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1. 发明授权

US09082789B2 Fabrication methods of integrated semiconductor structure 有权
标题翻译：集成半导体结构的制作方法
公开(公告)号：US09082789B2
公开(公告)日：2015-07-14
申请号：US13107636
申请日：2011-05-13
申请人： Chun-Hung Huang , Yu-Hsien Lin , Ming-Yi Lin , Jyh-Huei Chen
发明人： Chun-Hung Huang , Yu-Hsien Lin , Ming-Yi Lin , Jyh-Huei Chen
IPC分类号： H01L21/8234 , H01L29/66 , H01L21/8238 , H01L29/165 , H01L29/78 , H01L21/28 , H01L29/49 , H01L29/51
CPC分类号： H01L29/66545 , H01L21/28185 , H01L21/28202 , H01L21/823842 , H01L21/823857 , H01L29/165 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要： An integrated circuit device and method for manufacturing an integrated circuit device is disclosed. The integrated circuit device comprises a core device and an input/output circuit. Each of the core device and input/output circuit includes a PMOS structure and an NMOS structure. Each of the PMOS includes a p-type metallic work function layer over a high-k dielectric layer, and each of the NMOS structure includes an n-type metallic work function layer over a high-k dielectric layer. There is an oxide layer under the high-k dielectric layer in the input/output circuit.
摘要翻译：公开了一种用于制造集成电路器件的集成电路器件和方法。集成电路装置包括核心装置和输入/输出电路。核心器件和输入/输出电路中的每一个包括PMOS结构和NMOS结构。每个PMOS包括在高k电介质层上的p型金属功函数层，并且每个NMOS结构包括在高k电介质层上的n型金属功函数层。在输入/输出电路中的高k电介质层下方有氧化层。

2. 发明申请

US20120013223A1 MICRO ELECTRIC GENERATOR, METHOD OF PROVIDING THE SAME, AND ELECTRIC GENERATING DEVICE 有权
标题翻译：微电力发电机及其制造方法以及电力发电装置
公开(公告)号：US20120013223A1
公开(公告)日：2012-01-19
申请号：US12907437
申请日：2010-10-19
申请人： Wen-Kuang HSU , Hsin-Fu KUO , Chia-Jung HU , Yu-Hsien LIN
发明人： Wen-Kuang HSU , Hsin-Fu KUO , Chia-Jung HU , Yu-Hsien LIN
IPC分类号： H02N2/18 , H01L41/00
CPC分类号： H01L41/1134 , H01L41/316 , Y10S310/80
摘要： A micro electric generator is disclosed, which comprises: at least one electrically conductive fiber, and at least one piezoelectric ceramic layer covering on the surface of that at least one electrically conductive fiber. When a mechanical force is applied to deform the electrically conductive fiber covered with the piezoelectric ceramic layer, electric energy is generated. Also, a method of fabricating the said micro electric generator and an electric generating device are disclosed.
摘要翻译：公开了一种微型发电机，其包括：至少一个导电纤维，以及覆盖在该至少一个导电纤维的表面上的至少一个压电陶瓷层。当施加机械力使得被压电陶瓷层覆盖的导电纤维变形时，产生电能。另外，公开了一种制造所述微型发电机和发电装置的方法。

3. 发明授权

US08051899B2 Heat dissipating module and heat sink thereof 有权
标题翻译：散热模块及其散热器
公开(公告)号：US08051899B2
公开(公告)日：2011-11-08
申请号：US11979807
申请日：2007-11-08
申请人： Chin-Ming Chen , Yu-Hung Huang , Yu-Hsien Lin
发明人： Chin-Ming Chen , Yu-Hung Huang , Yu-Hsien Lin
IPC分类号： F28D15/00 , H05K7/20
CPC分类号： H01L23/467 , H01L2924/0002 , H01L2924/00
摘要： A heat dissipating module includes a fan and a heat sink. The heat sink comprises a body and at least one movable member. The body comprises a plurality of fins, at least one first slot and at least one second slot. The first and second slots are integrally formed on the body as a single piece. The movable member, rotatably or movably coupled to the first slot, comprises a pivoting portion, an operating portion, a jointing portion and at least one fixing portion. The pivoting portion is rotatably or movably received in the first slot. A first end of the operating portion connects to the pivoting portion, rotating or moving the pivoting portion. The jointing portion, at a second end of the operating portion, selectively connects to or separates from the second slot. The fixing portion protrudes from the pivoting portion, abutting and securing the fan to the heat sink.
摘要翻译：散热模块包括风扇和散热器。散热器包括主体和至少一个可动构件。主体包括多个翅片，至少一个第一狭槽和至少一个第二狭槽。第一和第二槽一体地形成在主体上作为单件。可移动或可移动地联接到第一槽的可动构件包括枢转部分，操作部分，接合部分和至少一个固定部分。枢转部分可旋转地或可移动地容纳在第一槽中。操作部分的第一端连接到枢转部分，旋转或移动枢转部分。在操作部分的第二端处的接合部分选择性地连接到第二槽或从第二槽分离。固定部从枢转部突出，将风扇抵接并固定到散热器。

4. 发明授权

US07999446B1 Piezoelectronic device and method of fabricating the same 有权
标题翻译：压电器件及其制造方法
公开(公告)号：US07999446B1
公开(公告)日：2011-08-16
申请号：US12662021
申请日：2010-03-29
申请人： Wen-Kuang Hsu , Hsin-Fu Kuo , Yu-Hsien Lin , Chiung-Wen Tang , Chieh-Lien Lu , Yao-Cheng Lai
发明人： Wen-Kuang Hsu , Hsin-Fu Kuo , Yu-Hsien Lin , Chiung-Wen Tang , Chieh-Lien Lu , Yao-Cheng Lai
IPC分类号： H01L41/08
CPC分类号： H02N2/18 , H01L41/081 , H01L41/1136 , H01L41/316
摘要： A piezoelectronic device and a method of fabricating the same are disclosed. The piezoelectronic device of the present invention comprises: a plurality of carbon nanotubes; at least one piezoceramic layer covering the plurality of carbon nanotubes; and a supporting material for supporting the carbon nanotubes and disposed between the carbon nanotubes, the supporting layer being coated with at least one piezoceramic layer, wherein the plurality of carbon nanotubes is arranged in a comb-shape. The piezoelectronic device of the present invention is advantageous in having excellent elasticity (durability) and excellent piezoelectronical property. The induced current obtained from the piezoelectronic device of the present invention is about 1.5 μA or above as well as induced voltage being over 1V when the size of the piezoelectronic block is 2.5 mm×1 mm×1 mm (length×width×height).
摘要翻译：公开了一种压电装置及其制造方法。本发明的压电装置包括：多个碳纳米管; 覆盖所述多个碳纳米管的至少一个压电陶瓷层; 以及用于支撑所述碳纳米管并且设置在所述碳纳米管之间的支撑材料，所述支撑层被涂覆有至少一个压电陶瓷层，其中所述多个碳纳米管被布置为梳状。本发明的压电元件具有优异的弹性（耐久性）和优异的压电特性。当压电电极块的尺寸为2.5mm×1mm×1mm（长×宽×高））时，从本发明的压电装置获得的感应电流为约1.5μA以上，感应电压为1V以上。

5. 发明授权

US07967577B2 Fan assembly and fastening structure thereof 有权
标题翻译：风扇组件及其紧固结构
公开(公告)号：US07967577B2
公开(公告)日：2011-06-28
申请号：US11708317
申请日：2007-02-21
申请人： Chin-Ming Chen , Yu-Hsien Lin , Cheng-Chih Lee
发明人： Chin-Ming Chen , Yu-Hsien Lin , Cheng-Chih Lee
IPC分类号： F04B17/03 , H05K7/20
CPC分类号： H05K7/20172
摘要： A fastening structure for a fan has a frame which includes a fastening member having a vertical portion fixed to the frame, and an extending portion extending towards the interior of the frame and having a protrusion, where when the fan is assembled with the fastening structure, the fan is rotated along an axle thereof to closely fit the protrusion in an hole of the outer frame of the fan so that the fan can be fixed on the frame.
摘要翻译：用于风扇的紧固结构具有框架，该框架包括具有固定到框架的垂直部分的紧固构件和朝向框架内部延伸并具有突出部的延伸部分，当风扇与紧固结构组装时，风扇沿其轴线旋转以将突起紧密地配合到风扇的外框架的孔中，使得风扇可以固定在框架上。

6. 发明授权

US07352577B2 Liquid-cooled heat dissipation module 有权
标题翻译：液冷散热模块
公开(公告)号：US07352577B2
公开(公告)日：2008-04-01
申请号：US11185862
申请日：2005-07-21
申请人： Lee-Long Chen , Chien-Hsiung Huang , Yu-Hsien Lin , Wen-Shi Huang , Chin-Ming Chen
发明人： Lee-Long Chen , Chien-Hsiung Huang , Yu-Hsien Lin , Wen-Shi Huang , Chin-Ming Chen
IPC分类号： H05K7/20
CPC分类号： F28F3/12 , F28D7/026 , F28D2021/0031 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： A liquid-cooled heat dissipation module for circularly dissipating heat from a heat source. The liquid-cooled heat dissipation module includes a fan having a base; a pump disposed on the base; a heat sink coupled to the fan and having an opening to receive the pump; and a guide part disposed in the opening of the heat sink, communicated to the pump and having an outer surface, a through hole and a guide passage formed on the outer surface. The pump drives a working fluid in the liquid-cooled heat dissipation module to pass through the through hole, the pump and the guide passage to circularly dissipate heat.
摘要翻译：一种用于从热源循环散热的液冷式散热模块。液冷散热模块包括：具有底座的风扇; 设置在基座上的泵; 耦合到所述风扇并具有用于接收所述泵的开口的散热器; 以及引导部，其设置在所述散热器的所述开口中，连通到所述泵并具有形成在所述外表面上的外表面，通孔和引导通道。泵驱动液冷散热模块中的工作流体通过通孔，泵和引导通道，以循环散热。

7. 发明授权

US09595477B2 Semiconductor device including an epitaxy region 有权
标题翻译：包括外延区域的半导体器件
公开(公告)号：US09595477B2
公开(公告)日：2017-03-14
申请号：US13010028
申请日：2011-01-20
申请人： Te-Jen Pan , Yu-Hsien Lin , Hsiang-Ku Shen , Wei-Han Fan , Yun Jing Lin , Yimin Huang , Tzu-Chung Wang
发明人： Te-Jen Pan , Yu-Hsien Lin , Hsiang-Ku Shen , Wei-Han Fan , Yun Jing Lin , Yimin Huang , Tzu-Chung Wang
IPC分类号： H01L21/4763 , H01L21/8238 , H01L29/165 , H01L29/66 , H01L29/78
CPC分类号： H01L29/7833 , H01L21/823807 , H01L21/823814 , H01L21/823828 , H01L21/823864 , H01L21/823871 , H01L29/04 , H01L29/0649 , H01L29/165 , H01L29/6653 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A method is described which includes providing a substrate and forming a first spacer material layer abutting a gate structure on the substrate. A second spacer material layer is formed adjacent and abutting the gate structure and overlying the first spacer material layer. The first spacer material layer and the second spacer material layer are then etched concurrently to form first and second spacers, respectively. An epitaxy region is formed (e.g., grown) on the substrate which includes an interface with each of the first and second spacers. The second spacer may be subsequently removed and the first spacer remain on the device decreases the aspect ratio for an ILD gap fill. An example composition of the first spacer is SiCN.
摘要翻译：描述了一种方法，其包括提供衬底并形成邻接衬底上的栅极结构的第一间隔物材料层。第二间隔材料层邻近并邻接栅极结构并且覆盖第一间隔物层形成。然后分别同时蚀刻第一间隔材料层和第二间隔材料层以形成第一和第二间隔物。在衬底上形成（例如，生长）外延区域，其包括与第一和第二间隔物中的每一个的界面。随后可以移除第二间隔物，并且保留在器件上的第一间隔物减小ILD间隙填充的纵横比。第一间隔物的实例组成是SiCN。

8. 发明授权

US08661635B2 Method of manufacturing a piezoelectronic device 有权
标题翻译：制造压电装置的方法
公开(公告)号：US08661635B2
公开(公告)日：2014-03-04
申请号：US13106322
申请日：2011-05-12
申请人： Wen-Kuang Hsu , Hsin-Fu Kuo , Yu-Hsien Lin , Chiung-Wen Tang , Chieh-Lien Lu , Yao-Cheng Lai
发明人： Wen-Kuang Hsu , Hsin-Fu Kuo , Yu-Hsien Lin , Chiung-Wen Tang , Chieh-Lien Lu , Yao-Cheng Lai
IPC分类号： H01L41/24
CPC分类号： H02N2/18 , H01L41/081 , H01L41/1136 , H01L41/316
摘要： A piezoelectronic device and a method of fabricating the same are provided. The piezoelectronic device has a plurality of carbon nanotubes; at least one piezoceramic layer covering the plurality of carbon nanotubes; and a supporting material for supporting the carbon nanotubes and disposed between the carbon nanotubes, the supporting layer being coated with at least one piezoceramic layer, wherein the plurality of carbon nanotubes is arranged in a comb-shape.
摘要翻译：提供了一种压电电子器件及其制造方法。该压电电子器件具有多个碳纳米管; 覆盖所述多个碳纳米管的至少一个压电陶瓷层; 以及用于支撑所述碳纳米管并且设置在所述碳纳米管之间的支撑材料，所述支撑层被涂覆有至少一个压电陶瓷层，其中所述多个碳纳米管被布置为梳状。

9. 发明授权

US08395825B2 Image scanner and method for compensating image data 失效
标题翻译：图像扫描仪和补偿图像数据的方法
公开(公告)号：US08395825B2
公开(公告)日：2013-03-12
申请号：US11246343
申请日：2005-10-07
申请人： Chih-Ping Chen , Chiung-Sheng Wang , Yu-Hsien Lin
发明人： Chih-Ping Chen , Chiung-Sheng Wang , Yu-Hsien Lin
IPC分类号： H04N1/04
CPC分类号： H04N1/00002 , H04N1/00013 , H04N1/00031 , H04N1/00045 , H04N1/0005 , H04N1/00063 , H04N1/00087 , H04N1/00928 , H04N1/0287 , H04N1/1013 , H04N1/193 , H04N2201/0081
摘要： An image scanner and a method for compensating image data are provided. By using both the X-axis calibration gain and the Y-axis calibration gain, the processing time period for compensating image data is reduced. In addition, no initial calibration and no warm-up calibration are required.
摘要翻译：提供了图像扫描器和补偿图像数据的方法。通过使用X轴校准增益和Y轴校准增益，减少用于补偿图像数据的处理时间段。此外，不需要初始校准，也不需要预热校准。

10. 发明申请

US20120289040A1 FABRICATION METHODS OF INTEGRATED SEMICONDUCTOR STRUCTURE 有权
标题翻译：综合半导体结构的制造方法
公开(公告)号：US20120289040A1
公开(公告)日：2012-11-15
申请号：US13107636
申请日：2011-05-13
申请人： Chun-Hung HUANG , Yu-Hsien LIN , Ming-Yi LIN , Jyh-Huei CHEN
发明人： Chun-Hung HUANG , Yu-Hsien LIN , Ming-Yi LIN , Jyh-Huei CHEN
IPC分类号： H01L21/28
CPC分类号： H01L29/66545 , H01L21/28185 , H01L21/28202 , H01L21/823842 , H01L21/823857 , H01L29/165 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要： An integrated circuit device and method for manufacturing an integrated circuit device is disclosed. The integrated circuit device comprises a core device and an input/output circuit. Each of the core device and input/output circuit includes a PMOS structure and an NMOS structure. Each of the PMOS includes a p-type metallic work function layer over a high-k dielectric layer, and each of the NMOS structure includes an n-type metallic work function layer over a high-k dielectric layer. There is an oxide layer under the high-k dielectric layer in the input/output circuit.
摘要翻译：公开了一种用于制造集成电路器件的集成电路器件和方法。集成电路装置包括核心装置和输入/输出电路。核心器件和输入/输出电路中的每一个包括PMOS结构和NMOS结构。每个PMOS包括在高k电介质层上的p型金属功函数层，并且每个NMOS结构包括在高k电介质层上的n型金属功函数层。在输入/输出电路中的高k电介质层下方有氧化层。

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