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1. 发明授权

US06719918B2 Method of reducing notching during reactive ion etching 失效
标题翻译：反应离子蚀刻时减少切口的方法
公开(公告)号：US06719918B2
公开(公告)日：2004-04-13
申请号：US10025798
申请日：2001-12-26
申请人： Byeung-leul Lee , Taek-ryong Chung , Joon-hyock Choi , Won-youl Choi , Kyu-dong Jung , Sang-woo Lee
发明人： Byeung-leul Lee , Taek-ryong Chung , Joon-hyock Choi , Won-youl Choi , Kyu-dong Jung , Sang-woo Lee
IPC分类号： H01L213065
CPC分类号： H01L21/32137 , H01L21/28114
摘要： A method of reducing notching during reactive ion etching (RIE) is provided. The method is useful when RIE is performed to pass through a silicon layer on a multi-layered structure on which the silicon layer, an insulating layer and a silicon substrate are sequentially deposited. The method includes the steps of: forming an insulating layer on a silicon substrate; forming trenches on the insulating layer to expose the silicon substrate; forming a silicon layer on the insulating layer to fill the trenches; and patterning the silicon layer to form first etch regions, which pass through the silicon layer, to include the trenches. According to the method, it is possible to remarkably reduce notching without depositing a metal layer, when a multi-layered structure including a silicon layer which is etched to be passed through during RIE is fabricated.
摘要翻译：提供了一种在反应离子蚀刻（RIE）下减少切口的方法。当RIE被执行以通过其上依次沉积硅层，绝缘层和硅衬底的多层结构上的硅层时，该方法是有用的。该方法包括以下步骤：在硅衬底上形成绝缘层; 在绝缘层上形成沟槽以暴露硅衬底; 在所述绝缘层上形成硅层以填充所述沟槽; 以及图案化硅层以形成通过硅层的包括沟槽的第一蚀刻区域。根据该方法，制造在RIE中被蚀刻而被通过的包含硅层的多层结构时，不沉积金属层可显着地减少切口。

2. 发明授权

US07230307B2 Vertical offset structure and method for fabricating the same 失效
标题翻译：垂直偏移结构及其制造方法
公开(公告)号：US07230307B2
公开(公告)日：2007-06-12
申请号：US11183863
申请日：2005-07-19
申请人： Sang-woo Lee , Byeung-leul Lee , Jong-pal Kim , Joon-hyock Choi
发明人： Sang-woo Lee , Byeung-leul Lee , Jong-pal Kim , Joon-hyock Choi
IPC分类号： H01L27/14 , H01L29/82 , H01L29/84
CPC分类号： B81C1/00182 , B81B2201/0235 , B81C2203/0118 , G01P15/0802 , G01P15/125
摘要： A vertical offset structure and a method for fabricating the same. The vertical offset structure includes a substrate; a fixed electrode fixing portion formed on the substrate; a fixed electrode moving portion formed at a position away from an upper portion of the substrate by a predetermined distance; a spring portion for connecting the fixed electrode fixing portion and the fixed electrode moving portion to each other so that the fixed electrode moving portion moves into a direction substantially perpendicular to a plate surface of the substrate; a movable electrode located away from the upper portion of the substrate by a predetermined distance to have a predetermined interval horizontal to the fixed electrode moving portion; and a cap wafer bonded to a predetermined area of one of the fixed electrode moving portion and the movable electrode.
摘要翻译：垂直偏移结构及其制造方法。垂直偏移结构包括基板; 形成在所述基板上的固定电极固定部; 固定电极移动部，形成在远离所述基板上部预定距离的位置; 弹簧部分，用于将固定电极固定部分和固定电极移动部分彼此连接，使得固定电极移动部分移动到基本上垂直于基板的板表面的方向; 远离所述基板的上部预定距离的可动电极，以与所述固定电极移动部分水平的预定间隔; 以及将晶片接合到固定电极移动部和可动电极中的一个的规定区域。

3. 发明申请

US20060010978A1 MEMS gyroscope having coupling springs 审中-公开
标题翻译：具有耦合弹簧的MEMS陀螺仪
公开(公告)号：US20060010978A1
公开(公告)日：2006-01-19
申请号：US11182774
申请日：2005-07-18
申请人： Sang-woo Lee , Byeung-leul Lee , Jong-pal Kim , Joon-hyock Choi
发明人： Sang-woo Lee , Byeung-leul Lee , Jong-pal Kim , Joon-hyock Choi
IPC分类号： G01P15/08
CPC分类号： G01C19/5747
摘要： A MEMS gyroscope with coupling springs and mass bodies symmetrical to one another and relatively movable in a vertical direction with respect to a substrate, where a coupling spring connects the mass bodies and moves the mass bodies in a vertical direction as another one of the mass bodies moves in the opposite vertical direction.
摘要翻译：一种具有耦合弹簧和质量体的MEMS陀螺仪，其彼此对称并且相对于基板在垂直方向上相对移动，其中耦合弹簧连接质量体并沿着垂直方向移动质量体，作为另一个质量体在相反的垂直方向移动。

4. 发明授权

US07714421B2 Small structure and method for fabricating the same 失效
标题翻译：小结构及其制造方法
公开(公告)号：US07714421B2
公开(公告)日：2010-05-11
申请号：US11192358
申请日：2005-07-29
申请人： Jong-pal Kim , Yong-chul Cho , Byeung-leul Lee , Sang-woo Lee , Joon-hyock Choi
发明人： Jong-pal Kim , Yong-chul Cho , Byeung-leul Lee , Sang-woo Lee , Joon-hyock Choi
IPC分类号： H01L23/02
CPC分类号： G01C19/5663 , G01P1/023 , G01P15/0802 , G02B26/0841 , H01L2224/48091 , H01L2224/48227 , H01L2924/01079 , H01L2924/00014
摘要： A small structure which uses bonding wires to prevent disturbance and provide support and a method of fabricating the same are provided. The small structure includes a floating body having a plurality of first contact pads, a base having a plurality of second contact pads, and a plurality of bonding wires electrically connecting the first and second contact pads and elastically supporting the floating body. The method of fabricating the small structure includes preparing a base, forming a sacrificial layer on the base, disposing a floating body on the sacrificial layer, connecting the base and the floating body with bonding wires, and removing the sacrificial layer. Thereby, fabrication costs of the small structure are reduced.
摘要翻译：提供了使用接合线来防止干扰并提供支撑的小结构及其制造方法。小结构包括具有多个第一接触焊盘的浮体，具有多个第二接触焊盘的基座，以及电连接第一和第二接触焊盘并弹性地支撑浮体的多个接合线。制造小结构的方法包括制备基底，在基底上形成牺牲层，在牺牲层上设置浮体，用接合线连接基底和浮体，以及去除牺牲层。因此，小结构的制造成本降低。

5. 发明申请

US20060023995A1 Vertical offset structure and method for fabricating the same 失效
标题翻译：垂直偏移结构及其制造方法
公开(公告)号：US20060023995A1
公开(公告)日：2006-02-02
申请号：US11183863
申请日：2005-07-19
申请人： Sang-woo Lee , Byeung-leul Lee , Jong-pal Kim , Joon-hyock Choi
发明人： Sang-woo Lee , Byeung-leul Lee , Jong-pal Kim , Joon-hyock Choi
IPC分类号： G02B6/26 , H01L21/30
CPC分类号： B81C1/00182 , B81B2201/0235 , B81C2203/0118 , G01P15/0802 , G01P15/125
摘要： A vertical offset structure and a method for fabricating the same. The vertical offset structure includes a substrate; a fixed electrode fixing portion formed on the substrate; a fixed electrode moving portion formed at a position away from an upper portion of the substrate by a predetermined distance; a spring portion for connecting the fixed electrode fixing portion and the fixed electrode moving portion to each other so that the fixed electrode moving portion moves into a direction substantially perpendicular to a plate surface of the substrate; a movable electrode located away from the upper portion of the substrate by a predetermined distance to have a predetermined interval horizontal to the fixed electrode moving portion; and a cap wafer bonded to a predetermined area of one of the fixed electrode moving portion and the movable electrode.
摘要翻译：垂直偏移结构及其制造方法。垂直偏移结构包括基板; 形成在所述基板上的固定电极固定部; 固定电极移动部，形成在远离所述基板上部预定距离的位置; 弹簧部分，用于将固定电极固定部分和固定电极移动部分彼此连接，使得固定电极移动部分移动到基本上垂直于基板的板表面的方向; 远离所述基板的上部预定距离的可动电极，以与所述固定电极移动部分水平的预定间隔; 以及将晶片接合到固定电极移动部和可动电极中的一个的规定区域。

6. 发明申请

US20060022322A1 Small structure and method for fabricating the same 失效
标题翻译：小结构及其制造方法
公开(公告)号：US20060022322A1
公开(公告)日：2006-02-02
申请号：US11192358
申请日：2005-07-29
申请人： Jong-pal Kim , Yong-chul Cho , Byeung-leul Lee , Sang-woo Lee , Joon-hyock Choi
发明人： Jong-pal Kim , Yong-chul Cho , Byeung-leul Lee , Sang-woo Lee , Joon-hyock Choi
IPC分类号： H01L23/02
CPC分类号： G01C19/5663 , G01P1/023 , G01P15/0802 , G02B26/0841 , H01L2224/48091 , H01L2224/48227 , H01L2924/01079 , H01L2924/00014
摘要： A small structure which uses bonding wires to prevent disturbance and provide support and a method of fabricating the same are provided. The small structure includes a floating body having a plurality of first contact pads, a base having a plurality of second contact pads, and a plurality of bonding wires electrically connecting the first and second contact pads and elastically supporting the floating body. The method of fabricating the small structure includes preparing a base, forming a sacrificial layer on the base, disposing a floating body on the sacrificial layer, connecting the base and the floating body with bonding wires, and removing the sacrificial layer. Thereby, fabrication costs of the small structure are reduced.
摘要翻译：提供了使用接合线来防止干扰并提供支撑的小结构及其制造方法。小结构包括具有多个第一接触焊盘的浮体，具有多个第二接触焊盘的基座，以及电连接第一和第二接触焊盘并弹性地支撑浮体的多个接合线。制造小结构的方法包括制备基底，在基底上形成牺牲层，在牺牲层上设置浮体，用接合线连接基底和浮体，以及去除牺牲层。因此，小结构的制造成本降低。

7. 发明授权

US06739189B2 Micro structure for vertical displacement detection and fabricating method thereof 失效
标题翻译：用于垂直位移检测的微结构及其制造方法
公开(公告)号：US06739189B2
公开(公告)日：2004-05-25
申请号：US10121666
申请日：2002-04-15
申请人： Byeung-leul Lee , Kyu-dong Jung , Sang-woo Lee , Yong-chul Cho
发明人： Byeung-leul Lee , Kyu-dong Jung , Sang-woo Lee , Yong-chul Cho
IPC分类号： G01P1500
CPC分类号： G01P15/18 , B81B2203/0136 , B81C1/0015 , B81C2201/0132 , G01C19/5755 , G01P15/125 , G01P2015/0814 , G01P2015/0831
摘要： Provided are a structure for detecting a vertical displacement and its manufacturing method. The structure for detecting a vertical displacement includes a body, an inertial mass floated over the body, a plurality of support beams extending from the inertial mass so as to suspend the inertial mass over the body, movable electrodes integrally formed with the inertial mass, and fixed electrodes floated over the body, each being positioned between the neighboring movable electrodes, wherein a vertical length of the movable electrode is different from a vertical length of the fixed electrode. Therefore, the structure and the electrodes can be simultaneously manufactured, thereby making the fabrication process simple. Also, it is possible to manufacture a three-axis accelerometer and a three-axis gyroscope on a single wafer by the same process, to be integrated as a six-axis inertial sensor.
摘要翻译：提供了用于检测垂直位移的结构及其制造方法。用于检测垂直位移的结构包括主体，悬挂在主体上的惯性质量，从惯性块延伸的多个支撑梁，以将惯性块悬挂在主体上，与惯性块一体形成的可动电极，以及固定电极浮在身体上，每个固定电极位于相邻的可移动电极之间，其中可移动电极的垂直长度不同于固定电极的垂直长度。因此，可以同时制造结构和电极，从而使制造工艺简单。另外，可以通过相同的工艺在单个晶片上制造三轴加速度计和三轴陀螺仪，作为六轴惯性传感器集成。

8. 发明授权

US07178397B2 Apparatus and method for driving MEMS structure and detecting motion of the driven MEMS structure using a single electrode 失效
标题翻译：用于驱动MEMS结构并使用单个电极检测所驱动的MEMS结构的运动的装置和方法
公开(公告)号：US07178397B2
公开(公告)日：2007-02-20
申请号：US11018830
申请日：2004-12-22
申请人： Sang-woo Lee , Jong-pal Kim , Byeung-leul Lee
发明人： Sang-woo Lee , Jong-pal Kim , Byeung-leul Lee
IPC分类号： G01P9/04 , G01P15/125
CPC分类号： G01C19/5776
摘要： Apparatus and a method for driving and detecting a motion of MEMS structure using single electrode. Apparatus includes a driving signal generation part driving MEMS structure; a motion detection part detecting motion of MEMS structure and outputting a motion current signal; an amplification part amplifying motion current signal and outputting a motion voltage signal; a gain adjustment part amplifying driving signal and outputting an amplified driving signal; a differential circuit part adding and subtracting with respect to signals output from the amplifying part and the gain adjustment part and outputting a motion signal without the driving signal; and a motion signal detection part selecting and outputting a motion signal of a predetermined frequency from the motion signal output from the differential circuit part. The variable capacitor is configured by a movable electrode plate integrally formed with MEMS structure and a fixed electrode plate disposed opposite to the movable electrode plate.
摘要翻译：使用单个电极驱动和检测MEMS结构的运动的装置和方法。装置包括驱动MEMS结构的驱动信号产生部分; 检测MEMS结构的运动并输出运动电流信号的运动检测部件; 放大部分放大运动电流信号并输出运动电压信号; 增益调整部分，放大驱动信号并输出放大的驱动信号; 差分电路部分相对于从放大部分和增益调整部分输出的信号相加和减去，并输出没有驱动信号的运动信号; 以及运动信号检测部分，从从差分电路部分输出的运动信号中选择并输出预定频率的运动信号。可变电容器由与MEMS结构一体形成的可动电极板和与可动电极板相对设置的固定电极板构成。

9. 发明申请

US20050266598A1 Method for fabricating vertical offset structure 失效
标题翻译：垂直偏移结构的制作方法
公开(公告)号：US20050266598A1
公开(公告)日：2005-12-01
申请号：US11134521
申请日：2005-05-23
申请人： Jong-pal Kim , Sang-woo Lee , Byeung-Leul Lee
发明人： Jong-pal Kim , Sang-woo Lee , Byeung-Leul Lee
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , G02B26/08 , H01L21/00
CPC分类号： B81C1/00626 , B81B2201/0235 , B81B2201/0242 , B81B2201/045 , B81B2203/0109 , B81B2203/0118 , B81C2201/014 , G01P15/0802 , G01P15/125 , G02B26/0841
摘要： A method for fabricating a vertical offset structure that forms a complete vertical offset on a wafer includes a first trench forming step of forming first trenches on a wafer; a first etching step of performing a first patterning for determining etching positions of second and third trenches by depositing a first thin film on the wafer, performing a second patterning for temporarily protecting the etching position of the third trench by depositing a second thin film on the first thin film and the wafer, and then forming the second trenches by etching the wafer; a second etching step of forming a protection layer on side surfaces of the second trenches and then vertically extending the second trenches by etching the wafer; a third etching step of removing the second thin film and then forming the third trench by etching a position from which the second thin film is removed; and a fourth etching step of horizontally extending the second trenches vertically extended at the second etching step and the third trench by etching the wafer.
摘要翻译：用于制造在晶片上形成完整的垂直偏移的垂直偏移结构的方法包括在晶片上形成第一沟槽的第一沟槽形成步骤; 第一蚀刻步骤，通过在晶片上沉积第一薄膜来执行用于确定第二和第三沟槽的蚀刻位置的第一图案化，执行用于暂时保护第三沟槽的蚀刻位置的第二图案化，第一薄膜和晶片，然后通过蚀刻晶片形成第二沟槽; 第二蚀刻步骤，在所述第二沟槽的侧表面上形成保护层，然后通过蚀刻所述晶片垂直延伸所述第二沟槽; 第三蚀刻步骤，通过蚀刻除去第二薄膜的位置来去除第二薄膜，然后形成第三沟槽; 以及第四蚀刻步骤，通过蚀刻晶片水平延伸在第二蚀刻步骤和第三沟槽处垂直延伸的第二沟槽。

10. 发明授权

US06796178B2 Rotation-type decoupled MEMS gyroscope 失效
标题翻译：旋转型解耦MEMS陀螺仪
公开(公告)号：US06796178B2
公开(公告)日：2004-09-28
申请号：US10359272
申请日：2003-02-06
申请人： Hee-moon Jeong , Jun-o Kim , Byeung-leul Lee , Sang-woo Lee
发明人： Hee-moon Jeong , Jun-o Kim , Byeung-leul Lee , Sang-woo Lee
IPC分类号： G01P904
CPC分类号： G01C19/5712
摘要： A rotation-type decoupled MEMS gyroscope including a drive body movable about the X-axis, a sensing body movable about the Z-axis, a medium body moving together with the drive body about the X-axis and the sensing body about the Z-axis. The drive body is fixed on a substrate by a first torsion spring torsion-deformed about the X-axis, and the medium body is connected to the drive body by a first bending spring bending-deformed about the Z-axis. The sensing body is connected to the medium body by a second torsion spring torsion-deformed about the X-axis and fixed to the substrate by a second bending spring bending-deformed about the Z-axis. If angular velocity is applied relative to the Y-axis while the drive body vibrates in a certain range about the X-axis by a driving electrode, the sensing body rotates about the Z-axis by the Coriolis force and a sensing electrode senses the rotation.
摘要翻译：旋转型解耦MEMS陀螺仪，其包括可围绕X轴移动的驱动体，围绕Z轴可移动的感测体，与驱动体一起围绕X轴移动的介质体和围绕Z轴的传感体，轴。驱动体通过围绕X轴扭转变形的第一扭转弹簧固定在基板上，并且介质体通过围绕Z轴弯曲变形的第一弯曲弹簧连接到驱动体。感测体通过围绕X轴扭转变形的第二扭转弹簧连接到介质主体，并通过围绕Z轴弯曲变形的第二弯曲弹簧固定到基板。如果驱动体通过驱动电极绕X轴在一定范围内振动，则相对于Y轴施加角速度，则感测体通过科里奥利力围绕Z轴旋转，感测电极感测旋转。

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