专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4320191A Pattern-forming process 失效
标题翻译：图案形成过程
公开(公告)号：US4320191A
公开(公告)日：1982-03-16
申请号：US201663
申请日：1980-07-07
申请人： Akira Yoshikawa , Osamu Ochi , Tomoko Hisaki , Yoshihiko Mizushima
发明人： Akira Yoshikawa , Osamu Ochi , Tomoko Hisaki , Yoshihiko Mizushima
IPC分类号： G03C5/56 , C23F4/00 , G03C1/705 , G03F1/00 , G03F1/54 , G03F7/004 , H01L21/027 , H01L21/311 , H01L21/314
CPC分类号： G03C1/705 , G03C5/56 , G03F1/00 , G03F7/0044 , H01L21/31116 , H01L21/314
摘要： This invention relates to a pattern-forming process using a radiation sensitive chalcogenide layer composed of a laminate of amorphous chalcogenide layer (2) and thin silver layer (3), and discloses a pattern-forming process characterized by etching out an amorphous chalcogenide layer (22) not doped with silver at an unexposed area under an irradiation of a light (6) or an accelerated corpuscular beam by a plasma etching with a fluorine-series gas and also a pattern-forming process wherein silver-doped amorphous chalcogenide layer (21) left on the substrate according to a given pattern by the above process is used as an etching mask and then the substrate layer (1c) is etched out by a plasma etching to form the given pattern on the substrate.
摘要翻译：本发明涉及一种使用由非晶硫族化物层（2）和薄银层（3）层压制成的辐射敏感硫族化物层的图案形成方法，并且公开了一种图案形成工艺，其特征在于蚀刻出非晶硫族化物层（ 22）通过用氟系气体的等离子体蚀刻在光（6）或加速粒子束的照射下在未曝光区域未掺杂银，以及其中银掺杂的非晶态硫族化物层（21）的图案形成工艺）用作蚀刻掩模，然后通过等离子体蚀刻蚀刻出衬底层（1c），以在衬底上形成给定的图案。

2. 发明授权

US4434224A Method of pattern formation 失效
标题翻译：图案形成方法
公开(公告)号：US4434224A
公开(公告)日：1984-02-28
申请号：US343908
申请日：1982-01-29
申请人： Akira Yoshikawa , Akitsu Takeda , Osamu Ochi , Tomoko Hisaki , Yoshihiko Mizushima
发明人： Akira Yoshikawa , Akitsu Takeda , Osamu Ochi , Tomoko Hisaki , Yoshihiko Mizushima
IPC分类号： H01L21/306 , G03F7/00 , H01L21/027 , H01L21/266 , H01L21/302 , H01L21/3065 , H01L21/314 , G03C5/00
CPC分类号： H01L21/314 , G03F7/0035 , H01L21/0271 , H01L21/266 , H01L21/302
摘要： In a method of pattern formation according to this invention, an organic polymer resist material is simultaneously used with an inorganic resist material, i.e., a first desired pattern consisting of the organic polymer resist material layer is formed on a substrate material, then the whole surface thereof is covered with the inorganic resist material layer, a second desired pattern is then formed with the inorganic resist material layer, and then the resulting second desired pattern is transferred to the organic polymer resist material. According to the invention, mask alignment can automatically be effected by detecting reflected light from an alignment mark on the substrate, formation of a relief including large and small patterns is also easily carried out, throughput can also be increased. The method of the invention may be combined with various process steps, so that such combined method is applicable for deep and shallow etching, formation of an interlayer insulation film, and lift-off method.
摘要翻译：在根据本发明的图案形成方法中，有机聚合物抗蚀剂材料与无机抗蚀剂材料同时使用，即，由有机聚合物抗蚀剂材料层组成的第一所需图案形成在基底材料上，然后整个表面用无机抗蚀剂材料层覆盖，然后用无机抗蚀剂材料层形成第二所需图案，然后将得到的第二所需图案转印到有机聚合物抗蚀剂材料上。根据本发明，通过检测来自基板上的对准标记的反射光可以自动实现掩模对准，也容易进行包括大小图案的浮雕的形成，也可以提高生产量。本发明的方法可以与各种工艺步骤组合，使得这种组合方法适用于深浅蚀刻，层间绝缘膜的形成和剥离方法。

3. 发明授权

US4350541A Doping from a photoresist layer 失效
标题翻译：从光致抗蚀剂层掺杂
公开(公告)号：US4350541A
公开(公告)日：1982-09-21
申请号：US174275
申请日：1980-07-31
申请人： Yoshihiko Mizushima , Akitsu Takeda , Akira Yoshikawa , Osamu Ochi , Tomoko Hisaki
发明人： Yoshihiko Mizushima , Akitsu Takeda , Akira Yoshikawa , Osamu Ochi , Tomoko Hisaki
IPC分类号： G03F7/004 , H01L21/314 , H01L21/225
CPC分类号： H01L21/314 , G03F7/0044 , Y10S438/93
摘要： A method for fabricating semiconductor devices comprising the steps of: forming on the main surface of a semiconductor substrate an inorganic photoresist layer having a first amorphous layer, which contains Se as a matrix component and includes an impurity for providing one conductivity type and a second silver, or a silver containing layer, formed on the first layer; exposing the inorganic photoresist layer with an exposure pattern; developing the exposed inorganic photoresist layer to form a patterned impurity containing inorganic photoresist layer as an impurity source layer; forming a heat resistive overcoating layer on the main surface of the semiconductor substrate, while covering the impurity source layer; and forming a doped region by diffusing impurity from the impurity source layer into a region of the substrate underlying the impurity source layer. The heat resistive overcoating layer may be an insulation layer having a window through which a conductive layer is connected to the doped region and is extended over the overcoating layer. The doped region is formed readily and accurately with relatively few process steps and with a pattern corresponding to an exposure pattern for the inorganic photoresist layer. The diffusion of the impurity from the impurity source layer into the substrate is accurately controlled so as to provide the doped region with a desired impurity concentration. Moreover, the evaporation of the impurity into the atmosphere during processing is minimized.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在半导体衬底的主表面上形成具有第一非晶层的无机光致抗蚀剂层，所述第一非晶层包含Se作为基质成分并且包括用于提供一种导电类型的杂质和第二银或含银层，形成在第一层上; 以曝光图案曝光无机光致抗蚀剂层; 显影曝光的无机光致抗蚀剂层以形成含有无机光致抗蚀剂层作为杂质源层的图案化杂质; 在半导体衬底的主表面上形成耐热性外涂层，同时覆盖杂质源层; 以及通过将杂质从杂质源层扩散到位于杂质源层下面的衬底的区域中而形成掺杂区域。耐热外涂层可以是具有窗口的绝缘层，导电层通过该窗口连接到掺杂区域并且在外涂层上延伸。通过相对较少的工艺步骤并且具有对应于无机光致抗蚀剂层的曝光图案的图案容易且准确地形成掺杂区域。将杂质从杂质源层扩散到衬底中被精确地控制，以便为掺杂区域提供所需的杂质浓度。此外，在处理期间将杂质蒸发到大气中被最小化。

4. 发明授权

US4127414A Pattern-forming materials having a radiation sensitive chalcogenide layer and a method of forming patterns with such materials 失效
标题翻译：具有辐射敏感硫族化物层的图案形成材料和用这种材料形成图案的方法
公开(公告)号：US4127414A
公开(公告)日：1978-11-28
申请号：US804659
申请日：1977-06-08
申请人： Akira Yoshikawa , Haruo Nagai , Osamu Ochi , Kazuko Nakano , Yoshihiko Mizushima
发明人： Akira Yoshikawa , Haruo Nagai , Osamu Ochi , Kazuko Nakano , Yoshihiko Mizushima
IPC分类号： G03F1/54 , G03F7/004 , G03C1/76 , G03C1/00 , G03C5/00
CPC分类号： G03F1/54 , G03F7/0044
摘要： A pattern-forming material comprises a substrate and a radiation sensitive chalcogenide layer disposed thereon. The radiation sensitive chalcogenide layer consists of an amorphous layer having a chemical composition of 75 to 95 mol% of selenium and 5 to 25 mol% of germanium and a silver layer superimposed thereon. The pattern-forming materials having the radiation sensitive chalcogenide layer of the invention are particularly useful in lithographic applications.
摘要翻译：图案形成材料包括基底和设置在其上的辐射敏感硫族化物层。辐射敏感性硫族化物层由化学组成为75〜95摩尔％硒和5〜25摩尔％的锗和叠加在其上的银层构成。具有本发明的辐射敏感硫族化物层的图案形成材料在光刻应用中特别有用。

5. 发明授权

US08809797B2 Scintillator for neutrons and neutron detector 有权
标题翻译：中子和中子探测器的闪烁体
公开(公告)号：US08809797B2
公开(公告)日：2014-08-19
申请号：US13885026
申请日：2011-12-15
申请人： Hisanori Yamane , Tetsuya Kawano , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota , Yutaka Fujimoto , Kentaro Fukuda , Noriaki Kawaguchi
发明人： Hisanori Yamane , Tetsuya Kawano , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota , Yutaka Fujimoto , Kentaro Fukuda , Noriaki Kawaguchi
IPC分类号： G01T3/06 , C04B35/01 , G21K4/00 , C09K11/63 , C09K11/57
CPC分类号： C09K11/57 , C04B35/01 , C04B2235/3203 , C04B2235/3206 , C04B2235/3241 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3409 , C04B2235/658 , C04B2235/76 , C04B2235/77 , C09K11/63 , G01T3/06 , G21K4/00
摘要： Provided is a scintillator for neutrons that allows the detection of neutrons with superb sensitivity and that is little affected by background noise derived from γ-rays, and a neutron detector that uses the neutron scintillator.The scintillator for neutrons comprises borate that contains at least Mg and a divalent transition element.
摘要翻译：提供了一种用于中子的闪烁体，其允许以极高的灵敏度检测中子，并且几乎不受来自γ射线的背景噪声的影响，以及使用中子闪烁体的中子检测器。用于中子的闪烁体包括含有至少Mg和二价过渡元素的硼酸盐。

6. 发明申请

US20140021355A1 SCINTILLATOR, RADIATION DETECTOR, AND METHOD FOR DETECTING RADIATION 有权
标题翻译：扫描仪，辐射检测器和检测辐射的方法
公开(公告)号：US20140021355A1
公开(公告)日：2014-01-23
申请号：US14009047
申请日：2012-04-02
申请人： Kentaro Fukuda , Noriaki Kawaguchi , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota
发明人： Kentaro Fukuda , Noriaki Kawaguchi , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota
IPC分类号： C09K11/77 , G01T3/06 , G01T1/202
CPC分类号： C09K11/7733 , C09K11/772 , C09K11/7732 , G01T1/2023 , G01T3/06 , G21K4/00
摘要： The present invention aims at providing a scintillator for high temperature environments which has satisfactory light emission characteristics under high temperature environments; and a method for measuring radiation under high temperature environments. The scintillator for high temperature environments comprises a colquiriite-type crystal represented by the chemical formula LiM1M2X6 (where M1 is at least one alkaline earth metal element selected from Mg, Ca, Sr and Ba, M2 is at least one metal element selected from Al, Ga and Sc, and X is at least one halogen element selected from F, Cl, Br and I), for example, typified by LiCaAlF6, and the crystal optionally containing a lanthanoid element such as Ce or Eu. The method for measuring radiation under high temperature environments uses the scintillator.
摘要翻译：本发明旨在提供一种在高温环境下具有令人满意的发光特性的高温环境的闪烁体; 以及在高温环境下测量辐射的方法。用于高温环境的闪烁体包括由化学式LiM1M2X6（其中M1是选自Mg，Ca，Sr和Ba中的至少一种碱土金属元素）表示的立次菱形晶体，M2是选自Al， Ga和Sc，X是选自F，Cl，Br和I中的至少一种卤素元素），例如以LiCaAlF 6为代表的晶体，以及任选地含有镧系元素如Ce或Eu的晶体。在高温环境下测量辐射的方法使用闪烁体。

7. 发明授权

US08044367B2 Scintillator for neutron detection and neutron detector 有权
标题翻译：用于中子检测和中子检测器的闪烁体
公开(公告)号：US08044367B2
公开(公告)日：2011-10-25
申请号：US12866863
申请日：2009-03-17
申请人： Akira Yoshikawa , Takayuki Yanagida , Kentaro Fukuda , Sumito Ishizu , Noriaki Kawaguchi , Toshihisa Suyama
发明人： Akira Yoshikawa , Takayuki Yanagida , Kentaro Fukuda , Sumito Ishizu , Noriaki Kawaguchi , Toshihisa Suyama
IPC分类号： G01T3/06
CPC分类号： G01T3/06 , C09K11/645 , G21K4/00
摘要： A scintillator for neutron detection, comprising a metal fluoride crystal containing, as constituent elements, a metal having a valence of 2 or higher, such as calcium, aluminum or yttrium; lithium; and fluorine, the metal fluoride crystal containing 1.1 to 20 atoms per unit volume (atoms/nm3) of 6Li, having an effective atomic number of 10 to 40, containing a lanthanoid such as cerium, praseodymium or europium, and being represented by, for instance, LiCaAlF6, LiSrAlF6 and LiYF4. The scintillator for neutron detection has high sensitivity to neutron rays, and is reduced in a background noise attributed to γ rays.
摘要翻译：一种用于中子检测的闪烁体，其包含金属氟化物晶体，其含有价态为2以上的金属如钙，铝或钇作为构成元素; 锂; 和氟，含有每单位体积（原子/ nm 3）为1〜20个原子的6Li的金属氟化物结晶，其有效原子序数为10〜40，含有镧系元素，例如铈，镨或铕，由 LiCaAlF6，LiSrAlF6和LiYF4。用于中子检测的闪烁体对中子射线具有高灵敏度，并且在归因于γ射线的背景噪声中降低。

8. 发明授权

US07480218B2 Optical disk control device with focal point movement control 有权
标题翻译：具有焦点运动控制的光盘控制装置
公开(公告)号：US07480218B2
公开(公告)日：2009-01-20
申请号：US10553616
申请日：2004-04-16
申请人： Akira Yoshikawa , Shin-ichi Yamada
发明人： Akira Yoshikawa , Shin-ichi Yamada
IPC分类号： G11B7/09
CPC分类号： G11B7/08511 , G11B2007/0013
摘要： The present invention provides an optical disk control device that can perform focus pulling in a short time for a target information surface of an optical disk having a plurality of information surfaces. An objective lens (23) is moved toward an optical disk (1) having a plurality of information surfaces (1A, 1B) by the output signal of a driving signal generating circuit (42B), passage of an initial focused focal position is detected by a focal point passage detecting circuit (44), and when the objective lens moves past that position only a predetermined amount closer to the optical disk, an n-rotation delay circuit (70) outputs a reversal instruction f. After changing directions and moving the objective lens away from the optical disk, a focus pulling-in circuit (32B) switches a signal “a” that is output to an actuator driving circuit (21) from the output signal of the driving signal generating circuit to the output signal of the control circuit, activates a control circuit and performs focus pulling-in.
摘要翻译：本发明提供一种光盘控制装置，其可以在具有多个信息表面的光盘的目标信息表面上在短时间内执行聚焦拉动。物镜（23）通过驱动信号发生电路（42B）的输出信号向具有多个信息表面（1A，1B）的光盘（1）移动，初始聚焦焦点位置的通过被焦点通过检测电路（44），并且当物镜仅靠近光盘的预定量移动超过该位置时，n旋转延迟电路（70）输出反转指令f。在改变方向并将物镜移动离开光盘之后，聚焦拉入电路（32B）从驱动信号发生电路的输出信号切换输出到致动器驱动电路（21）的信号“a” 到控制电路的输出信号，激活控制电路并进行聚焦拉入。

9. 发明申请

US20090016196A1 OPTICAL DISC DEVICE AND METHOD FOR CONTROLLING OPTICAL DISC DEVICE 有权
标题翻译：光盘装置及控制光盘装置的方法
公开(公告)号：US20090016196A1
公开(公告)日：2009-01-15
申请号：US11909379
申请日：2006-03-20
申请人： Hideki Aikoh , Makoto Takashima , Takao Hayashi , Akira Yoshikawa , Tomio Yamamoto , Kouretsu Boku
发明人： Hideki Aikoh , Makoto Takashima , Takao Hayashi , Akira Yoshikawa , Tomio Yamamoto , Kouretsu Boku
IPC分类号： G11B7/00
CPC分类号： G11B33/1446 , G11B7/121 , G11B17/0282
摘要： An optical disk device of the present application includes: a turntable 30 including plural induction grooves 31a to 31h as concave portions radially extending from vicinity of a center of the turntable 30 and having open portions in an outer periphery of the turntable 30 and plural through-holes 32a to 32h penetrating bottom faces 33a to 33h on the vicinity of the center side of the plural induction grooves 31a to 31h and a top face of the turntable 30; and an outer rotor type spindle motor 35 provided with plural fins 36a to 36h as convex portions on a rotor on a side face thereof. The optical disk device of the present application utilizes an airflow generated by rotation of the rotor of the spindle motor 35 and the turntable 30 in conjunction therewith as a dust removing wind for removing dust attaching to an objective lens side area.
摘要翻译：本申请的光盘装置包括：转盘30，其具有作为从转盘30的中心附近径向延伸的凹部的多个感应槽31a〜31h，在转台30的外周具有开口部，在多个感应槽31a〜31h的中心侧附近的底面33a〜33h以及转台30的上表面的贯通孔32a〜32h的孔32a〜以及外转子型主轴电动机35，在其侧面的转子上设置有作为凸部的多个翅片36a〜36h。本申请的光盘装置利用由主轴电机35的转子和转盘30的旋转而产生的气流作为除尘附着到物镜侧区域的除尘风。

10. 发明申请

US20070193499A1 Zno single crystal as super high speed scintillator... 审中-公开
标题翻译： Zno单晶作为超高速闪烁体
公开(公告)号：US20070193499A1
公开(公告)日：2007-08-23
申请号：US11569350
申请日：2005-05-20
申请人： Tsuguo Fukuda , Akira Yoshikawa , Hiraku Ogino
发明人： Tsuguo Fukuda , Akira Yoshikawa , Hiraku Ogino
IPC分类号： H01L21/322
CPC分类号： G21K4/00 , C09K11/565 , C09K11/595 , C09K11/623 , C09K11/642 , C09K11/662 , C09K11/7702 , C30B29/16 , C30B33/00
摘要： To find out a crystalline material for a high speed scintillator in place of BaF2 and the like, and a method for producing the material at a low cost. A single crystal of (Zn1−xMx)O1+x (M: Al, Ga, In, Y, Sc, La, Gd, Lu) (x=0 to 0.0500), (Zn1−xM′x)O1+2x(M′: Si, Ge, Sn, Pb)(x=0 to 0.0250) or (Zn1−xCdx)O (x=0 to 0.0500) is used as a scintillator. Defects of a ZnO single crystal can be reduced by using a platinum inner cylinder in order for a solution not to directly contact with an autoclave, for reducing impurities in the ZnO single crystal and precluding impurities interfering with scintillation, and by using LiOH and KOH as a mineralizer. ZnO can be doped with Al2O3, Ga2O3, In2O3, Si, Cd or the like by adding those materials to a starting material for the hydrothermal synthesis. The doping amounts can be controlled by changing charging amounts thereof. The doping of those elements inhibits the emission of visible lights, which results in the efficient transformation of the excitation energy to the luminescence from a free exciton.
摘要翻译：找出代替BaF 2等的高速闪烁体的结晶材料，以及低成本地制造材料的方法。（Zn 1-x M x O）O 1 + x（M：Al，Ga，In，Y，Sc， La，Gd，Lu）（x = 0〜0.0500），（Zn 1-x M'x X）O 1 + 2x（M 使用Si，Ge，Sn，Pb）（x = 0〜0.0250）或（Zn 1-x S x x x）O（x = 0〜0.0500）作为闪烁体。可以通过使用铂内筒来降低ZnO单晶的缺陷，以使溶液不与高压釜直接接触，以减少ZnO单晶中的杂质并排除杂质干扰闪烁，并且通过使用LiOH和KOH作为矿化剂 ZnO可以掺杂有Al 2 O 3，Ga 2 O 3 3，In 2 O 3，通过将这些材料加入到用于水热合成的起始材料中，将其加入到Si 3 O 3，Si 3，Cd 3等中。可以通过改变其充电量来控制掺杂量。这些元素的掺杂抑制可见光的发射，这导致激发能量有效地从游离激子转变为发光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式