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1. 发明授权

US06597015B2 Method of fabricating thin-film transistor 有权
公开(公告)号：US06597015B2
公开(公告)日：2003-07-22
申请号：US10154603
申请日：2002-05-22
申请人： Chien-Sheng Yang , Fang-Chen Luo
发明人： Chien-Sheng Yang , Fang-Chen Luo
IPC分类号： H01L2100
CPC分类号： H01L27/1288 , G02F1/1368 , H01L27/1214 , H01L27/3244 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765
摘要： A method of fabricating a thin-film transistor on an insulation substrate. A first conductive layer, a gate dielectric layer, a silicon layer and a doped silicon layer are formed on the insulation substrate. These four layers are patterned to form a gate and a gate line. A second conductive layer is formed over the insulation substrate. The second conductive layer and the doped silicon layer are patterned to form a source/drain region, a source/drain conductive layer and a source/drain line on both sides of the gate line. A protection layer is formed over the insulation layer, followed by a patterning step to form openings on the source/drain conductive layer and the source/drain line. A transparent conductive layer is formed on the protection layer and in the openings. After being patterned, a pixel electrode is formed, and a portion of the transparent conductive layer remains to electrically connect the source/drain line and the source/drain conductive layer. The method of fabricating the thin-film transistor can be applied to fabrication of fax machine, CIS such as scanner and various electronic devices. It can also be applied to fabrication of normal thin-film transistor flat panel display such as liquid crystal display (LCD) and organic light emitting diode (OLED).

2. 发明授权

US06486009B2 Method of fabricating thin-film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US06486009B2
公开(公告)日：2002-11-26
申请号：US09843994
申请日：2001-04-27
申请人： Chien-Sheng Yang , Fang-Chen Luo
发明人： Chien-Sheng Yang , Fang-Chen Luo
IPC分类号： H01L2100
CPC分类号： H01L27/1288 , G02F1/1368 , H01L27/1214 , H01L27/3244 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765
摘要： A method of fabricating a thin-film transistor on an insulation substrate. A first conductive layer, a gate dielectric layer, a silicon layer and a doped silicon layer are formed on the insulation substrate. These four layers are patterned to form a gate and a gate line. A second conductive layer is formed over the insulation substrate. The second conductive layer and the doped silicon layer are patterned to form a source/drain region, a source/drain conductive layer and a source/drain line on both sides of the gate line. A protection layer is formed over the insulation layer, followed by a patterning step to form openings on the source/drain conductive layer and the source/drain line. A transparent conductive layer is formed on the protection layer and in the openings. After being patterned, a pixel electrode is formed, and a portion of the transparent conductive layer remains to electrically connect the source/drain line and the source/drain conductive layer. The method of fabricating the thin-film transistor can be applied to fabrication of fax machine, CIS such as scanner and various electronic devices. It can also be applied to fabrication of normal thin-film transistor flat panel display such as liquid crystal display (LCD) and organic light emitting diode (OLED).
摘要翻译：一种在绝缘基板上制造薄膜晶体管的方法。在绝缘基板上形成第一导电层，栅介质层，硅层和掺杂硅层。将这四层图案化以形成栅极和栅极线。第二导电层形成在绝缘基板上。将第二导电层和掺杂硅层图案化以在栅极线的两侧上形成源极/漏极区域，源极/漏极导电层和源极/漏极线。在绝缘层上形成保护层，接着形成图案化步骤，以在源极/漏极导电层和源极/漏极线上形成开口。在保护层和开口中形成透明导电层。在图案化之后，形成像素电极，并且透明导电层的一部分保持电源连接源极/漏极线和源极/漏极导电层。制造薄膜晶体管的方法可以应用于传真机，诸如扫描器和各种电子设备的CIS的制造。也可以应用于液晶显示器（LCD）和有机发光二极管（OLED）等普通薄膜晶体管平板显示器的制造。

3. 发明授权

US08441603B2 Liquid crystal display structure 有权
标题翻译：液晶显示结构
公开(公告)号：US08441603B2
公开(公告)日：2013-05-14
申请号：US11847341
申请日：2007-08-30
申请人： Fang-Chen Luo , Wei-Chih Chang
发明人： Fang-Chen Luo , Wei-Chih Chang
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/136227 , G02F2001/133357 , G02F2001/136222
摘要： A liquid crystal display structure includes a first substrate panel, a second substrate panel, and a liquid crystal layer between the first substrate panel and the second substrate panel. Pixel portions, formed by respective electrodes for applying a voltage to the liquid crystal layer, include a transparent substrate panel, an organic insulating layer, a patterned reflective layer, a dielectric layer, a transparent conductive layer and a thin film transistor. The organic insulating layer is formed over the transparent substrate panel. The patterned reflective layer is formed over the organic insulating layer exposing a portion of the organic insulating layer. The dielectric layer is formed over the patterned reflective layer. The dielectric layer has a smooth upper surface. The transparent conductive layer is over the dielectric layer. The transparent conductive layer is connected to the thin film transistor so that the thin film transistor can drive the transparent conductive electrode.
摘要翻译：液晶显示结构包括第一衬底面板，第二衬底面板和在第一衬底面板和第二衬底面板之间的液晶层。由用于向液晶层施加电压的各个电极形成的像素部分包括透明基板，有机绝缘层，图案化反射层，电介质层，透明导电层和薄膜晶体管。有机绝缘层形成在透明基板上。图案化的反射层形成在有机绝缘层上，暴露有机绝缘层的一部分。电介质层形成在图案化的反射层上。电介质层具有平滑的上表面。透明导电层在电介质层的上方。透明导电层与薄膜晶体管连接，薄膜晶体管能驱动透明导电电极。

4. 发明申请

US20090305473A1 METHOD FOR FABRICATING THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管的制作方法
公开(公告)号：US20090305473A1
公开(公告)日：2009-12-10
申请号：US12258451
申请日：2008-10-27
申请人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
发明人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
IPC分类号： H01L21/336
CPC分类号： H01L29/7869
摘要： A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘层以覆盖栅极。在栅极绝缘层上形成金属氧化物材料层。在金属氧化物材料层上形成光致抗蚀剂层，其中栅极上方的光致抗蚀剂层的厚度大于与栅极相邻的两侧上方的光致抗蚀剂层的厚度。通过使用光致抗蚀剂层作为掩模，去除金属氧化物材料层的一部分以形成金属氧化物活性层。去除与栅极相邻的两侧上方的光致抗蚀剂层，剩余的光致抗蚀剂层覆盖金属氧化物活性层的一部分。在由光致抗蚀剂层覆盖的金属氧化物有源层上形成源极和漏极。

5. 发明申请

US20060197087A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20060197087A1
公开(公告)日：2006-09-07
申请号：US11307160
申请日：2006-01-26
申请人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
发明人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
IPC分类号： H01L29/04
CPC分类号： H01L29/78669 , H01L29/66765 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Next, source/drain regions are formed over the channel layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。薄膜晶体管（TFT）包括衬底，栅极，栅极间介电层，沟道层和源极/漏极区。栅极形成在衬底上。在覆盖栅极的衬底上形成栅极间电介质层。在栅极间电介质层的一部分上形成掺杂非晶硅层，至少覆盖栅极以用作沟道层。接下来，在沟道层上形成源/漏区。

6. 发明申请

US20060119753A1 Stacked storage capacitor structure for a thin film transistor liquid crystal display 有权
标题翻译：用于薄膜晶体管液晶显示器的堆叠存储电容器结构
公开(公告)号：US20060119753A1
公开(公告)日：2006-06-08
申请号：US11004389
申请日：2004-12-03
申请人： Fang-Chen Luo , Chang-Cheng Lo
发明人： Fang-Chen Luo , Chang-Cheng Lo
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , H01L27/12
摘要： A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.
摘要翻译：一种用于TFT-LCD的每个像素的堆叠存储电容器结构，其中第一存储电容器由第一金属层，栅极绝缘体层和第二金属层形成。第二电容器由第二金属层，钝化绝缘体层和ITO层形成。第一金属层和ITO层通过在通过栅极绝缘体和钝化绝缘体层的整个制造工艺中的一个绝缘体蚀刻步骤中被蚀刻的通孔而接合在一起。这样，两个电容器以堆叠的方式并联连接。利用堆叠的存储电容器结构，电荷存储容量增加而不显着影响像素的开口率。 ITO和像素电极可以是沉积在钝化绝缘体层上的铟氧化物层的不同部分。

7. 发明授权

US4135959A Method of manufacture of flat panel display device 失效
标题翻译：平板显示装置的制造方法
公开(公告)号：US4135959A
公开(公告)日：1979-01-23
申请号：US780611
申请日：1977-03-23
申请人： Fang-Chen Luo , Thomas P. Brody
发明人： Fang-Chen Luo , Thomas P. Brody
IPC分类号： G09F13/22 , G09F9/30 , G09G3/20 , G09G3/30 , G09G3/32 , H04N3/14 , H05B33/12 , H05B33/26 , H05B35/00 , B05D5/12
CPC分类号： H04N3/14 , G09G3/32 , G09G2300/0842
摘要： A large area integrated solid-state flat panel display is detailed in which thin film transistor addressing and drive circuitry is provided at each individual picture point with a display medium. The preferred display medium is an electroluminescent phosphor layer. An insulating layer of laminated photoresist is disposed over all electrical circuit elements except the electroluminescent drive electrodes.

8. 发明授权

US08089588B2 Thin-film transistor array substrate 有权
标题翻译：薄膜晶体管阵列基板
公开(公告)号：US08089588B2
公开(公告)日：2012-01-03
申请号：US11163725
申请日：2005-10-28
申请人： Fang-Chen Luo
发明人： Fang-Chen Luo
IPC分类号： G02F1/1368 , G02F1/1343
CPC分类号： G02F1/13624 , G02F1/133555 , G02F1/1368 , G02F2001/134345
摘要： A thin-film transistor array substrate, used in a transflective liquid crystal display. The thin-film transistor array substrate has a substrate, a plurality of pixels, a plurality of scan lines and a plurality of data lines. Each of the pixels has a transparent sub-pixel and a reflective sub-pixel, while the transparent sub-pixel further has a transparent electrode and a first thin-film transistor, and the reflective sub-pixel has a reflective pixel electrode and a second thin-film transistor. The pixel electrode of each sub-pixel is thus electrically connected to a different thin-film transistor. The step of forming a molybdenum layer is thus not required, saving fabrication cost.
摘要翻译：薄膜晶体管阵列基板，用于半透射型液晶显示器。薄膜晶体管阵列基板具有基板，多个像素，多条扫描线和多条数据线。每个像素具有透明子像素和反射子像素，而透明子像素还具有透明电极和第一薄膜晶体管，并且反射子像素具有反射像素电极和第二薄膜晶体管。因此，每个子像素的像素电极电连接到不同的薄膜晶体管。因此不需要形成钼层的步骤，从而节省制造成本。

9. 发明授权

US07277145B2 Thin-film transistor array substrate 有权
标题翻译：薄膜晶体管阵列基板
公开(公告)号：US07277145B2
公开(公告)日：2007-10-02
申请号：US11163724
申请日：2005-10-28
申请人： Fang-Chen Luo
发明人： Fang-Chen Luo
IPC分类号： G02F1/1368 , G02F1/1343
CPC分类号： G02F1/13624 , G02F1/133555 , G02F1/1368 , G02F2001/134345
摘要： A thin-film transistor array substrate, used in a transflective liquid crystal display. The thin-film transistor array substrate has a substrate, a plurality of pixels, a plurality of scan lines and a plurality of data lines. Each of the pixels has a transparent sub-pixel and a reflective sub-pixel, while the transparent sub-pixel further has a transparent electrode and a first thin-film transistor, and the reflective sub-pixel has a reflective pixel electrode and a second thin-film transistor. The pixel electrode of each sub-pixel is thus electrically connected to a different thin-film transistor. The step of forming a molybdenum layer is thus not required, saving fabrication cost.
摘要翻译：薄膜晶体管阵列基板，用于半透射型液晶显示器。薄膜晶体管阵列基板具有基板，多个像素，多条扫描线和多条数据线。每个像素具有透明子像素和反射子像素，而透明子像素还具有透明电极和第一薄膜晶体管，并且反射子像素具有反射像素电极和第二薄膜晶体管。因此，每个子像素的像素电极电连接到不同的薄膜晶体管。因此不需要形成钼层的步骤，从而节省制造成本。

10. 发明授权

US07224420B2 Thin-film transistor array substrate 有权
公开(公告)号：US07224420B2
公开(公告)日：2007-05-29
申请号：US11163726
申请日：2005-10-28
申请人： Fang-Chen Luo
发明人： Fang-Chen Luo
IPC分类号： G02F1/1368 , G02F1/1343
CPC分类号： G02F1/13624 , G02F1/133555 , G02F1/1368 , G02F2001/134345
摘要： A thin-film transistor array substrate, used in a transflective liquid crystal display. The thin-film transistor array substrate has a substrate, a plurality of pixels, a plurality of scan lines and a plurality of data lines. Each of the pixels has a transparent sub-pixel and a reflective sub-pixel, while the transparent sub-pixel further has a transparent electrode and a first thin-film transistor, and the reflective sub-pixel has a reflective pixel electrode and a second thin-film transistor. The pixel electrode of each sub-pixel is thus electrically connected to a different thin-film transistor. The step of forming a molybdenum layer is thus not required, saving fabrication cost.

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