Nishibayashi , Naoji Fujimori
IPC分类号： H01S3/02 , H01S3/0959 , H01S3/16 , H01S5/30
CPC分类号： H01S3/0959 , H01S3/16 , H01S5/30
摘要： A solid state laser includes a diamond crystal as a medium of laser beam emission, which generates a laser beam having a wavelength of 225 to 300 nm through exciton light emission.
摘要翻译：固体激光器包括作为激光束发射介质的金刚石晶体，其通过激子发光产生具有225至300nm的波长的激光束。

2. 发明授权

US07976893B2 Superconductivity in boron-doped diamond thin film 失效
标题翻译：硼掺杂金刚石薄膜的超导性
公开(公告)号：US07976893B2
公开(公告)日：2011-07-12
申请号：US11133269
申请日：2005-05-20
申请人： Yoshihiko Takano , Masanori Nagao , Minoru Tachiki , Hiroshi Kawarada , Hitoshi Umezawa , Kensaku Kobayashi
发明人： Yoshihiko Takano , Masanori Nagao , Minoru Tachiki , Hiroshi Kawarada , Hitoshi Umezawa , Kensaku Kobayashi
IPC分类号： B05D5/12 , C23C16/00 , C23C8/00 , H05H1/30 , H05H1/24 , B01J3/06 , D01C5/00 , D01F9/12
CPC分类号： C23C16/278 , C23C16/274 , H01L39/12 , H01L39/24 , H01L2224/45144 , H01L2924/00014 , H01L2924/00 , H01L2224/48
摘要： A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.
摘要翻译：具有超导性的重硼掺杂金刚石薄膜通过化学气相沉积沉积，其中至少使用包含氢的碳化合物和硼化合物的气体混合物。通过化学气相沉积沉积的金刚石薄膜的优点是它可以含有高浓度的硼，特别是在（111）取向膜中。通过化学气相沉积沉积的掺杂硼的金刚石薄膜显示了典型的II型超导体的特性。

3. 发明申请

US20140031253A1 Protein Detection Using Three-Dimensional Carbon Microarrays 审中-公开
标题翻译：使用三维碳微阵列的蛋白质检测
公开(公告)号：US20140031253A1
公开(公告)日：2014-01-30
申请号：US13946810
申请日：2013-07-19
申请人： Varun Penmatsa , Chunlei Wang , Hiroshi Kawarada
发明人： Varun Penmatsa , Chunlei Wang , Hiroshi Kawarada
IPC分类号： G01N33/551 , G01N33/74
CPC分类号： G01N33/551 , G01N33/582 , G01N33/74 , G01N2333/49
摘要： The potential of aptamers as ligand binding molecule have opened new avenues in the development of biosensors for proteins, such as cancer oncoproteins. Disclosed herein is a label-free detection strategy using signaling aptamer/protein binding complex for proteins, such as platelet-derived growth factor (PDGF-BB) oncoprotein. The detection mechanism is based on the release of a fluorophore (e.g., TOTO intercalating dye) from the target binding aptamer's stem structure when it captures the protein, e.g., PDGF. Amino-terminated three-dimensional carbon microarrays fabricated by pyrolyzing patterned photoresist are used as a detection platform. The sensor showed near linear relationship between the relative fluorescence difference and protein concentration even in the sub-nanomolar range with an excellent detection limit of 5 pmol. This detection strategy is promising in a wide range of applications in the detection of cancer biomarkers and other proteins.
摘要翻译：适体作为配体结合分子的潜力为开发蛋白质生物传感器（如癌症癌蛋白）开辟了新的途径。本文公开了使用信号转导蛋白/蛋白质结合复合物（例如血小板衍生生长因子（PDGF-BB）癌蛋白）的无标记检测策略。检测机制基于当其捕获蛋白质例如PDGF时从靶结合适体的茎结构释放荧光团（例如，TOTO嵌入染料）。使用通过热解图案化光致抗蚀剂制造的氨基封端的三维碳微阵列用作检测平台。传感器即使在亚纳摩尔范围内也显示相对荧光差异和蛋白质浓度之间的近似线性关系，检出限为5 pmol。该检测策略在肿瘤生物标志物和其他蛋白质的检测中的应用范围广泛。

4. 发明申请

US20080032294A1 Dna Sensor and Measuring Method Using the Same 有权
标题翻译： Dna传感器和使用它的测量方法
公开(公告)号：US20080032294A1
公开(公告)日：2008-02-07
申请号：US11661033
申请日：2005-08-04
申请人： Hiroshi Kawarada
发明人： Hiroshi Kawarada
IPC分类号： C12Q1/68 , C12M1/00
CPC分类号： C12Q1/6837 , G01N27/4145 , C12Q2565/607
摘要： A DNA sensor is provided which is capable of identifying unknown DNA with enhanced detection sensitivity of the hybridization. A p-channel field-effect transistor having an electrolyte solution gate 8 and having as a p-channel 5 a diamond surface 2 which contains a mixture of at least a hydrogen-terminated surface and a surface terminated with an amino group or a molecule with an amino group is configured along with a probe DNA 11 constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the diamond surface 2 and with a target DNA constituted of an unknown single-stranded DNA which is dropped on the diamond surface 2. When the target DNA is in complementary relationship to the probe DNA 11, negative electric charge of the phosphate group of a double-stranded DNA produced by the hybridization of the probe DNA 11 with the target DNA both constituted of a single-stranded DNA is doubled, thereby resulting in increase of the hole density in the p-channel and shift of the threshold voltage of the p-channel field effect transistor toward positive direction. By detecting this shift of the threshold voltage toward positive direction, an identification can be made on whether or not the target DNA is in complementary relationship to the probe DNA 11.
摘要翻译：提供DNA传感器，其能够鉴定具有增强的杂交检测灵敏度的未知DNA。具有电解液栅极8并且具有作为p沟道5的金刚石表面2的p沟道场效应晶体管，金刚石表面2包含至少氢封端的表面和用氨基或分子封端的表面的混合物，将氨基与由具有已知核苷酸序列的单链DNA构成的探针DNA一起构建，所述核酸序列通过接头直接固定在金刚石表面2上，并与由未知的单链DNA构成的靶DNA被滴落当靶DNA与探针DNA11互补关系时，通过探针DNA 11与目标DNA的杂交产生的双链DNA的磷酸基团的负电荷都由单链DNA加倍，从而导致p沟道中的空穴密度增加，并且p沟道场效应晶体管的阈值电压向正方向移动。通过检测阈值电压向正方向的偏移，可以确定目标DNA是否与探针DNA11具有互补关系。

5. 发明授权

US5854496A Hydrogen-terminated diamond misfet and its manufacturing method 失效
标题翻译：氢终止金刚石错误及其制造方法
公开(公告)号：US5854496A
公开(公告)日：1998-12-29
申请号：US919792
申请日：1997-08-29
申请人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
发明人： Takefumi Ishikura , Satoshi Yamashita , Hiroshi Kawarada , Akira Hokazono
IPC分类号： H01L21/04 , H01L21/336 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/1033 , H01L29/66045 , H01L29/78
摘要： On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.
摘要翻译：在通过端接同质外延金刚石或异质外延金刚石或表面平坦多晶金刚石的表面2形成的氢终止金刚石1的表面上形成漏极 - 欧姆接触4和金 - 欧姆接触3，铂，由氧化硅（SiO x：1

6. 发明授权

US08828349B2 Substrate for growing carbon nanotubes, manufacturing method thereof, and manufacturing method of oriented carbon nanotubes 有权
标题翻译：用于生长碳纳米管的基板，其制造方法和取向碳纳米管的制造方法
公开(公告)号：US08828349B2
公开(公告)日：2014-09-09
申请号：US13413776
申请日：2012-03-07
申请人： Toshiyuki Ohashi , Toshio Tokune , Masahiro Ota , Hidefumi Nikawa , Hiroshi Kawarada , Takumi Ochiai
发明人： Toshiyuki Ohashi , Toshio Tokune , Masahiro Ota , Hidefumi Nikawa , Hiroshi Kawarada , Takumi Ochiai
IPC分类号： D01F9/12 , H05H1/02 , B82Y40/00 , B82Y30/00 , D01F9/127 , D01F9/133 , C01B31/02
CPC分类号： B82Y30/00 , B82Y40/00 , C01B31/0233 , C01B32/162 , C01B2202/08 , C01P2002/82 , D01F9/127 , D01F9/133 , Y10S977/742 , Y10S977/843
摘要： A substrate for growing carbon nanotubes capable of elongating single-walled carbon nanotubes of an average diameter of less than 2 nm is provided. The substrate for growing carbon nanotubes 1 is equipped with a reaction prevention layer 3 formed on a base material 2, a catalyst material layer 4 formed on the reaction prevention layer 3, a dispersion layer 5 formed on the catalyst material layer 4, and a dispersion promotion layer 6 formed on the dispersion layer 5.
摘要翻译：提供了用于生长能够延长平均直径小于2nm的单壁碳纳米管的碳纳米管的基板。用于生长碳纳米管1的基板配备有形成在基材2上的反应防止层3，形成在反应防止层3上的催化剂材料层4，形成在催化剂材料层4上的分散层5和分散体促进层6形成在分散层5上。

7. 发明授权

US07851205B2 DNA sensor 有权
标题翻译： DNA传感器
公开(公告)号：US07851205B2
公开(公告)日：2010-12-14
申请号：US11661033
申请日：2005-08-04
申请人： Hiroshi Kawarada
发明人： Hiroshi Kawarada
IPC分类号： C12M1/34 , C12M3/00 , C12Q1/68 , H01L27/148 , G01N27/403 , C07H21/04
CPC分类号： C12Q1/6837 , G01N27/4145 , C12Q2565/607
摘要： A DNA sensor including a p-channel field-effect transistor having as a gate an electrolyte solution and having as a channel a diamond surface which contains a mixture of at least a hydrogen-terminated surface and a surface terminated by an amino group or a molecule with an amino group as an amino termination; a probe DNA constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the amino termination of the diamond surface; and a target DNA constituted of an unknown single-stranded DNA which is dropped on said diamond surface, wherein the hybridization of the target and probe is ascertained by detecting a shift of the threshold voltage of said p-channel field effect transistor toward positive direction which is due to increase in hole density of the p-channel resulting from doubling the negative electric charge of the phosphate groups upon hybridization.
摘要翻译：一种DNA传感器，包括具有作为电解液的栅极的p沟道场效应晶体管，并且具有作为沟道的金刚石表面，所述金刚石表面含有至少氢封端的表面和由氨基或分子封端的表面的混合物具有氨基作为氨基末端; 由具有已知核苷酸序列的单链DNA构建的探针DNA，其通过接头直接固定在金刚石表面的氨基末端; 以及由所述金刚石表面上的未知单链DNA构成的靶DNA，其中通过检测所述p沟道场效应晶体管的阈值电压向正方向的偏移来确定靶和探针的杂交，是由于在杂交时使磷酸基团的负电荷加倍导致的p通道的空穴密度增加。

8. 发明授权

US06833059B2 Field-effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US06833059B2
公开(公告)日：2004-12-21
申请号：US09959905
申请日：2001-11-13
申请人： Hiroshi Kawarada
发明人： Hiroshi Kawarada
IPC分类号： G01N27327
CPC分类号： G01N27/414 , H01L2224/48091 , H01L2224/8592 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： An object is to provide a field effect transistor which uses a liquid electrolyte as a gate and which operates stably in the liquid electrolyte. A field effect transistor includes a channel (2) formed of a portion of a hydrogen-terminated surface of a diamond, the portion being exposed to the outside between a gate electrode (3) and a drain electrode (6); and a gate formed of a liquid electrolyte (4) in contact with the exposed portion of the hydrogen-terminated surface of the diamond.
摘要翻译：目的是提供一种使用液体电解质作为栅极并在液体电解质中稳定地工作的场效应晶体管。场效应晶体管包括由金刚石的氢终止表面的一部分形成的沟道（2）所述部分在栅电极（3）和漏电极（6）之间暴露于外部; 以及由与金刚石的氢终止表面的暴露部分接触的液体电解质（4）形成的门。

9. 发明授权

US5792556A Diamond crystal 失效
标题翻译：钻石水晶
公开(公告)号：US5792556A
公开(公告)日：1998-08-11
申请号：US410218
申请日：1995-03-24
申请人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
发明人： Takefumi Ishikura , Satoshi Yamashita , Shin-ichi Ojika , Hiroshi Kawarada
IPC分类号： C30B25/02 , C30B29/04
CPC分类号： C30B25/02 , C30B29/04 , Y10S977/879 , Y10T428/30 , Y10T428/31678
摘要： There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24 or less an area of the crystal on the substrate.
摘要翻译：提供了一种金刚石晶体，其中（111）取向平面是通过与基板表面平行的化学气相沉积方法在基板上合成的金刚石晶体，并且（111）取向平面于基板表面的面积是+ E，fra 1/24 + EE或更小的衬底上晶体的面积。

10. 发明授权

US5219769A Method for forming Schottky diode 失效
标题翻译：形成肖特基二极管的方法
公开(公告)号：US5219769A
公开(公告)日：1993-06-15
申请号：US617157
申请日：1990-11-23
申请人： Takao Yonehara , Hiroshi Kawarada , Jing S. Ma , Akio Hiraki
发明人： Takao Yonehara , Hiroshi Kawarada , Jing S. Ma , Akio Hiraki
IPC分类号： H01L21/04 , H01L21/20 , H01L29/16 , H01L29/47 , H01L29/872
CPC分类号： H01L29/1602 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02532 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L29/6603 , H01L29/872 , Y10S117/913
摘要： A method for forming a diode provided with electrodes and a semiconductive layer. Such method comprises applying ion beam irradiation to a substrate having a protruding portion at a desired position for monocrystalline diamond formation. In this manner the substrate is and subjected to surface modification thereby effecting a process for diamond crystal growth on the substrate.
摘要翻译：一种形成设置有电极和半导体层的二极管的方法。这样的方法包括将离子束照射施加到具有突出部分的基底上，用于单晶金刚石形成的期望位置。以这种方式，衬底被进行表面改性，从而在衬底上进行金刚石晶体生长的工艺。

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