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1. 发明授权

US08288294B2 Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device 有权
标题翻译：半导体装置用绝缘膜，半导体装置用绝缘膜的制造方法及装置，半导体装置及半导体装置的制造方法
公开(公告)号：US08288294B2
公开(公告)日：2012-10-16
申请号：US13001256
申请日：2009-06-25
申请人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
发明人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
IPC分类号： H01L21/31
CPC分类号： H01L21/318 , C23C16/342 , C23C16/507 , H01L21/02112 , H01L21/02274 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (2); an electromagnetic wave is introduced into the chamber (2) using with an inductive coupling type plasma generation mechanism (4, 5, 6) to convert the gas into a plasma; a substrate (8) is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate (8).
摘要翻译：本发明的目的是提供具有低介电常数，低漏电流和高机械强度特性的半导体器件用绝缘膜，随着时间的推移，这些特性的变化变小，具有优异的耐水性，以及提供用于制造用于半导体器件的绝缘膜，半导体器件和用于制造半导体器件的工艺的工艺和设备。在室（2）内供给含有气化了规定的烷基
硼氮化合物的原料气体的气体。使用电感耦合型等离子体产生机构（4,5,6）将电磁波引入腔室（2），以将气体转换成等离子体; 将衬底（8）放置在等离子体的等离子体扩散区域中; 用作为基本单元的环硼烷骨架分子进行气相聚合，通过等离子体与烷基硼氮化合物离解，从而在基板（8）上形成用于半导体器件的绝缘膜。

2. 发明授权

US07981790B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07981790B2
公开(公告)日：2011-07-19
申请号：US12683949
申请日：2010-01-07
申请人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Kinya Goto , Masazumi Matsuura
发明人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Kinya Goto , Masazumi Matsuura
IPC分类号： H01L21/4763
CPC分类号： H01L21/02271 , H01L21/314 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.
摘要翻译：提供一种半导体器件及其制造方法，其采用环硼氮烷化合物的绝缘膜，以提供绝缘材料和互连材料，增加的机械强度和其它改进的特性之间的增强的接触。半导体器件包括具有埋设有第一导体层的凹部的第一绝缘层，形成在第一绝缘层上的蚀刻阻挡层，形成在蚀刻停止层上的第二绝缘层，形成在第二绝缘层上的第三绝缘层层，以及埋在第二绝缘层和第三绝缘层的凹部中的第二导体层。第二绝缘层和第三绝缘层通过化学气相沉积生长，其中含有碳源的环硼氮烷化合物用作源材料，第三绝缘层的碳含量比第二绝缘层小。

3. 发明申请

US20100181654A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, INSULATING FILM FOR SEMICONDUCTOR DEVICE, AND MANUFACTURING APPARATUS OF THE SAME 审中-公开
标题翻译：半导体器件的制造方法，半导体器件的绝缘膜及其制造装置
公开(公告)号：US20100181654A1
公开(公告)日：2010-07-22
申请号：US12664605
申请日：2009-06-13
申请人： Toshihito Fujiwara , Toshihiko Nishimori , Toshiya Watanabe , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Chiho Mizushima , Takuya Kamiyama , Tetsuya Yamamoto
发明人： Toshihito Fujiwara , Toshihiko Nishimori , Toshiya Watanabe , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Chiho Mizushima , Takuya Kamiyama , Tetsuya Yamamoto
IPC分类号： H01L23/58 , H01L21/471
CPC分类号： H01L21/02118 , C23C16/342 , C23C16/505 , H01L21/02274 , H01L21/02348 , H01L21/02351 , H01L21/312 , H01L21/76801
摘要： An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film. The production process comprises a film forming step of supplying a mixed gas containing a carrier gas and a raw material gas, which is a gasified material having borazine skeletal molecules, into a chamber, causing the mixed gas to be in a plasma state, applying a bias to the substrate placed in the chamber, and carrying out gas-phase polymerization by using the borazine skeletal molecule as a fundamental unit so as to form the insulating film on the substrate; and a reaction promoting step of, after the film forming step, bringing the bias applied to the substrate to a different magnitude from the bias in the film forming step, supplying the mixed gas while gradually reducing only the raw material gas, which is the gasified material having the borazine skeletal molecules, treating the insulating film with a plasma mainly comprising the carrier gas.
摘要翻译：提供具有低介电常数，低泄漏电流和高机械强度特性的半导体器件绝缘膜的目的是经历这些特性的小的时间依赖性变化，并且具有优异的耐水性，并且提供制造以及使用该绝缘膜的半导体器件的制造方法。制造方法包括：将含有载气的混合气体和作为具有环硼氮烷骨架分子的气化材料的原料气体供给到室中的成膜工序，使混合气体处于等离子体状态，偏置于放置在室内的基板上，通过使用环硼氮烷骨架分子作为基本单元进行气相聚合，以在基板上形成绝缘膜; 以及反应促进步骤，在成膜步骤之后，使得施加到基板上的偏压与成膜步骤中的偏压大小不同，供给混合气体，同时逐渐减少气化的原料气体具有环硼烷骨架分子的材料，以主要包含载气的等离子体处理绝缘膜。

4. 发明申请

US20090090274A1 COMPOSITION FOR LOW DIELECTRIC MATERIAL, LOW DIELECTRIC MATERIAL AND METHOD FOR PRODUCTION THEREOF 失效
标题翻译：低介电材料的组合物，低介电材料及其生产方法
公开(公告)号：US20090090274A1
公开(公告)日：2009-04-09
申请号：US12327117
申请日：2008-12-03
申请人： Teruhiko KUMADA , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
发明人： Teruhiko KUMADA , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
IPC分类号： H01B3/18 , H01B3/30 , H01L21/312
CPC分类号： H01L21/02112 , H01L21/02118 , H01L21/02255 , H01L21/02282 , H01L21/312 , H01L21/318 , Y10T428/31504
摘要： A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.
摘要翻译：通过使用包含含环硼氮环的化合物和下式表示的化合物作为溶剂的组合物和/或通过在氧浓度不高的气氛下退火含有环硼氮烷环化合物的组合物来制备低介电材料在200〜600℃下为0.1vol％以下。在下式中，Ra和Rc独立地表示烷基或酰基。 Rb表示氢原子或烷基; n表示1〜5的整数。

5. 发明申请

US20050282015A1 Composition for low dielectric material, low dielectric material and method for production thereof 审中-公开
标题翻译：用于低介电材料，低介电材料的组合物及其制备方法
公开(公告)号：US20050282015A1
公开(公告)日：2005-12-22
申请号：US11000567
申请日：2004-12-01
申请人： Teruhiko Kumada , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
发明人： Teruhiko Kumada , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
IPC分类号： B05D3/12 , B32B9/00 , C09K3/00 , H01L21/312 , H01L21/318
CPC分类号： H01L21/02112 , H01L21/02118 , H01L21/02255 , H01L21/02282 , H01L21/312 , H01L21/318 , Y10T428/31504
摘要： A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.
摘要翻译：通过使用包含含环硼氮环的化合物和下式表示的化合物作为溶剂的组合物和/或通过在氧浓度不高的气氛下退火含有环硼氮烷环化合物的组合物来制备低介电材料在200至600℃下为0.1vol％以下。在下式中，R a和R c独立地表示烷基或酰基; R b表示氢原子或烷基; n表示1〜5的整数。

6. 发明申请

US20100112805A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100112805A1
公开(公告)日：2010-05-06
申请号：US12683949
申请日：2010-01-07
申请人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Kinya Goto , Masazumi Matsuura
发明人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Kinya Goto , Masazumi Matsuura
IPC分类号： H01L21/768
CPC分类号： H01L21/02271 , H01L21/314 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.
摘要翻译：提供一种半导体器件及其制造方法，其采用环硼氮烷化合物的绝缘膜，以提供绝缘材料和互连材料，增加的机械强度和其它改进的特性之间的增强的接触。半导体器件包括具有埋设有第一导体层的凹部的第一绝缘层，形成在第一绝缘层上的蚀刻阻挡层，形成在蚀刻停止层上的第二绝缘层，形成在第二绝缘层上的第三绝缘层层，以及埋在第二绝缘层和第三绝缘层的凹部中的第二导体层。第二绝缘层和第三绝缘层通过化学气相沉积生长，其中含有碳源的环硼氮烷化合物用作源材料，第三绝缘层的碳含量比第二绝缘层小。

7. 发明申请

US20060091382A1 Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device 有权
公开(公告)号：US20060091382A1
公开(公告)日：2006-05-04
申请号：US11294412
申请日：2005-12-06
申请人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
发明人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
IPC分类号： H01L29/08
CPC分类号： H01L21/02118 , H01L21/314 , H01L21/318
摘要： There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

8. 发明申请

US20050181628A1 Process for preparing low dielectric constant material 审中-公开
标题翻译：制备低介电常数材料的工艺
公开(公告)号：US20050181628A1
公开(公告)日：2005-08-18
申请号：US11107800
申请日：2005-04-18
申请人： Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
发明人： Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
IPC分类号： C08G79/08 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/51 , H01L21/8242
CPC分类号： H01L21/02118 , H01L21/02164 , H01L21/312 , H01L21/314 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L29/51 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A process for preparing a low dielectric constant material comprising heat-treating a compound containing a borazine skeleton structure of the formula: wherein at least one of R1 to R6 is a bond which binds said borazine skeleton structure to a molecule of a inorganic or organic compound, and/or R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not a hydrogen atom.
摘要翻译：一种制备低介电常数材料的方法，包括热处理含有下式的环硼氮烷骨架结构的化合物：其中R 1至R 6中的至少一个为将所述环硼氮烷骨架结构结合成无机或有机化合物的分子和/或R 1至R 6的键独立地为氢原子，具有1个 20个碳原子，芳基，取代芳基，烯基，氨基，烷基氨基，烷氧基，硫代烷氧基，羰基，甲硅烷基，烷基甲硅烷基，膦基，烷基膦基或下式的基团：Si（OR 7）（OR 8）（OR 9））和至少一个 R 1至R 6不是氢原子。

9. 发明授权

US08404314B2 Plasma CVD apparatus, method for forming thin film and semiconductor device 有权
标题翻译：等离子体CVD装置，薄膜形成方法及半导体装置
公开(公告)号：US08404314B2
公开(公告)日：2013-03-26
申请号：US12294645
申请日：2007-03-23
申请人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda
发明人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda
IPC分类号： C23C8/00 , H01L23/58
CPC分类号： C23C16/30 , C23C16/342 , C23C16/511 , H01J37/32532 , H01L21/318
摘要： A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.
摘要翻译：一种等离子体CVD装置，包括反应室，该反应室包括用于供给包含环硼氮烷骨架的化合物的入口，设置在反应室内的供电电极，用于支撑基板并施加负电荷;以及等离子体产生机构，经由衬底到达馈电电极，用于在反应室内产生等离子体。一种方法形成薄膜，其中通过使用包含环硼氮烷骨架的化合物作为原料形成薄膜，并且半导体器件包括通过诸如绝缘膜的方法形成的薄膜。该装置和方法能够制造其中低介电常数和高机械强度长时间稳定地保持并且确保绝缘特性的薄膜。

10. 发明申请

US20090232987A1 Composition for Chemical Vapor Deposition Film-Formation and Method for Production of Low Dielectric Constant Film 有权
标题翻译：化学气相沉积薄膜形成的组成和低介电常数薄膜的制造方法
公开(公告)号：US20090232987A1
公开(公告)日：2009-09-17
申请号：US12084568
申请日：2006-11-15
申请人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Tetsuya Yamamoto , Yasutaka Nakatani , Takuya Kamiyama
发明人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Tetsuya Yamamoto , Yasutaka Nakatani , Takuya Kamiyama
IPC分类号： C23C16/00 , C09D5/00
CPC分类号： C23C16/342 , C07F5/02 , C23C16/30 , H01L21/314 , H01L21/318
摘要： The present invention provides a composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. By using the composition, physical properties such as low dielectric constant property and mechanical strength of the thin film produced from a borazine-ring-containing compound can be improved.
摘要翻译：本发明提供一种化学气相沉积膜形成用组合物，其含有化学式1表示的环硼氮烷化合物，其满足以下条件中的至少一种：组合物中的各卤素原子的含量为100ppb以下，组合物中的每种金属元素为100ppb以下。在化学式1中，R 1可以相同或不同，为氢原子，烷基，链烯基或炔基，其中至少一个为氢原子; R2可以相同或不同，为氢原子，烷基，烯基或炔基，其中至少一个为烷基，烯基或炔基。通过使用该组合物，可以提高由含有环硼氮烷的化合物制造的薄膜的低介电常数性能和机械强度等物理性能。

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