专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07468792B2 Evaluation apparatus and evaluation method 失效
标题翻译：评价装置及评价方法
公开(公告)号：US07468792B2
公开(公告)日：2008-12-23
申请号：US11959810
申请日：2007-12-19
申请人： Yuichi Masaki , Yutaka Akino
发明人： Yuichi Masaki , Yutaka Akino
IPC分类号： G01J4/00 , G01B9/02
CPC分类号： G01N21/31 , G01J3/2823 , G01N21/55
摘要： An evaluation apparatus which evaluates a sample. The apparatus includes a light source which irradiates the sample with light, an imaging spectrometer which spectroscopically measures light reflected by the sample and senses an image, a first calculator which obtains amplitude information on an amplitude of a spectral reflectance of the sample based on the image sensed by the imaging spectrometer within a predetermined wavelength range of spectral reflectance spectra obtained by the spectrometer, a memory which holds in advance relationship information representing a relationship between the amplitude information of the spectral reflectance and an absorption coefficient, and a second calculator which obtains an absorption coefficient of the sample based on the amplitude information obtained by the first calculator and the relationship information held in the memory.
摘要翻译：评价试样的评价装置。该装置包括用光照射样品的光源，光谱测量由样品反射的光并感测图像的成像光谱仪，基于图像获取样品的光谱反射率的振幅信息的第一计算器由成像光谱仪在由光谱仪获得的光谱反射光谱的预定波长范围内感测到的存储器，该存储器保持表示光谱反射率的振幅信息与吸收系数之间的关系的预先关系信息，以及第二计算器，基于由第一计算器获得的振幅信息和保存在存储器中的关系信息的样本的吸收系数。

2. 发明授权

US5952694A Semiconductor device made using processing from both sides of a workpiece 失效
标题翻译：半导体器件使用从工件的两侧进行处理
公开(公告)号：US5952694A
公开(公告)日：1999-09-14
申请号：US403580
申请日：1995-03-14
申请人： Mamoru Miyawaki , Yasushi Kawasumi , Shunsuke Inoue , Yutaka Akino , Toru Koizumi , Tetsunobu Kohchi
发明人： Mamoru Miyawaki , Yasushi Kawasumi , Shunsuke Inoue , Yutaka Akino , Toru Koizumi , Tetsunobu Kohchi
IPC分类号： H01L21/20 , H01L21/322 , H01L21/762 , H01L23/544 , H01L27/092 , H01L27/12 , H01L27/01 , H01L27/082 , H01L31/0392
CPC分类号： H01L21/3226 , H01L21/2007 , H01L21/76264 , H01L23/544 , H01L27/1203 , H01L21/76275 , H01L21/76281 , H01L21/76283 , H01L21/76286 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L27/092 , H01L2924/0002
摘要： A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.
摘要翻译：具有形成在具有绝缘表面的基板上的半导体层的半导体器件包括通过从其主表面处理半导体层形成的第一区域和通过从另一个主表面处理半导体层而形成的第二区域，第一区域和构成半导体功能元件，隔离区域等的第二区域。

3. 发明授权

US5376231A Substrate for recording head, recording head and method for producing same 失效
标题翻译：记录头基板，记录头及其制造方法
公开(公告)号：US5376231A
公开(公告)日：1994-12-27
申请号：US871188
申请日：1992-04-20
申请人： Shigeyuki Matsumoto , Yasuhiro Naruse , Genzo Monma , Kei Fujita , Seiji Kamei , Yutaka Akino , Yasuhiro Sekine , Yukihiro Hayakawa
发明人： Shigeyuki Matsumoto , Yasuhiro Naruse , Genzo Monma , Kei Fujita , Seiji Kamei , Yutaka Akino , Yasuhiro Sekine , Yukihiro Hayakawa
IPC分类号： B41J2/14 , B41J2/16 , H01L21/321 , H01L21/3213 , H01L21/306 , B44C1/22 , C23F1/00
CPC分类号： B41J2/1629 , B41J2/14129 , B41J2/1604 , B41J2/1628 , B41J2/1631 , B41J2/164 , B41J2/1642 , H01L21/321 , H01L21/32134 , B41J2202/03 , B41J2202/13
摘要： A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.
摘要翻译：一种用于制造用于记录头的基板的方法，其中多个电热转换元件，用于分别驱动电热转换元件的多个驱动功能元件和用于分别连接每个驱动功能元件的多个布线电极并且每个电热转换元件通过光刻形成在支撑构件上，包括通过蚀刻用于布线电极的材料层来形成布线电极，同时蚀刻去除用于掩蔽布线电极的材料层的光致抗蚀剂。

4. 发明申请

US20080100838A1 EVALUATION APPARATUS AND EVALUATION METHOD 失效
标题翻译：评价设备和评估方法
公开(公告)号：US20080100838A1
公开(公告)日：2008-05-01
申请号：US11959810
申请日：2007-12-19
申请人： Yuichi Masaki , Yutaka Akino
发明人： Yuichi Masaki , Yutaka Akino
IPC分类号： G01J3/28
CPC分类号： G01N21/31 , G01J3/2823 , G01N21/55
摘要： An evaluation apparatus which evaluates a sample. The apparatus includes a light source which irradiates the sample with light, an imaging spectrometer which spectroscopically measures light reflected by the sample and senses an image, a first calculator which obtains amplitude information on an amplitude of a spectral reflectance of the sample based on the image sensed by the imaging spectrometer within a predetermined wavelength range of spectral reflectance spectra obtained by the spectrometer, a memory which holds in advance relationship information representing a relationship between the amplitude information of the spectral reflectance and an absorption coefficient, and a second calculator which obtains an absorption coefficient of the sample based on the amplitude information obtained by the first calculator and the relationship information held in the memory.
摘要翻译：评价试样的评价装置。该装置包括用光照射样品的光源，光谱测量由样品反射的光并感测图像的成像光谱仪，基于图像获取样品的光谱反射率的振幅信息的第一计算器由成像光谱仪在由光谱仪获得的光谱反射光谱的预定波长范围内感测到的存储器，该存储器保持表示光谱反射率的振幅信息与吸收系数之间的关系的预先关系信息，以及第二计算器，基于由第一计算器获得的振幅信息和保存在存储器中的关系信息的样本的吸收系数。

5. 发明授权

US06417108B1 Semiconductor substrate and method of manufacturing the same 有权
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06417108B1
公开(公告)日：2002-07-09
申请号：US09238571
申请日：1999-01-28
申请人： Yutaka Akino , Tadashi Atoji
发明人： Yutaka Akino , Tadashi Atoji
IPC分类号： H01L21302
CPC分类号： H01L21/7624 , H01L21/2007 , H01L21/76251 , Y10T156/10 , Y10T156/1043 , Y10T156/1052
摘要： A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral extremity of the insulation layer to be located between the outer peripheral extremity of the semiconductor layer and that of the support member and hence the semiconductor layer and the insulation layer produce a stepped profile.
摘要翻译：制造半导体衬底的方法可以通过去除半导体衬底的外围部分来有效地防止在绝缘层和半导体的一部分中产生碎屑现象和碎屑的产生，从而使绝缘层的外周末端位于半导体层的外周末端和支撑部件的外周末端之间，因此半导体层和绝缘层产生阶梯状。

6. 发明授权

US6070968A Ink jet cartridge and apparatus having a substrate with grooves which contain heat generating elements 失效
标题翻译：具有具有包含发热元件的凹槽的基板的喷墨墨盒和设备
公开(公告)号：US6070968A
公开(公告)日：2000-06-06
申请号：US361048
申请日：1994-12-21
申请人： Yutaka Akino , Kenji Makino , Akira Okita , Seiichi Tamura
发明人： Yutaka Akino , Kenji Makino , Akira Okita , Seiichi Tamura
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16 , H01L21/822 , H01L27/04
CPC分类号： B41J2/14072 , B41J2/14129 , B41J2002/14379 , B41J2202/13
摘要： An object of the present invention is to provide an ink jet recording head and an apparatus using the same, wherein electrothermal conversion element for thermally emitting a recording ink is provided at a side of a substrate on which the head structure is formed, thereby reducing a loss in the thermal energy.
摘要翻译：本发明的目的是提供一种喷墨记录头及其使用方法，其中用于热释放记录油墨的电热转换元件设置在其上形成有头结构的基板的一侧，从而减少了热能损失。

7. 发明授权

US5963812A Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion 失效
标题翻译：在侧壁部分具有给电子表面的半导体装置的制造方法
公开(公告)号：US5963812A
公开(公告)日：1999-10-05
申请号：US814016
申请日：1997-03-10
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/336
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

8. 发明授权

US5580808A Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam 失效
标题翻译：制造具有用氢原子和能量束处理的接触孔的ROM器件的方法
公开(公告)号：US5580808A
公开(公告)日：1996-12-03
申请号：US327799
申请日：1994-10-24
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/265
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.
摘要翻译：一种通过首先在半导体内形成接触孔来制造掩模ROM的方法。然后施加表面处理以将氢原子供给到半导体的表面。用能量束选择性地照射接触孔，以产生照射的接触孔和未照射的接触孔。在未经照射的接触孔中，形成导电或半导体薄膜，并在导电或半导体薄膜上形成电路。电路和未照射的孔彼此连接，并且照射的孔和电路彼此绝缘。

9. 发明授权

US07245002B2 Semiconductor substrate having a stepped profile 有权
标题翻译：具有阶梯形轮廓的半导体衬底
公开(公告)号：US07245002B2
公开(公告)日：2007-07-17
申请号：US10143015
申请日：2002-05-13
申请人： Yutaka Akino , Tadashi Atoji
发明人： Yutaka Akino , Tadashi Atoji
IPC分类号： H01L29/06 , H01L27/01
CPC分类号： H01L21/7624 , H01L21/2007 , H01L21/76251 , Y10T156/10 , Y10T156/1043 , Y10T156/1052
摘要： A semiconductor substrate which effectively prevents a chipping phenomenon, wherein the outer peripheral extremity of the insulation layer is located between the outer peripheral extremity of the semiconductor layer and the outer peripheral extremity of the support member, and wherein the semiconductor layer and the insulation layer produce a stepped profile.
摘要翻译：一种有效地防止切屑现象的半导体衬底，其中绝缘层的外周末端位于半导体层的外周末端和支撑构件的外周末端之间，并且其中半导体层和绝缘层产生一个阶梯轮廓。

10. 发明授权

US06329265B1 Method of making a semiconductor device using processing from both sides of a workpiece 失效
标题翻译：使用从工件的两侧进行处理的半导体器件的制造方法
公开(公告)号：US06329265B1
公开(公告)日：2001-12-11
申请号：US09305486
申请日：1999-05-06
申请人： Mamoru Miyawaki , Yasushi Kawasumi , Shunsuke Inoue , Yutaka Akino , Toru Koizumi , Tetsunobu Kohchi
发明人： Mamoru Miyawaki , Yasushi Kawasumi , Shunsuke Inoue , Yutaka Akino , Toru Koizumi , Tetsunobu Kohchi
IPC分类号： H01L2130
CPC分类号： H01L21/3226 , H01L21/2007 , H01L21/76264 , H01L21/76275 , H01L21/76281 , H01L21/76283 , H01L21/76286 , H01L23/544 , H01L27/092 , H01L27/1203 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.
摘要翻译：具有形成在具有绝缘表面的基板上的半导体层的半导体器件包括通过从其主表面处理半导体层形成的第一区域和通过从另一个主表面处理半导体层而形成的第二区域，第一区域和构成半导体功能元件，隔离区域等的第二区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式