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1. 发明申请

US20080026500A1 FLAT PANEL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：平板显示装置及其制造方法
公开(公告)号：US20080026500A1
公开(公告)日：2008-01-31
申请号：US11781518
申请日：2007-07-23
申请人： Han-Na Jo , Chi-Woo Kim , Young-Jin Chang , Jae-Beom Choi
发明人： Han-Na Jo , Chi-Woo Kim , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L33/00 , H01L21/335
CPC分类号： H01L27/1285
摘要： A flat panel display device includes a substrate including a pixel area having a plurality of pixel parts and a peripheral circuit area disposed adjacent to the pixel area to drive the pixel parts, a circuit TFT disposed in the peripheral circuit area, the circuit TFT including a first semiconductor layer having a first crystal growth in a lateral direction, and a pixel TFT disposed in the pixel area, the pixel TFT including a second semiconductor layer having a second crystal isotropic growth.
摘要翻译：平板显示装置包括：基板，包括具有多个像素部分的像素区域和与像素区域相邻设置的外围电路区域以驱动像素部分;电路TFT，设置在外围电路区域中;电路TFT包括：在横向方向上具有第一晶体生长的第一半导体层和设置在像素区域中的像素TFT，所述像素TFT包括具有第二晶体各向同性生长的第二半导体层。

2. 发明授权

US07820466B2 Flat panel display device and method for manufacturing the same using sequental lateral solidifcation and solid phase crystallization 有权
标题翻译：平板显示装置及其制造方法使用顺序侧向固化和固相结晶
公开(公告)号：US07820466B2
公开(公告)日：2010-10-26
申请号：US11781518
申请日：2007-07-23
申请人： Han-Na Jo , Chi-Woo Kim , Young-Jin Chang , Jae-Beom Choi
发明人： Han-Na Jo , Chi-Woo Kim , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L21/00
CPC分类号： H01L27/1285
摘要： A flat panel display device includes a substrate including a pixel area having a plurality of pixel parts and a peripheral circuit area disposed adjacent to the pixel area to drive the pixel parts, a circuit TFT disposed in the peripheral circuit area, the circuit TFT including a first semiconductor layer having a first crystal growth in a lateral direction, and a pixel TFT disposed in the pixel area, the pixel TFT including a second semiconductor layer having a second crystal isotropic growth.
摘要翻译：平板显示装置包括：基板，包括具有多个像素部分的像素区域和与像素区域相邻设置的外围电路区域以驱动像素部分;电路TFT，设置在外围电路区域中;电路TFT包括：在横向方向上具有第一晶体生长的第一半导体层和设置在像素区域中的像素TFT，所述像素TFT包括具有第二晶体各向同性生长的第二半导体层。

3. 发明授权

US07754549B2 Method of manufacturing thin film transistor array panel 有权
标题翻译：制造薄膜晶体管阵列面板的方法
公开(公告)号：US07754549B2
公开(公告)日：2010-07-13
申请号：US11839683
申请日：2007-08-16
申请人： Jae-Beom Choi , Young-jin Chang , Yoon-Seok Choi , Seung-Hwan Shim , Han-Na Jo , Jung-Hoon Shin , Joon-Young Koh
发明人： Jae-Beom Choi , Young-jin Chang , Yoon-Seok Choi , Seung-Hwan Shim , Han-Na Jo , Jung-Hoon Shin , Joon-Young Koh
IPC分类号： H01L29/786
CPC分类号： H01L21/02672 , H01L21/02532 , H01L27/1277 , H01L27/1281
摘要： A method of manufacturing a thin film transistor array panel includes forming an amorphous silicon film on an insulating substrate; forming a sacrificial film having an embossed surface on the amorphous silicon film; contacting a metal plate with the sacrificial film and performing heat-treatment for crystallizing the amorphous silicon film to change the amorphous silicon film to a polycrystalline silicon film; removing the metal plate and the sacrificial film; patterning the polycrystalline silicon film to form a semiconductor; forming a gate insulating layer which covers the semiconductor; forming a gate line on the gate insulating layer, a portion of the gate line overlapping the semiconductor; heavily doping a conductive impurity into portions of the semiconductor to form a source region and a drain region; forming an interlayer insulating layer which covers the gate line and the semiconductor; and forming a data line and an output electrode connected to the source and drain regions, respectively, on the interlayer insulating layer.
摘要翻译：制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成非晶硅膜; 在所述非晶硅膜上形成具有压花表面的牺牲膜; 使金属板与牺牲膜接触，并进行热处理以使非晶硅膜结晶，将非晶硅膜改变为多晶硅膜; 去除金属板和牺牲膜; 图案化多晶硅膜以形成半导体; 形成覆盖半导体的栅极绝缘层; 在所述栅极绝缘层上形成栅极线，所述栅极线的一部分与所述半导体重叠; 将导电杂质重掺杂到半导体的部分中以形成源极区和漏极区; 形成覆盖所述栅极线和所述半导体的层间绝缘层; 以及分别在层间绝缘层上形成连接到源区和漏区的数据线和输出电极。

4. 发明授权

US07573552B2 Transflective liquid crystal display device and method of fabricating the same 失效
标题翻译：反射式液晶显示装置及其制造方法
公开(公告)号：US07573552B2
公开(公告)日：2009-08-11
申请号：US11925487
申请日：2007-10-26
申请人： Yoon-Seok Choi , Young-Jin Chang , Jae-Beom Choi , Seung-Hwan Shim , Han-Na Jo
发明人： Yoon-Seok Choi , Young-Jin Chang , Jae-Beom Choi , Seung-Hwan Shim , Han-Na Jo
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/13362 , G02F1/13363 , G02F1/133788 , G02F2001/133567 , G02F2001/133638 , G02F2001/136231 , G02F2413/03 , G02F2413/09
摘要： A transflective liquid crystal display device has improved light efficiency. A method of fabricating a transflective liquid crystal display device including a thin film transistor substrate having a transmissive region and a reflective region, includes forming a retardation layer on a lower surface of the thin film transistor substrate, aligning a mask having a reflective region pattern on the lower surface of the thin film transistor substrate, and forming a light efficiency enhancer by selectively removing the retardation layer by irradiating a laser onto the lower surface of the thin film transistor substrate through the mask.
摘要翻译：半透射型液晶显示装置具有提高的光效率。一种制造半透射型液晶显示装置的方法，其包括具有透射区域和反射区域的薄膜晶体管基板，包括在薄膜晶体管基板的下表面上形成延迟层，将具有反射区域图案的掩模对准薄膜晶体管基板的下表面，并且通过通过掩模将激光照射到薄膜晶体管基板的下表面上选择性地去除相位差层来形成光效率增强器。

5. 发明申请

US20080100782A1 Transflective Liquid Crystal Display Device and Method of Fabricating the Same 失效
标题翻译：透反液晶显示装置及其制造方法
公开(公告)号：US20080100782A1
公开(公告)日：2008-05-01
申请号：US11925487
申请日：2007-10-26
申请人： Yoon-Seok Choi , Young-Jin Chang , Jae-Beom Choi , Seung-Hwan Shim , Han-Na Jo
发明人： Yoon-Seok Choi , Young-Jin Chang , Jae-Beom Choi , Seung-Hwan Shim , Han-Na Jo
IPC分类号： G02F1/1335 , H01L21/70
CPC分类号： G02F1/133555 , G02F1/13362 , G02F1/13363 , G02F1/133788 , G02F2001/133567 , G02F2001/133638 , G02F2001/136231 , G02F2413/03 , G02F2413/09
摘要： A transflective liquid crystal display device has improved light efficiency. A method of fabricating a transflective liquid crystal display device including a thin film transistor substrate having a transmissive region and a reflective region, includes forming a retardation layer on a lower surface of the thin film transistor substrate, aligning a mask having a reflective region pattern on the lower surface of the thin film transistor substrate, and forming a light efficiency enhancer by selectively removing the retardation layer by irradiating a laser onto the lower surface of the thin film transistor substrate through the mask.
摘要翻译：半透射型液晶显示装置具有提高的光效率。一种制造半透射型液晶显示装置的方法，其包括具有透射区域和反射区域的薄膜晶体管基板，包括在薄膜晶体管基板的下表面上形成延迟层，将具有反射区域图案的掩模对准薄膜晶体管基板的下表面，并且通过通过掩模将激光照射到薄膜晶体管基板的下表面上选择性地去除相位差层来形成光效率增强器。

6. 发明授权

US09236010B2 Array test device and array test method for organic light emitting display device and method for manufacturing the organic light emitting display device 有权
标题翻译：用于有机发光显示装置的阵列测试装置和阵列测试方法以及用于制造有机发光显示装置的方法
公开(公告)号：US09236010B2
公开(公告)日：2016-01-12
申请号：US13449181
申请日：2012-04-17
申请人： Jae-Beom Choi , Won-Kyu Lee , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
发明人： Jae-Beom Choi , Won-Kyu Lee , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
IPC分类号： G01R31/06 , G09G3/32 , G09G3/00
CPC分类号： G09G3/3233 , G09G3/006 , G09G2300/0819 , G09G2300/0852
摘要： An array test method of an organic light emitting diode (OLED) display substrate is provided. The OLED display substrate includes a plurality of pixel circuits. Each pixel circuit includes an anode, a first transistor for transmitting a data signal that controls an amount of light emission of an OLED according to a scan signal, a driving transistor for receiving the data signal, generating a driving current corresponding to the data signal, and transmitting the driving current to the OLED, and a second transistor for diode-connecting a gate electrode and a drain electrode of the driving transistor. The array test method includes: injecting electrons or holes that generate an initialization voltage into the anode by turning on the second transistor; radiating electron beams at the anode; and determining whether or not the driving transistor performs normal operation from an amount of secondary electrons emitted from the anode.
摘要翻译：提供了一种有机发光二极管（OLED）显示基板的阵列测试方法。 OLED显示基板包括多个像素电路。每个像素电路包括阳极，用于发送根据扫描信号控制OLED的发光量的数据信号的第一晶体管，用于接收数据信号的驱动晶体管，产生与数据信号相对应的驱动电流，并向OLED发送驱动电流，以及用于二极管连接驱动晶体管的栅电极和漏电极的第二晶体管。阵列测试方法包括：通过接通第二晶体管来注入向阳极产生初始化电压的电子或空穴; 在阳极处辐射电子束; 以及从所述阳极发出的二次电子的量确定所述驱动晶体管是否进行正常工作。

7. 发明申请

US20120056179A1 Photo sensor, method of manufacturing photo sensor, and display apparatus 审中-公开
标题翻译：光传感器，光传感器的制造方法以及显示装置
公开(公告)号：US20120056179A1
公开(公告)日：2012-03-08
申请号：US13137442
申请日：2011-08-16
申请人： Won-Kyu Lee , Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
发明人： Won-Kyu Lee , Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L31/036 , H01L31/20
CPC分类号： H01L31/1872 , G02F1/13318 , H01L27/3269 , H01L31/1055 , Y02E10/50 , Y02P70/521
摘要： A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.
摘要翻译：光传感器，光传感器的制造方法以及显示装置，所述光传感器包括基板; 在所述基板上的受光单元，所述受光单元包括非晶半导体材料; 第一相邻单元和第二相邻单元，其与所述光接收单元形成为一体，所述第一相邻单元和所述第二相邻单元由所述光接收单元彼此分离; 电连接到第一相邻单元的第一光电传感器电极; 和与第二相邻单元电连接的第二光电传感器电极，其中第一相邻单元和第二相邻单元中的至少一个包括晶体半导体材料。

8. 发明授权

US07824952B2 Display apparatus and method of manufacturing thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07824952B2
公开(公告)日：2010-11-02
申请号：US11689619
申请日：2007-03-22
申请人： Jae-Beom Choi , Young-Jin Chang , Kwan-Wook Jung , Seung-Hwan Shim
发明人： Jae-Beom Choi , Young-Jin Chang , Kwan-Wook Jung , Seung-Hwan Shim
IPC分类号： H01L51/40
CPC分类号： H01L29/04 , H01L27/1229 , H01L27/1288 , H01L27/3262
摘要： A display apparatus, such as an organic light emitting diode (“OLED”) display, is driven by thin film transistors (“TFTs”), including a driving TFT and a switching TFT, and a pixel electrode. The display apparatus includes an amorphous silicon layer for the switching TFT and a microcrystalline silicon or polycrystalline silicon layer for the driving TFT. The amorphous silicon layer and the microcrystalline silicon layer are separated by an insulating layer. The apparatus provides product reliability and high image quality. A method of manufacturing the apparatus is characterized by reducing processing steps, and using a special mask which is a half tone mask or a slit mask adapted to forming a source electrode and a drain electrode of the switching TFT or the driving TFT and a semiconductor layer during a photolithographic process.
摘要翻译：诸如有机发光二极管（“OLED”）显示器的显示装置由包括驱动TFT和开关TFT的薄膜晶体管（“TFT”）以及像素电极驱动。显示装置包括用于开关TFT的非晶硅层和用于驱动TFT的微晶硅或多晶硅层。非晶硅层和微晶硅层被绝缘层分开。该设备提供产品可靠性和高图像质量。制造该装置的方法的特征在于减少处理步骤，并且使用作为适于形成开关TFT或驱动TFT的源电极和漏电极的半色调掩模或狭缝掩模的特殊掩模和半导体层在光刻过程中。

9. 发明授权

US08865578B2 Method of manufacturing polycrystalline silicon layer, and method of manufacturing transistor having the polycrystalline silicon layer 有权
标题翻译：制造多晶硅层的方法以及制造具有多晶硅层的晶体管的方法
公开(公告)号：US08865578B2
公开(公告)日：2014-10-21
申请号：US13186974
申请日：2011-07-20
申请人： Young-Jin Chang , Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Jae-Beom Choi
发明人： Young-Jin Chang , Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Jae-Beom Choi
IPC分类号： H01L21/20 , H01L27/12 , H01L21/02
CPC分类号： H01L27/1214 , H01L21/02422 , H01L21/02532 , H01L21/02675 , H01L27/1285
摘要： An embodiment is directed to a method of manufacturing a polycrystalline silicon layer, the method including providing a crystallization substrate, the crystallization substrate having an amorphous silicon layer on a first substrate, providing a reflection substrate, the reflection substrate having a first region with a reflection panel therein and a second region without the reflection panel, disposing the crystallization substrate and the reflection substrate on one another, and selectively crystallizing the amorphous silicon layer by directing a laser beam onto the crystallization substrate and the reflection substrate, and reflecting the laser beam from the reflection panel.
摘要翻译：一个实施方案涉及制造多晶硅层的方法，该方法包括提供结晶衬底，所述结晶衬底在第一衬底上具有非晶硅层，提供反射衬底，所述反射衬底具有反射的第一区域其中没有反射面板的第二区域，将结晶衬底和反射衬底彼此配置，并且通过将激光束引导到结晶衬底和反射衬底上来选择性地使非晶硅层结晶，并且将激光束从反射面板。

10. 发明申请

US20130056710A1 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20130056710A1
公开(公告)日：2013-03-07
申请号：US13426733
申请日：2012-03-22
申请人： Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin , Se-Hun Park , June-Woo Lee , Kwang-Hae Kim , Jong-Hyun Choi , Kwan-Kyu Lee , Won-Kyu Lee , Jae-Beom Choi
发明人： Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin , Se-Hun Park , June-Woo Lee , Kwang-Hae Kim , Jong-Hyun Choi , Kwan-Kyu Lee , Won-Kyu Lee , Jae-Beom Choi
IPC分类号： H01L27/32 , H01L51/56
CPC分类号： H01L27/1255 , H01L27/3258 , H01L27/3265 , H01L51/5265 , H01L51/5268 , H01L2227/323
摘要： An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.
摘要翻译：一种有机发光显示装置，包括第一绝缘层，第一绝缘层上的第二绝缘层，包括凹凸部，第二绝缘层上的第三绝缘层，第三绝缘层上的像素电极，对置电极面对像素电极，以及像素电极和对置电极之间的有机发光层; 薄膜晶体管，包括有源层，栅电极和连接到有源层的源极/漏极，所述第一绝缘层位于所述有源层和所述栅电极之间，所述第二绝缘层位于所述栅电极与所述栅电极之间，源极/漏极; 以及电容器，其包括与栅电极相同的层上的下电极，与第三绝缘层相同的材料的电介质层，以及与像素电极同层的上电极。

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