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1. 发明申请

US20060124593A1 Colloidal silica based chemical mechanical polishing slurry 审中-公开
标题翻译：胶体二氧化硅基化学机械抛光浆料
公开(公告)号：US20060124593A1
公开(公告)日：2006-06-15
申请号：US11141162
申请日：2005-05-31
申请人： Gert Moyaerts , Ken Delbridge , Nichole Koontz , Saeed Mohseni , Gerome Sayles , Deepak Mahulikar
发明人： Gert Moyaerts , Ken Delbridge , Nichole Koontz , Saeed Mohseni , Gerome Sayles , Deepak Mahulikar
IPC分类号： C09K3/14 , C09G1/02 , C09K13/00 , H01L21/461 , B44C1/22 , H01L21/302 , C09C1/68 , C23F1/00 , B24D3/02
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , C09K3/1472 , C23F3/04 , H01L21/30625
摘要： A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing having alkali metals Li, Na, K, Rb, Cs, Fr and a combination thereof, at a total alkali concentration of about 300 ppb or less, with the proviso that the concentration of Na, if present, is less than 200 ppb; and a medium for suspending the particles is provided. Also, provided are methods of chemical mechanical polishing which included a step of contacting a substrate and a composition according to the present invention. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
摘要翻译：一种用于化学机械抛光基底表面的组合物，其具有多个超高纯度溶胶凝胶加工的用于具有碱金属Li，Na，K，Rb，Cs，Fr及其组合的化学机械抛光的胶体二氧化硅颗粒，其总计碱浓度为约300ppb以下，条件是Na（如果存在）的浓度小于200ppb; 并提供用于悬浮颗粒的介质。此外，提供了化学机械抛光的方法，其包括使基底和根据本发明的组合物接触的步骤。接触在足以使基材平坦化的温度下进行一段时间。

2. 发明申请

US20070075292A1 Ultrapure colloidal silica for use in chemical mechanical polishing applications 有权
标题翻译：超纯胶体二氧化硅用于化学机械抛光应用
公开(公告)号：US20070075292A1
公开(公告)日：2007-04-05
申请号：US11526132
申请日：2006-09-22
申请人： Deepak Mahulikar , Yuhu Wang , Ken Delbridge , Gert Moyaerts , Saeed Mohseni , Nichole Koontz , Bin Hu , Liqing Wen
发明人： Deepak Mahulikar , Yuhu Wang , Ken Delbridge , Gert Moyaerts , Saeed Mohseni , Nichole Koontz , Bin Hu , Liqing Wen
IPC分类号： C23F1/14 , C09K13/00
CPC分类号： C23F3/04 , C01B33/1435 , C01B33/1485 , C01P2004/62 , C01P2004/64 , C01P2006/80 , C09G1/02 , C09K3/1463 , C09K3/1472 , H01L21/31053 , H01L21/3212
摘要： A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0.5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
摘要翻译：一种对基材表面进行化学机械抛光的方法，包括以下步骤：使除了钾和钠之外的每种微量金属杂质含有少于200ppb的多种胶体二氧化硅颗粒的组合物接触，其含量小于2ppm 残余醇，其中不包括钾和钠的痕量金属的累积浓度在约0.5至约5ppm的范围内; 和用于悬浮颗粒的介质; 其中所述组合物是超纯胶体二氧化硅分散体; 并且其中所述接触在足以平坦化基底的温度和时间段内进行。

3. 发明申请

US20070254964A1 Ultrapure colloidal silica for use in chemical mechanical polishing applications 审中-公开
标题翻译：超纯胶体二氧化硅用于化学机械抛光应用
公开(公告)号：US20070254964A1
公开(公告)日：2007-11-01
申请号：US11818730
申请日：2007-06-15
申请人： Deepak Mahulikar , Yuhu Wang , Ken Delbridge , Gert Moyaerts , Saeed Mohseni , Nichole Koontz , Bin Hu , Liqing Wen
发明人： Deepak Mahulikar , Yuhu Wang , Ken Delbridge , Gert Moyaerts , Saeed Mohseni , Nichole Koontz , Bin Hu , Liqing Wen
IPC分类号： B01F3/12 , B08B7/00
CPC分类号： C23F3/04 , C01B33/1435 , C01B33/1485 , C01P2004/62 , C01P2004/64 , C01P2006/80 , C09G1/02 , C09K3/1463 , C09K3/1472 , H01L21/31053 , H01L21/3212
摘要： An ultrapure colloidal silica dispersion comprising colloidal silica particles having a mean or aggregate particle size from about 10 to about 200 nm, wherein the colloidal silica dispersion has less than 200 ppb of each trace metal impurity disposed therein, excluding potassium and sodium, and have less than 2 ppm residual alcohol.
摘要翻译：一种超纯胶体二氧化硅分散体，其包含平均或聚集体粒径为约10至约200nm的胶体二氧化硅颗粒，其中所述胶体二氧化硅分散体在其中排列的不含钾和钠的痕量金属杂质少于200ppb，超过2 ppm的残留酒精。

4. 发明申请

US20120003901A1 COMPOSITION FOR ADVANCED NODE FRONT-AND BACK-END OF LINE CHEMICAL MECHANICAL POLISHING 有权
标题翻译：线性化学机械抛光的前置和后端的组合物
公开(公告)号：US20120003901A1
公开(公告)日：2012-01-05
申请号：US12828766
申请日：2010-07-01
申请人： Bin Hu , Abhishek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
发明人： Bin Hu , Abhishek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
IPC分类号： B24B1/00 , C09K13/04 , C09K13/00
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , H01L21/0475 , H01L21/31053 , H01L21/31055 , H01L21/3212 , H01L21/76819 , H01L29/66545
摘要： The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
摘要翻译：本公开涉及一种高度可稀释的化学机械抛光浓缩物，其包含研磨剂，酸，稳定剂和水，其使用点pH为2.2-3.5，用于平坦化电流和下一代半导体集成电路FEOL / BEOL 底物。

5. 发明授权

US08961815B2 Composition for advanced node front-and back-end of line chemical mechanical polishing 有权
标题翻译：用于线性化学机械抛光的高级节点前端和后端的组成
公开(公告)号：US08961815B2
公开(公告)日：2015-02-24
申请号：US12828766
申请日：2010-07-01
申请人： Bin Hu , Abhiskek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
发明人： Bin Hu , Abhiskek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
IPC分类号： C09K13/04 , C09K3/14 , C09G1/02 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L29/66
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , H01L21/0475 , H01L21/31053 , H01L21/31055 , H01L21/3212 , H01L21/76819 , H01L29/66545
摘要： The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
摘要翻译：本公开涉及一种高度可稀释的化学机械抛光浓缩物，其包含研磨剂，酸，稳定剂和水，其使用点pH为2.2-3.5，用于平坦化电流和下一代半导体集成电路FEOL / BEOL 底物。

6. 发明授权

US09556371B2 Homogeneous blending 有权
标题翻译：均匀混合
公开(公告)号：US09556371B2
公开(公告)日：2017-01-31
申请号：US13618088
申请日：2012-09-14
申请人： Saeed H. Mohseni , Elizabeth K. Gramm , Deepak Mahulikar
发明人： Saeed H. Mohseni , Elizabeth K. Gramm , Deepak Mahulikar
IPC分类号： B01J13/00 , C09G1/02 , C09K3/14
CPC分类号： C09K3/1463 , C09G1/02
摘要： A method of forming a colloidal dispersion includes providing a first continuous material flow, providing a second continuous material flow, combining the first and second continuous material flows, and moving a continuous flow of a colloidal dispersion in a direction downstream of the first and second continuous flows. The first continuous material flow includes one or more of a diluent (e.g., deionized water), a base, and an acid, and the second continuous material flow includes an abrasive particle solution. The first and second material flows are combined with a Reynolds number greater than about 4400 and less than about 25000 (e.g., about 7400 to about 25000). The colloidal dispersion includes the diluent, the base, the acid, and abrasive particles from the abrasive particle solution.
摘要翻译：形成胶态分散体的方法包括提供第一连续材料流，提供第二连续材料流，组合第一和第二连续材料流，以及在第一和第二连续材料的下游方向上移动胶体分散体的连续流动流动。第一连续材料流包括稀释剂（例如去离子水），碱和酸中的一种或多种，并且第二连续材料流包括研磨颗粒溶液。第一和第二材料流与大于约4400且小于约25000（例如约7400至约25000）的雷诺数组合。胶体分散体包括来自磨料颗粒溶液的稀释剂，碱，酸和磨料颗粒。

7. 发明授权

US08303806B2 Fluid processing 有权
标题翻译：流体加工
公开(公告)号：US08303806B2
公开(公告)日：2012-11-06
申请号：US12702602
申请日：2010-02-09
申请人： Saeed H. Mohseni , Deepak Mahulikar
发明人： Saeed H. Mohseni , Deepak Mahulikar
IPC分类号： B01D35/157 , B01D29/50 , B01D35/00
CPC分类号： B01D35/143 , B01D29/56 , B01D29/96 , B01D2201/265
摘要： Fluid processing apparatuses and systems are disclosed. In some embodiments the fluid processing apparatuses include a movable enclosure, a plurality of filter housings disposed substantially within the movable enclosure, and a stand disposed within the enclosure. The filter housings are in fluid communication with one another. Each filter housing defines an elongate path and is configured to support a respective filter along the elongate flow path to filter a substantially continuous flow of fluid. The stand supports each filter housing such that the elongate flow path of each filter housing is substantially parallel to a vertical axis, wherein each filter housing is independently rotatable, relative to the stand.
摘要翻译：公开了流体处理装置和系统。在一些实施例中，流体处理设备包括可移动的外壳，基本上设置在可移动外壳内的多个过滤器外壳以及设置在外壳内的支架。过滤器壳体彼此流体连通。每个过滤器壳体限定细长的路径并且构造成沿着细长流动路径支撑相应的过滤器以过滤基本连续的流体流。支架支撑每个过滤器壳体，使得每个过滤器壳体的细长流动路径基本上平行于垂直轴线，其中每个过滤器壳体相对于支架独立地可旋转。

8. 发明申请

US20110215053A1 Fluid Processing 有权
标题翻译：流体加工
公开(公告)号：US20110215053A1
公开(公告)日：2011-09-08
申请号：US12850915
申请日：2010-08-05
申请人： Saeed H. Mohseni , Deepak Mahulikar
发明人： Saeed H. Mohseni , Deepak Mahulikar
IPC分类号： B01D37/00 , B01D29/50
CPC分类号： B01D35/143 , B01D29/56 , B01D29/96 , B01D2201/265
摘要： Fluid processing apparatuses and systems are disclosed. In some embodiments the fluid processing apparatuses include a movable enclosure, a plurality of filter housings disposed substantially within the movable enclosure, and a stand disposed within the enclosure. The filter housings are in fluid communication with one another. Each filter housing defines an elongate path and is configured to support a respective filter along the elongate flow path to filter a substantially continuous flow of fluid. The stand supports each filter housing such that the elongate flow path of each filter housing is substantially parallel to a vertical axis, wherein each filter housing is independently rotatable, relative to the stand.
摘要翻译：公开了流体处理装置和系统。在一些实施例中，流体处理设备包括可移动的外壳，基本上设置在可移动外壳内的多个过滤器外壳以及设置在外壳内的支架。过滤器壳体彼此流体连通。每个过滤器壳体限定细长的路径并且构造成沿着细长流动路径支撑相应的过滤器以过滤基本连续的流体流。支架支撑每个过滤器壳体，使得每个过滤器壳体的细长流动路径基本上平行于垂直轴线，其中每个过滤器壳体相对于支架独立地可旋转。

9. 发明申请

US20060283095A1 Fumed silica to colloidal silica conversion process 审中-公开
标题翻译：气相二氧化硅胶体二氧化硅转化工艺
公开(公告)号：US20060283095A1
公开(公告)日：2006-12-21
申请号：US11152873
申请日：2005-06-15
申请人： Deepak Mahulikar , Yuhu Wang
发明人： Deepak Mahulikar , Yuhu Wang
IPC分类号： C01B33/20 , C01B33/141 , C09K3/14 , C01B33/12
CPC分类号： C09K3/1463 , C01B33/14 , C01B33/1435 , C01B33/22
摘要： A method of manufacturing a colloidal silica dispersion, by dissolving a fumed silica in an aqueous solvent having an alkali metal hydroxide to produce an alkaline silicate solution; removing the alkali metal via ion exchange to produce a silicic acid solution; adjusting the temperature, concentration and pH of the silicic acid solution to values sufficient to initiate nucleation and particle growth at elevated temperatures; and cooling the silicic acid solution at a rate sufficient to produce the colloidal silica dispersion. The colloidal silica particles in the colloidal silica dispersion have a mean particle size about 2 nm to about 100 nm. Also provided is a method of chemical mechanical polishing a surface of a substrate by contacting the substrate and a composition having a plurality of colloidal silica particles according to the present invention and a medium for suspending the particles. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
摘要翻译：通过将热解法二氧化硅溶解在具有碱金属氢氧化物的水性溶剂中以制备碱性硅酸盐溶液来制备胶体二氧化硅分散体的方法; 通过离子交换除去碱金属，生成硅酸溶液; 将硅酸溶液的温度，浓度和pH调节到足以在升高的温度下引发成核和颗粒生长的值; 并以足以产生胶体二氧化硅分散体的速率冷却硅酸溶液。胶体二氧化硅分散体中的胶体二氧化硅颗粒的平均粒径约为2nm至约100nm。还提供了通过使基板和具有根据本发明的多个胶体二氧化硅颗粒的组合物和用于悬浮颗粒的介质的组合物进行化学机械抛光基板的表面的方法。接触在足以使基材平坦化的温度下进行一段时间。

10. 发明授权

US06468913B1 Ready-to-use stable chemical-mechanical polishing slurries 有权
标题翻译：即用型稳定化学机械抛光浆
公开(公告)号：US06468913B1
公开(公告)日：2002-10-22
申请号：US09611702
申请日：2000-07-08
申请人： Anthony Mark Pasqualoni , Deepak Mahulikar
发明人： Anthony Mark Pasqualoni , Deepak Mahulikar
IPC分类号： H01L2100
CPC分类号： C09G1/02
摘要： In accordance with the invention, there is provided a chemical-mechanical polishing slurry for polishing a substrate. The slurry is comprised primarily of abrasive particles and an oxidizing agent, wherein the slurry exhibits a stability having a shelf life of at least 30 days.
摘要翻译：根据本发明，提供了一种用于抛光衬底的化学机械抛光浆料。浆料主要由磨料颗粒和氧化剂组成，其中浆料表现出保质期至少为30天的稳定性。

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