专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130125964A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20130125964A1
公开(公告)日：2013-05-23
申请号：US13569217
申请日：2012-08-08
申请人： Chan-Bin MO , Doo-Youl LEE , Young-Jin KIM , Min-Seok OH , Sung-Chan PARK , Yun-Seok LEE , Nam-Kyu Song , Dong-Seop KIM , Min-Sung KIM , Cho-Young LEE , Young-su KIM , Young-Sang PARK
发明人： Chan-Bin MO , Doo-Youl LEE , Young-Jin KIM , Min-Seok OH , Sung-Chan PARK , Yun-Seok LEE , Nam-Kyu Song , Dong-Seop KIM , Min-Sung KIM , Cho-Young LEE , Young-su KIM , Young-Sang PARK
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/03529 , H01L31/0682 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode.
摘要翻译：一种太阳能电池，包括具有第一导电类型的晶体半导体衬底; 在衬底的前表面上的第一掺杂层，并掺杂有第一导电类型的杂质; 在所述基板的前表面上的前表面抗反射膜; 在基板的背面上的背面防反射膜; 本征半导体层，发射极和堆叠在背面防反射膜和基板上的第一辅助电极; 在衬底的背表面上的第二掺杂层，并掺杂有第一杂质; 绝缘膜，其包括覆盖所述第二掺杂层的开口; 在所述开口中的第二辅助电极并且覆盖所述第二掺杂层; 第一辅助电极上的第一电极; 以及第二辅助电极上的第二电极，并与第一电极分离。

2. 发明申请

US20130092224A1 PHOTOELECTRIC DEVICE 有权
标题翻译：光电器件
公开(公告)号：US20130092224A1
公开(公告)日：2013-04-18
申请号：US13424450
申请日：2012-03-20
申请人： Doo-Youl LEE , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
发明人： Doo-Youl LEE , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
IPC分类号： H01L31/0216
CPC分类号： H01L31/022441 , H01L31/0352 , H01L31/0745 , H01L31/0747 , H01L31/075 , Y02E10/547 , Y02E10/548
摘要： A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.
摘要翻译：光电器件在衬底上包括第一半导体结构和第二半导体结构，并且第一半导体结构包括与第二半导体结构不同的导电类型。光电器件还包括第一半导体结构上的第一电极和第二半导体结构上的第二电极以及与第二半导体结构相邻的层间绝缘结构。层间绝缘结构将第一半导体结构与第二半导体结构分开，并将第一半导体结构与第二电极分离。

3. 发明申请

US20130133729A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20130133729A1
公开(公告)日：2013-05-30
申请号：US13562751
申请日：2012-07-31
申请人： Chan-Bin MO , Doo-Youl LEE , Young-Jin KIM , Min-Seok OH , Yun-Seok LEE , Nam-Kyu SONG , Cho-Young LEE , Young-Su KIM , Young-Sang PARK
发明人： Chan-Bin MO , Doo-Youl LEE , Young-Jin KIM , Min-Seok OH , Yun-Seok LEE , Nam-Kyu SONG , Cho-Young LEE , Young-Su KIM , Young-Sang PARK
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper.
摘要翻译：太阳能电池在半导体衬底上包括半导体衬底，第一本征半导体层和第二本征半导体层，第一本征半导体层和第二本征半导体层彼此间隔开，第一导电半导体层和第二本征半导体层分别设置在第一本征半导体层和第二本征半导体层上的导电半导体层以及分别包括在第一导电半导体层和第二导电半导体层上的底层的第一电极和第二电极，底层包括透明导电氧化物和底层上的中间层，中间层包括铜。

4. 发明申请

US20110306164A1 METHOD FOR MANUFACTURING SOLAR CELL 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US20110306164A1
公开(公告)日：2011-12-15
申请号：US12893944
申请日：2010-09-29
申请人： Young Su KIM , Doo-Youl LEE
发明人： Young Su KIM , Doo-Youl LEE
IPC分类号： H01L31/0352
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell according to an exemplary embodiment includes: forming a first doping film on a substrate; patterning the first doping film so as to form a first doping film pattern and so as to expose a portion of the substrate; forming a diffusion prevention film on the first doping film pattern so as to cover the exposed portion of the substrate; etching the diffusion prevention film so as to form spacers on lateral surfaces of the first doping film pattern; forming a second doping film on the first doping film pattern so as to cover the spacer and exposed substrate; forming a first doping region on the substrate surface by diffusing an impurity from the first doping film pattern into the substrate; and forming a second doping region on the substrate surface by diffusing an impurity from the second doping film pattern into the substrate.
摘要翻译：根据示例性实施例的太阳能电池的制造方法包括：在基板上形成第一掺杂膜; 图案化第一掺杂膜以形成第一掺杂膜图案并且暴露基板的一部分; 在所述第一掺杂膜图案上形成扩散防止膜以覆盖所述基板的所述暴露部分; 蚀刻扩散防止膜，以在第一掺杂膜图案的侧表面上形成间隔物; 在所述第一掺杂膜图案上形成第二掺杂膜以覆盖所述间隔物和暴露的基板; 通过将杂质从第一掺杂膜图案扩散到衬底中而在衬底表面上形成第一掺杂区; 以及通过将杂质从所述第二掺杂膜图案扩散到所述衬底中而在所述衬底表面上形成第二掺杂区域。

5. 发明申请

US20120270365A1 METHOD FOR MANUFACTURING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120270365A1
公开(公告)日：2012-10-25
申请号：US13540724
申请日：2012-07-03
申请人： Young Su KIM , Doo-Youl LEE
发明人： Young Su KIM , Doo-Youl LEE
IPC分类号： H01L31/18
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell according to an exemplary embodiment includes: forming a first doping film on a substrate; patterning the first doping film so as to form a first doping film pattern and so as to expose a portion of the substrate; forming a diffusion prevention film on the first doping film pattern so as to cover the exposed portion of the substrate; etching the diffusion prevention film so as to form spacers on lateral surfaces of the first doping film pattern; forming a second doping film on the first doping film pattern so as to cover the spacer and exposed substrate; forming a first doping region on the substrate surface by diffusing an impurity from the first doping film pattern into the substrate; and forming a second doping region on the substrate surface by diffusing an impurity from the second doping film pattern into the substrate.
摘要翻译：根据示例性实施例的太阳能电池的制造方法包括：在基板上形成第一掺杂膜; 图案化第一掺杂膜以形成第一掺杂膜图案并且暴露基板的一部分; 在所述第一掺杂膜图案上形成扩散防止膜以覆盖所述基板的所述暴露部分; 蚀刻扩散防止膜，以在第一掺杂膜图案的侧表面上形成间隔物; 在所述第一掺杂膜图案上形成第二掺杂膜以覆盖所述间隔物和暴露的基板; 通过将杂质从第一掺杂膜图案扩散到衬底中而在衬底表面上形成第一掺杂区; 以及通过将杂质从所述第二掺杂膜图案扩散到所述衬底中而在所述衬底表面上形成第二掺杂区域。

6. 发明申请

US20110126906A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20110126906A1
公开(公告)日：2011-06-02
申请号：US12819307
申请日：2010-06-21
申请人： Hwa-Young KO , Jin-Wook LEE , Doo-Youl LEE
发明人： Hwa-Young KO , Jin-Wook LEE , Doo-Youl LEE
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/035281 , H01L31/0682 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a semiconductor substrate, an n+ region and a p+ region disposed on the semiconductor substrate, a first electrode electrically connected to the n+ region, and a second electrode electrically connected to the p+ region. A trench formed in the semiconductor substrate separates the n+ region from the p+ region.
摘要翻译：太阳能电池包括半导体衬底，设置在半导体衬底上的n +区和p +区，电连接到n +区的第一电极和与p +区电连接的第二电极。形成在半导体衬底中的沟槽将n +区与p +区分离。

7. 发明申请

US20110126907A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20110126907A1
公开(公告)日：2011-06-02
申请号：US12819346
申请日：2010-06-21
申请人： Jin-Wook LEE , Doo-Youl LEE , Hwa-Young KO
发明人： Jin-Wook LEE , Doo-Youl LEE , Hwa-Young KO
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02167 , H01L31/02168 , H01L31/0682 , Y02E10/547
摘要： A solar cell includes; a semiconductor substrate, an n+ region disposed on a surface of the semiconductor substrate, a plurality of first electrodes connected to the n+ region, a p+ region disposed on the surface of the semiconductor substrate and separated from the n+ region, a second electrode connected to the p+ region, and a first dielectric layer which has a positive fixed charge and is disposed between adjacent first electrodes of the plurality of first electrodes, and a method of manufacturing the same.
摘要翻译：太阳能电池包括：半导体衬底，设置在半导体衬底的表面上的n +区，连接到n +区的多个第一电极，设置在半导体衬底的表面上并与n +区分离的p +区，连接到 p +区，以及具有正固定电荷且设置在多个第一电极的相邻第一电极之间的第一电介质层及其制造方法。

8. 发明申请

US20080203590A1 INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE WITH OVERLAY KEY AND ALIGNMENT KEY AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有覆盖键和对准的集成电路半导体器件及其制造方法
公开(公告)号：US20080203590A1
公开(公告)日：2008-08-28
申请号：US12111651
申请日：2008-04-29
申请人： Chang-Jin KANG , Myeong-Cheol KIM , Man-Hyoung RYOO , Si-Hyeung LEE , Doo-Youl LEE
发明人： Chang-Jin KANG , Myeong-Cheol KIM , Man-Hyoung RYOO , Si-Hyeung LEE , Doo-Youl LEE
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , G03F7/70633 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit semiconductor device including a cell region formed in a first portion of a silicon substrate, the cell region including a first trench formed in the silicon substrate, a first buried insulating layer filled in the first trench, a first insulating pattern formed over the silicon substrate, and a first conductive pattern formed over the first insulating pattern. An overlay key region is formed in a second portion of the silicon substrate and includes a second trench formed in the silicon substrate, a second insulating pattern formed over the silicon substrate and used as an overlay key, and a second conductive pattern formed over the second insulating pattern and formed by correcting overlay and alignment errors using the second insulating pattern. An alignment key region is formed in a third portion of the silicon substrate and includes a third trench formed in the silicon substrate and used as an alignment key, a second buried insulating layer formed in the third trench, and a third conductive pattern formed over the second buried insulating layer and the third trench.
摘要翻译：一种集成电路半导体器件，包括形成在硅衬底的第一部分中的单元区域，所述单元区域包括形成在所述硅衬底中的第一沟槽，填充在所述第一沟槽中的第一掩埋绝缘层，形成在所述第一沟槽上的第一绝缘图案硅衬底和形成在第一绝缘图案上的第一导电图案。覆盖键区域形成在硅衬底的第二部分中，并且包括在硅衬底中形成的第二沟槽，形成在硅衬底上并用作覆盖键的第二绝缘图案，以及形成在第二衬底上的第二导电图案绝缘图案，并且通过使用第二绝缘图案校正覆盖和对准误差而形成。对准键区域形成在硅衬底的第三部分中，并且包括形成在硅衬底中并用作对准键的第三沟槽，形成在第三沟槽中的第二掩埋绝缘层和形成在第三沟槽上的第三导电图案第二掩埋绝缘层和第三沟槽。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式